会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Sapphireless group III nitride semiconductor and method for making same
    • 无蓝宝石III族氮化物半导体及其制造方法
    • US5620557A
    • 1997-04-15
    • US494846
    • 1995-06-26
    • Katsuhide ManabeMasayoshi KoikeHisaki KatoNorikatsu KoideIsamu AkasakiHiroshi Amano
    • Katsuhide ManabeMasayoshi KoikeHisaki KatoNorikatsu KoideIsamu AkasakiHiroshi Amano
    • C30B25/02H01L33/32H01L21/00
    • C30B25/02C30B29/403C30B29/406H01L33/007H01L33/0075Y10S117/915
    • A method of manufacturing two sapphireless layers (3a, 3b) at one time made of Group III nitride compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0, and a LED (10) utilizing one of the semiconductor layers (3a, 3b) as a substrate (3) includes the steps of forming two zinc oxide (ZnO) intermediate layers (2a, 2b) on each side of a sapphire substrate (1), forming two Group III nitride compound semiconductor layers (3a, 3b) satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0, each laminated on each of the intermediate ZnO layers (2a, 2b), and separating the intermediate ZnO layers (2a, 2b) from the sapphire substrate (1) by etching with an etching liquid only for the ZnO layers (2a, 2b). At least one of the so-obtained Group III nitride compound layers is provided with n and p MOVPE layers (4, 5) formed thereon with electrodes (6, 7) on opposite sides to form an LED emitting in the 450 nm region and having a low device resistance.
    • 一次由满足公式Al x Ga y In 1-x-y N的III族氮化物化合物半导体制造两个蓝宝石层(3a,3b)的方法,包括x = 0,y = 0和x = y = 0,以及 利用半导体层(3a,3b)之一作为基板(3)的LED(10)包括在蓝宝石基板(1)的每一侧上形成两个氧化锌(ZnO)中间层(2a,2b)的步骤, 形成满足式Al x Ga y In 1-x-y N的两个III族氮化物化合物半导体层(3a,3b),包括x = 0,y = 0和x = y = 0,各层叠在每个中间ZnO层 ,2b),并且通过仅用于ZnO层(2a,2b)的蚀刻液蚀刻从中分离出中间ZnO层(2a,2b)和蓝宝石衬底(1)。 如此获得的III族氮化物化合物层中的至少一个设置有在其上形成有电极(6,7)的相对侧上的n和p个MOVPE层(4,5),以形成在450nm区域中发射的LED,并且具有 器件电阻低。
    • 3. 发明授权
    • Semiconductor device having group III nitride compound and enabling
control of emission color, and flat display comprising such device
    • 具有III族氮化物化合物并且能够控制发光颜色的半导体器件,以及包括这种器件的平面显示器
    • US5650641A
    • 1997-07-22
    • US522110
    • 1995-08-31
    • Michinari SassaMasayoshi KoikeKatsuhide ManabeNorikatsu KoideHisaki KatoNaoki ShibataMakoto AsaiShinya Asami
    • Michinari SassaMasayoshi KoikeKatsuhide ManabeNorikatsu KoideHisaki KatoNaoki ShibataMakoto AsaiShinya Asami
    • H01L33/02H01L33/32H01L33/00
    • H01L33/325H01L33/025
    • A light-emitting semiconductor device (100) suitable for use in multi-color flat panel displays includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n.sup.+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Al.sub.x2 Ga.sub.1 -x.sub.2).sub.y2 In.sub.1-2 N n.sup.+ -layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped p-type (Al.sub.x1 Ga.sub.1-x1).sub.y1 In.sub.1-y1 N emission layer (5), and a Mg-doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N p-layer (6). The AlN layer (2) has a 500 .ANG. thickness. The GaN n.sup.+ -layer (3) is about a 2.0 .mu.m thick and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The n.sup.+ -layer (4) is about a 2.0 .mu.m in thickness and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The emission layer (5) is about 0.5 .mu.m thick. The p-layer 6 is about 1.0 .mu.m thick and has a 2.times.10.sup.17 /cm.sup.3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n.sup.+ -layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). Green light emission is obtained by this constitution. Further, only doping Zn of 5.times.10.sup.19 /cm.sup.3 into the emission layer (5) enables red light emission.
