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1. 发明授权

US4992742A Charged-particle distribution measuring apparatus 失效
标题翻译：带电粒子分布测量装置
公开(公告)号：US4992742A
公开(公告)日：1991-02-12
申请号：US436664
申请日：1989-11-15
申请人： Soichiro Okuda , Shigeo Sasaki , Kazuo Yoshida , Yoshio Yamane , Fumiharu Yabunaka
发明人： Soichiro Okuda , Shigeo Sasaki , Kazuo Yoshida , Yoshio Yamane , Fumiharu Yabunaka
IPC分类号： G01T1/29
CPC分类号： G01T1/29
摘要： A charged-particle distribution measuring apparatus includes a particle passing member having a plurality of through-holes through which portions of a beam of charged particles can pass, a particle trapping member for trapping charged particles that have passed through the through-holes, a recoil particle trapping member disposed between the particle passing member and the particle trapping member, and a mechanism for moving the members to measure the spatial distribution of the charged particle beam. Preferably, the through-holes in the particle passing member are uniformly distributed in a checkerboard pattern. The movement of the members permits measurement of the currents produced by the charged particle beam at various intervals between the locations of the through-holes at the beginning of the measurement. The measurement of the charged particle beam intensity at positions across through the beam, rather than at fixed locations within the beam, improves the resolution of the measured distribution. The apparatus can be employed with positively and negatively charged beams and is useful in ion implantation.
摘要翻译：带电粒子分布测量装置包括具有多个通孔的粒子通过部件，带电粒子束的一部分可以通过该通孔，用于捕获穿过通孔的带电粒子的粒子俘获部件，反冲设置在颗粒通过构件和颗粒捕获构件之间的颗粒捕获构件，以及用于移动构件以测量带电粒子束的空间分布的机构。优选地，颗粒通过构件中的通孔以棋盘图案均匀分布。构件的运动允许在测量开始时在通孔的位置之间以各种间隔测量由带电粒子束产生的电流。通过光束而不是在光束内的固定位置处的位置处的带电粒子束强度的测量提高了测量分布的分辨率。该装置可以采用带正电荷和带负电荷的束，并且可用于离子注入。

2. 发明授权

US5025167A Ion implantation apparatus 失效
标题翻译：离子注入装置
公开(公告)号：US5025167A
公开(公告)日：1991-06-18
申请号：US533769
申请日：1990-06-06
申请人： Soichiro Okuda , Tetsuya Nakanishi , Shigeo Sasaki , Kazuhiko Noguchi
发明人： Soichiro Okuda , Tetsuya Nakanishi , Shigeo Sasaki , Kazuhiko Noguchi
IPC分类号： H01J37/09 , H01J37/304 , H01J37/317
CPC分类号： H01J37/09 , H01J37/304 , H01J37/3171
摘要： An ion implantation apparatus comprises an ion beam measuring device to measure and analyze the shape of a beam projected on a substrate for ion implantation and the quantity of current obtained by the ion beam, an analyzing slit member having an opening whose width is changeable, which is located in the ion beam track to extract only implantation ions, and a shaping slit member having an opening whose width is changeable, which is located behind the analyzing slit member to determine the shape of the beam to be projected on the substrate for ion implantation, wherein the widths of the openings of the analyzing slit member and the shaping slit member are changed on the basis of the shape of the beam and the quantity of current obtained as a result of the measurement by the ion beam measuring device.
摘要翻译：离子注入装置包括离子束测量装置，用于测量和分析投影在用于离子注入的基板上的光束的形状和由离子束获得的电流量，分析狭缝部件，其具有宽度可变的开口，位于离子束轨道中以仅提取注入离子;以及成形狭缝构件，其具有位于分析狭缝构件后面的宽度可变的开口，以确定要投影到用于离子注入的衬底上的光束的形状其中分析狭缝部件和成形狭缝部件的开口的宽度基于由离子束测量装置测量的结果获得的光束形状和电流量而改变。

