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1. 发明授权

US06110647A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06110647A
公开(公告)日：2000-08-29
申请号：US024225
申请日：1998-02-17
申请人： Soichi Inoue , Hisashi Kaneko , Masahiko Hasunuma , Takamasa Usui , Masami Aoki , Kazuko Yamamoto , Sachiko Kobayashi
发明人： Soichi Inoue , Hisashi Kaneko , Masahiko Hasunuma , Takamasa Usui , Masami Aoki , Kazuko Yamamoto , Sachiko Kobayashi
IPC分类号： G03F9/00 , G03F1/36 , G03F1/68 , G03F7/00 , G03F7/20 , H01L21/027 , H01L21/768 , H01L21/82 , H01L21/822 , H01L27/04
CPC分类号： G03F7/70425 , G03F1/36 , G03F7/0035
摘要： A method of manufacturing a semiconductor device, comprises the steps of forming a first transfer pattern corresponding to a mask pattern on a major surface side of a semiconductor substrate through a first mask plate on which the first mask pattern having a straight portion and a bent portion is formed, and forming a second transfer pattern corresponding to a second mask pattern on a major surface side of the semiconductor substrate through a second mask plate on which the second mask pattern having a pattern arranged at a position corresponding to the straight portion is formed.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：通过第一掩模板在半导体衬底的主表面侧上形成与掩模图案对应的第一转印图案，其中第一掩模图案具有直的部分和弯曲部分并且通过第二掩模板在半导体衬底的主表面侧上形成与第二掩模图案相对应的第二传输图案，在第二掩模板上形成布置在对应于直线部分的位置处的图案的第二掩模图案。

2. 发明授权

US6060368A Mask pattern correction method 失效
标题翻译：掩模图案校正方法和系统
公开(公告)号：US6060368A
公开(公告)日：2000-05-09
申请号：US206364
申请日：1998-12-07
申请人： Koji Hashimoto , Hisako Aoyama , Soichi Inoue , Kazuko Yamamoto , Sachiko Kobayashi
发明人： Koji Hashimoto , Hisako Aoyama , Soichi Inoue , Kazuko Yamamoto , Sachiko Kobayashi
IPC分类号： G03F1/36 , G03F1/72 , G03F7/20 , H01L21/027 , H01L21/76
CPC分类号： G03F7/70441 , G03F1/36
摘要： This invention is provided to eliminate the optical proximity effect which will occur because of different rates of dimensional change between before and after etching when a plurality of gate materials are etched in a single device. After a to-be-corrected region is extracted, an n.sup.+ -type polysilicon gate layer is extracted. Then, the distance is calculated from the n.sup.+ -type polysilicon gate layer to a pattern adjacent thereto which can be a p.sup.+ -type polysilicon gate layer, thereby correcting the size of the n.sup.+ -type polysilicon gate layer with reference to a correction table for the pattern adjacent to the n.sup.+ -type polysilicon gate layer. After that, a p.sup.+ -type polysilicon gate layer is extracted. Then, the distance is calculated from the p.sup.+ -type polysilicon gate layer to a pattern adjacent thereto which can be an n.sup.+ -type polysilicon gate layer, thereby correcting the size of the p.sup.+ -type polysilicon gate layer with reference to a correction table for the pattern adjacent to the p.sup.+ -type polysilicon gate layer.
摘要翻译：提供本发明以消除当在单个器件中蚀刻多个栅极材料时在蚀刻之前和之后不同的尺寸变化率而将发生的光学邻近效应。在提取待校正区域之后，提取n +型多晶硅栅极层。然后，从n +型多晶硅栅极层到可以是p +型多晶硅栅极层的与其相邻的图案计算距离，从而参照n +型多晶硅栅极层的校正表来校正n +型多晶硅栅极层的尺寸图案与n +型多晶硅栅极层相邻。之后，提取p +型多晶硅栅极层。然后，从p +型多晶硅栅极层到与其相邻的图案，其可以是n +型多晶硅栅极层，从而根据用于的p +型多晶硅栅极层的校正表来校正p +型多晶硅栅极层的尺寸，图案与p +型多晶硅栅极层相邻。

