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1. 发明授权

US5959655A Light beam scanning apparatus which controls power and spot shape of light beam 失效
标题翻译：光束扫描装置，用于控制光束的光束和斑点形状
公开(公告)号：US5959655A
公开(公告)日：1999-09-28
申请号：US653395
申请日：1996-05-24
申请人： Seiji Maruo , Shinichi Nakatsuka , Akira Arimoto , Kunio Sato , Shinya Kobayashi , Susumu Saito
发明人： Seiji Maruo , Shinichi Nakatsuka , Akira Arimoto , Kunio Sato , Shinya Kobayashi , Susumu Saito
IPC分类号： G01J1/42 , G02B26/12 , H04N1/00 , H04N1/23 , H04N1/40 , G01J1/32
CPC分类号： H04N1/40043 , G01J1/4257 , G02B26/127 , H04N1/00002 , H04N1/00015 , H04N1/00029 , H04N1/00063 , H04N1/00082 , H04N1/0408 , H04N1/0426 , H04N1/2307 , H04N1/2346 , H04N1/40037 , H04N1/4005
摘要： A light beam scanning apparatus in which laser power and spot shape of an emitted laser beam are controlled, has a laser control signal generating part for changing a picture signal to a laser power control signal and a spot shape control signal, a laser power control current generating part which is driven by the laser power control signal, a spot shape control current generating part which is driven by the shape control signal, and a laser beam emission part for emitting a laser beam having a laser power and a spot shape which are controlled by the control signals via a commonly used light wave guiding part, wherein the control signal generating part generates or corrects the control signals based on at least one of the difference between the laser power of a beam to be emitted and a detected laser power, the difference between the spot shape of a beam to be emitted and a detected laser power, a detected temperature at the laser beam emission part, and an effective light emission pixel number.
摘要翻译：控制发射激光束的激光功率和斑点形状的光束扫描装置具有激光控制信号产生部分，用于将图像信号改变为激光功率控制信号和光斑形状控制信号，激光功率控制电流由激光功率控制信号驱动的发光部分，由形状控制信号驱动的光斑形状控制电流产生部分，以及激光束发射部分，用于发射具有被控制的激光光焦度和光斑形状的激光束通过所述控制信号经由通常使用的光波导部，其中，所述控制信号生成部基于所发射的光束的激光功率与所检测的激光功率的差异中的至少一个来生成或校正所述控制信号，要发射的光束的光斑形状与检测到的激光功率之间的差异，激光束发射部分处的检测温度和有效发光像素 el号码。

2. 发明授权

US6091439A Laser printer and light source suitable for the same 失效
标题翻译：激光打印机和光源适合相同
公开(公告)号：US6091439A
公开(公告)日：2000-07-18
申请号：US966193
申请日：1997-11-07
申请人： Shinichi Nakatsuka , Susumu Saito , Akira Arimoto
发明人： Shinichi Nakatsuka , Susumu Saito , Akira Arimoto
IPC分类号： H01S5/042 , H01S3/08
CPC分类号： H01S5/0425 , H01S2301/18
摘要： A laser printer is provided printing with a high precision simply and at a high speed, and the laser printer uses a semiconductor laser which can vary the diameter of the emitted light while the light density is held constant. In the laser printer, laser rays emitted from a semiconductor laser are irradiated onto a photoconductor to vary its surface potential to produce a charge pattern particles adhere, and printing is performed by transferring the changed particles to a printing object. The semiconductor laser has a plurality of waveguide type resonators, the emitted beams of the resonators having a spatial superposition, and light emission is possible so that the emitted beams of the resonators having a spatial superposition with respect to each other among the resonators of the semiconductor laser are not substantially superimposed in time.
摘要翻译：提供了一种激光打印机，其简单且高速地以高精度进行打印，并且激光打印机使用半导体激光器，其可以在光密度保持恒定的同时改变发射光的直径。在激光打印机中，将从半导体激光器发射的激光照射到光电导体上以改变其表面电位以产生电荷图案颗粒粘附，并且通过将改变的颗粒转印到印刷对象来进行印刷。半导体激光器具有多个波导型谐振器，发射的谐振器的光束具有空间叠加，并且发光是可能的，使得谐振器的发射光束在半导体的谐振器之间具有相对于彼此的空间叠加激光器在时间上基本上没有重叠。