3. 发明授权

US5976260A Semiconductor producing apparatus, and wafer vacuum chucking device, gas cleaning method and nitride film forming method in semiconductor producing apparatus 失效
标题翻译：半导体制造装置，晶片真空夹紧装置，半导体制造装置中的气体净化方法和氮化物膜形成方法
公开(公告)号：US5976260A
公开(公告)日：1999-11-02
申请号：US612445
申请日：1996-03-07
申请人： Yoshimi Kinoshita , Tomoyuki Kanda , Katsuhisa Kitano , Kazuo Yoshida , Hiroshi Ohnishi , Kenichiro Yamanishi , Shigeo Sasaki , Hideki Komori , Taizo Eshima , Kouichirou Tsutahara , Toshihiko Noguchi , Toru Takahama , Yoshihiko Kusakabe , Takeshi Iwamoto , Nobuyuki Kosaka
发明人： Yoshimi Kinoshita , Tomoyuki Kanda , Katsuhisa Kitano , Kazuo Yoshida , Hiroshi Ohnishi , Kenichiro Yamanishi , Shigeo Sasaki , Hideki Komori , Taizo Eshima , Kouichirou Tsutahara , Toshihiko Noguchi , Toru Takahama , Yoshihiko Kusakabe , Takeshi Iwamoto , Nobuyuki Kosaka
IPC分类号： B23Q3/08 , B25B11/00 , C23C16/34 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/48 , H01L21/683 , C23C16/00
CPC分类号： C23C16/34 , B25B11/005 , C23C16/4405 , C23C16/455 , C23C16/4583 , C23C16/481 , H01L21/6838 , Y10T279/11
摘要： It is an object of the present invention to obtain a vacuum chucking which can vacuum suck a wafer even if dusts attach thereon. The main body of vacuum chuck (101) has a plurality of block grooves (125) on the surface on which the wafer (1) is sucked and fixed, in which vacuum evacuation paths (105) each for vacuum evacuating each block groove (125) are provided for each block groove (125). When the wafer (1) is sucked and fixed under low pressure, even if the degree of vacuum in one of the block grooves (125) decreases due to attachment of dusts on part of the suction surface, or the like, the wafer (1) can surely be sucked and held.
摘要翻译：本发明的目的是获得即使在其上附着有灰尘也能真空吸附晶片的真空吸盘。真空吸盘（101）的主体在其上吸引和固定晶片（1）的表面上具有多个块状凹槽（125），其中各真空抽空路径（105）用于真空抽吸每个块状凹槽（125））被设置用于每个块槽（125）。当晶片（1）在低压下被吸入和固定时，即使一个块状槽（125）中的一个真空度由于吸附表面的一部分上的灰尘等的附着而降低，晶片（1））肯定被吸住了。

