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1. 发明授权

US6004701A Method for designing Levenson photomask 失效
标题翻译：设计Levenson光掩模的方法
公开(公告)号：US6004701A
公开(公告)日：1999-12-21
申请号：US46794
申请日：1998-03-24
申请人： Taiga Uno , Kiyomi Koyama , Kazuko Yamamoto , Satoshi Tanaka , Sachiko Kobayashi , Koji Hashimoto
发明人： Taiga Uno , Kiyomi Koyama , Kazuko Yamamoto , Satoshi Tanaka , Sachiko Kobayashi , Koji Hashimoto
IPC分类号： G03F1/30 , G03F1/68 , H01L21/027 , G03F9/00 , G06F17/50
CPC分类号： G03F1/30
摘要： In a Levenson photomask design method of partially forming a plurality of opening patterns for passing incident light in a light-shielding film for shielding the incident light, and arranging, on some patterns, phase shifters, line segment pairs of different patterns which are adjacent to each other within a predetermined distance R are extracted in units of line segments obtained by dividing the patterns. A pattern within a predetermined distance S from the central point of the opposite region of a line segment pair of interest in a direction perpendicular to the line segments is obtained. The obtained pattern is subjected to a process simulation to obtain resolution easiness representing the easiness in resolving the adjacent patterns. On the basis of the resolution easiness obtained for the adjacent pattern pair within the distance R, a phase shifter is arranged in ascending order of resolution easiness to give a phase difference. Resolution suitable for the exposure condition used can be obtained by a simple method. When the shifter arrangement is determined in consideration of the resolution easiness, a high-resolution shifter arrangement can be realized for a Levenson phase shift mask.
摘要翻译：在莱文森光掩模设计方法中，部分地形成用于使入射光入射到遮光膜中的入射光的多个开口图案，用于屏蔽入射光，并且在某些图案上布置移相器，与不同图案相邻的线段对以规定的距离R为单位，以通过划分图案而得到的线段为单位提取。获得与垂直于线段的方向相关的线段对的相对区域的中心点的预定距离S内的图案。对所获得的图案进行处理模拟以获得表示分辨相邻图案的容易性的分辨率容易度。基于在距离R内对相邻图案对获得的分辨率容易度，移位器按分辨率的顺序排列顺序排列以给出相位差。可以通过简单的方法获得适合于所使用的曝光条件的分辨率。考虑到分辨率容易度来确定移位器装置时，可以实现对莱文森相移掩模的高分辨率移位器装置。

2. 发明授权

US06622297B2 Pattern correcting method and pattern verifying method 有权
公开(公告)号：US06622297B2
公开(公告)日：2003-09-16
申请号：US09956987
申请日：2001-09-21
申请人： Taiga Uno , Kazuko Yamamoto , Sachiko Kobayashi , Satoshi Tanaka
发明人： Taiga Uno , Kazuko Yamamoto , Sachiko Kobayashi , Satoshi Tanaka
IPC分类号： G06F1750
CPC分类号： G03F1/36
摘要： A pattern of exposure mask-use design data having a hierarchical structure is corrected in order to finish with fidelity a transfer pattern to be formed on a wafer, in which if the exposure apparatus has a light source shape that does not have rotation symmetry at any given angle around an optical axis, as the center, of an illumination optics or a projection optics, a cell A rotated in arrangement in input data having a hierarchical structure is replaced with a cell A′ not employing rotation and then optical proximity correction is effected.

3. 发明授权

US08527914B2 Flare map calculating method and recording medium 有权
标题翻译：耀斑图计算方法和记录介质
公开(公告)号：US08527914B2
公开(公告)日：2013-09-03
申请号：US13615691
申请日：2012-09-14
申请人： Taiga Uno , Toshiya Kotani , Satoshi Tanaka
发明人： Taiga Uno , Toshiya Kotani , Satoshi Tanaka
IPC分类号： G06F17/50
CPC分类号： G03F7/70941 , G03F1/70
摘要： A flare map calculating method of an embodiment calculates an optical image intensity distribution in each division region set in a pattern region. Furthermore, an average value of the optical image intensity distribution is calculated in each division region. A pattern or plural patterns, which has a pattern density corresponding to the average value, is calculated as a corresponding density pattern in each division region. Furthermore, a density map, which represents a pattern density distribution within the pattern region, is generated based on the corresponding density pattern, and a flare map representing a flare intensity distribution within the pattern region is calculated by convolution integral of the density map and a point spread function.
摘要翻译：实施例的耀斑映射计算方法计算在图案区域中设置的每个划分区域中的光学图像强度分布。此外，在每个划分区域中计算出光学图像强度分布的平均值。在每个划分区域中计算具有对应于平均值的图案密度的图案或多个图案作为相应的浓度图案。此外，基于对应的浓度模式生成表示图案区域内的图案密度分布的密度图，并且通过密度图和a的卷积积分来计算表示图案区域内的耀斑强度分布的耀斑图点扩散功能。