3. 发明授权

US06657653B2 Electric photograph system 失效
公开(公告)号：US06657653B2
公开(公告)日：2003-12-02
申请号：US09883185
申请日：2001-06-19
申请人： Shinichi Nakatsuka , Junshin Sakamoto , Akira Arimoto
发明人： Shinichi Nakatsuka , Junshin Sakamoto , Akira Arimoto
IPC分类号： B41J2435
CPC分类号： G06K15/1214 , B41J2/471 , G02B26/12
摘要： An electric photograph system for improving non-linearities of an exposing light intensity and an operating current at a low exposing level when performing analog printing operation. A range (saturable absorber) having a saturable absorbing characteristic is provided in a part of an optical path including a semiconductor laser as light source to improve the non-linearity of the operating current when the light intensity is weak. The saturable absorber may be made in the form of a non current injected area provided in a part of the semiconductor laser as the light source or a thin film layer provided partly in films coated on a facet of the semiconductor laser. Due to the provision of the saturable absorber, the light output power characteristic can exhibit its linearity in its low optical power range, the size of a printing dot can be arithmetically changed, and thus fine laser printing can be realized.

4. 发明授权

US07206329B2 Driving system for a semiconductor laser device 失效
标题翻译：半导体激光器驱动系统
公开(公告)号：US07206329B2
公开(公告)日：2007-04-17
申请号：US10871280
申请日：2004-06-21
申请人： Shinichi Nakatsuka , Jyunshin Sakamoto , Hiroshi Inenaga , Susumu Saito
发明人： Shinichi Nakatsuka , Jyunshin Sakamoto , Hiroshi Inenaga , Susumu Saito
IPC分类号： H01S3/00
CPC分类号： B82Y20/00 , G06K15/1209 , H01S5/042 , H01S5/06808 , H01S5/2206 , H01S5/2231 , H01S5/305 , H01S5/3095 , H01S5/34326 , H01S5/34333 , H01S5/34353 , H01S5/3436 , H01S5/4031
摘要： When a semiconductor laser is energized, a virtual junction temperature rises to reduce a threshold current, which fluctuates a light output by the unit of a several microseconds, thereby causing printing irregularity. An object of the invention is to prevent the fluctuation in light output occurring due to the temperature change caused by the energization of the semiconductor laser with a simple circuit structure and under the driving condition of a small bias current. A constant voltage driving is performed with a circuit or device having negative resistance characteristics being arranged in series with the semiconductor laser. Thus, the reduction in light output of the semiconductor laser due to the temperature rise is compensated for by an increase in driving current thanks to a reduction in rising voltage of current/voltage characteristics.
摘要翻译：当半导体激光器通电时，虚拟结温度上升以减小阈值电流，其使光输出以几微秒为单位波动，从而导致印刷不规则。本发明的目的是为了防止由于由简单的电路结构的半导体激光器的激励引起的温度变化和在小的偏置电流的驱动条件下产生的光输出的波动。使用具有负电阻特性的电路或器件与半导体激光器串联布置来执行恒定电压驱动。因此，由于电流/电压特性的上升电压的降低，由于温度升高导致的半导体激光器的光输出的减少被驱动电流的增加所补偿。

5. 发明授权

US06829265B2 Semiconductor laser array 失效
标题翻译：半导体激光阵列
公开(公告)号：US06829265B2
公开(公告)日：2004-12-07
申请号：US10145022
申请日：2002-05-15
申请人： Shinichi Nakatsuka , Susumu Saito , Junshin Sakamoto , Kazuo Sakaki , Masahide Tokuda
发明人： Shinichi Nakatsuka , Susumu Saito , Junshin Sakamoto , Kazuo Sakaki , Masahide Tokuda
IPC分类号： H01S304
CPC分类号： H01S5/4031 , H01L2224/13 , H01S5/0224 , H01S5/02272 , H01S5/02276
摘要： The subject of the disclosed art is to prevent a short circuit between plural electrodes caused by soldering in the assembling process for a semiconductor laser element. The constitution for improving the subject is as follows. A semiconductor laser device comprises a semiconductor laser chip having a first electrode and a laser sustaining material, in which the laser sustaining material has electrodes and solder layers connected electrically therewith on the surface where the semiconductor laser chip is mounted, the first electrode of the semiconductor laser chip is connected with the solder layer of the laser sustaining material and at least the solder layer of the laser sustaining material extends from at least one end face in the longitudinal direction of an optical resonator of the semiconductor laser chip to the outside of the optical resonator.
摘要翻译：所公开的技术的主题是为了防止在半导体激光元件的组装过程中由焊接引起的多个电极之间的短路。改进主题的宪法如下。半导体激光器件包括具有第一电极和激光维持材料的半导体激光器芯片，其中激光维持材料具有在其上安装半导体激光器芯片的表面上与其电连接的电极和焊料层，半导体的第一电极激光芯片与激光维持材料的焊料层连接，并且至少激光维持材料的焊料层从半导体激光器芯片的光学谐振器的纵向方向上的至少一个端面延伸到光学器件的外部谐振器。

