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1. 发明授权

US5376231A Substrate for recording head, recording head and method for producing same 失效
标题翻译：记录头基板，记录头及其制造方法
公开(公告)号：US5376231A
公开(公告)日：1994-12-27
申请号：US871188
申请日：1992-04-20
申请人： Shigeyuki Matsumoto , Yasuhiro Naruse , Genzo Monma , Kei Fujita , Seiji Kamei , Yutaka Akino , Yasuhiro Sekine , Yukihiro Hayakawa
发明人： Shigeyuki Matsumoto , Yasuhiro Naruse , Genzo Monma , Kei Fujita , Seiji Kamei , Yutaka Akino , Yasuhiro Sekine , Yukihiro Hayakawa
IPC分类号： B41J2/14 , B41J2/16 , H01L21/321 , H01L21/3213 , H01L21/306 , B44C1/22 , C23F1/00
CPC分类号： B41J2/1629 , B41J2/14129 , B41J2/1604 , B41J2/1628 , B41J2/1631 , B41J2/164 , B41J2/1642 , H01L21/321 , H01L21/32134 , B41J2202/03 , B41J2202/13
摘要： A method for producing a substrate for a recording head wherein a plurality of electro-thermal converting elements, a plurality of driving functional elements for respectively driving the electro-thermal converting elements and a plurality of wiring electrodes for respectively connecting each of the driving functional elements and each of the electro-thermal converting elements are formed on a supporting member by photolithography comprises forming the wiring electrodes by etching a material layer for the wiring electrodes while etchingwise removing a photoresist for masking the material layer for the wiring electrodes.
摘要翻译：一种用于制造用于记录头的基板的方法，其中多个电热转换元件，用于分别驱动电热转换元件的多个驱动功能元件和用于分别连接每个驱动功能元件的多个布线电极并且每个电热转换元件通过光刻形成在支撑构件上，包括通过蚀刻用于布线电极的材料层来形成布线电极，同时蚀刻去除用于掩蔽布线电极的材料层的光致抗蚀剂。

2. 发明授权

US5527730A Method of forming a capacitor having contact hole treated with hydrogen atoms and energy beam 失效
标题翻译：形成具有用氢原子和能量束处理的接触孔的电容器的方法
公开(公告)号：US5527730A
公开(公告)日：1996-06-18
申请号：US425081
申请日：1995-04-19
申请人： Yuzo Kayaoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
发明人： Yuzo Kayaoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
IPC分类号： H01L21/02 , H01L21/285 , H01L21/8246 , H01L27/112 , H01L21/70 , H01L27/00
CPC分类号： H01L28/40 , H01L21/28537 , H01L27/112 , H01L27/11226 , Y10S148/14 , Y10S438/974
摘要： An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.
摘要翻译：在半导体基体的表面上形成绝缘膜，除去绝缘膜的一部分，使表面出现在外部。暴露的表面用氢终止，然后施加能量束以选择性地除去终止的氢。金属被选择性地沉积在以左氢原子终止的部分上。

3. 发明授权

US5963812A Manufacturing method of a semiconductor apparatus having an electron donative surface in a side wall portion 失效
标题翻译：在侧壁部分具有给电子表面的半导体装置的制造方法
公开(公告)号：US5963812A
公开(公告)日：1999-10-05
申请号：US814016
申请日：1997-03-10
申请人： Yuzo Kataoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
发明人： Yuzo Kataoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
IPC分类号： H01L21/02 , H01L21/285 , H01L21/8246 , H01L27/112 , H01L21/336
CPC分类号： H01L28/40 , H01L21/28537 , H01L27/112 , H01L27/11226 , Y10S148/14 , Y10S438/974
摘要： An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.
摘要翻译：在半导体基体的表面上形成绝缘膜，除去绝缘膜的一部分，使表面出现在外部。暴露的表面用氢终止，然后施加能量束以选择性地除去终止的氢。金属被选择性地沉积在以左氢原子终止的部分上。