3. 发明授权

US6004701A Method for designing Levenson photomask 失效
标题翻译：设计Levenson光掩模的方法
公开(公告)号：US6004701A
公开(公告)日：1999-12-21
申请号：US46794
申请日：1998-03-24
申请人： Taiga Uno , Kiyomi Koyama , Kazuko Yamamoto , Satoshi Tanaka , Sachiko Kobayashi , Koji Hashimoto
发明人： Taiga Uno , Kiyomi Koyama , Kazuko Yamamoto , Satoshi Tanaka , Sachiko Kobayashi , Koji Hashimoto
IPC分类号： G03F1/30 , G03F1/68 , H01L21/027 , G03F9/00 , G06F17/50
CPC分类号： G03F1/30
摘要： In a Levenson photomask design method of partially forming a plurality of opening patterns for passing incident light in a light-shielding film for shielding the incident light, and arranging, on some patterns, phase shifters, line segment pairs of different patterns which are adjacent to each other within a predetermined distance R are extracted in units of line segments obtained by dividing the patterns. A pattern within a predetermined distance S from the central point of the opposite region of a line segment pair of interest in a direction perpendicular to the line segments is obtained. The obtained pattern is subjected to a process simulation to obtain resolution easiness representing the easiness in resolving the adjacent patterns. On the basis of the resolution easiness obtained for the adjacent pattern pair within the distance R, a phase shifter is arranged in ascending order of resolution easiness to give a phase difference. Resolution suitable for the exposure condition used can be obtained by a simple method. When the shifter arrangement is determined in consideration of the resolution easiness, a high-resolution shifter arrangement can be realized for a Levenson phase shift mask.
摘要翻译：在莱文森光掩模设计方法中，部分地形成用于使入射光入射到遮光膜中的入射光的多个开口图案，用于屏蔽入射光，并且在某些图案上布置移相器，与不同图案相邻的线段对以规定的距离R为单位，以通过划分图案而得到的线段为单位提取。获得与垂直于线段的方向相关的线段对的相对区域的中心点的预定距离S内的图案。对所获得的图案进行处理模拟以获得表示分辨相邻图案的容易性的分辨率容易度。基于在距离R内对相邻图案对获得的分辨率容易度，移位器按分辨率的顺序排列顺序排列以给出相位差。可以通过简单的方法获得适合于所使用的曝光条件的分辨率。考虑到分辨率容易度来确定移位器装置时，可以实现对莱文森相移掩模的高分辨率移位器装置。

4. 发明授权

US06622297B2 Pattern correcting method and pattern verifying method 有权
公开(公告)号：US06622297B2
公开(公告)日：2003-09-16
申请号：US09956987
申请日：2001-09-21
申请人： Taiga Uno , Kazuko Yamamoto , Sachiko Kobayashi , Satoshi Tanaka
发明人： Taiga Uno , Kazuko Yamamoto , Sachiko Kobayashi , Satoshi Tanaka
IPC分类号： G06F1750
CPC分类号： G03F1/36
摘要： A pattern of exposure mask-use design data having a hierarchical structure is corrected in order to finish with fidelity a transfer pattern to be formed on a wafer, in which if the exposure apparatus has a light source shape that does not have rotation symmetry at any given angle around an optical axis, as the center, of an illumination optics or a projection optics, a cell A rotated in arrangement in input data having a hierarchical structure is replaced with a cell A′ not employing rotation and then optical proximity correction is effected.

5. 发明授权

US06243855B1 Mask data design method 有权
标题翻译：进行自动校正处理
公开(公告)号：US06243855B1
公开(公告)日：2001-06-05
申请号：US09161959
申请日：1998-09-29
申请人： Sachiko Kobayashi , Taiga Uno , Kazuko Yamamoto , Koji Hashimoto
发明人： Sachiko Kobayashi , Taiga Uno , Kazuko Yamamoto , Koji Hashimoto
IPC分类号： G06F760
CPC分类号： G03F7/70441 , G03F1/36
摘要： A correction target segment extracted from the design pattern is divided into lengths suited for correction. If the arrangement of the divided segments is a one-dimensional pattern, a correction value is obtained by conducting a one-dimensional process simulation to an arrangement within a predetermined distance from a divided segment in perpendicular direction. If the arrangement of the divided segments is a two-dimensional pattern, a correction value is obtained by two-dimensionally extracting a pattern included in a rectangular region having a predetermined distance from one point on the divided segment in perpendicular and horizontal directions and by conducting a two-dimensional process simulation to the extracted pattern.
摘要翻译：从设计图案提取的校正目标片段被划分为适合于校正的长度。如果分割段的排列是一维图案，则通过对垂直方向上的分割段的预定距离内的排列进行一维处理模拟来获得校正值。如果分割的片段的排列是二维图案，则通过二维地提取包括在具有预定距离的矩形区域中的图案，从而在垂直和水平方向上分割片段上的一个点，并且通过导线对提取的图案进行二维过程模拟。

