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1. 发明授权

US6060368A Mask pattern correction method 失效
标题翻译：掩模图案校正方法和系统
公开(公告)号：US6060368A
公开(公告)日：2000-05-09
申请号：US206364
申请日：1998-12-07
申请人： Koji Hashimoto , Hisako Aoyama , Soichi Inoue , Kazuko Yamamoto , Sachiko Kobayashi
发明人： Koji Hashimoto , Hisako Aoyama , Soichi Inoue , Kazuko Yamamoto , Sachiko Kobayashi
IPC分类号： G03F1/36 , G03F1/72 , G03F7/20 , H01L21/027 , H01L21/76
CPC分类号： G03F7/70441 , G03F1/36
摘要： This invention is provided to eliminate the optical proximity effect which will occur because of different rates of dimensional change between before and after etching when a plurality of gate materials are etched in a single device. After a to-be-corrected region is extracted, an n.sup.+ -type polysilicon gate layer is extracted. Then, the distance is calculated from the n.sup.+ -type polysilicon gate layer to a pattern adjacent thereto which can be a p.sup.+ -type polysilicon gate layer, thereby correcting the size of the n.sup.+ -type polysilicon gate layer with reference to a correction table for the pattern adjacent to the n.sup.+ -type polysilicon gate layer. After that, a p.sup.+ -type polysilicon gate layer is extracted. Then, the distance is calculated from the p.sup.+ -type polysilicon gate layer to a pattern adjacent thereto which can be an n.sup.+ -type polysilicon gate layer, thereby correcting the size of the p.sup.+ -type polysilicon gate layer with reference to a correction table for the pattern adjacent to the p.sup.+ -type polysilicon gate layer.
摘要翻译：提供本发明以消除当在单个器件中蚀刻多个栅极材料时在蚀刻之前和之后不同的尺寸变化率而将发生的光学邻近效应。在提取待校正区域之后，提取n +型多晶硅栅极层。然后，从n +型多晶硅栅极层到可以是p +型多晶硅栅极层的与其相邻的图案计算距离，从而参照n +型多晶硅栅极层的校正表来校正n +型多晶硅栅极层的尺寸图案与n +型多晶硅栅极层相邻。之后，提取p +型多晶硅栅极层。然后，从p +型多晶硅栅极层到与其相邻的图案，其可以是n +型多晶硅栅极层，从而根据用于的p +型多晶硅栅极层的校正表来校正p +型多晶硅栅极层的尺寸，图案与p +型多晶硅栅极层相邻。

2. 发明申请

US20100102000A1 METHOD FOR FILTERING CHEMICAL 失效
标题翻译：过滤方法
公开(公告)号：US20100102000A1
公开(公告)日：2010-04-29
申请号：US12561768
申请日：2009-09-17
申请人： Yoshihisa KAWAMURA , Hisako Aoyama , Daizo Mutoh
发明人： Yoshihisa KAWAMURA , Hisako Aoyama , Daizo Mutoh
IPC分类号： B01D15/00
CPC分类号： G01N1/4077 , G01N2001/4088
摘要： A method for filtering a chemical in which a first chemical stored in a first tank is filtered by a filter and a second chemical obtained by the filtering is stored in a second tank has: adding the capture amounts corresponding to the individual first chemicals first to n-th stored in the first tank, and getting an added capture amount; and comparing the added capture amount and a predetermined limit capture amount of the filter, and exchanging the filter based on the comparison result.
摘要翻译：一种用于过滤化学品的方法，其中通过过滤器过滤存储在第一罐中的第一化学品的化学品和通过过滤获得的第二化学品储存在第二罐中的方法：将对应于各个第一化学品的捕获量首先添加到n 储存在第一个储罐中，并获得额外的捕获量; 以及比较所添加的捕获量和所述滤波器的预定极限捕获量，以及基于所述比较结果交换所述滤波器。