4. 发明申请

US20100166289A1 FEATURE-QUANTITY EXTRACTING METHOD, DESIGNED-CIRCUIT-PATTERN VERIFYING METHOD, AND COMPUTER PROGRAM PRODUCT 审中-公开
标题翻译：特征提取方法，设计电路图形验证方法和计算机程序产品
公开(公告)号：US20100166289A1
公开(公告)日：2010-07-01
申请号：US12646677
申请日：2009-12-23
申请人： Masaki SATAKE , Masafumi Asano , Satoshi Tanaka , Taiga Uno
发明人： Masaki SATAKE , Masafumi Asano , Satoshi Tanaka , Taiga Uno
IPC分类号： G06K9/46 , G06T7/00
CPC分类号： G03F1/44 , G03F7/705
摘要： Feature-quantity extraction parameters used by feature-quantity extraction functions for calculating feature quantities used as explanatory variables of a resist model for predicting a resist image are set. The feature-quantity extraction functions, for which the feature-quantity extraction parameters are set, are caused to act on optical images of a pattern of a photomask to calculate feature quantities from the optical images.
摘要翻译：设置用于计算用作预测抗蚀剂图像的抗蚀剂模型的解释变量的特征量的特征量提取函数所使用的特征量提取参数。使特征量提取参数被设置的特征量提取功能作用于光掩模图案的光学图像，以计算来自光学图像的特征量。

5. 发明申请

US20120198396A1 METHOD OF OPTIMIZING SEMICONDUCTOR DEVICE MANUFACTURING PROCESS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND NON-TRANSITORY COMPUTER READABLE MEDIUM 审中-公开
标题翻译：优化半导体器件制造工艺的方法，制造半导体器件的方法和非电子计算机可读介质
公开(公告)号：US20120198396A1
公开(公告)日：2012-08-02
申请号：US13237854
申请日：2011-09-20
申请人： Masanari KAJIWARA , Sachiko Kobayashi , Satoshi Tanaka , Kazuhiro Takahata , Shigeki Nojima , Toshiya Kotani , Shimon Maeda
发明人： Masanari KAJIWARA , Sachiko Kobayashi , Satoshi Tanaka , Kazuhiro Takahata , Shigeki Nojima , Toshiya Kotani , Shimon Maeda
IPC分类号： G06F17/50
CPC分类号： H01L22/20 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A method of optimizing a semiconductor device manufacturing process according to an embodiment is a method of optimizing a semiconductor device manufacturing process in which a pattern based on circuit design is formed. The method of optimizing a semiconductor device manufacturing process according to the embodiment includes: at the time of calculation of a statistic amount based on a distribution of differences at a plurality of sites between a pattern formed by a first exposing apparatus in a first condition and a pattern formed by a second exposing apparatus in a second condition, calculating the statistic amount after applying weighting to the differences based on information on an electrical characteristic; and repeating the calculating with the second condition being changed, and selecting an condition in which the total sum becomes a minimum or equal to or less than a standard value as an optimized condition of the second exposing apparatus.
摘要翻译：根据实施例的优化半导体器件制造工艺的方法是优化其中形成基于电路设计的图案的半导体器件制造工艺的方法。根据实施例的半导体器件制造方法的优化方法包括：在基于在第一状态下由第一曝光装置形成的图案与第一状态之间的多个位置处的差异的分布的统计量的计算时，在第二状态下由第二曝光装置形成的图案，基于关于电特性的信息对所述差进行加权计算后的统计量; 并重复进行第二条件的计算，并且选择总和变为最小或等于或小于标准值的条件作为第二曝光装置的优化条件。

