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1. 发明授权

US5527730A Method of forming a capacitor having contact hole treated with hydrogen atoms and energy beam 失效
标题翻译：形成具有用氢原子和能量束处理的接触孔的电容器的方法
公开(公告)号：US5527730A
公开(公告)日：1996-06-18
申请号：US425081
申请日：1995-04-19
申请人： Yuzo Kayaoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
发明人： Yuzo Kayaoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
IPC分类号： H01L21/02 , H01L21/285 , H01L21/8246 , H01L27/112 , H01L21/70 , H01L27/00
CPC分类号： H01L28/40 , H01L21/28537 , H01L27/112 , H01L27/11226 , Y10S148/14 , Y10S438/974
摘要： An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.
摘要翻译：在半导体基体的表面上形成绝缘膜，除去绝缘膜的一部分，使表面出现在外部。暴露的表面用氢终止，然后施加能量束以选择性地除去终止的氢。金属被选择性地沉积在以左氢原子终止的部分上。

2. 发明授权

US5963812A Manufacturing method of a semiconductor apparatus having an electron donative surface in a side wall portion 失效
标题翻译：在侧壁部分具有给电子表面的半导体装置的制造方法
公开(公告)号：US5963812A
公开(公告)日：1999-10-05
申请号：US814016
申请日：1997-03-10
申请人： Yuzo Kataoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
发明人： Yuzo Kataoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
IPC分类号： H01L21/02 , H01L21/285 , H01L21/8246 , H01L27/112 , H01L21/336
CPC分类号： H01L28/40 , H01L21/28537 , H01L27/112 , H01L27/11226 , Y10S148/14 , Y10S438/974
摘要： An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.
摘要翻译：在半导体基体的表面上形成绝缘膜，除去绝缘膜的一部分，使表面出现在外部。暴露的表面用氢终止，然后施加能量束以选择性地除去终止的氢。金属被选择性地沉积在以左氢原子终止的部分上。

3. 发明授权

US5580808A Method of manufacturing a ROM device having contact holes treated with hydrogen atoms and energy beam 失效
标题翻译：制造具有用氢原子和能量束处理的接触孔的ROM器件的方法
公开(公告)号：US5580808A
公开(公告)日：1996-12-03
申请号：US327799
申请日：1994-10-24
申请人： Yuzo Kataoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
发明人： Yuzo Kataoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
IPC分类号： H01L21/02 , H01L21/285 , H01L21/8246 , H01L27/112 , H01L21/265
CPC分类号： H01L28/40 , H01L21/28537 , H01L27/112 , H01L27/11226 , Y10S148/14 , Y10S438/974
摘要： A method for manufacturing a mask ROM by first forming a contact hole with a semiconductor within. A surface treatment is then applied to supply by hydrogen atoms to the surface of the semiconductor. The contact hole is selectively irradiated with energy beams so as to produce an irradiated contact hole and a non-irradiated contact hole. In the non-irradiated contact hole a conductive or semiconductor thin film is formed and a circuit formed on the conductive or semiconductor thin film. The circuit and the non-irradiated hole are connected to each other and the irradiated hole and the circuit are insulated from each other.
摘要翻译：一种通过首先在半导体内形成接触孔来制造掩模ROM的方法。然后施加表面处理以将氢原子供给到半导体的表面。用能量束选择性地照射接触孔，以产生照射的接触孔和未照射的接触孔。在未经照射的接触孔中，形成导电或半导体薄膜，并在导电或半导体薄膜上形成电路。电路和未照射的孔彼此连接，并且照射的孔和电路彼此绝缘。