4. 发明授权

US5580808A Method of manufacturing a ROM device having contact holes treated with hydrogen atoms and energy beam 失效
标题翻译：制造具有用氢原子和能量束处理的接触孔的ROM器件的方法
公开(公告)号：US5580808A
公开(公告)日：1996-12-03
申请号：US327799
申请日：1994-10-24
申请人： Yuzo Kataoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
发明人： Yuzo Kataoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
IPC分类号： H01L21/02 , H01L21/285 , H01L21/8246 , H01L27/112 , H01L21/265
CPC分类号： H01L28/40 , H01L21/28537 , H01L27/112 , H01L27/11226 , Y10S148/14 , Y10S438/974
摘要： A method for manufacturing a mask ROM by first forming a contact hole with a semiconductor within. A surface treatment is then applied to supply by hydrogen atoms to the surface of the semiconductor. The contact hole is selectively irradiated with energy beams so as to produce an irradiated contact hole and a non-irradiated contact hole. In the non-irradiated contact hole a conductive or semiconductor thin film is formed and a circuit formed on the conductive or semiconductor thin film. The circuit and the non-irradiated hole are connected to each other and the irradiated hole and the circuit are insulated from each other.
摘要翻译：一种通过首先在半导体内形成接触孔来制造掩模ROM的方法。然后施加表面处理以将氢原子供给到半导体的表面。用能量束选择性地照射接触孔，以产生照射的接触孔和未照射的接触孔。在未经照射的接触孔中，形成导电或半导体薄膜，并在导电或半导体薄膜上形成电路。电路和未照射的孔彼此连接，并且照射的孔和电路彼此绝缘。

5. 发明授权

US5569614A Method of forming metal pattern including a schottky diode 失效
标题翻译：形成包括肖特基二极管的金属图案的方法
公开(公告)号：US5569614A
公开(公告)日：1996-10-29
申请号：US435834
申请日：1995-05-05
申请人： Yuzo Kataoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
发明人： Yuzo Kataoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
IPC分类号： H01L21/02 , H01L21/285 , H01L21/8246 , H01L27/112 , H01L21/265
CPC分类号： H01L28/40 , H01L21/28537 , H01L27/112 , H01L27/11226 , Y10S148/14 , Y10S438/974
摘要： An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.
摘要翻译：在半导体基体的表面上形成绝缘膜，除去绝缘膜的一部分，使表面出现在外部。暴露的表面用氢终止，然后施加能量束以选择性地除去终止的氢。金属被选择性地沉积在以左氢原子终止的部分上。

6. 发明授权

US5264874A Ink jet recording system 失效
标题翻译：喷墨记录系统
公开(公告)号：US5264874A
公开(公告)日：1993-11-23
申请号：US652432
申请日：1991-02-07
申请人： Shigeyuki Matsumoto , Asao Saito , Yasuhiro Naruse , Kei Fujita
发明人： Shigeyuki Matsumoto , Asao Saito , Yasuhiro Naruse , Kei Fujita
IPC分类号： B41J2/14 , B41J2/16 , B41J2/34 , B41J2/05
CPC分类号： B41J2/34 , B41J2/14129 , B41J2/1604 , B41J2/1626 , B41J2/1631 , B41J2/1637 , B41J2/1642 , B41J2/1646 , B41J2202/13
摘要： A recording head for discharging ink by using thermal energy comprises a plurality of outlets for discharging ink and a substrate including a common substrate plate of P type, a plurality of electrothermal converting elements and a plurality of functional elements connected to the respective electrothermal converting elements and formed on the common substrate plate as well as the electrothermal converting elements. Each of the functional elements has a first semiconductor region of N type, a second semiconductor region of P type provided within the first semiconductor region and a third semiconductor region of N type provided within the second semiconductor region, so as to form a rectifying junction. The first, second and third semiconductor regions are formed by diffusion of impurity atoms in the common semiconductor substrate plate.

