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1. 发明授权

US07922439B2 Industrial robot 有权
标题翻译：工业机器人
公开(公告)号：US07922439B2
公开(公告)日：2011-04-12
申请号：US12314569
申请日：2008-12-12
申请人： Hisaki Kato
发明人： Hisaki Kato
IPC分类号： B25J19/00
CPC分类号： B25J19/0075 , Y10T74/20305
摘要： A robot comprises a fixed member that has a lower end, a movable member, and an elastic sheet member. The movable member is supported by the fixed member to be movable between an uppermost position and a lowermost position of a movable range given to the movable member in a vertical direction relative to the fixed member. This movable member has a lower end at which an operation tool is provided The elastic sheet member has both ends. Of these ends, one end is fixed to the lower end of the fixed member and the other end is fixed to the lower end of the movable member. This sheet member droops when the movable member moves up to the uppermost position of the fixed member.
摘要翻译：机器人包括具有下端的固定构件，可动构件和弹性片构件。可动构件由固定构件支撑，以能够相对于固定构件沿垂直方向在可移动构件的可移动范围的最上位置和最下位置之间移动。该可动构件具有设置有操作工具的下端。弹性片构件具有两端。在这些端部中，一端固定在固定部件的下端，另一端固定在可动部件的下端。当可动构件向上移动到固定构件的最上位置时，该片构件下垂。

2. 发明授权

US07623243B2 Spectroscopic device 有权
标题翻译：光谱仪
公开(公告)号：US07623243B2
公开(公告)日：2009-11-24
申请号：US10572369
申请日：2004-09-13
申请人： Hisaki Kato
发明人： Hisaki Kato
IPC分类号： G01N21/25
CPC分类号： G01J3/02 , G01J3/021 , G01J3/0256 , G01J3/36
摘要： A spectroscopic device that can suppress the occurrence of cross-talk when light beams of different wavelength ranges are optically received is provided. Detected light is made incident to a dichroic minor (hereinafter referred to as “mirror”) DM1 along the perpendicular direction of a photoelectric surface 7. Accordingly, light transmitted through the mirror DM1 is made incident substantially perpendicular to the photoelectric surface 7. On the other hand, light reflected from the mirror DM1 is reflected from a main mirror surface 23. At this time, the dichroic mirror array 21 is inclined so that the mirror DM8 side having the minimum shortest wavelength is nearer to the photoelectric surface 7 than the minor DM1 side having the maximum shortest wavelength and substantially parallel to the main minor surface 23a, so that light reflected from the main mirror surface 23a is made incident to the mirror DM2 along the perpendicular direction of the photoelectric surface 7. Accordingly, light transmitted through the mirror DM2 is made incident substantially perpendicular tote photoelectric surface 7. As described above, the light transmitted through each mirror DMn is substantially vertical made incident to the photoelectric surface 7, and thus the occurrence of cross-talk can be suppressed.
摘要翻译：提供了可以抑制在不同波长范围的光束被光学接收时串扰发生的分光装置。检测光沿光电表面7的垂直方向入射到二向色小型（以下称为“镜子”）DM1。因此，透过反射镜DM1的光基本上垂直于光电表面7入射。在从反射镜DM1反射的光从主镜面23反射。此时，分色镜阵列21倾斜，使得具有最小最短波长的反射镜DM8侧比次要的更靠近光电表面7 DM1侧具有最大最短波长并且基本上平行于主次表面23a，使得从主镜面23a反射的光沿光电表面7的垂直方向入射到反射镜DM2。因此，透过镜DM2被制成基本上垂直于光电表面7入射。如上所述，透光通过每个反射镜DMn基本垂直地入射到光电表面7，从而可以抑制串扰的发生。