6. 发明授权

US06964031B2 Mask pattern generating method and manufacturing method of semiconductor apparatus 失效
标题翻译：半导体装置的掩模图案生成方法和制造方法
公开(公告)号：US06964031B2
公开(公告)日：2005-11-08
申请号：US10255832
申请日：2002-09-27
申请人： Toshiya Kotani , Satoshi Tanaka , Soichi Inoue , Sachiko Kobayashi , Hirotaka Ichiakwa
发明人： Toshiya Kotani , Satoshi Tanaka , Soichi Inoue , Sachiko Kobayashi , Hirotaka Ichiakwa
IPC分类号： H01L21/027 , G03F1/00 , G03F1/36 , G06F17/50 , H01L21/00
CPC分类号： G03F1/36
摘要： A mask pattern generation method of generating a mask pattern from a designed pattern, comprising preparing the designed pattern, preparing a correction parameter, preparing a first correction library in which a plurality of pairs of an edge coordinate group and a correction value group to correct the edge coordinate group is registered, acquiring edge coordinate groups of the designed patterns, generating a second correction library in which only the plurality of pairs of an edge coordinate group agreeing with the acquired edge coordinate group and the correction value group is registered in the first correction library and simulation using the correction parameter, and correcting the designed pattern using the second correction library.
摘要翻译：一种从设计图案生成掩模图案的掩模图案生成方法，包括准备设计图案，准备校正参数，准备第一校正库，其中多对边缘坐标组和校正值组校正第登记边缘坐标组，获取所设计图案的边缘坐标组，生成第二校正库，其中在所述第一校正中仅登记与获取的边缘坐标组和校正值组一致的边缘坐标组的多对对库和模拟，并使用第二校正库校正设计的模式。

7. 发明授权

US08551991B2 1,2,3,4-tetrahydroquinoxaline derivative having glucocorticoid receptor binding activity 有权
标题翻译：具有糖皮质激素受体结合活性的1,2,3,4-四氢喹喔啉衍生物
公开(公告)号：US08551991B2
公开(公告)日：2013-10-08
申请号：US12225010
申请日：2007-03-14
申请人： Mamoru Matsuda , Toshiyuki Mori , Kenji Kawashima , Minoru Yamamoto , Masatomo Kato , Miwa Takai , Masato Nagatsuka , Sachiko Kobayashi
发明人： Mamoru Matsuda , Toshiyuki Mori , Kenji Kawashima , Minoru Yamamoto , Masatomo Kato , Miwa Takai , Masato Nagatsuka , Sachiko Kobayashi
IPC分类号： A61K31/535 , A61K31/44 , A01N43/40
CPC分类号： C07D241/46 , C07D241/44 , C07D401/12 , C07D401/14 , C07D405/12 , C07D409/12 , C07D409/14 , C07D413/12 , C07D417/12 , C07D417/14
摘要： An object of the present invention is to synthesize a novel 1,2,3,4-tetrahydroquinoxaline derivative represented by formula (1) and to find a pharmacological action of the derivative. In the formula, the R1 represents a halogen, an alkyl, cycloalkyl, aryl or heterocyclic group, or the like; p represents 0 to 5; R2 represents a halogen, an alkyl, hydroxyl or alkoxy group, or the like; q represents 0 to 2; R3 represents hydrogen, an alkyl, alkenyl, alkylcarbonyl or arylcarbonyl group, or the like; R4 and R5 independently represent hydrogen, a halogen, an alkyl, alkenyl, alkynyl, cycloalkyl, aryl or heterocyclic group, or the like; R6 represents hydrogen, an alkyl, alkenyl, alkynyl, cycloalkyl, aryl or heterocyclic group, or the like; A represents an alkylene; R7 represents OR8, NR8R9, SR8, S(O)R8, S(O)2R8; and X represents O or S.
摘要翻译：本发明的目的是合成由式（1）表示的新型1,2,3,4-四氢喹喔啉衍生物，并找到该衍生物的药理学作用。在该式中，R 1表示卤素，烷基，环烷基，芳基或杂环基等; p表示0〜5; R2表示卤素，烷基，羟基或烷氧基等; q表示0〜2; R3表示氢，烷基，烯基，烷基羰基或芳基羰基等; R4和R5独立地表示氢，卤素，烷基，烯基，炔基，环烷基，芳基或杂环基等; R6表示氢，烷基，烯基，炔基，环烷基，芳基或杂环基等; A表示亚烷基; R 7表示OR 8，NR 8 R 9，SR 8，S（O）R 8，S（O）而X代表O或S.