7. 发明授权

US06467884B1 Substrate unit for liquid discharging head, method for producing the same, liquid discharging head, cartridge, and image forming apparatus 有权
标题翻译：液体排放头用基板单元，其制造方法，排液头，筒和图像形成装置
公开(公告)号：US06467884B1
公开(公告)日：2002-10-22
申请号：US09643931
申请日：2000-08-23
申请人： Fumio Murooka , Kei Fujita , Yukihiro Hayakawa , Makoto Terui
发明人： Fumio Murooka , Kei Fujita , Yukihiro Hayakawa , Makoto Terui
IPC分类号： B41J205
CPC分类号： B41J2/14129 , B41J2/1601 , B41J2/1623 , B41J2/1628 , B41J2/1629 , B41J2/1631 , H05K3/28
摘要： To provide a substrate unit for liquid discharging head, a method for producing the same, a liquid discharging head, a cartridge, and an image forming apparatus. The substrate unit for liquid discharging head is for a head which gives thermal energy to the liquid for film boiling, to discharge droplets of the liquid from its discharge port. The substrate unit includes an electrothermal transducer provided on the substrate surface to generate thermal energy, a pair of electrode wiring circuits provided on the substrate surface and connected to the transducer, first protective layer formed over the substantially entire surface of the substrate to cover a pair of the electrode wiring circuits and transducer, and second protective layer formed over the first protective layer to cover the transducer and the area where the transducer is connected to the wiring circuit, in which a pair of the electrode wiring circuits are 1800 to 2400 Å thick, and the portion of the first protective layer covered by the second protective layer is 2600 to 3400 Å thick and thicker than the portion of the first protective layer not covered by the second protective layer.
摘要翻译：提供一种用于排液头的基板单元，其制造方法，液体排放头，盒和图像形成装置。用于喷液头的基板单元用于向液体进行薄膜沸腾的热能，以从其排出口排出液体的液滴。基板单元包括设置在基板表面上以产生热能的电热换能器，设置在基板表面上并连接到换能器的一对电极布线电路，形成在基板的基本整个表面上以覆盖一对的第一保护层的电极布线电路和传感器;以及第二保护层，形成在第一保护层上以覆盖换能器和传感器连接到布线电路的区域，其中一对电极布线电路的厚度为1800至2400埃并且由第二保护层覆盖的第一保护层的部分比未被第二保护层覆盖的第一保护层的部分厚2600至3400。

8. 发明授权

US06825543B2 Semiconductor device, method for manufacturing the same, and liquid jet apparatus 有权
公开(公告)号：US06825543B2
公开(公告)日：2004-11-30
申请号：US10025674
申请日：2001-12-26
申请人： Mineo Shimotsusa , Kei Fujita , Yukihiro Hayakawa
发明人： Mineo Shimotsusa , Kei Fujita , Yukihiro Hayakawa
IPC分类号： H01L2358
CPC分类号： H01L29/7816 , B41J2/14072 , B41J2202/13 , H01L21/26586 , H01L27/088 , H01L29/0696 , H01L29/1095 , H01L29/42368 , H01L29/66674 , H01L29/7835 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device in which electro-thermal conversion elements and switching devices for flowing currents through the elements are integrated on a first conductive type semiconductor substrate. The switching devices are insulated gate type field effect transistors having a second conductive type first semiconductor region on one principal surface of the semiconductor substrate; a first conductive type second semiconductor region for supplying a channel region and for adjoining the first semiconductor region; a second conductive type source region on the surface of the second semiconductor region; a second conductive type drain region on the surface of the first semiconductor region; and gate electrodes on the channel region with a gate insulator film between them. The second semiconductor region is formed by a semiconductor having an impurity concentration higher than that of the first semiconductor region, and is disposed between two adjacent drain regions, separating them in a traverse direction.