6. 发明申请

US20050169329A1 Laser exposing system and laser printer using the same 失效
标题翻译：激光曝光系统和激光打印机使用相同
公开(公告)号：US20050169329A1
公开(公告)日：2005-08-04
申请号：US10871280
申请日：2004-06-21
申请人： Shinichi Nakatsuka , Jyunshin Sakamoto , Hiroshi Inenaga , Susumu Saito
发明人： Shinichi Nakatsuka , Jyunshin Sakamoto , Hiroshi Inenaga , Susumu Saito
IPC分类号： B41J2/44 , G06K15/12 , H01S3/00 , H01S5/042 , H01S5/068 , H01S5/22 , H01S5/223 , H01S5/30 , H01S5/343 , H01S5/40
CPC分类号： B82Y20/00 , G06K15/1209 , H01S5/042 , H01S5/06808 , H01S5/2206 , H01S5/2231 , H01S5/305 , H01S5/3095 , H01S5/34326 , H01S5/34333 , H01S5/34353 , H01S5/3436 , H01S5/4031
摘要： When a semiconductor laser is energized, a virtual junction temperature rises to reduce a threshold current, which fluctuates a light output by the unit of a several microseconds, thereby causing printing irregularity. An object of the invention is to prevent the fluctuation in light output occurring due to the temperature change caused by the energization of the semiconductor laser with a simple circuit structure and under the driving condition of a small bias current. A constant voltage driving is performed with a circuit or device having negative resistance characteristics being arranged In series with the semiconductor laser. Thus, the reduction in light output of the semiconductor laser due to the temperature rise is compensated for by an increase in driving current thanks to a reduction in rising voltage of current/voltage characteristics.
摘要翻译：当半导体激光器通电时，虚拟结温度上升以减小阈值电流，其使光输出以几微秒为单位波动，从而导致印刷不规则。本发明的目的是为了防止由于由简单的电路结构的半导体激光器的激励引起的温度变化和在小的偏置电流的驱动条件下产生的光输出的波动。利用具有负电阻特性的电路或器件与半导体激光器串联地进行恒压驱动。因此，由于电流/电压特性的上升电压的降低，由于温度升高导致的半导体激光器的光输出的减少被驱动电流的增加所补偿。

7. 发明授权

US4872175A Semiconductor laser device having a lens-like refractive index distribution within the stripe 失效
$Semiconductor laser device having a lens-like refractive index distribution within the stripe$
标题翻译：在该条纹内具有透镜状折射率分布的半导体激光器件
公开(公告)号：US4872175A
公开(公告)日：1989-10-03
申请号：US174421
申请日：1988-03-28
申请人： Shinichi Nakatsuka , Takashi Kajimura
发明人： Shinichi Nakatsuka , Takashi Kajimura
IPC分类号： H01S5/00 , H01S3/00 , H01S5/026 , H01S5/10 , H01S5/40
CPC分类号： H01S5/10 , H01S3/005 , H01S5/026 , H01S5/0264 , H01S5/005 , H01S5/0655 , H01S5/1082 , H01S5/4025
摘要： In a semiconductor laser device having an active layer and clad layers, lens-like portions which magnify radiation are formed in the active layer and/or a clad layer where the radiation leaks, thereby making it possible to enlarge a stripe width and to produce a fundamental mode oscillation of high output. Futher, a lens-like portion which condenses the radiation is formed at an end face of an emission port for a laser beam, thereby making it possible to narrow a radiant angle of the laser beam.

8. 发明授权

US4821275A Laser diode 失效
标题翻译：激光二极管
公开(公告)号：US4821275A
公开(公告)日：1989-04-11
申请号：US140755
申请日：1988-01-04
申请人： Shinichi Nakatsuka , Naoki Chinone , Kazuhisa Uomi , Yuichi Ono , Takashi Kajimura
发明人： Shinichi Nakatsuka , Naoki Chinone , Kazuhisa Uomi , Yuichi Ono , Takashi Kajimura
IPC分类号： H01S5/00 , H01S5/16 , H01S5/223 , H01S3/19
CPC分类号： H01S5/16 , H01S5/2232 , H01S5/2234
摘要： A stripe groove is formed on a semiconductor substrate and buried by lamination of multiple semiconductor layers, and a channel being lower than the substrate surface is formed outside the groove near at least one mirror edge, such that a laser diode with decreased astigmatism can be produced.
摘要翻译：在半导体基板上形成条纹槽，通过层叠多个半导体层而被掩埋，并且在至少一个反射镜边缘附近形成低于基板表面的沟道，从而可以产生具有减小的散光的激光二极管。