4. 发明授权

US5534073A Semiconductor producing apparatus comprising wafer vacuum chucking device 失效
标题翻译：半导体制造装置，包括晶片真空吸附装置
公开(公告)号：US5534073A
公开(公告)日：1996-07-09
申请号：US116968
申请日：1993-09-07
申请人： Yoshimi Kinoshita , Tomoyuki Kanda , Katsuhisa Kitano , Kazuo Yoshida , Hiroshi Ohnishi , Kenichiro Yamanishi , Shigeo Sasaki , Hideki Komori , Taizo Eshima , Kouichirou Tsutahara , Toshihiko Noguchi , Toru Takahama , Yoshihiko Kusakabe , Takeshi Iwamoto , Nobuyuki Kosaka
发明人： Yoshimi Kinoshita , Tomoyuki Kanda , Katsuhisa Kitano , Kazuo Yoshida , Hiroshi Ohnishi , Kenichiro Yamanishi , Shigeo Sasaki , Hideki Komori , Taizo Eshima , Kouichirou Tsutahara , Toshihiko Noguchi , Toru Takahama , Yoshihiko Kusakabe , Takeshi Iwamoto , Nobuyuki Kosaka
IPC分类号： B23Q3/08 , B25B11/00 , C23C16/34 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/48 , H01L21/683 , C23C16/00 , B23B5/22 , B23B31/30
CPC分类号： C23C16/34 , B25B11/005 , C23C16/4405 , C23C16/455 , C23C16/4583 , C23C16/481 , H01L21/6838 , Y10T279/11
摘要： It is an object of the present invention to obtain a vacuum chucking which can vacuum suck a wafer even if dusts attach thereon. The main body of vacuum chuck (101) has a plurality of block grooves (125) on the surface on which the wafer (1) is sucked and fixed, in which vacuum evacuation paths (105) each for vacuum evacuating each block groove (125) are provided for each block groove (125). When the wafer(1) is sucked and fixed under low pressure, even if the degree of vacuum in one of the block grooves (125) decreases due to attachment of dusts on part of the suction surface, or the like, the wafer (1) can surely be sucked and held.
摘要翻译：本发明的目的是获得即使在其上附着有灰尘也能真空吸附晶片的真空吸盘。真空吸盘（101）的主体在其上吸引和固定晶片（1）的表面上具有多个块状凹槽（125），其中各真空抽空路径（105）用于真空抽吸每个块状凹槽（125））被设置用于每个块槽（125）。当晶片（1）在低压下被吸入和固定时，即使一个块状槽（125）中的一个真空度由于吸附表面的一部分上的灰尘等的附着而降低，晶片（1））肯定被吸住了。