3. 发明授权

US06794286B2 Process for fabricating a metal wiring and metal contact in a semicondutor device 失效
标题翻译：在半导体器件中制造金属布线和金属接触的工艺
公开(公告)号：US06794286B2
公开(公告)日：2004-09-21
申请号：US09558053
申请日：2000-04-26
申请人： Hisako Aoyama , Kyoichi Suguro , Hiromi Niiyama , Hitoshi Tamura , Hisataka Hayashi , Tomonori Aoyama , Gaku Minamihaba , Tadashi Iijima
发明人： Hisako Aoyama , Kyoichi Suguro , Hiromi Niiyama , Hitoshi Tamura , Hisataka Hayashi , Tomonori Aoyama , Gaku Minamihaba , Tadashi Iijima
IPC分类号： H01L214763
CPC分类号： H01L21/76834 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/7681 , H01L21/76813 , H01L21/76814 , H01L21/76826 , H01L21/76829 , H01L21/76831 , H01L21/76832 , H01L21/7684 , H01L21/76843 , H01L21/76847 , H01L21/76849 , H01L21/7685 , H01L21/76852 , H01L21/76856 , H01L21/76858 , H01L21/76867 , H01L21/76877 , H01L21/76885 , H01L21/76897 , H01L23/53233 , H01L23/53238 , H01L23/53242 , H01L23/53247 , H01L23/53252 , H01L23/5329 , H01L23/53295 , H01L2221/1036 , H01L2924/0002 , Y10S257/915 , H01L2924/00
摘要： A semiconductor device comprises a semiconductor substrate in which a semiconductor element is formed, an interlayer insulating film formed on the semiconductor substrate, an insulating barrier layer, formed on the interlayer insulating film by plasma nitriding, for preventing diffusion of a metal constituting a wiring layer, a conductive barrier layer, formed on the insulating barrier layer, for preventing diffusion of the metal, and a wiring layer formed of the metal on the conductive barrier layer. A bottom portion of the wiring layer is protected by the conductive barrier layer and the insulating barrier layer. Therefore, the diffusion of the metal constituting the wiring layer can be surely prevented.
摘要翻译：半导体器件包括其中形成半导体元件的半导体衬底，形成在半导体衬底上的层间绝缘膜，通过等离子体氮化形成在层间绝缘膜上的绝缘阻挡层，用于防止构成布线层的金属的扩散形成在绝缘阻挡层上的用于防止金属扩散的导电阻挡层，以及由金属形成的布线层在导电阻挡层上。布线层的底部由导电阻挡层和绝缘阻挡层保护。因此，可以可靠地防止构成布线层的金属的扩散。

4. 发明申请

US20080014535A1 Method for detecting defects which originate from chemical solution and method of manufacturing semiconductor device 有权
标题翻译：用于检测源自化学溶液的缺陷的方法和制造半导体器件的方法
公开(公告)号：US20080014535A1
公开(公告)日：2008-01-17
申请号：US11797529
申请日：2007-05-04
申请人： Hisako Aoyama , Yuji Kobayashi
发明人： Hisako Aoyama , Yuji Kobayashi
IPC分类号： G03C5/00
CPC分类号： G01N21/956 , G03F1/44
摘要： A method for detecting defects which originate from a chemical solution includes coating a chemical solution on a surface of a mask, and radiating an exposure beam to the mask on which the chemical solution is coated, thereby performing enlarged projection exposure on a resist film which is formed on a surface of a substrate for an inspection. Further, the method for detecting defects which originate from a chemical solution includes performing an inspection of defects on the resist film which has been subjected to the enlarged projection exposure, and determining whether a result of the inspection meets a predetermined standard.
摘要翻译：用于检测来自化学溶液的缺陷的方法包括将化学溶液涂布在掩模的表面上，并且将曝光光束照射到其上涂覆有化学溶液的掩模，从而对抗蚀剂膜进行放大的投影曝光，该抗蚀剂膜是形成在用于检查的基板的表面上。此外，用于检测来自化学溶液的缺陷的方法包括对经过放大的投影曝光的抗蚀剂膜上的缺陷进行检查，并确定检查结果是否达到预定标准。

5. 发明授权

US07075098B2 Method of selecting pattern to be measured, pattern inspection method, manufacturing method of semiconductor device, program, and pattern inspection apparatus 失效
标题翻译：选择待测图案的方法，图案检查方法，半导体装置的制造方法，程序和图案检查装置
公开(公告)号：US07075098B2
公开(公告)日：2006-07-11
申请号：US10730921
申请日：2003-12-10
申请人： Takahiro Ikeda , Daisuke Kawamura , Hisako Aoyama
发明人： Takahiro Ikeda , Daisuke Kawamura , Hisako Aoyama
IPC分类号： G01N21/86
CPC分类号： G01N21/9501 , G01N21/95607
摘要： A method of selecting a pattern to be measured includes selecting only points from a combination of all factors effecting dimensional fluctuations. For example, fluctuation between wafers, fluctuation in a wafer, and fluctuation in a chip are candidates for measurement points of patterns to be measured. Further, the number of the selected points corresponds to a divisor of the combination of all factors.
摘要翻译：选择要测量的图案的方法包括仅从影响尺寸波动的所有因素的组合中选择点。例如，晶片之间的波动，晶片的波动和芯片的波动是待测量图案的测量点的候选。此外，所选择的点的数量对应于所有因子的组合的除数。

