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1. 发明授权

US06486068B2 Method for manufacturing group III nitride compound semiconductor laser diodes 失效
标题翻译：制造III族氮化物半导体激光二极管的方法
公开(公告)号：US06486068B2
公开(公告)日：2002-11-26
申请号：US09004608
申请日：1998-01-08
申请人： Shiro Yamasaki , Seiji Nagai , Masayoshi Koike , Isamu Akasaki , Hiroshi Amano , Isao Yamada , Jiro Matsuo
发明人： Shiro Yamasaki , Seiji Nagai , Masayoshi Koike , Isamu Akasaki , Hiroshi Amano , Isao Yamada , Jiro Matsuo
IPC分类号： H01L21302
CPC分类号： H01S5/0201 , H01S5/0203 , H01S5/32341
摘要： A method for manufacturing a laser diode using Group III nitride compound semiconductor comprising a buffer layer 2, an n+ layer 3, a cladding layer 4, an active layer 5, a p-type cladding layer 61, a contact layer 62, an SiO2 layer 9, an electrode 7 which is formed on the window formed in a portion of the SiO2 layer 9, and an electrode 8 which is formed on a portion of the n+ layer 3 by etching a portion of 4 layers from the contact layer 62 down to the cladding layer 4. One pair of opposite facets S of a cavity is formed by RIBE, and then the facets are etched by gas cluster ion beam etching using Ar gas. As a result, the facets S are flatted and the mirror reflection of the facets S is improved.
摘要翻译：一种使用III族氮化物化合物半导体制造激光二极管的方法，包括缓冲层2，n +层3，包覆层4，有源层5，p型覆层61，接触层62，SiO 2层如图9所示，形成在形成在SiO 2层9的一部分上的窗口上的电极7和通过从接触层62蚀刻4层的一部分而形成在n +层3的一部分上的电极8，通过RIBE形成空腔的一对相对面S，然后通过使用Ar气体的气体簇离子束蚀刻蚀刻该刻面。结果，小面S变平，并且小面S的镜面反射得到改善。

2. 发明授权

US5889806A Group III nitride compound semiconductor laser diodes 失效
标题翻译： III族氮化物半导体激光二极管
公开(公告)号：US5889806A
公开(公告)日：1999-03-30
申请号：US908938
申请日：1997-08-08
申请人： Seiji Nagai , Shiro Yamasaki , Masayoshi Koike , Kazuyoshi Tomita , Tetsu Kachi , Isamu Akasaki , Hiroshi Amano
发明人： Seiji Nagai , Shiro Yamasaki , Masayoshi Koike , Kazuyoshi Tomita , Tetsu Kachi , Isamu Akasaki , Hiroshi Amano
IPC分类号： H01L33/06 , H01L33/14 , H01L33/20 , H01L33/32 , H01S5/00 , H01S5/20 , H01S5/32 , H01S5/323 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/343 , H01S5/2004 , H01S5/3211 , H01S5/34333
摘要： A laser diode using Group III nitride compound semiconductor consists of In.sub.0.2 Ga.sub.0.8 N/GaN SQW active layer 5, a pair of GaN guide layers 41 and 62, sandwiching the active layer with wider forbidden band than the active layer, and a pair of Al.sub.0.08 Ga.sub.0.92 N cladding layer 4 and 71, sandwiching a pair of the guide layers, and the LD confines carriers and light separately. Al.sub.0.15 Ga.sub.0.75 N stopper layers 41 and 62 with wider forbidden band than the guide layers are formed in some portion of each of the guide layers 41 and 62 in parallel to the active layer. As a result, carriers are confined in the active layer and the laser output of the LD is improved.
摘要翻译：使用III族氮化物化合物半导体的激光二极管由In0.2Ga0.8N / GaN SQW有源层5，一对GaN引导层41和62组成，其中活性层具有比有源层更宽的禁带，以及一对 Al0.08Ga0.92N包覆层4和71夹着一对引导层，LD分别限制载流子和光。每个引导层41和62的一部分平行于有源层形成具有比引导层更宽的禁带宽度的Al 0.15 Ga 0.75 N阻挡层41和62。结果，载流子被限制在有源层中，并且LD的激光输出被改善。