4. 发明授权

US5569614A Method of forming metal pattern including a schottky diode 失效
标题翻译：形成包括肖特基二极管的金属图案的方法
公开(公告)号：US5569614A
公开(公告)日：1996-10-29
申请号：US435834
申请日：1995-05-05
申请人： Yuzo Kataoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
发明人： Yuzo Kataoka , Tetsuo Asaba , Kenji Makino , Hiroshi Yuzurihara , Kei Fujita , Seiji Kamei , Yutaka Akino , Yutaka Yuge , Mineo Shimotsusa , Hideshi Kuwabara
IPC分类号： H01L21/02 , H01L21/285 , H01L21/8246 , H01L27/112 , H01L21/265
CPC分类号： H01L28/40 , H01L21/28537 , H01L27/112 , H01L27/11226 , Y10S148/14 , Y10S438/974
摘要： An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.
摘要翻译：在半导体基体的表面上形成绝缘膜，除去绝缘膜的一部分，使表面出现在外部。暴露的表面用氢终止，然后施加能量束以选择性地除去终止的氢。金属被选择性地沉积在以左氢原子终止的部分上。

5. 发明授权

US06825543B2 Semiconductor device, method for manufacturing the same, and liquid jet apparatus 有权
公开(公告)号：US06825543B2
公开(公告)日：2004-11-30
申请号：US10025674
申请日：2001-12-26
申请人： Mineo Shimotsusa , Kei Fujita , Yukihiro Hayakawa
发明人： Mineo Shimotsusa , Kei Fujita , Yukihiro Hayakawa
IPC分类号： H01L2358
CPC分类号： H01L29/7816 , B41J2/14072 , B41J2202/13 , H01L21/26586 , H01L27/088 , H01L29/0696 , H01L29/1095 , H01L29/42368 , H01L29/66674 , H01L29/7835 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device in which electro-thermal conversion elements and switching devices for flowing currents through the elements are integrated on a first conductive type semiconductor substrate. The switching devices are insulated gate type field effect transistors having a second conductive type first semiconductor region on one principal surface of the semiconductor substrate; a first conductive type second semiconductor region for supplying a channel region and for adjoining the first semiconductor region; a second conductive type source region on the surface of the second semiconductor region; a second conductive type drain region on the surface of the first semiconductor region; and gate electrodes on the channel region with a gate insulator film between them. The second semiconductor region is formed by a semiconductor having an impurity concentration higher than that of the first semiconductor region, and is disposed between two adjacent drain regions, separating them in a traverse direction.

6. 发明授权

US07056798B2 Semiconductor device, method for manufacturing the same, and liquid jet apparatus 失效
标题翻译：半导体装置及其制造方法以及液体喷射装置
公开(公告)号：US07056798B2
公开(公告)日：2006-06-06
申请号：US10657269
申请日：2003-09-09
申请人： Mineo Shimotsusa , Kei Fujita , Yukihiro Hayakawa
发明人： Mineo Shimotsusa , Kei Fujita , Yukihiro Hayakawa
IPC分类号： H01L21/336
CPC分类号： H01L29/7816 , B41J2/14072 , B41J2202/13 , H01L21/26586 , H01L27/088 , H01L29/0696 , H01L29/1095 , H01L29/42368 , H01L29/66674 , H01L29/7835 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device in which electro-thermal conversion elements and switching devices for flowing currents through the elements are integrated on a first conductive type semiconductor substrate. The switching devices are insulated gate type field effect transistors having a second conductive type first semiconductor region on one principal surface of the semiconductor substrate; a first conductive type second semiconductor region for supplying a channel region and for adjoining the first semiconductor region; a second conductive type source region on the surface of the second semiconductor region; a second conductive type drain region on the surface of the first semiconductor region; and gate electrodes on the channel region with a gate insulator film between them. The second semiconductor region is formed by a semiconductor having an impurity concentration higher than that of the first semiconductor region, and is disposed between two adjacent drain regions, separating them in a traverse direction.
摘要翻译：一种半导体器件，其中电流转换元件和用于使流过元件的电流的开关器件集成在第一导电类型半导体衬底上。开关器件是在半导体衬底的一个主表面上具有第二导电类型的第一半导体区域的绝缘栅型场效应晶体管; 第一导电型第二半导体区域，用于提供沟道区域并邻接第一半导体区域; 在所述第二半导体区域的表面上的第二导电类型源极区域; 在所述第一半导体区域的表面上的第二导电类型漏极区域; 和沟道区上的栅极电极，栅极绝缘膜在它们之间。第二半导体区域由具有比第一半导体区域的杂质浓度高的杂质浓度的半导体形成，并且设置在两个相邻的漏极区域之间，沿横向方向分离。