3. 发明授权

US06984536B2 Method for manufacturing a gallium nitride group compound semiconductor 失效
标题翻译：氮化镓基化合物半导体的制造方法
公开(公告)号：US06984536B2
公开(公告)日：2006-01-10
申请号：US10052347
申请日：2002-01-23
申请人： Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
发明人： Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
IPC分类号： H01L21/20
CPC分类号： H01L33/32 , H01L33/007 , H01L33/025
摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.
摘要翻译：本文公开了（1）使用氮化镓化合物半导体（Al x Ga 1-x N）的发光半导体器件，其中n层n 型氮化镓化合物半导体（Al x Ga 1-x N）是包括低载流子浓度的n层和n < 高载流子浓度的+层，前者与绝缘氮化镓化合物半导体（Al x Ga 1-x N）的i层相邻， ; （2）具有上述类似结构的发光半导体器件，其中i层是双层结构，包括相对较低的含有p型杂质的低杂质浓度的i L层低浓度和高浓度的含有p型杂质的高杂质浓度的i H +层，前者与n层相邻; （3）具有上述两个特征的发光半导体器件和（4）制造n型氮化镓系化合物半导体层的方法（Al x Ga Ga 1-x N），通过气相外延从有机金属化合物具有受控的导电性，通过以可控混合比将含硅气体和其它原料气体一起供给到一起。

4. 发明授权

US06881651B2 Methods and devices using group III nitride compound semiconductor 有权
标题翻译：使用III族氮化物化合物半导体的方法和装置
公开(公告)号：US06881651B2
公开(公告)日：2005-04-19
申请号：US10382647
申请日：2003-03-07
申请人： Norikatsu Koide , Hisaki Kato
发明人： Norikatsu Koide , Hisaki Kato
IPC分类号： C30B25/02 , C30B29/40 , H01L21/20 , H01L21/205 , H01L33/16 , H01L33/32 , H01L33/34 , H01S5/00 , H01S5/323
CPC分类号： C30B25/02 , C30B29/403 , C30B29/406 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02647 , Y10S117/902 , Y10S438/932
摘要： A layer comprising silicon oxide (SiO2) is formed on (111) plane of a silicon (Si) substrate in a striped pattern which is longer in the [1-10] axis direction perpendicular to the [110] axis direction. Then a group III nitride compound semiconductor represented by a general formula AlxGayIn1−x−yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1) is laminated thereon. The group III nitride compound semiconductor represented by a general formula AlxGayIn1−x−yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1) grows epitaxially on the substrate-exposed regions B which are not covered by the SiO2 layer, and grows epitaxially on the SiO2 layer in lateral direction from the regions B. Consequently, a group III nitride compound semiconductor having no dislocations can be obtained.
摘要翻译：在硅（Si）衬底的（111）面上以垂直于[...]的[1-10]轴方向上较长的条纹图案形成包含氧化硅（SiO 2） 110]轴方向。然后，由通式Al 1-xy N（0 <= x <= 1）表示的III族氮化物化合物半导体，0 <= y <= 1，0 <= x + y <= 1）。由通式Al 1-xy N表示的III族氮化物化合物半导体（0≤x≤1， 0 <= y <= 1，0 <= x + y <= 1）在未被SiO 2层覆盖的衬底暴露区域B上外延生长，并且在SiO 在区域B的横向方向上形成第二层。因此，可以获得没有位错的III族氮化物化合物半导体。

5. 发明授权

US06794629B2 Photomultiplier 有权
公开(公告)号：US06794629B2
公开(公告)日：2004-09-21
申请号：US10468826
申请日：2003-08-25
申请人： Hisaki Kato , Hideto Kawai
发明人： Hisaki Kato , Hideto Kawai
IPC分类号： H01J4014
CPC分类号： H01J43/28 , H01J43/045 , H01J43/06 , H01J43/18 , H01J43/22
摘要： A photomultiplier eliminates the reflection of light off of focusing pieces in a focusing electrode and prevents the photocathode from emitting useless electrons in response to such reflected light by including an oxide film formed over the surface of each focusing piece. The oxide film is also formed on the surface of secondary electron emission pieces in the first and second stage dynodes to eliminate the reflection of light off of the secondary electron emission pieces and to prevent the photocathode from emitting useless electrons in response to such reflected light. Further, a light-absorbing glass partitioning part is provided in a light-receiving faceplate to suppress crosstalk between channels.