3. 发明授权

US06962828B1 Methods for manufacturing a light-emitting device 失效
标题翻译：制造发光装置的方法
公开(公告)号：US06962828B1
公开(公告)日：2005-11-08
申请号：US09711908
申请日：2000-11-15
申请人： Norikatsu Koide , Masayoshi Koike , Shiro Yamasaki , Isamu Akasaki , Hiroshi Amano
发明人： Norikatsu Koide , Masayoshi Koike , Shiro Yamasaki , Isamu Akasaki , Hiroshi Amano
IPC分类号： H01L21/86 , H01L33/32 , H01S5/00 , H01S5/02 , H01S5/323 , H01L21/00
CPC分类号： H01L33/32 , H01S5/0213 , H01S5/32341
摘要： A novel light-emitting device includes a saphire substrate with a light-emitting layer comprising InXGa1−XN, where the critical value of the indium mole fraction X is determined by a newly derived relationship between the indium mole fraction X and the wavelength λ of emitted light.
摘要翻译：一种新颖的发光器件包括具有包含In x N Ga 1-X N的发光层的锡箔衬底，其中铟摩尔分数X的临界值为通过铟摩尔分数X和发射光的波长λ之间的新衍生关系来确定。

4. 发明授权

US06188087B1 Semiconductor light-emitting device 失效
标题翻译：半导体发光装置
公开(公告)号：US06188087B1
公开(公告)日：2001-02-13
申请号：US08925323
申请日：1997-09-08
申请人： Norikatsu Koide , Masayoshi Koike , Shiro Yamasaki , Isamu Akasaki , Hiroshi Amano
发明人： Norikatsu Koide , Masayoshi Koike , Shiro Yamasaki , Isamu Akasaki , Hiroshi Amano
IPC分类号： H01L3300
CPC分类号： H01L33/32 , H01S5/0213 , H01S5/32341
摘要： A novel light-emitting device includes a sapphire substrate with a light-emitting layer comprising InXGa1−XN, where the critical value of the indium mole fraction X is determined by a newly derived relationship between the indium mole fraction X and the wavelength &lgr; of emitted light.
摘要翻译：一种新颖的发光器件包括具有包含InXGa1-XN的发光层的蓝宝石衬底，其中铟摩尔分数X的临界值由新的衍生的铟摩尔分数X与发射的波长长度之间的关系确定光。

5. 发明授权

US5862167A Light-emitting semiconductor device using gallium nitride compound 失效
标题翻译：使用氮化镓化合物的发光半导体器件
公开(公告)号：US5862167A
公开(公告)日：1999-01-19
申请号：US863397
申请日：1997-05-27
申请人： Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Junichi Umezaki , Naoki Shibata , Masayoshi Koike , Isamu Akasaki , Hiroshi Amano
发明人： Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Junichi Umezaki , Naoki Shibata , Masayoshi Koike , Isamu Akasaki , Hiroshi Amano
IPC分类号： H01L33/10 , H01L33/12 , H01L33/32 , H01L33/40 , H01L33/42 , H01L33/46 , H01S5/183 , H01S5/323 , H01S3/19
CPC分类号： H01L33/105 , H01L33/32 , H01S5/18375 , H01L33/405 , H01L33/465 , H01S5/0207 , H01S5/0213 , H01S5/32341
摘要： A light-emitting diode or laser diode is provided which uses a Group III nitride compound semiconductor satisfying the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N, inclusive of 0.ltoreq.x.ltoreq.1, and 0.ltoreq.y.ltoreq.1. A double hetero-junction structure is provided which sandwiches an active layer between layers having wider band gaps than the active layer. The diode has a multi-layer structure which has either a reflecting layer to reflect emission light or a reflection inhibiting layer. The emission light of the diode exits the diode in a direction perpendicular to the double hetero-junction structure. Light emitted in a direction opposite to the light outlet is reflected by the reflecting film toward the direction of the light outlet. Further, the reflection inhibiting film, disposed at or near the light outlet, helps the release of exiting light by minimizing or preventing reflection. As a result, light can be efficiently emitted by the light-generating diode.
摘要翻译：提供一种发光二极管或激光二极管，其使用满足式（Al x Ga 1-x）y In 1-y N的III族氮化物化合物半导体，包括0≤x≤1，0≤y< = 1。提供了一种双异质结结构，其在活性层之间具有更宽带隙的层之间夹持有源层。二极管具有多层结构，其具有反射发射光的反射层或反射抑制层。二极管的发射光在垂直于双异质结结构的方向上离开二极管。在与光出口相反的方向上发射的光被反射膜反射到光出口的方向。此外，设置在光出口处或附近的反射抑制膜通过最小化或防止反射来帮助释放出射光。结果，光可以被发光二极管有效地发射。