7. 发明授权

US06962405B2 Substrate for ink jet recording head, ink jet recording head and ink jet recording apparatus using ink jet recording head 有权
标题翻译：用于喷墨记录头的基板，喷墨记录头和使用喷墨记录头的喷墨记录装置
公开(公告)号：US06962405B2
公开(公告)日：2005-11-08
申请号：US10636643
申请日：2003-08-08
申请人： Yoshiyuki Imanaka , Kei Fujita , Hiraku Kozuka , Mineo Shimotsusa , Yukihiro Hayakawa , Takuya Hatsui , Muga Mochizuki , Souta Takeuchi , Takashi Morii , Takaaki Yamaguchi , Kousuke Kubo
发明人： Yoshiyuki Imanaka , Kei Fujita , Hiraku Kozuka , Mineo Shimotsusa , Yukihiro Hayakawa , Takuya Hatsui , Muga Mochizuki , Souta Takeuchi , Takashi Morii , Takaaki Yamaguchi , Kousuke Kubo
IPC分类号： B41J2/05 , B41J2/14 , H01L29/78
CPC分类号： B41J2/14072 , B41J2202/13
摘要： In a case where first wirings (wirings for a driving power supply (VH)) commonly connected to a plurality of electro-thermal converting elements and adapted to supply an electric power to the plurality of electro-thermal converting elements and second wirings (high voltage grounding wirings (GNDH)) for connecting source areas of respective switching elements to grounding potential are provided, resistance of the second wiring is selected to be smaller than resistance of the first wiring.
摘要翻译：在与多个电热转换元件共同连接并适于向多个电热转换元件和第二配线（高电压）供给电力的第一布线（用于驱动电源（VH）的布线）的情况下提供用于将各个开关元件的源极区域连接到接地电位的接地布线（GNDH）），第二布线的电阻被选择为小于第一布线的电阻。

8. 发明授权

US06867457B2 Semiconductor device and liquid jetting device using the same 有权
标题翻译：半导体装置及使用其的液体喷射装置
公开(公告)号：US06867457B2
公开(公告)日：2005-03-15
申请号：US10615288
申请日：2003-07-09
申请人： Yukihiro Hayakawa , Kei Fujita , Mineo Shimotsusa
发明人： Yukihiro Hayakawa , Kei Fujita , Mineo Shimotsusa
IPC分类号： B41J2/05 , B41J2/14 , B41J2/16 , H01L21/336 , H01L21/8234 , H01L27/088 , H01L29/06 , H01L29/78 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/7816 , B41J2/14072 , B41J2/14129 , B41J2202/13 , H01L27/088 , H01L29/0696 , H01L29/66681 , H01L29/7835
摘要： A semiconductor device having a plurality of electrothermal conversion elements and a plurality of switching elements for flowing current through the electrothermal conversion elements, respectively formed on a semiconductor substrate of a first conductivity type, wherein each of the switching elements is an insulated gate field effect transistor including: a first semiconductor region of a second conductivity type opposite to the first conductivity type, the first semiconductor region being formed on a principal surface of the semiconductor substrate, a second semiconductor region of the first conductivity type for providing a channel region, the second semiconductor region being formed adjacent to the first semiconductor region, a source region of the second conductivity type formed in a surface layer of the second semiconductor region, a drain region of the second conductivity type formed in a surface layer of the first semiconductor region, and a gate electrode formed on a gate insulating film on the channel region, and a resistivity of the semiconductor substrate is 5 to 18 Ωcm, and the first semiconductor region has a depth of 2.0 to 2.2 μm along a depth direction of the semiconductor substrate and an impurity concentration of 1×1014 to 1×1018/cm3.
摘要翻译：一种半导体器件，具有多个电热转换元件和多个开关元件，用于使电流流过电热转换元件，分别形成在第一导电类型的半导体衬底上，其中每个开关元件是绝缘栅场效应晶体管包括：与所述第一导电类型相反的第二导电类型的第一半导体区域，所述第一半导体区域形成在所述半导体衬底的主表面上，所述第一导电类型的第二半导体区域用于提供沟道区域，所述第二半导体区域半导体区域形成在第一半导体区域附近，形成在第二半导体区域的表面层中的第二导电类型的源极区域，形成在第一半导体区域的表面层中的第二导电类型的漏极区域，以及形成在栅极上的栅电极并且半导体衬底的电阻率为5〜18Ω·cm，第一半导体区域沿着半导体衬底的深度方向的深度为2.0〜2.2μm，杂质浓度为1×10 14Ω·cm，至1×10 18 / cm 3。