8. 发明授权

US08008496B2 1,2-dihydroquinoline derivative having substituted phenylchalcogeno lower alkyl group and ester-introduced phenyl group as substituents 有权
标题翻译：具有取代的苯基硫代低级烷基和酯引入的苯基作为取代基的1,2-二氢喹啉衍生物
公开(公告)号：US08008496B2
公开(公告)日：2011-08-30
申请号：US12312392
申请日：2007-11-14
申请人： Mamoru Matsuda , Masato Nagatsuka , Toshiyuki Mori , Sachiko Kobayashi , Masatomo Kato , Miwa Takai
发明人： Mamoru Matsuda , Masato Nagatsuka , Toshiyuki Mori , Sachiko Kobayashi , Masatomo Kato , Miwa Takai
IPC分类号： C07D215/38
CPC分类号： C07D401/12 , C07D215/14 , C07D405/12 , C07D409/12 , C07D409/14 , C07D417/12
摘要： The compounds represented in general formula (1) and a salt thereof are useful for glucocorticoid receptor modulator. The R1 represents a hydrogen atom or a lower alkyl group; R2 represents a hydrogen atom or a lower alkyl group; R3 and R4 may be the same or different and represent a hydrogen atom or a lower alkyl group; R5 represents a hydrogen atom or a lower alkyl group; R6 represents a halogen atom, a lower alkyl group, a hydroxy group, a lower alkoxy group or a nitro group; X represents —C(O)—, —C(O)NR8—, —S(O)2— and the like; R7 and/or R8 may be the same or different and represent a hydrogen atom, a lower alkyl group which may have a substituent, an aryl group which may have a substituent, a heterocyclic group which may have a substituent, a lower alkoxy group which may have a substituent and the like; Y represents a lower alkylene group; Z represents a chalcogen atom; and P represents 0, 1, 2 or 3.
摘要翻译：通式（1）表示的化合物及其盐可用于糖皮质激素受体调节剂。 R1表示氢原子或低级烷基; R2表示氢原子或低级烷基; R 3和R 4可以相同或不同，表示氢原子或低级烷基; R5表示氢原子或低级烷基; R6表示卤素原子，低级烷基，羟基，低级烷氧基或硝基; X表示-C（O） - ， - C（O）NR 8 - ， - S（O）2等） R 7和/或R 8可以相同或不同，表示氢原子，可以具有取代基的低级烷基，可以具有取代基的芳基，可以具有取代基的杂环基，低级烷氧基可以具有取代基等; Y表示低级亚烷基; Z表示硫属原子; P表示0,1,2或3。