6. 发明授权

US5604763A Group III nitride compound semiconductor laser diode and method for producing same 失效
标题翻译： III族氮化物半导体激光二极管及其制造方法
公开(公告)号：US5604763A
公开(公告)日：1997-02-18
申请号：US423940
申请日：1995-04-19
申请人： Hisaki Kato , Norikatsu Koide , Masayoshi Koike , Isamu Akasaki , Hiroshi Amano
发明人： Hisaki Kato , Norikatsu Koide , Masayoshi Koike , Isamu Akasaki , Hiroshi Amano
IPC分类号： H01S5/02 , H01S5/323 , H01S3/19
CPC分类号： H01S5/32341 , H01S5/0202 , H01S5/0213
摘要： An improved laser diode is made of a gallium nitride compound semiconductor ((Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N; 0.ltoreq.x.ltoreq.1; 0.ltoreq.x.ltoreq.1) with a double heterojunction structure having the active layer held between layers having a greater band gap. The laser diode comprises mirror surfaces formed by cleaving the multi-layered coating and the sapphire substrate in directions parallel to (c axis) of the sapphire substrate. The intermediate zinc oxide (ZnO) layer is selectively removed by wet etching with a ZnO-selective liquid etchant so as to form gaps between the sapphire substrate and the bottom-most sub-layer of the semiconductor laser element layer. The semiconductor laser element layer is cleaved with the aid of the gaps, and the resulting planes of cleavage are used as the mirror surfaces of the laser cavity.
摘要翻译：改进的激光二极管由氮化镓化合物半导体（（Al x Ga 1-x）y In 1-y N; 0 （c轴）平行的方向上切割多层涂层和蓝宝石衬底而形成的镜面。通过用ZnO选择性液体蚀刻剂的湿蚀刻选择性地除去中间氧化锌（ZnO）层，以便在蓝宝石衬底和半导体激光元件层的最底层子层之间形成间隙。借助于间隙切割半导体激光元件层，并将所得到的切割平面用作激光腔的镜面。

7. 发明授权

US5620557A Sapphireless group III nitride semiconductor and method for making same 失效
标题翻译：无蓝宝石III族氮化物半导体及其制造方法
公开(公告)号：US5620557A
公开(公告)日：1997-04-15
申请号：US494846
申请日：1995-06-26
申请人： Katsuhide Manabe , Masayoshi Koike , Hisaki Kato , Norikatsu Koide , Isamu Akasaki , Hiroshi Amano
发明人： Katsuhide Manabe , Masayoshi Koike , Hisaki Kato , Norikatsu Koide , Isamu Akasaki , Hiroshi Amano
IPC分类号： C30B25/02 , H01L33/32 , H01L21/00
CPC分类号： C30B25/02 , C30B29/403 , C30B29/406 , H01L33/007 , H01L33/0075 , Y10S117/915
摘要： A method of manufacturing two sapphireless layers (3a, 3b) at one time made of Group III nitride compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0, and a LED (10) utilizing one of the semiconductor layers (3a, 3b) as a substrate (3) includes the steps of forming two zinc oxide (ZnO) intermediate layers (2a, 2b) on each side of a sapphire substrate (1), forming two Group III nitride compound semiconductor layers (3a, 3b) satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0, each laminated on each of the intermediate ZnO layers (2a, 2b), and separating the intermediate ZnO layers (2a, 2b) from the sapphire substrate (1) by etching with an etching liquid only for the ZnO layers (2a, 2b). At least one of the so-obtained Group III nitride compound layers is provided with n and p MOVPE layers (4, 5) formed thereon with electrodes (6, 7) on opposite sides to form an LED emitting in the 450 nm region and having a low device resistance.
摘要翻译：一次由满足公式Al x Ga y In 1-x-y N的III族氮化物化合物半导体制造两个蓝宝石层（3a，3b）的方法，包括x = 0，y = 0和x = y = 0，以及利用半导体层（3a，3b）之一作为基板（3）的LED（10）包括在蓝宝石基板（1）的每一侧上形成两个氧化锌（ZnO）中间层（2a，2b）的步骤，形成满足式Al x Ga y In 1-x-y N的两个III族氮化物化合物半导体层（3a，3b），包括x = 0，y = 0和x = y = 0，各层叠在每个中间ZnO层，2b），并且通过仅用于ZnO层（2a，2b）的蚀刻液蚀刻从中分离出中间ZnO层（2a，2b）和蓝宝石衬底（1）。如此获得的III族氮化物化合物层中的至少一个设置有在其上形成有电极（6,7）的相对侧上的n和p个MOVPE层（4,5），以形成在450nm区域中发射的LED，并且具有器件电阻低。