6. 发明申请

US20120246602A1 METHOD OF PREPARING PATTERN, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND COMPUTER PROGRAM PRODUCT 审中-公开
标题翻译：制作图案的方法，制造半导体器件的方法和计算机程序产品
公开(公告)号：US20120246602A1
公开(公告)日：2012-09-27
申请号：US13237663
申请日：2011-09-20
申请人： Sachiko Kobayashi , Satoshi Tanaka , Shigeki Nojima , Kazuhiro Takahata
发明人： Sachiko Kobayashi , Satoshi Tanaka , Shigeki Nojima , Kazuhiro Takahata
IPC分类号： G06F17/50
CPC分类号： G03F1/36 , G03F1/70 , H01L27/0207
摘要： An embodiment provides a method of preparing a pattern. In the pattern preparing method, when mask patterns corresponding to on-substrate patterns are prepared to form the on-substrate patterns corresponding to design patterns, the mask patterns are prepared based on a correlation which needs to be satisfied between the design patterns so that a relation which same the correlation can be satisfied between the mask patterns corresponding to the design patterns.
摘要翻译：实施例提供了一种制备图案的方法。在图案制作方法中，当准备对应于衬底图案的掩模图案以形成与设计图案相对应的衬底上图案时，基于需要在设计图案之间满足的相关性来准备掩模图案，使得在与设计图案对应的掩模图案之间可以满足相关性的关系。

7. 发明授权

US06907596B2 Mask data generating apparatus, a computer implemented method for generating mask data and a computer program for controlling the mask data generating apparatus 失效
标题翻译：掩模数据产生装置，用于产生掩模数据的计算机实现方法和用于控制掩模数据产生装置的计算机程序
公开(公告)号：US06907596B2
公开(公告)日：2005-06-14
申请号：US10385624
申请日：2003-03-12
申请人： Sachiko Kobayashi , Toshiya Kotani , Satoshi Tanaka , Susumu Watanabe
发明人： Sachiko Kobayashi , Toshiya Kotani , Satoshi Tanaka , Susumu Watanabe
IPC分类号： G03F1/36 , G03F1/68 , G03F1/70 , H01L21/027 , H01L21/82 , G06F17/50
CPC分类号： G03F1/36
摘要： A mask data generating apparatus comprising: a division module configured to extract a line segment and dividing the extracted line segment into a suitable length; a correction value calculation module configured to calculate correction value calculating points from each divided edge; a first calculated center point calculation module configured to set first calculated center points and a shape of a pattern; a first rectangular region preparation module configured to prepare first simulation regions and a plurality of first rectangular regions which overlap with each other; a second calculated center point calculation module configured to acquire second rectangular regions, and calculating second calculated center points based on the second rectangular regions; a second simulation region preparation module configured to acquire second simulation regions; a process simulation execution module configured to calculate a correction value; and a correction pattern preparation module configured to prepare the correction pattern.
摘要翻译：一种掩模数据生成装置，包括：分割模块，被配置为提取线段并将所提取的线段划分成合适的长度; 校正值计算模块，被配置为从每个分割边缘计算校正值计算点; 第一计算中心点计算模块，被配置为设置第一计算的中心点和图案的形状; 第一矩形区域准备模块，被配置为准备第一模拟区域和彼此重叠的多个第一矩形区域; 第二计算中心点计算模块，被配置为获取第二矩形区域，并且基于所述第二矩形区域计算第二计算的中心点; 配置成获取第二模拟区域的第二模拟区域准备模块; 被配置为计算校正值的过程模拟执行模块; 以及配置为准备校正图案的校正图案准备模块。