6. 发明授权

US07862965B2 Method for detecting defects which originate from chemical solution and method of manufacturing semiconductor device 有权
标题翻译：用于检测源自化学溶液的缺陷的方法和制造半导体器件的方法
公开(公告)号：US07862965B2
公开(公告)日：2011-01-04
申请号：US11797529
申请日：2007-05-04
申请人： Hisako Aoyama , Yuji Kobayashi
发明人： Hisako Aoyama , Yuji Kobayashi
IPC分类号： G03F9/00 , G03C5/00
CPC分类号： G01N21/956 , G03F1/44
摘要： A method for detecting defects which originate from a chemical solution includes coating a chemical solution on a surface of a mask, and radiating an exposure beam to the mask on which the chemical solution is coated, thereby performing enlarged projection exposure on a resist film which is formed on a surface of a substrate for an inspection. Further, the method for detecting defects which originate from a chemical solution includes performing an inspection of defects on the resist film which has been subjected to the enlarged projection exposure, and determining whether a result of the inspection meets a predetermined standard.
摘要翻译：用于检测来自化学溶液的缺陷的方法包括将化学溶液涂布在掩模的表面上，并且将曝光光束照射到其上涂覆有化学溶液的掩模，从而对抗蚀剂膜进行放大的投影曝光，该抗蚀剂膜是形成在用于检查的基板的表面上。此外，用于检测来自化学溶液的缺陷的方法包括对经过放大的投影曝光的抗蚀剂膜上的缺陷进行检查，并确定检查结果是否达到预定标准。

7. 发明授权

US5592024A Semiconductor device having a wiring layer with a barrier layer 失效
标题翻译：具有具有阻挡层的布线层的半导体器件
公开(公告)号：US5592024A
公开(公告)日：1997-01-07
申请号：US330998
申请日：1994-10-28
申请人： Hisako Aoyama , Kyoichi Suguro , Hiromi Niiyama , Hitoshi Tamura , Hisataka Hayashi , Tomonori Aoyama , Gaku Minamihaba , Tadashi Iijima
发明人： Hisako Aoyama , Kyoichi Suguro , Hiromi Niiyama , Hitoshi Tamura , Hisataka Hayashi , Tomonori Aoyama , Gaku Minamihaba , Tadashi Iijima
IPC分类号： H01L21/3205 , H01L21/60 , H01L21/768 , H01L23/532 , H01L23/535 , H01L29/41 , H01L29/43
CPC分类号： H01L21/76834 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/7681 , H01L21/76814 , H01L21/76822 , H01L21/76826 , H01L21/76829 , H01L21/76831 , H01L21/76832 , H01L21/7684 , H01L21/76843 , H01L21/76847 , H01L21/76849 , H01L21/7685 , H01L21/76852 , H01L21/76856 , H01L21/76858 , H01L21/76867 , H01L21/76877 , H01L21/76885 , H01L21/76897 , H01L23/53233 , H01L23/53238 , H01L23/53242 , H01L23/53247 , H01L23/53252 , H01L23/5329 , H01L23/53295 , H01L2221/1036 , H01L2924/0002 , Y10S257/915
摘要： A semiconductor device comprises a semiconductor substrate in which a semiconductor element is formed, an interlayer insulating film formed on the semiconductor substrate, an insulating barrier layer, formed on the interlayer insulating film by plasma nitriding, for preventing diffusion of a metal constituting a wiring layer, a conductive barrier layer, formed on the insulating barrier layer, for preventing diffusion of the metal, and a wiring layer formed of the metal on the conductive barrier layer. A bottom portion of the wiring layer is protected by the conductive barrier layer and the insulating barrier layer. Therefore, the diffusion of the metal constituting the wiring layer can be surely prevented.
摘要翻译：半导体器件包括其中形成半导体元件的半导体衬底，形成在半导体衬底上的层间绝缘膜，通过等离子体氮化形成在层间绝缘膜上的绝缘阻挡层，用于防止构成布线层的金属的扩散形成在绝缘阻挡层上的用于防止金属扩散的导电阻挡层，以及由金属形成的布线层在导电阻挡层上。布线层的底部由导电阻挡层和绝缘阻挡层保护。因此，可以可靠地防止构成布线层的金属的扩散。

8. 发明授权

US08097169B2 Method for filtering chemical 失效
标题翻译：过滤化学品的方法
公开(公告)号：US08097169B2
公开(公告)日：2012-01-17
申请号：US12561768
申请日：2009-09-17
申请人： Yoshihisa Kawamura , Hisako Aoyama , Daizo Mutoh
发明人： Yoshihisa Kawamura , Hisako Aoyama , Daizo Mutoh
IPC分类号： C02F1/00
CPC分类号： G01N1/4077 , G01N2001/4088
摘要： A method for filtering a chemical in which a first chemical stored in a first tank is filtered by a filter and a second chemical obtained by the filtering is stored in a second tank has: adding the capture amounts corresponding to the individual first chemicals first to n-th stored in the first tank, and getting an added capture amount; and comparing the added capture amount and a predetermined limit capture amount of the filter, and exchanging the filter based on the comparison result.
摘要翻译：一种用于过滤化学品的方法，其中通过过滤器过滤存储在第一罐中的第一化学品的化学品和通过过滤获得的第二化学品储存在第二罐中的方法：将对应于各个第一化学品的捕获量首先添加到n 储存在第一个储罐中，并获得额外的捕获量; 以及比较所添加的捕获量和所述滤波器的预定极限捕获量，以及基于所述比较结果交换所述滤波器。