6. 发明授权

US06423984B1 Light-emitting semiconductor device using gallium nitride compound semiconductor 有权
标题翻译：使用氮化镓化合物半导体的发光半导体装置
公开(公告)号：US06423984B1
公开(公告)日：2002-07-23
申请号：US09394527
申请日：1999-09-10
申请人： Hisaki Kato , Hiroshi Watanabe , Norikatsu Koide , Shinya Asami
发明人： Hisaki Kato , Hiroshi Watanabe , Norikatsu Koide , Shinya Asami
IPC分类号： H01L2978
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32
摘要： A barrier layer made of AlxGa1−xN (0
摘要翻译：在使用具有多量子阱（MQW）结构的氮化镓化合物的发光半导体器件中形成由Al x Ga 1-x N（0

7. 发明授权

US5886341A Photodetection tube with a slidably adapted cathode substrate 失效
标题翻译：具有可滑动适应的阴极衬底的光检测管
公开(公告)号：US5886341A
公开(公告)日：1999-03-23
申请号：US902329
申请日：1997-07-29
申请人： Naohisa Tateishi , Hisaki Kato , Katurou Hikita
发明人： Naohisa Tateishi , Hisaki Kato , Katurou Hikita
IPC分类号： H01J9/44 , H01J7/24 , H01J9/18 , H01J40/02 , H01J43/08 , H01J43/28 , H01J40/14
CPC分类号： H01J7/24 , H01J43/08
摘要： A photomultiplier includes a cathode supporting member, arranged in a tube and comprised of a conductive material, for holding a photocathode, and a holding mechanism, comprised of a heat conductive material, for biasing the cathode holding member to hold it. The holding mechanism is thermally connected to a cooler.
摘要翻译：光电倍增管包括阴极支撑构件，其布置在管中并且由用于保持光电阴极的导电材料构成，以及由导热材料构成的保持机构，用于使阴极保持构件偏压保持。保持机构与冷却器热连接。

8. 发明授权

US5719390A Photodetection tube with a lid and cathode holding member in thermal contact with a cooler 失效
标题翻译：具有与冷却器热接触的盖和阴极保持构件的光电检测管
公开(公告)号：US5719390A
公开(公告)日：1998-02-17
申请号：US496647
申请日：1995-06-29
申请人： Naohisa Tateishi , Hisaki Kato , Katurou Hikita
发明人： Naohisa Tateishi , Hisaki Kato , Katurou Hikita
IPC分类号： H01J9/44 , H01J7/24 , H01J9/18 , H01J40/02 , H01J43/08 , H01J43/28 , H01J40/14
CPC分类号： H01J7/24 , H01J43/08
摘要： A photomultiplier includes a cathode supporting member, arranged in a tube and comprised of a conductive material, for holding a photocathode, and a holding mechanism, comprised of a heat conductive material, for biasing the cathode holding member to hold it. The holding mechanism is thermally connected to a cooler.
摘要翻译：光电倍增管包括阴极支撑构件，其布置在管中并且由用于保持光电阴极的导电材料构成，以及由导热材料构成的保持机构，用于使阴极保持构件偏压保持。保持机构与冷却器热连接。