5. 发明授权

US5952316A 2-amino-1,3-propanediol compound and immunosuppressant 失效
标题翻译： 2-氨基-1,3-丙二醇化合物和免疫抑制剂
公开(公告)号：US5952316A
公开(公告)日：1999-09-14
申请号：US911602
申请日：1997-08-14
申请人： Tetsuro Fujita , Shigeo Sasaki , Masahiko Yoneta , Tadashi Mishina , Kunitomo Adachi , Kenji Chiba
发明人： Tetsuro Fujita , Shigeo Sasaki , Masahiko Yoneta , Tadashi Mishina , Kunitomo Adachi , Kenji Chiba
IPC分类号： A01N33/02 , A01N43/40 , A01N43/60 , A01N57/00 , C07C215/10 , C07C215/18 , C07C215/20 , C07C215/24 , C07C215/26 , C07C215/28 , C07C215/34 , C07C215/42 , C07C215/54 , C07C215/56 , C07C215/68 , C07C217/28 , C07C217/30 , C07C217/34 , C07C217/48 , C07C217/52 , C07C217/64 , C07C217/72 , C07C217/76 , C07C219/06 , C07C219/24 , C07C219/30 , C07C225/04 , C07C225/06 , C07C225/10 , C07C225/14 , C07C225/16 , C07C229/22 , C07C229/38 , C07C229/46 , C07C233/18 , C07C233/31 , C07C233/35 , C07C233/36 , C07C233/41 , C07C233/43 , C07C233/47 , C07C237/06 , C07C237/24 , C07C237/30 , C07C251/38 , C07C271/20 , C07C271/24 , C07C271/28 , C07C323/25 , C07C323/30 , C07C323/32 , C07C323/34 , C07C323/41 , C07D207/06 , C07D207/09 , C07D207/32 , C07D207/325 , C07D207/335 , C07D211/14 , C07D211/26 , C07D213/38 , C07D213/40 , C07D233/54 , C07D237/08 , C07D239/26 , C07D241/12 , C07D261/08 , C07D263/32 , C07D265/30 , C07D275/02 , C07D277/28 , C07D279/12 , C07D295/13 , C07D295/135 , C07D307/52 , C07D309/32 , C07D317/28 , C07D333/20 , C07D521/00 , C07P211/00 , C07P401/00
CPC分类号： C07D207/325 , C07C215/10 , C07C215/18 , C07C215/20 , C07C215/24 , C07C215/26 , C07C215/28 , C07C215/34 , C07C215/42 , C07C215/54 , C07C215/56 , C07C215/68 , C07C217/28 , C07C217/30 , C07C217/34 , C07C217/48 , C07C217/52 , C07C217/64 , C07C217/72 , C07C217/76 , C07C219/06 , C07C219/24 , C07C219/30 , C07C225/04 , C07C225/06 , C07C225/10 , C07C225/14 , C07C225/16 , C07C229/22 , C07C229/38 , C07C229/46 , C07C233/18 , C07C233/31 , C07C233/35 , C07C233/36 , C07C233/41 , C07C233/43 , C07C233/47 , C07C237/06 , C07C237/24 , C07C237/30 , C07C251/38 , C07C271/20 , C07C271/24 , C07C271/28 , C07C323/25 , C07C323/30 , C07C323/32 , C07C323/34 , C07C323/41 , C07D207/06 , C07D207/09 , C07D207/335 , C07D211/14 , C07D211/26 , C07D213/38 , C07D213/40 , C07D231/12 , C07D233/56 , C07D233/64 , C07D237/08 , C07D239/26 , C07D241/12 , C07D249/08 , C07D261/08 , C07D263/32 , C07D265/30 , C07D275/02 , C07D277/28 , C07D279/12 , C07D295/13 , C07D295/135 , C07D307/52 , C07D309/32 , C07D317/28 , C07D333/20 , C07C2101/08 , C07C2101/14
摘要： 2-Amino-1,3-propanediol compounds of the formula (I) ##STR1## wherein R is an optionally substituted straight- or branched carbon chain, an optionally substituted aryl, an optionally substituted cycloalkyl or the like, and R.sup.2, R.sup.3, R.sup.4 and R.sup.5 are the same or different and each is a hydrogen, an alkyl, an aralkyl, an acyl or an alkoxycarbonyl, pharmaceutically acceptable salts thereof and immunosuppressants comprising these compounds as active ingredients.The 2-amino-1,3-propanediol compounds of the present invention show immunosuppressive action and are useful for suppressing rejection in organ or bone marrow tranplantation, prevention and treatment of autoimmune diseases or as reagents for use in medicinal and pharmaceutical fields.
摘要翻译：式（I）的2-氨基-1,3-丙二醇化合物，其中R是任选取代的直链或支链碳链，任选取代的芳基，任选取代的环烷基等，以及R 2，R 3，R 4和R 5 各自为氢，烷基，芳烷基，酰基或烷氧基羰基，其药学上可接受的盐和包含这些化合物作为活性成分的免疫抑制剂。本发明的2-氨基-1,3-丙二醇化合物显示免疫抑制作用，可用于抑制器官或骨髓移植中的排斥反应，预防和治疗自身免疫性疾病或用作药物和药物领域的试剂。