8. 发明申请

US20130330913A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20130330913A1
公开(公告)日：2013-12-12
申请号：US14001454
申请日：2011-02-25
申请人： Motoaki Iwaya , Hiroshi Amano , Isamu Akasaki
发明人： Motoaki Iwaya , Hiroshi Amano , Isamu Akasaki
IPC分类号： H01L21/02
CPC分类号： H01L21/02365 , H01L21/02458 , H01L21/0254 , H01L29/2003 , H01L33/007 , H01L33/0079 , H01L2224/16225
摘要： A structure includes a substrate, a template layer formed on the surface of the substrate and including an AlN layer, and a device structure portion formed by stacking AlGaN semiconductor layers on the template layer. For the structure, the AlN layer is irradiated from a side close to the substrate with a laser light with a wavelength by which the laser light passes through the substrate and the laser light is absorbed by the AlN layer, in a state in which the AlN layer receives compressive stress from the substrate. This allows the AlN layer to expand more than the surface of the substrate on at least an interface between the AlN layer and the substrate so as to increase the compressive stress, in order to remove the substrate from the AlN layer.
摘要翻译：一种结构包括基板，形成在基板的表面上并包括AlN层的模板层，以及通过在模板层上堆叠AlGaN半导体层而形成的器件结构部分。对于该结构，通过激光通过基板的激光的激光和激光被AlN层吸收，AlN层从靠近基板的一侧照射，其中AlN 层从基底接收压应力。这允许AlN层在AlN层和衬底之间的至少一个界面上比衬底的表面更多地膨胀，以便增加压缩应力，以便从AlN层去除衬底。

9. 发明申请

US20080277670A1 SiC crystal and semiconductor device 有权
标题翻译： SiC晶体和半导体器件
公开(公告)号：US20080277670A1
公开(公告)日：2008-11-13
申请号：US12152016
申请日：2008-05-12
申请人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya , Masahiro Yoshimoto , Hiroyuki Kinoshita
发明人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya , Masahiro Yoshimoto , Hiroyuki Kinoshita
IPC分类号： H01L33/00
CPC分类号： B23K35/262 , C22C13/00 , H01B1/026
摘要： The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×1017 cm−3; donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities. The present invention discloses a semiconductor device, comprising: a SiC fluorescent layer having acceptor impurities that are in a concentration greater than 5×1017 cm−3 and donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities; and a light emission layer that is layered on the SiC fluorescent layer and emits excitation light for the SiC fluorescent layer.
摘要翻译：本发明公开了一种SiC晶体，其包括：浓度大于5×10 17 cm -3的受主杂质; 供体杂质浓度小于1×10 9 -3 -3，且大于受体杂质的浓度。本发明公开了一种半导体器件，包括：具有浓度大于5×10 17 cm -3的受主杂质的SiC荧光层和位于浓度小于1×10 9 cm -3以上且大于受主杂质的浓度; 以及层叠在SiC荧光层上并发射用于SiC荧光层的激发光的发光层。

10. 发明授权

US07297989B2 Diboride single crystal substrate, semiconductor device using this and its manufacturing method 失效
标题翻译：二硼化物单晶基板，使用这种半导体器件及其制造方法
公开(公告)号：US07297989B2
公开(公告)日：2007-11-20
申请号：US10525753
申请日：2003-08-21
申请人： Shigeki Otani , Hiroyuki Kinoshita , Hiroyuki Matsunami , Jun Suda , Hiroshi Amano , Isamu Akasaki , Satoshi Kamiyama
发明人： Shigeki Otani , Hiroyuki Kinoshita , Hiroyuki Matsunami , Jun Suda , Hiroshi Amano , Isamu Akasaki , Satoshi Kamiyama
IPC分类号： H01L33/00
CPC分类号： H01L31/0264 , C30B29/10 , C30B33/00 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L29/045 , H01L29/24 , H01S5/0213 , H01S5/0218 , H01S5/32341
摘要： Disclosed are a diboride single crystal substrate which has a cleavage plane as same as that of a nitride compound semiconductor and is electrically conductive; a semiconductor laser diode and a semiconductor device using such a substrate and methods of their manufacture wherein the substrate is a single crystal substrate 1 of diboride XB2 (where X is either Zr or Ti) which is facially oriented in a (0001) plane 2 and has a thickness of 0.1 mm or less. The substrate 1 is permitted cleaving and splitting along a (10-10) plane 4 with ease. Using this substrate to form a semiconductor laser diode of a nitride compound, a vertical structure device can be realized. Resonant planes of a semiconductor laser diode with a minimum of loss can be fabricated by splitting the device in a direction parallel to the (10-10) plane. A method of manufacture that eliminates a margin of cutting is also realized.
摘要翻译：公开了具有与氮化物化合物半导体相同的解理面并具有导电性的二硼化物单晶基板; 半导体激光二极管和使用这种衬底的半导体器件及其制造方法，其中衬底是面向取向的二硼化物XB 2 N（其中X是Zr或Ti）的单晶衬底1 在（0001）面2中，具有0.1mm以下的厚度。允许衬底1容易地沿着（10-10）平面4进行切割和分割。使用该基板形成氮化物化合物的半导体激光二极管，可以实现垂直结构装置。具有最小损耗的半导体激光二极管的谐振平面可以通过在与（10-10）平面平行的方向上分割器件来制造。还实现了消除切割余量的制造方法。

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