专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07855385B2 SiC crystal and semiconductor device 有权
标题翻译： SiC晶体和半导体器件
公开(公告)号：US07855385B2
公开(公告)日：2010-12-21
申请号：US12152016
申请日：2008-05-12
申请人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya , Masahiro Yoshimoto , Hiroyuki Kinoshita
发明人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya , Masahiro Yoshimoto , Hiroyuki Kinoshita
IPC分类号： H01L31/0312
CPC分类号： B23K35/262 , C22C13/00 , H01B1/026
摘要： The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×1017 cm−3; donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities. The present invention discloses a semiconductor device, comprising: a SiC fluorescent layer having acceptor impurities that are in a concentration greater than 5×1017 cm−3 and donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities; and a light emission layer that is layered on the SiC fluorescent layer and emits excitation light for the SiC fluorescent layer.
摘要翻译：本发明公开了一种SiC晶体，其包含：浓度大于5×1017cm-3的受主杂质; 供体杂质浓度小于1×1019 cm-3，大于受主杂质的浓度。本发明公开了一种半导体器件，包括：具有浓度大于5×1017cm-3的受主杂质的SiC荧光层和浓度小于1×1019 cm -3并且大于受体杂质浓度; 以及层叠在SiC荧光层上并发射用于SiC荧光层的激发光的发光层。

2. 发明申请

US20080277670A1 SiC crystal and semiconductor device 有权
标题翻译： SiC晶体和半导体器件
公开(公告)号：US20080277670A1
公开(公告)日：2008-11-13
申请号：US12152016
申请日：2008-05-12
申请人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya , Masahiro Yoshimoto , Hiroyuki Kinoshita
发明人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya , Masahiro Yoshimoto , Hiroyuki Kinoshita
IPC分类号： H01L33/00
CPC分类号： B23K35/262 , C22C13/00 , H01B1/026
摘要： The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×1017 cm−3; donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities. The present invention discloses a semiconductor device, comprising: a SiC fluorescent layer having acceptor impurities that are in a concentration greater than 5×1017 cm−3 and donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities; and a light emission layer that is layered on the SiC fluorescent layer and emits excitation light for the SiC fluorescent layer.
摘要翻译：本发明公开了一种SiC晶体，其包括：浓度大于5×10 17 cm -3的受主杂质; 供体杂质浓度小于1×10 9 -3 -3，且大于受体杂质的浓度。本发明公开了一种半导体器件，包括：具有浓度大于5×10 17 cm -3的受主杂质的SiC荧光层和位于浓度小于1×10 9 cm -3以上且大于受主杂质的浓度; 以及层叠在SiC荧光层上并发射用于SiC荧光层的激发光的发光层。

3. 发明授权

US11424322B2 Semiconductor device and method of manufacturing the same 有权
公开(公告)号：US11424322B2
公开(公告)日：2022-08-23
申请号：US16784907
申请日：2020-02-07
申请人： Tatsuji Nagaoka , Hiroyuki Nishinaka , Masahiro Yoshimoto
发明人： Tatsuji Nagaoka , Hiroyuki Nishinaka , Masahiro Yoshimoto
IPC分类号： H01L29/06 , H01L29/24 , H01L21/784 , H01L29/872 , H01L29/861
摘要： A semiconductor device may include: a gallium oxide substrate including a first side surface constituted of a (100) plane, a second side surface constituted of a plane other than the (100) plane, and an upper surface; and an electrode in contact with the upper surface, in which the gallium oxide substrate may include: a diode interface constituted of a pn interface or a Schottky interface; and an n-type drift region connected to the electrode via the diode interface, and a shortest distance between the first side surface and the diode interface is shorter than a shortest distance between the second side surface and the diode interface.

4. 发明授权

US11270882B2 Film formation apparatus configured to supply mist of a solution to surface of a substrate and method of manufacturing semiconductor device using the film formation apparatus 有权
公开(公告)号：US11270882B2
公开(公告)日：2022-03-08
申请号：US16741060
申请日：2020-01-13
申请人： Tatsuji Nagaoka , Hiroyuki Nishinaka , Daisuke Tahara , Masahiro Yoshimoto
发明人： Tatsuji Nagaoka , Hiroyuki Nishinaka , Daisuke Tahara , Masahiro Yoshimoto
IPC分类号： H01L21/02 , B05B17/06
摘要： A film formation apparatus is configured to supply mist of a solution to a surface of a substrate so as to epitaxially grow a film on the surface of the substrate. The film formation apparatus may be provided with: a furnace configured to house and heat the substrate; a reservoir configured to store the solution; a heater configured to heat the solution in the reservoir; an ultrasonic transducer configured to apply ultrasound to the solution in the reservoir so as to generate the mist of the solution in the reservoir; and a mist supply path configured to carry the mist from the reservoir to the furnace.