6. 发明授权

US5403989A Method and apparatus for removing foreign matters from a cathode-ray tube 失效
标题翻译：从阴极射线管除去异物的方法和装置
公开(公告)号：US5403989A
公开(公告)日：1995-04-04
申请号：US36399
申请日：1993-03-24
申请人： Hiroaki Tobuse , Tomoyuki Kanda , Yasusi Hisaoka , Shigeo Sasaki , Minoru Kobayashi , Takuji Oda , Ryuji Ueda , Akio Yoshida , Tadayoshi Owaki , Akihiko Yamasaki , Masaaki Kinoshita , Toshiaki Fukunishi
发明人： Hiroaki Tobuse , Tomoyuki Kanda , Yasusi Hisaoka , Shigeo Sasaki , Minoru Kobayashi , Takuji Oda , Ryuji Ueda , Akio Yoshida , Tadayoshi Owaki , Akihiko Yamasaki , Masaaki Kinoshita , Toshiaki Fukunishi
IPC分类号： H01J9/50 , H04N3/30 , B23K15/00
CPC分类号： H04N3/30 , H01J9/50 , H01J2209/3893 , Y02W30/828
摘要： In a color cathode-ray tube, only a foreign matter adhering to a shadow mask is removed effectively without thermal deformation of the shadow mask or thermal denaturation of phosphors.An electron beam produced by an electron gun incorporated in a cathode-ray tube itself is scanned or irradiated to all over a shadow mask of the color cathode-ray tube. The radiant state of a fluorescent screen at this stage is checked to detect a foreign matter adhering to the shadow mask. The electron beam is deflected to align with the position at which the foreign matter is detected, and then irradiated to the foreign matter in the form of pulses. Thus, the foreign matter is heated and removed.
摘要翻译：在彩色阴极射线管中，只有在荫罩的热变形或荧光体的热变性的情况下才能有效地去除附着在荫罩上的异物。通过并入阴极射线管本身的电子枪产生的电子束被扫描或照射到彩色阴极射线管的阴影掩模上。检查在该阶段的荧光屏的辐射状态以检测附着在荫罩上的异物。电子束被偏转以与检测异物的位置对准，然后以脉冲的形式照射到异物。因此，异物被加热和去除。

7. 发明授权

US06555418B2 Method for separating a semiconductor element in a semiconductor element pushing-up device 有权
标题翻译：用于分离半导体元件上推装置中的半导体元件的方法
公开(公告)号：US06555418B2
公开(公告)日：2003-04-29
申请号：US09735617
申请日：2000-12-14
申请人： Tetsuya Kurosawa , Shigeo Sasaki
发明人： Tetsuya Kurosawa , Shigeo Sasaki
IPC分类号： H01L2148
CPC分类号： H01L21/67144 , H01L2221/68322 , H01L2924/0002 , Y10S156/943 , Y10T156/1983 , H01L2924/00
摘要： A push-up pin used for separating a semiconductor element attached by adhesive to an adhesive sheet of a semiconductor element pushing-up device in a die bonding apparatus from the adhesive sheet by pushing up the semiconductor element from the rear surface side of the adhesive sheet includes a tip end portion having a shape for applying pushing-up pressure with the thicknesses of the adhesive sheet and the adhesive kept constant when the pushing-up pressure for pushing up the semiconductor element from the rear surface side of the adhesive sheet is applied, and a base portion for supporting the tip end portion.
摘要翻译：一种用于将由粘合剂附着的半导体元件与芯片接合装置中的半导体元件上推装置的粘合片从粘合片分离的上推销，其中该半导体元件从粘合片的后表面侧向上推包括当施加用于从粘合片的后表面侧推上半导体元件的上推压力时，具有用于施加上推压力的形状的末端部分，其中粘合片和粘合剂的厚度保持恒定，以及用于支撑前端部的基部。

8. 发明授权

US06201306B1 Push-up pin of a semiconductor element pushing-up device, and a method for separating 失效
标题翻译：半导体元件上推装置的上推销以及分离方法
公开(公告)号：US06201306B1
公开(公告)日：2001-03-13
申请号：US08760117
申请日：1996-12-03
申请人： Tetsuya Kurosawa , Shigeo Sasaki
发明人： Tetsuya Kurosawa , Shigeo Sasaki
IPC分类号： H01L2348
CPC分类号： H01L21/67144 , H01L2221/68322 , H01L2924/0002 , Y10S156/943 , Y10T156/1983 , H01L2924/00
摘要： A push-up pin used for separating a semiconductor element attached by adhesive to an adhesive sheet of a semiconductor element pushing-up device in a die bonding apparatus from the adhesive sheet by pushing up the semiconductor element from the rear surface side of the adhesive sheet includes a tip end portion having a shape for applying pushing-up pressure with the thicknesses of the adhesive sheet and the adhesive kept constant when the pushing-up pressure for pushing up the semiconductor element from the rear surface side of the adhesive sheet is applied, and a base portion for supporting the tip end portion.
摘要翻译：一种用于将由粘合剂附着的半导体元件与芯片接合装置中的半导体元件上推装置的粘合片从粘合片分离的上推销，其中该半导体元件从粘合片的后表面侧向上推包括当施加用于从粘合片的后表面侧推上半导体元件的上推压力时，具有用于施加上推压力的形状的末端部分，其中粘合片和粘合剂的厚度保持恒定，以及用于支撑前端部的基部。