    • 适用于多色平板显示器的发光半导体器件(100)包括蓝宝石衬底(1),AlN缓冲层(2),掺杂硅(Si)的GaN n +层(3) 载流子(n型)浓度,高载流子(n型)浓度的Si掺杂(Alx2Ga1-x2)y2In1-2Nn +层(4),锌(Zn)和掺杂Si的p型(Al x Ga 1 -x1)y1In1-y1N发射层(5)和Mg掺杂(Alx2Ga1-x2)y2In1-y2N p层(6)。 AlN层(2)具有500厚度。 GaN n +层(3)的厚度约为2.0μm,电子浓度为2×10 18 / cm 3。 n +层(4)的厚度约为2.0μm,电子浓度为2×10 18 / cm 3。 发射层(5)厚约0.5μm。 p层6的厚度约为1.0μm,空穴浓度为2×10 17 / cm 3。 镍电极(7,8)分别连接到p层(6)和n +层(4)。 一个凹槽(9)使电极(7,8)电绝缘。 通过这种结构获得绿色发光。 此外,仅向发射层(5)掺杂5×10 19 / cm 3的Zn使得能够发红光。
    • 8. 发明授权
    • Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity
    • 具有改善的发光强度的发光铝镓铟氮化物半导体器件
    • US07001790B2
    • 2006-02-21
    • US09783035
    • 2001-02-15
    • Katsuhide ManabeHisaki KatoMichinari SassaShiro YamazakiMakoto AsaiNaoki ShibataMasayoshi Koike
    • Katsuhide ManabeHisaki KatoMichinari SassaShiro YamazakiMakoto AsaiNaoki ShibataMasayoshi Koike
    • H01L21/00
    • H01L33/32H01L33/0025H01L33/007H01L33/325H01L33/38H01L33/382H01L33/385H01L33/40
    • A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1-x3)y3In1-y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1-x2)y2In1-y2N emission layer (5), and a Mg-doped (Alx1Ga1-x1)y1In1-y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 μm thickness. The p-layer 6 has about a 1.0 μm thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.
    • 发光半导体器件(10)连续地包括蓝宝石衬底(1),AlN缓冲层(2),高载体的硅(Si)掺杂GaN n + +层(3) (n型)浓度,Si掺杂(Al x3 Ga 1-x 3)y 3在1-y 3中, 具有高载流子(n型)浓度的氮(Zn)和Si掺杂(Al 2 x 2 Ga 2) 1-x2 Y2在1-y2 N发射层(5)中,以及Mg掺杂(Al x1 Ga) 在1-y1 N p层(6)中。 AlN层(2)的厚度为500埃。 GaN n + +(3)具有约2.0μm厚度和2×10 18 / cm 3电子浓度。 n + +层(4)具有约2.0μm厚度和2×10 18 / cm 3电子浓度。 发射层(5)的厚度约为0.5μm。 p层6具有约1.0μm厚度和2×10 17 / cm 3孔浓度。 镍电极(7,8)分别连接到p层(6)和n + +层(4)。 一个凹槽(9)使电极(7,8)电绝缘。 选择各层(4,5,6)中的Al,Ga和In的组成比以满足n +层(3)中的GaN的晶格常数。 LED(10)被设计为提高发光强度并获得更纯的蓝色。
    • 9. 发明申请
    • Light-emitting semiconductor device using group III nitrogen compound
    • 使用III族氮化合物的发光半导体器件
    • US20080173880A1
    • 2008-07-24
    • US12003173
    • 2007-12-20
    • Katsuhide ManabeHisaki KatoMichinari SassaShiro YamazakiMakoto AsaiNaoki ShibataMasayoshi Koike
    • Katsuhide ManabeHisaki KatoMichinari SassaShiro YamazakiMakoto AsaiNaoki ShibataMasayoshi Koike
    • H01L33/00H01L21/00
    • H01L33/32H01L33/0025H01L33/007H01L33/325H01L33/38H01L33/382H01L33/385H01L33/40
    • A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1-x3)y3In1-y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1-x2)y2In1-y2N emission layer (5), and a Mg-doped (Alx1Ga1-x1)y1In1-y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 μm thickness. The p-layer 6 has about a 1.0 μm thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.
    • 发光半导体器件(10)连续地包括蓝宝石衬底(1),AlN缓冲层(2),高载体的硅(Si)掺杂GaN n + +层(3) (n型)浓度,Si掺杂(Al x3 Ga 1-x 3)y 3在1-y 3中, 具有高载流子(n型)浓度的氮(Zn)和Si掺杂(Al 2 x 2 Ga 2) 1-x2 Y2在1-y2 N发射层(5)中,以及Mg掺杂(Al x1 Ga) 在1-y1 N p层(6)中。 AlN层(2)的厚度为500埃。 GaN n + +(3)具有约2.0μm厚度和2×10 18 / cm 3电子浓度。 n + +层(4)具有约2.0μm厚度和2×10 18 / cm 3电子浓度。 发射层(5)的厚度约为0.5μm。 p层6具有约1.0μm厚度和2×10 17 / cm 3孔浓度。 镍电极(7,8)分别连接到p层(6)和n + +层(4)。 一个凹槽(9)使电极(7,8)电绝缘。 选择各层(4,5,6)中的Al,Ga和In的组成比以满足n +层(3)中的GaN的晶格常数。 LED(10)被设计为提高发光强度并获得更纯的蓝色。