5. 发明授权

US07627207B2 Dispersion compensating method and dispersion compensating apparatus 失效
标题翻译：色散补偿方法和色散补偿装置
公开(公告)号：US07627207B2
公开(公告)日：2009-12-01
申请号：US11689946
申请日：2007-03-22
申请人： Masahiro Yoshimoto , Futoshi Izumi , Makoto Takakuwa
发明人： Masahiro Yoshimoto , Futoshi Izumi , Makoto Takakuwa
IPC分类号： G02B6/26 , G02B6/42 , H04B10/12
CPC分类号： H04B10/2935 , H04B10/25133 , H04B10/25253 , H04J14/0221
摘要： A dispersion compensating method for carrying out automatic level control with the use of target output power and an ASE correction value corresponding to the number of wavelengths to multiplex and making output power of a wavelength multiplexed signal constant, comprising the steps of: switching into automatic gain control in which the output power of the wavelength multiplexed signal is made constant, to carry out increase/decrease of the wavelengths to multiplex; varying a dispersion compensating amount based on the increase/decrease of the wavelengths by the automatic gain control; calculating an ASE variation amount due to the change in the dispersion compensating amount; and reflecting the ASE variation amount on the ASE correction value and switching into the automatic level control.
摘要翻译：一种色散补偿方法，用于通过使用目标输出功率进行自动电平控制，并且对应于波长数量的ASE校正值进行多路复用并使波长多路复用信号的输出功率恒定，包括以下步骤：切换到自动增益使波长多路复用信号的输出功率恒定的控制，以进行波长的增加/减少以进行多路复用; 基于通过自动增益控制的波长的增加/减少来改变色散补偿量; 计算由于色散补偿量的变化引起的ASE变化量; 并将ASE变化量反映在ASE校正值上并切换到自动电平控制。

6. 发明申请

US20050213986A1 Dispersion compensating method and dispersion compensating apparatus 有权
标题翻译：色散补偿方法和色散补偿装置
公开(公告)号：US20050213986A1
公开(公告)日：2005-09-29
申请号：US10885732
申请日：2004-07-08
申请人： Masahiro Yoshimoto , Makoto Takakuwa , Futoshi Izumi , Takahiro Hosokawa
发明人： Masahiro Yoshimoto , Makoto Takakuwa , Futoshi Izumi , Takahiro Hosokawa
IPC分类号： H04B10/2507 , G02B6/34 , H04B10/07 , H04B10/2519 , H04B10/2525 , H04J14/00 , H04J14/02 , H04B10/12
CPC分类号： H04B10/25133 , G02B6/29394
摘要： A dispersion compensating method for compensating wavelength dispersion occurring in an optical transmission line, includes the steps of: a) performing dispersion compensation by causing an optical signal, supplied from the transmission line, to pass through a variable dispersion compensator; and b) controlling a dispersion compensating amount in the variable dispersion compensator according to code error information corresponding to a type of code in a received data signal obtained from receiving the optical signal having undergone the dispersion compensation.
摘要翻译：一种用于补偿光传输线中发生的波长色散的色散补偿方法，包括以下步骤：a）通过使从传输线提供的光信号通过可变色散补偿器来执行色散补偿; 以及b）根据从接收已经进行色散补偿的光信号获得的接收数据信号中的代码类型对应的代码误差信息来控制可变色散补偿器中的色散补偿量。

7. 发明授权

US4435202A Plant growth regulator 失效
标题翻译：植物生长调节剂
公开(公告)号：US4435202A
公开(公告)日：1984-03-06
申请号：US363023
申请日：1982-03-29
申请人： Masuo Koizumi , Norio Shirakawa , Hiromi Tomioka , Masaki Takeuchi , Masanori Okada , Masahiro Yoshimoto , Yasushi Murakami , Yoshitaka Iwane
发明人： Masuo Koizumi , Norio Shirakawa , Hiromi Tomioka , Masaki Takeuchi , Masanori Okada , Masahiro Yoshimoto , Yasushi Murakami , Yoshitaka Iwane
IPC分类号： A01N43/40 , C07D213/81
CPC分类号： C07D213/81 , A01N43/40
摘要： A plant growth regulator containing as an active ingredient one or more compounds represented by the formula ##STR1## wherein R, X, Y and Z are defined in the specification is disclosed. The plant growth regulator is effective for a wide variety of plants, particularly for grassy plants. In addition to such activity, the regulator of this invention acts on plants to thicken the foliage and to aid health growth without causing substantial phytotoxicity.
摘要翻译：公开了包含作为活性成分的一种或多种由式“IMAGE”表示的化合物的植物生长调节剂，其中R，X，Y和Z在说明书中定义。植物生长调节剂对于各种各样的植物，特别是对于草本植物而言是有效的。除了这种活动之外，本发明的调节剂还起作用以增加叶子的厚度并且帮助健康生长而不会引起大量的植物毒性。