9. 发明授权

US06962405B2 Substrate for ink jet recording head, ink jet recording head and ink jet recording apparatus using ink jet recording head 有权
标题翻译：用于喷墨记录头的基板，喷墨记录头和使用喷墨记录头的喷墨记录装置
公开(公告)号：US06962405B2
公开(公告)日：2005-11-08
申请号：US10636643
申请日：2003-08-08
申请人： Yoshiyuki Imanaka , Kei Fujita , Hiraku Kozuka , Mineo Shimotsusa , Yukihiro Hayakawa , Takuya Hatsui , Muga Mochizuki , Souta Takeuchi , Takashi Morii , Takaaki Yamaguchi , Kousuke Kubo
发明人： Yoshiyuki Imanaka , Kei Fujita , Hiraku Kozuka , Mineo Shimotsusa , Yukihiro Hayakawa , Takuya Hatsui , Muga Mochizuki , Souta Takeuchi , Takashi Morii , Takaaki Yamaguchi , Kousuke Kubo
IPC分类号： B41J2/05 , B41J2/14 , H01L29/78
CPC分类号： B41J2/14072 , B41J2202/13
摘要： In a case where first wirings (wirings for a driving power supply (VH)) commonly connected to a plurality of electro-thermal converting elements and adapted to supply an electric power to the plurality of electro-thermal converting elements and second wirings (high voltage grounding wirings (GNDH)) for connecting source areas of respective switching elements to grounding potential are provided, resistance of the second wiring is selected to be smaller than resistance of the first wiring.
摘要翻译：在与多个电热转换元件共同连接并适于向多个电热转换元件和第二配线（高电压）供给电力的第一布线（用于驱动电源（VH）的布线）的情况下提供用于将各个开关元件的源极区域连接到接地电位的接地布线（GNDH）），第二布线的电阻被选择为小于第一布线的电阻。

10. 发明授权

US06867457B2 Semiconductor device and liquid jetting device using the same 有权
标题翻译：半导体装置及使用其的液体喷射装置
公开(公告)号：US06867457B2
公开(公告)日：2005-03-15
申请号：US10615288
申请日：2003-07-09
申请人： Yukihiro Hayakawa , Kei Fujita , Mineo Shimotsusa
发明人： Yukihiro Hayakawa , Kei Fujita , Mineo Shimotsusa
IPC分类号： B41J2/05 , B41J2/14 , B41J2/16 , H01L21/336 , H01L21/8234 , H01L27/088 , H01L29/06 , H01L29/78 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/7816 , B41J2/14072 , B41J2/14129 , B41J2202/13 , H01L27/088 , H01L29/0696 , H01L29/66681 , H01L29/7835
摘要： A semiconductor device having a plurality of electrothermal conversion elements and a plurality of switching elements for flowing current through the electrothermal conversion elements, respectively formed on a semiconductor substrate of a first conductivity type, wherein each of the switching elements is an insulated gate field effect transistor including: a first semiconductor region of a second conductivity type opposite to the first conductivity type, the first semiconductor region being formed on a principal surface of the semiconductor substrate, a second semiconductor region of the first conductivity type for providing a channel region, the second semiconductor region being formed adjacent to the first semiconductor region, a source region of the second conductivity type formed in a surface layer of the second semiconductor region, a drain region of the second conductivity type formed in a surface layer of the first semiconductor region, and a gate electrode formed on a gate insulating film on the channel region, and a resistivity of the semiconductor substrate is 5 to 18 Ωcm, and the first semiconductor region has a depth of 2.0 to 2.2 μm along a depth direction of the semiconductor substrate and an impurity concentration of 1×1014 to 1×1018/cm3.
摘要翻译：一种半导体器件，具有多个电热转换元件和多个开关元件，用于使电流流过电热转换元件，分别形成在第一导电类型的半导体衬底上，其中每个开关元件是绝缘栅场效应晶体管包括：与所述第一导电类型相反的第二导电类型的第一半导体区域，所述第一半导体区域形成在所述半导体衬底的主表面上，所述第一导电类型的第二半导体区域用于提供沟道区域，所述第二半导体区域半导体区域形成在第一半导体区域附近，形成在第二半导体区域的表面层中的第二导电类型的源极区域，形成在第一半导体区域的表面层中的第二导电类型的漏极区域，以及形成在栅极上的栅电极并且半导体衬底的电阻率为5〜18Ω·cm，第一半导体区域沿着半导体衬底的深度方向的深度为2.0〜2.2μm，杂质浓度为1×10 14Ω·cm，至1×10 18 / cm 3。

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