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    • 2. 发明授权
    • Method for manufacturing a gallium nitride group compound semiconductor
    • 氮化镓基化合物半导体的制造方法
    • US06984536B2
    • 2006-01-10
    • US10052347
    • 2002-01-23
    • Katsuhide ManabeAkira MabuchiHisaki KatoMichinari SassaNorikatsu KoideShiro YamazakiMasafumi HashimotoIsamu Akasaki
    • Katsuhide ManabeAkira MabuchiHisaki KatoMichinari SassaNorikatsu KoideShiro YamazakiMasafumi HashimotoIsamu Akasaki
    • H01L21/20
    • H01L33/32H01L33/007H01L33/025
    • Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.
    • 本文公开了(1)使用氮化镓化合物半导体(Al x Ga 1-x N)的发光半导体器件,其中n层n 型氮化镓化合物半导体(Al x Ga 1-x N)是包括低载流子浓度的n层和n < 高载流子浓度的+层,前者与绝缘氮化镓化合物半导体(Al x Ga 1-x N)的i层相邻, ; (2)具有上述类似结构的发光半导体器件,其中i层是双层结构,包括相对较低的含有p型杂质的低杂质浓度的i L层 低浓度和高浓度的含有p型杂质的高杂质浓度的i H +层,前者与n层相邻; (3)具有上述两个特征的发光半导体器件和(4)制造n型氮化镓系化合物半导体层的方法(Al x Ga Ga 1-x N),通过气相外延从有机金属化合物具有受控的导电性,通过以可控混合比将含硅气体和其它原料气体一起供给到一起。
    • 3. 发明授权
    • Gallium nitride group compound semiconductor
    • 氮化镓族化合物半导体
    • US06472690B1
    • 2002-10-29
    • US09677789
    • 2000-10-02
    • Katsuhide ManabeAkira MabuchiHisaki KatoMichinari SassaNorikatsu KoideShiro YamazakiMasafumi HashimotoIsamu Akasaki
    • Katsuhide ManabeAkira MabuchiHisaki KatoMichinari SassaNorikatsu KoideShiro YamazakiMasafumi HashimotoIsamu Akasaki
    • H01L3300
    • H01L33/32H01L33/007H01L33/025
    • Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.
    • 这里公开的是(1)使用其中n型氮化镓化合物半导体(Al x Ga 1-x N)的n层是双层结构的氮化镓化合物半导体(Al x Ga 1-x N)的发光半导体器件,包括 低载流子浓度的n层和高载流子浓度的n +层,前者与绝缘的氮化镓化合物半导体(Al x Ga 1-x N)的i层相邻; (2)具有上述类似结构的发光半导体器件,其中i层是双层结构,其包括含有较低浓度的p型杂质的低杂质浓度的iL层和iH层 含有较高浓度的p型杂质的高杂质浓度,前者与n层相邻; (3)具有上述特征的发光半导体器件和(4)由有机金属化合物具有受控导电性的n型氮化镓系化合物半导体(Al x Ga 1-x N)的层的制造方法, 通过以受控的混合比将含硅气体和其它原料气体一起供给到气相外延。
    • 5. 发明授权
    • Method for manufacturing a gallium nitride group compound semiconductor
    • 氮化镓基化合物半导体的制造方法
    • US06830992B1
    • 2004-12-14
    • US09677781
    • 2000-10-02
    • Katsuhide ManabeAkira MabuchiHisaki KatoMichinari SassaNorikatsu KoideShiro YamazakiMasafumi HashimotoIsamu Akasaki
    • Katsuhide ManabeAkira MabuchiHisaki KatoMichinari SassaNorikatsu KoideShiro YamazakiMasafumi HashimotoIsamu Akasaki
    • H01L2120
    • H01L33/32H01L33/007H01L33/025
    • Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.