9. 发明申请

US20100056504A1 NOVEL 1,2-DIHYDROQUINOLINE DERIVATIVE HAVING SUBSTITUTED PHENYLCHALCOGENO LOWER ALKYL GROUP AND ESTER- INTRODUCED PHENYL GROUP AS SUBSTITUENTS 有权
标题翻译：具有取代的苯乙烯基低级烷基的新的1,2-二氢喹啉衍生物和引入的苯基作为取代基
公开(公告)号：US20100056504A1
公开(公告)日：2010-03-04
申请号：US12312392
申请日：2007-11-14
申请人： Mamoru Matsuda , Masato Nagatsuka , Toshiyuki Mori , Sachiko Kobayashi , Masatomo Kato , Miwa Takai
发明人： Mamoru Matsuda , Masato Nagatsuka , Toshiyuki Mori , Sachiko Kobayashi , Masatomo Kato , Miwa Takai
IPC分类号： A61K31/541 , C07D279/06 , C07D413/12 , C07D215/38 , A61K31/47 , A61K31/5377 , A61P25/00
CPC分类号： C07D401/12 , C07D215/14 , C07D405/12 , C07D409/12 , C07D409/14 , C07D417/12
摘要： The compounds represented in general formula (1) and a salt thereof are useful for glucocorticoid receptor modulator. The R1 represents a hydrogen atom or a lower alkyl group; R2 represents a hydrogen atom or a lower alkyl group; R3 and R4 may be the same or different and represent a hydrogen atom or a lower alkyl group; R5 represents a hydrogen atom or a lower alkyl group; R6 represents a halogen atom, a lower alkyl group, a hydroxy group, a lower alkoxy group or a nitro group; X represents —C(O)—, —C(O)NR8—, —S(O)2— and the like; R7 and/or R8 may be the same or different and represent a hydrogen atom, a lower alkyl group which may have a substituent, an aryl group which may have a substituent, a heterocyclic group which may have a substituent, a lower alkoxy group which may have a substituent and the like; Y represents a lower alkylene group; Z represents a chalcogen atom; and P represents 0, 1, 2 or 3.
摘要翻译：通式（1）表示的化合物及其盐可用于糖皮质激素受体调节剂。 R1表示氢原子或低级烷基; R2表示氢原子或低级烷基; R 3和R 4可以相同或不同，表示氢原子或低级烷基; R5表示氢原子或低级烷基; R6表示卤素原子，低级烷基，羟基，低级烷氧基或硝基; X表示-C（O） - ， - C（O）NR 8 - ， - S（O）2等） R 7和/或R 8可以相同或不同，表示氢原子，可以具有取代基的低级烷基，可以具有取代基的芳基，可以具有取代基的杂环基，低级烷氧基可以具有取代基等; Y表示低级亚烷基; Z表示硫属原子; P表示0,1,2或3。

10. 发明申请

US20070124718A1 Mask manufacturing system, mask data creating method and manufacturing method of semiconductor device 失效
标题翻译：掩模制造系统，掩模数据创建方法和半导体器件的制造方法
公开(公告)号：US20070124718A1
公开(公告)日：2007-05-31
申请号：US11440086
申请日：2006-05-25
申请人： Sachiko Kobayashi , Toshiya Kotani
发明人： Sachiko Kobayashi , Toshiya Kotani
IPC分类号： G06F17/50
CPC分类号： G03F1/68 , G03F1/36
摘要： A mask manufacturing system and a mask data creating method reusing data for processing information and environment in the past to reduce a photomask developing period, and a manufacturing method of a semiconductor device are disclosed. According to one aspect of the present invention, it is provided a mask manufacturing system comprising a storage device storing processing data for semiconductor integrated circuits processed in the past, a plurality of operation processing modules, a module selecting section selecting at least one operation processing modules, an optical proximity effect correction section executing optical proximity effect correction to a processing object data and generating a correction data by utilizing past correction information applied for a stored data equivalent to the processing object data, a converting section converting the processing object data into mask data, and a drawing system drawing a mask pattern based on the mask data.
摘要翻译：掩模制造系统和掩模数据创建方法重复利用用于处理信息和环境的数据以减少光掩模生长期，以及半导体器件的制造方法。根据本发明的一个方面，提供了一种掩模制造系统，包括存储用于过去处理的半导体集成电路的处理数据的存储装置，多个操作处理模块，模块选择部分，其选择至少一个操作处理模块光学接近效应校正部分，对处理对象数据执行光学邻近效应校正，并通过利用应用于与处理对象数据相当的存储数据的过去校正信息产生校正数据;转换部分，将处理对象数据转换成掩模数据以及基于掩模数据绘制掩模图案的绘图系统。

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