8. 发明授权

US07450856B2 Dispersion compensating method and dispersion compensating apparatus 有权
标题翻译：色散补偿方法和色散补偿装置
公开(公告)号：US07450856B2
公开(公告)日：2008-11-11
申请号：US10885732
申请日：2004-07-08
申请人： Masahiro Yoshimoto , Makoto Takakuwa , Futoshi Izumi , Takahiro Hosokawa
发明人： Masahiro Yoshimoto , Makoto Takakuwa , Futoshi Izumi , Takahiro Hosokawa
IPC分类号： H04B10/00 , H04B10/12 , H04B10/06
CPC分类号： H04B10/25133 , G02B6/29394
摘要： A dispersion compensating method for compensating wavelength dispersion occurring in an optical transmission line, includes the steps of: a) performing dispersion compensation by causing an optical signal, supplied from the transmission line, to pass through a variable dispersion compensator; and b) controlling a dispersion compensating amount in the variable dispersion compensator according to code error information corresponding to a type of code in a received data signal obtained from receiving the optical signal having undergone the dispersion compensation.
摘要翻译：一种用于补偿光传输线中发生的波长色散的色散补偿方法，包括以下步骤：a）通过使从传输线提供的光信号通过可变色散补偿器来执行色散补偿; 以及b）根据从接收已经进行色散补偿的光信号获得的接收数据信号中的代码类型对应的代码误差信息来控制可变色散补偿器中的色散补偿量。

9. 发明申请

US20070036549A1 Optical transmission apparatus 有权
标题翻译：光传输装置
公开(公告)号：US20070036549A1
公开(公告)日：2007-02-15
申请号：US11496499
申请日：2006-08-01
申请人： Makoto Takakuwa , Futoshi Izumi , Masahiro Yoshimoto , Takahiro Hosokawa
发明人： Makoto Takakuwa , Futoshi Izumi , Masahiro Yoshimoto , Takahiro Hosokawa
IPC分类号： H04J14/08
CPC分类号： H04J14/02 , H04B10/299 , H04J14/0227 , H04J14/0238 , H04J14/0246 , H04J14/0283 , H04J14/0284
摘要： An optical transmission apparatus that improves the reliability of system operation by efficiently limiting the line speed of a signal sent from a user with a guard mechanism. An optical branching section makes an optical signal branch in two directions. A through branching line passes an optical signal in its original condition and sends the optical signal as a through optical branch signal. A delay branching line delays an optical signal by a delay amount set and sends the optical signal as a delayed optical branch signal. An optical multiplexing section combines the through optical branch signal and the delayed optical branch signal. A line speed limitation section limits acceptance of the line speed of the optical signal inputted by generating a multiplexed optical signal that meets a pulse mask standard for an optical signal to be passed for the optical signal which is sent at a line speed lower than or equal to a line speed settled under contract with a user and which is to be passed and by setting the delay amount for generating a multiplexed optical signal that does not meet a pulse mask standard for an optical signal acceptance of which is to be refused for the optical signal which is sent at a line speed higher than the line speed settled under contract with the user and acceptance of which is to be refused.
摘要翻译：一种光传输装置，其通过有效地限制由具有防护机构的用户发送的信号的线路速度来提高系统操作的可靠性。光分支部分使光信号在两个方向上分支。通过分支线在其原始状态下通过光信号，并将光信号作为通过光分支信号发送。延迟分支线将光信号延迟设定的延迟量，并发送光信号作为延迟光分支信号。光复用部分结合了通过光分支信号和延迟光分支信号。线路速度限制部通过生成符合要通过的光信号的脉冲掩码标准的复用光信号来输入的光信号的线速度的接受限制为以低于或等于的线速度发送的光信号以与用户约定并将要通过的线路速度，并且通过设置用于生成不满足光信号接收的不符合脉冲掩码标准的复用光信号的延迟量用于光信号接收信号以高于与用户签订的线路速度高于线速度的线路发送，并且接收将被拒绝的信号。

10. 发明申请

US20050255713A1 Method and apparatus for forming nitrided silicon film 审中-公开
标题翻译：形成氮化硅膜的方法和装置
公开(公告)号：US20050255713A1
公开(公告)日：2005-11-17
申请号：US10520815
申请日：2003-07-04
申请人： Kohshi Taguchi , Masahiro Yoshimoto
发明人： Kohshi Taguchi , Masahiro Yoshimoto
IPC分类号： C23C16/34 , C23C16/452 , H01L21/318 , C23C16/00 , H05H1/24
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/452 , H01L21/02222 , H01L21/02274 , H01L21/3185
摘要： A method for forming a silicon nitride film which comprises heating a substrate (2) placed in the inner space (3) of a chamber (4) to a desired temperature, feeding a hexamethyl disilazane gas and a gas containing active species formed by the plasma excitation of an N2 gas to the chamber (4) holding the substrate (2), to thereby deposit a reaction product formed by the reaction of the hexaalkyldisilazan gas with the above active species and form the silicon nitride film. The method allows the formation of a silicon nitride film being reduced in the contents of carbon and hydrogen with safety and good efficiency.
摘要翻译：一种形成氮化硅膜的方法，其包括将放置在室（4）的内部空间（3）中的衬底（2）加热到所需温度，将六甲基二硅氮烷气体和包含由等离子体形成的活性物质的气体将N 2 O 2气体激发到保持基板（2）的室（4），从而沉积由六烷基二硅氮烷气体与上述活性物质反应形成的反应产物，并形成氮化硅电影。该方法允许形成氮化硅膜，其安全性和效率降低了碳和氢的含量。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式