9. 发明授权

US09252169B2 Solid-state imaging device and imaging system 有权
标题翻译：固态成像装置和成像系统
公开(公告)号：US09252169B2
公开(公告)日：2016-02-02
申请号：US13807084
申请日：2011-06-22
申请人： Masahiro Kobayashi , Mineo Shimotsusa
发明人： Masahiro Kobayashi , Mineo Shimotsusa
IPC分类号： H01L27/146 , H01L27/02 , H01L27/28
CPC分类号： H01L27/14689 , H01L27/0255 , H01L27/0296 , H01L27/146 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/288
摘要： A solid-state imaging device includes: a first semiconductor substrate including a photoelectric conversion element; and a second semiconductor substrate including at least a part of a peripheral circuit arranged in a main face of the second semiconductor substrate, the peripheral circuit generating a signal based on the charge of the photoelectric conversion element, a main face of the first semiconductor substrate and the main face of the second semiconductor substrate being opposed to each other with sandwiching a wiring structure therebetween; a pad to be connected to an external terminal; and a protection circuit electrically connected to the pad and to the peripheral circuit, wherein the protection circuit is arranged in the main face of the second semiconductor substrate.
摘要翻译：固态成像装置包括：包括光电转换元件的第一半导体衬底; 以及第二半导体衬底，包括布置在第二半导体衬底的主面中的外围电路的至少一部分，外围电路基于光电转换元件的电荷，第一半导体衬底的主面和所述第二半导体衬底的主面通过在其间夹着布线结构相互相对; 要连接到外部端子的焊盘; 以及保护电路，电连接到所述焊盘和所述外围电路，其中所述保护电路布置在所述第二半导体衬底的主面中。

10. 发明授权

US09029967B2 Solid-state image pickup device having waveguides in light-receiving and light-shielding areas 有权
标题翻译：在光接收和遮光区域中具有波导的固态图像拾取装置
公开(公告)号：US09029967B2
公开(公告)日：2015-05-12
申请号：US13362649
申请日：2012-01-31
申请人： Mineo Shimotsusa , Masahiro Kobayashi
发明人： Mineo Shimotsusa , Masahiro Kobayashi
IPC分类号： H01L31/0232 , H01L27/146
CPC分类号： H01L27/14623 , H01L27/14614 , H01L27/14621 , H01L27/14625 , H01L27/14629 , H01L27/14636 , H01L27/14638 , H01L27/14643 , H01L27/14645 , H01L27/14685 , H01L27/14689
摘要： A solid-state image pickup device includes a semiconductor substrate in which photoelectric conversion units are arranged. An insulator is disposed on the semiconductor substrate. The insulator has holes associated with the respective photoelectric conversion units. Members are arranged in the respective holes. A light-shielding member is disposed on the opposite side of one of the members from the semiconductor substrate, such that only the associated photoelectric conversion unit is shielded from light. In the solid-state image pickup device, the holes are simultaneously formed and the members are simultaneously formed.
摘要翻译：固体摄像装置包括其中布置有光电转换单元的半导体衬底。绝缘体设置在半导体衬底上。绝缘体具有与各个光电转换单元相关联的孔。会员排列在相应的孔中。遮光构件设置在与半导体基板的一个构件的相对侧上，使得只有相关联的光电转换单元被遮光。在固态图像拾取装置中，同时形成孔并且同时形成构件。

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