9. 发明申请

US20070010028A1 Chemical solution qualification method, semiconductor device fabrication method, and liquid crystal display manufacturing method 审中-公开
标题翻译：化学溶液鉴定方法，半导体器件制造方法和液晶显示器制造方法
公开(公告)号：US20070010028A1
公开(公告)日：2007-01-11
申请号：US11475125
申请日：2006-06-27
申请人： Takehiro Kondoh , Hisako Aoyama , Eishi Shiobara , Shinichi Ito
发明人： Takehiro Kondoh , Hisako Aoyama , Eishi Shiobara , Shinichi Ito
IPC分类号： G01N21/00
CPC分类号： G01N15/14 , G01N2015/1493
摘要： A method for qualifying a chemical solution is disclosed. This method (a) obtains the number of particles in a chemical solution for each size of the particles, and (b) predicts, for each size of the particles, the influence of the chemical solution on a device to be fabricated by using the chemical solution. The degree of influence of the chemical solution on the device is obtained by using the results of (a) and (b). The quality of the chemical solution is evaluated on the basis of the obtained result, and whether the chemical solution is good or bad is determined on the basis of the evaluation result. On the basis of the determination result, the chemical solution is qualified as a chemical solution for use in a fabrication step of the device.
摘要翻译：公开了一种用于限定化学溶液的方法。该方法（a）获得每种颗粒尺寸的化学溶液中的颗粒数，（b）对于每种尺寸的颗粒，预测化学溶液对通过使用化学品制造的装置的影响解。通过使用（a）和（b）的结果获得化学溶液对器件的影响程度。基于获得的结果评价化学溶液的质量，根据评价结果确定化学溶液的好坏。在确定结果的基础上，化学溶液被认定为用于装置的制造步骤中的化学溶液。

10. 发明授权

US6090699A Method of making a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US6090699A
公开(公告)日：2000-07-18
申请号：US736324
申请日：1996-10-23
申请人： Hisako Aoyama , Kyoichi Suguro , Hiromi Niiyama , Hitoshi Tamura , Hisataka Hayashi , Tomonori Aoyama , Gaku Minamihaba , Tadashi Iijima
发明人： Hisako Aoyama , Kyoichi Suguro , Hiromi Niiyama , Hitoshi Tamura , Hisataka Hayashi , Tomonori Aoyama , Gaku Minamihaba , Tadashi Iijima
IPC分类号： H01L21/3205 , H01L21/60 , H01L21/768 , H01L23/532 , H01L21/4763
CPC分类号： H01L21/76834 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/7681 , H01L21/76814 , H01L21/76822 , H01L21/76826 , H01L21/76829 , H01L21/76831 , H01L21/76832 , H01L21/7684 , H01L21/76843 , H01L21/76847 , H01L21/76849 , H01L21/7685 , H01L21/76852 , H01L21/76856 , H01L21/76858 , H01L21/76867 , H01L21/76877 , H01L21/76885 , H01L21/76897 , H01L23/53233 , H01L23/53238 , H01L23/53242 , H01L23/53247 , H01L23/53252 , H01L23/5329 , H01L23/53295 , H01L2221/1036 , H01L2924/0002 , Y10S257/915
摘要： A method of making a semiconductor device includes a semiconductor substrate in which a semiconductor element is formed, an interlayer insulating film formed on the semiconductor substrate, an insulating barrier layer, formed on the interlayer insulating film by plasma nitriding, for preventing diffusion of a metal constituting a wiring layer, a conductive barrier layer, formed on the insulating barrier layer, for preventing diffusion of the metal, and a wiring layer formed of the metal on the conductive barrier layer. A bottom portion of the wiring layer is protected by the conductive barrier layer and the insulating barrier layer. Therefore, the diffusion of the metal constituting the wiring layer can be surely prevented.
摘要翻译：制造半导体器件的方法包括其中形成半导体元件的半导体衬底，形成在半导体衬底上的层间绝缘膜，通过等离子体氮化形成在层间绝缘膜上的用于防止金属扩散的绝缘阻挡层构成布线层，形成在绝缘阻挡层上的用于防止金属扩散的导电阻挡层，以及由金属形成的布线层在导电阻挡层上。布线层的底部由导电阻挡层和绝缘阻挡层保护。因此，可以可靠地防止构成布线层的金属的扩散。

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