9. 发明申请

US20090042327A1 Method for assembling array-type semiconductor laser device 有权
标题翻译：阵列式半导体激光器件的组装方法
公开(公告)号：US20090042327A1
公开(公告)日：2009-02-12
申请号：US12219133
申请日：2008-07-16
申请人： Shinichi Nakatsuka
发明人： Shinichi Nakatsuka
IPC分类号： H01L21/02
CPC分类号： H01S5/4031 , H01S5/02268 , H01S5/02272
摘要： According to an aspect of the present invention, there is provided a method for assembling a semiconductor laser device, including: preparing a laser chip including: a substrate; stripe waveguides that are formed on the substrate and that each includes a gain producing area and a window area; electrodes formed on the stripe waveguides; an insulating layer formed on the electrodes; a metal layer formed on the insulating layer; projections arranged at an interval in the window areas; and joining structures connected to the electrodes and formed in the window areas; preparing a submount including: a first solder; second solders arranged at the interval; and submount electrodes connected to the second solders; contacting the laser chip to the submount by fitting the projections with respect to the second solders; and heating the submount and the laser chip.
摘要翻译：根据本发明的一个方面，提供了一种用于组装半导体激光器件的方法，包括：准备包括：衬底的激光器芯片; 条形波导，其形成在基板上，并且每个包括增益产生区域和窗口区域; 在条形波导上形成的电极; 形成在电极上的绝缘层; 形成在所述绝缘层上的金属层; 在窗口区域间隔布置的突起; 以及连接到电极并形成在窗口区域中的接合结构; 准备一个底座，包括：第一个焊锡; 第二次焊接间隔排列; 和连接到第二焊料的底座电极; 通过将所述突起相对于所述第二焊料接合来将所述激光芯片接触所述基座; 并加热底座和激光芯片。

10. 发明授权

US4783425A Fabrication process of semiconductor lasers 失效
标题翻译：半导体激光器的制造工艺
公开(公告)号：US4783425A
公开(公告)日：1988-11-08
申请号：US924774
申请日：1986-10-30
申请人： Tadashi Fukuzawa , Yuichi Ono , Shinichi Nakatsuka , Takashi Kajimura
发明人： Tadashi Fukuzawa , Yuichi Ono , Shinichi Nakatsuka , Takashi Kajimura
IPC分类号： H01L33/00 , H01S5/20 , H01S5/223 , H01S5/323 , H01S5/34 , H01L21/205 , H01L21/225 , H01L21/265
CPC分类号： B82Y20/00 , H01L33/0062 , H01S5/2231 , H01S5/34 , H01S5/2081 , H01S5/32316
摘要： A p-GaAlAs cladding layer is exposed to the air if a groove of the form of a stripe is formed by chemical etching in an n-GaAs layer that serves as a current confinement layer on the p-GaAlAs cladding layer, the groove being so formed as to reach the cladding layer. The GaAlAs is oxidized so easily that an unstable degradation layer is formed on the surface thereof. To solve this problem according to the prior art, an undoped GaAs layer that serves as a cover layer is formed on the p-GaAlAs cladding layer, the n-GaAs layer is formed, and the etching is effected so that the undoped GaAs layer is simply exposed. The undoped GaAs layer is then heated in the MBE apparatus while being irradiated with the As molecular beam and is thermally etched. Therefore, the cladding layer is exposed in vacuum and the p-GaAlAs layer is formed thereon. However, this method is not suited for mass-production since the thermal etching is unstable and it needs the MBE apparatus of a very high degree of vacuum. Quality of the crystal decreases, too, due to the heating. This invention therefore provides a fabrication process of semiconductor lasers in which the cover layer disappears due to interdiffusion of constituent elements that stem from the diffusion of impurities such as zinc ions in the undoped GaAs layer.
摘要翻译：如果通过在p-GaAlAs包层上作为电流限制层的n-GaAs层中的化学蚀刻形成条纹形式的沟槽，则p-GaAlAs包层暴露于空气中，凹槽为形成为到达包层。 GaAlAs容易氧化，从而在其表面上形成不稳定的降解层。为了解决现有技术的问题，在p-GaAlAs包层上形成作为覆盖层的未掺杂的GaAs层，形成n-GaAs层，进行蚀刻，使未掺杂的GaAs层为简单暴露。然后在MBE装置中加热未掺杂的GaAs层，同时用As分子束照射并进行热蚀刻。因此，在真空中露出包覆层，在其上形成p-GaAlAs层。然而，该方法不适于批量生产，因为热蚀刻不稳定，并且需要非常高真空度的MBE装置。由于加热，晶体的质量也降低。因此，本发明提供一种半导体激光器的制造工艺，其中由于在未掺杂的GaAs层中的诸如锌离子的杂质的扩散而导致的构成元素的相互扩散，覆盖层消失。

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