9. 发明授权

US5888883A Method of dividing a wafer and method of manufacturing a semiconductor device 失效
标题翻译：分割晶片的方法和制造半导体器件的方法
公开(公告)号：US5888883A
公开(公告)日：1999-03-30
申请号：US65626
申请日：1998-04-24
申请人： Shigeo Sasaki , Shinya Takyu , Keisuke Tokubuchi , Koichi Yazima
发明人： Shigeo Sasaki , Shinya Takyu , Keisuke Tokubuchi , Koichi Yazima
IPC分类号： H01L21/301 , H01L21/304 , H01L21/68 , H01L21/78
CPC分类号： H01L21/6835 , H01L21/3043 , H01L21/6836 , H01L21/78 , H01L2221/68327 , H01L2221/6834 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/73215 , H01L2224/73265 , H01L24/73 , H01L2924/01079 , H01L2924/0132 , H01L2924/01322 , H01L2924/181 , H01L2924/19041
摘要： Grooves are formed in a surface of a wafer, on which surface semiconductor elements are formed, along dicing lines. The grooves are deeper than a thickness of a finished chip. A holding member is attached on the surface of the wafer on which the semiconductor elements are formed. A bottom surface of the wafer is lapped and polished to the thickness of the finished chip, thereby dividing the wafer into chips. When the wafer is divided into the chips, the lapping and polishing is continued until the thickness of the wafer becomes equal to the thickness of the finished chip, even after the wafer has been divided into the chips by the lapping and polishing.
摘要翻译：沟槽沿着切割线形成在其上形成有表面半导体元件的晶片的表面中。凹槽比成品芯片的厚度更深。保持构件安装在其上形成有半导体元件的晶片的表面上。将晶片的底表面研磨并抛光至成品芯片的厚度，从而将晶片分成芯片。当晶片被分成芯片时，即使在通过研磨和抛光将晶片分割成芯片之后，研磨和抛光仍然持续到晶片的厚度等于成品芯片的厚度。

10. 发明授权

US5132545A Ion implantation apparatus 失效
标题翻译：离子植入装置
公开(公告)号：US5132545A
公开(公告)日：1992-07-21
申请号：US568191
申请日：1990-08-16
申请人： Kazuhiro Shono , Shigeo Sasaki , Susumu Katoh , Masao Naitou , Tetsuya Nakanishi , Naomitsu Fujishita , Kazuhiko Noguchi , Masayasu Tanjo
发明人： Kazuhiro Shono , Shigeo Sasaki , Susumu Katoh , Masao Naitou , Tetsuya Nakanishi , Naomitsu Fujishita , Kazuhiko Noguchi , Masayasu Tanjo
IPC分类号： H01J37/302 , H01J37/317
CPC分类号： H01J37/302 , H01J37/3171 , H01J2237/24542
摘要： An ion implantation apparatus includes an ion source having an arc chamber generating ions and a drawing electrode drawing ions from the arc chamber, a mass separator transporting only ions desired for implantation, an ion implantation chamber in which the material to be implanted by ions is placed, and a controller means for automatically controlling the distance between the arc chamber and the drawing electrode incrementally in accordance with a theoretical calculation using normalized perveance considering the kind of ions to be implanted, the accelerating voltage, and the ion current and current density distribution.

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