9. 发明授权

US5122845A Substrate for growing gallium nitride compound-semiconductor device and light emitting diode 失效
标题翻译：用于生长氮化镓化合物 - 半导体器件和发光二极管的衬底
公开(公告)号：US5122845A
公开(公告)日：1992-06-16
申请号：US484213
申请日：1990-02-26
申请人： Katsuhide Manabe , Hisaki Kato , Isamu Akasaki , Kazumasa Hiramatsu , Hiroshi Amano
发明人： Katsuhide Manabe , Hisaki Kato , Isamu Akasaki , Kazumasa Hiramatsu , Hiroshi Amano
IPC分类号： C30B25/02 , H01L21/20 , H01L21/205 , H01L21/86 , H01L33/12 , H01L33/16 , H01L33/32 , H01L33/40
CPC分类号： H01L33/32 , C30B25/02 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/12 , H01L33/16 , H01L33/40
摘要： A substrate for producing a gallium nitride compound-semiconductor (Al.su Ga.sub.1-x N; X=0 inclusive) device in vapor phase on a sapphire substrate using gaseous organometallic compound, and a also blue light emitting diode produced by using the substrate. The buffer layer comprising aluminium nitride (AlN) and having a crystal structure where microcrystal or polycrystal is mixed in amorphous state, is formed on the sapphire substrate. The buffer layer is formed at a growth temperature of 380.degree. to 800.degree. C. to have a thickness of 100 to 500 .ANG.. Further, on the buffer layer is formed the layer of gallium nitride compound-semiconductor (Al.sub.x Ga.sub.1-x N; X=0 inclusive). The layer of gallium nitride compound-semiconductor (Al.sub.x Ga.sub.1-x N; X=0 inclusive) comprising at least two layers having different conductive types and being sequentially layered on the buffer layer, functions as a light emitting layer. The existence of the buffer layer having the aforementioned structure greatly contributes on the improved high-quality single crystal of the gallium nitride compound-semiconductor. On the other hand, the blue light emitting property is also improved due to the increase of the quality.
摘要翻译：用于使用气态有机金属化合物在蓝宝石衬底上制造氮化镓化合物半导体（Al x Ga 1-x N; X = 0）的基板，以及通过使用该衬底制造的蓝色发光二极管。在蓝宝石衬底上形成包含氮化铝（AlN）并且具有以非晶态混合微晶或多晶体的晶体结构的缓冲层。缓冲层在380〜800℃的生长温度下形成，厚度为100〜500。此外，在缓冲层上形成氮化镓化合物半导体层（Al x Ga 1-x N; X = 0）。包含至少两层具有不同导电类型并依次层叠在缓冲层上的氮化镓化合物半导体层（Al x Ga 1-x N; X = 0）包括层，用作发光层。具有上述结构的缓冲层的存在大大有助于改进的氮化镓化合物半导体的高质量单晶。另一方面，由于质量的提高，蓝色发光特性也得到改善。

10. 发明授权

US09170052B2 Lower vessel of RH degasser 有权
标题翻译： RH脱气机的下部容器
公开(公告)号：US09170052B2
公开(公告)日：2015-10-27
申请号：US13824733
申请日：2011-10-07
申请人： Yoshiyuki Nakamura , Hisaki Kato , Shinya Yoshimitsu , Hiroharu Ido , Hiroshi Nomura
发明人： Yoshiyuki Nakamura , Hisaki Kato , Shinya Yoshimitsu , Hiroharu Ido , Hiroshi Nomura
IPC分类号： C21C7/10 , F27D1/04 , C21C1/06
CPC分类号： F27D1/04 , C21C1/06 , C21C7/10 , F27D1/045
摘要： A bottom part refractory includes a center part refractory, an arrangement refractory which is arranged contiguously with the center part refractory, and a connection refractory which is arranged at a position where at least a portion of the connection refractory overlaps with a vertically downward projection view of a side wall refractory. The connection refractory which is contiguously arranged with the arrangement refractory is constituted of two or more force transmission refractories arranged in the direction toward the arrangement refractory from the side-wall refractory. Opposedly facing surfaces between the force transmission refractories at least at a position among the force transmission refractories are inclined such that upper portions of the opposedly facing surfaces are positioned on a more inner side of a bottom portion than lower portions of the opposedly facing surfaces are positioned.
摘要翻译：底部耐火材料包括中心部分耐火材料，与中心部件耐火材料连续布置的配置耐火材料，以及连接耐火材料，其设置在连接耐火材料的至少一部分与垂直向下投影的重叠部分侧壁耐火材料。与排列耐火材料连续布置的连接耐火材料由从侧壁耐火材料朝向排列耐火材料的方向布置的两个或更多个力传递耐火材料构成。至少在力传递耐火材料之间的位置处的力传递耐火材料之间的面对面的表面倾斜，使得相对面的表面的上部位于底部的比内侧相对的表面的下部更靠内侧。

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