8. 发明授权

US07065739B2 Pattern correction method of semiconductor device 失效
标题翻译：半导体器件的图案校正方法
公开(公告)号：US07065739B2
公开(公告)日：2006-06-20
申请号：US10331005
申请日：2002-12-27
申请人： Sachiko Kobayashi , Toshiya Kotani , Satoshi Tanaka , Susumu Watanabe , Mitsuhiro Yano
发明人： Sachiko Kobayashi , Toshiya Kotani , Satoshi Tanaka , Susumu Watanabe , Mitsuhiro Yano
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G03F1/36 , G03F7/70441
摘要： A pattern correction method executed by a computer includes a first correction and a second correction. The first correction is executed by calculating a correction value, in consideration for an optical proximity effect, for edges (first edges) meeting a condition among the edges constituting a designed pattern. Subsequently, The second correction is executed for an edge (second edge) which does not meet the condition, by use of the correction value of any one of the edges (first edges) adjacent to the second edge among the first edges for which the first correction is executed, thus connecting the corrected first edge and the corrected second edge by a line segment. The pattern is corrected to a shape suitable for a mask drawing and a check with simple processing.
摘要翻译：由计算机执行的图案校正方法包括第一校正和第二校正。对于构成设计图案的边缘中满足条件的边缘（第一边缘），考虑光学邻近效应来计算校正值来执行第一校正。随后，对于不符合条件的边缘（第二边缘），通过使用与第一边缘相邻的边缘（第一边缘）中的任何一个边缘（第一边缘）的第一边缘的第一边缘执行校正，从而将校正的第一边缘和校正的第二边缘连接到线段。该图案被校正为适于掩模绘图和具有简单处理的检查的形状。

9. 发明授权

US06964031B2 Mask pattern generating method and manufacturing method of semiconductor apparatus 失效
标题翻译：半导体装置的掩模图案生成方法和制造方法
公开(公告)号：US06964031B2
公开(公告)日：2005-11-08
申请号：US10255832
申请日：2002-09-27
申请人： Toshiya Kotani , Satoshi Tanaka , Soichi Inoue , Sachiko Kobayashi , Hirotaka Ichiakwa
发明人： Toshiya Kotani , Satoshi Tanaka , Soichi Inoue , Sachiko Kobayashi , Hirotaka Ichiakwa
IPC分类号： H01L21/027 , G03F1/00 , G03F1/36 , G06F17/50 , H01L21/00
CPC分类号： G03F1/36
摘要： A mask pattern generation method of generating a mask pattern from a designed pattern, comprising preparing the designed pattern, preparing a correction parameter, preparing a first correction library in which a plurality of pairs of an edge coordinate group and a correction value group to correct the edge coordinate group is registered, acquiring edge coordinate groups of the designed patterns, generating a second correction library in which only the plurality of pairs of an edge coordinate group agreeing with the acquired edge coordinate group and the correction value group is registered in the first correction library and simulation using the correction parameter, and correcting the designed pattern using the second correction library.
摘要翻译：一种从设计图案生成掩模图案的掩模图案生成方法，包括准备设计图案，准备校正参数，准备第一校正库，其中多对边缘坐标组和校正值组校正第登记边缘坐标组，获取所设计图案的边缘坐标组，生成第二校正库，其中在所述第一校正中仅登记与获取的边缘坐标组和校正值组一致的边缘坐标组的多对对库和模拟，并使用第二校正库校正设计的模式。

10. 发明授权

US08312396B2 Set of masks, method of generating mask data and method for forming a pattern 有权
标题翻译：一组掩模，生成掩模数据的方法和形成图案的方法
公开(公告)号：US08312396B2
公开(公告)日：2012-11-13
申请号：US13289099
申请日：2011-11-04
申请人： Satoshi Tanaka , Koji Hashimoto
发明人： Satoshi Tanaka , Koji Hashimoto
IPC分类号： G06F17/50
CPC分类号： H01L21/0274 , G03F1/70 , G06F17/5068 , H01L21/31144 , H01L21/32139
摘要： A method of generating mask data, for a set of masks used to transfer a pattern for delineating a circuit pattern of a semiconductor integrated circuit, includes preparing design data having a design pattern corresponding to the pattern to be transferred on a semiconductor substrate; generating resized data by enlarging the design data by a resizing quantity; generating first mask data by filling a space area having a space width of a space quantity or less of the resized data; and generating second mask data, to be aligned with the first mask data, having a window portion for selectively exposing an area determined by enlarging the space area by the resizing quantity.
摘要翻译：一种用于生成用于传送用于描绘半导体集成电路的电路图案的图案的掩模组的掩模数据的方法，包括：准备具有与要在半导体衬底上传送的图案相对应的设计图案的设计数据; 通过调整大小的数量扩大设计数据来生成调整大小的数据; 通过填充具有空间大小的空间宽度的空间区域来生成第一掩模数据; 以及生成与所述第一掩模数据对准的第二掩模数据，所述第二掩模数据具有窗口部分，用于通过所述调整大小量选择性地暴露由所述空间区域扩大所确定的区域。

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