    • 这里公开的是(1)使用其中n型氮化镓化合物半导体(Al x Ga 1-x N)的n层是双层结构的氮化镓化合物半导体(Al x Ga 1-x N)的发光半导体器件,包括 低载流子浓度的n层和高载流子浓度的n +层,前者与绝缘氮化镓化合物半导体(Al x Ga 1-x N)的i层相邻; (2)具有上述类似结构的发光半导体器件,其中i层是双层结构,其包括含有较低浓度的p型杂质的低杂质浓度的iL层和iH层 含有较高浓度的p型杂质的高杂质浓度,前者与n层相邻; (3)具有上述特征的发光半导体器件和(4)由有机金属化合物具有受控导电性的n型氮化镓系化合物半导体(Al x Ga 1-x N)的层的制造方法, 通过以受控的混合比将含硅气体和其它原料气体一起供给到气相外延。
    • 6. 发明授权
    • Method for producing a light-emitting semiconductor device
    • 发光半导体器件的制造方法
    • US06607595B1
    • 2003-08-19
    • US09677788
    • 2000-10-02
    • Katsuhide ManabeAkira MabuchiHisaki KatoMichinari SassaNorikatsu KoideShiro YamazakiMasafumi HasimotoIsamu Akasaki
    • Katsuhide ManabeAkira MabuchiHisaki KatoMichinari SassaNorikatsu KoideShiro YamazakiMasafumi HasimotoIsamu Akasaki
    • C30B2514
    • H01L33/32H01L33/007H01L33/025
    • Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlXGa1-xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1-XN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1-xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1-xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.
    • 本文公开了(1)一种使用其中n型氮化镓化合物半导体(Al x Ga 1-X N)的n层是双层结构的氮化镓化合物半导体(Al x Ga 1-x N)的发光半导体器件,包括 低载流子浓度的n层和高载流子浓度的n +层,前者与绝缘的氮化镓化合物半导体(Al x Ga 1-x N)的i层相邻; (2)具有上述类似结构的发光半导体器件,其中i层是双层结构,其包括含有较低浓度的p型杂质的低杂质浓度的iL层和iH层 含有较高浓度的p型杂质的高杂质浓度,前者与n层相邻; (3)具有上述特征的发光半导体器件和(4)由有机金属化合物具有受控导电性的n型氮化镓系化合物半导体(Al x Ga 1-x N)的层的制造方法, 通过以受控的混合比将含硅气体和其它原料气体一起供给到气相外延。
    • 7. 发明授权
    • Light emitting device
    • 发光装置
    • US06472689B1
    • 2002-10-29
    • US09677787
    • 2000-10-02
    • Katsuhide ManabeAkira MabuchiHisaki KatoMichinari SassaNorikatsu KoideShiro YamazakiMasafumi HashimotoIsamu Akasaki
    • Katsuhide ManabeAkira MabuchiHisaki KatoMichinari SassaNorikatsu KoideShiro YamazakiMasafumi HashimotoIsamu Akasaki
    • H01L3300
    • H01L33/32H01L33/007H01L33/025
    • Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.
    • 这里公开的是(1)使用其中n型氮化镓化合物半导体(Al x Ga 1-x N)的n层是双层结构的氮化镓化合物半导体(Al x Ga 1-x N)的发光半导体器件,包括 低载流子浓度的n层和高载流子浓度的n +层,前者与绝缘的氮化镓化合物半导体(Al x Ga 1-x N)的i层相邻; (2)具有上述类似结构的发光半导体器件,其中i层是双层结构,其包括含有较低浓度的p型杂质的低杂质浓度的iL层和iH层 含有较高浓度的p型杂质的高杂质浓度,前者与n层相邻; (3)具有上述特征的发光半导体器件和(4)由有机金属化合物具有受控导电性的n型氮化镓系化合物半导体(Al x Ga 1-x N)的层的制造方法, 通过以受控的混合比将含硅气体和其它原料气体一起供给到气相外延。