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    • 1. 发明授权
    • Laser diode array, optical scanning device and printing apparatus
    • 激光二极管阵列,光学扫描装置和打印装置
    • US07664153B2
    • 2010-02-16
    • US12213436
    • 2008-06-19
    • Hiroshi Inenaga
    • Hiroshi Inenaga
    • H01S5/00H01S3/13H01S3/04
    • H01S5/4031H01S5/02236H01S5/0224H01S5/02272H01S5/02469H01S5/02476H01S5/0425
    • According to an aspect of the present invention, there is provided a laser diode array including: a laser array chip including: a substrate; and at least three of laser diodes that are formed on the substrate; first electrodes that are formed on each of the laser diodes so as to be isolated from one another; a sub-mount; and second electrodes that are formed on the sub-mount so as to correspond to the first electrodes and so as to be isolated from one another, wherein the laser array chip is mounted on the sub-mount through the first electrodes and the second electrodes, and wherein, among contacting surfaces between each of the first electrodes and a corresponding one of the second electrodes, a contacting area of a central one of the contacting surfaces is larger than that of an end one of the contacting surfaces.
    • 根据本发明的一个方面,提供了一种激光二极管阵列,包括:激光阵列芯片,包括:基板; 以及形成在所述基板上的至少三个激光二极管; 形成在每个激光二极管上以彼此隔离的第一电极; 一个子座; 以及第二电极,形成在所述子座上以便与所述第一电极对应并且彼此隔离,其中所述激光阵列芯片通过所述第一电极和所述第二电极安装在所述子座上, 并且其中,在每个所述第一电极和所述第二电极中的相应一个之间的接触表面中,所述接触表面的中心一个的接触面积大于所述接触表面中的一个的接触面的接触面积。
    • 2. 发明授权
    • Semiconductor laser device, light scanner, and image forming apparatus
    • 半导体激光装置,光扫描器和图像形成装置
    • US07542496B2
    • 2009-06-02
    • US11937690
    • 2007-11-09
    • Hiroshi InenagaJunshin Sakamoto
    • Hiroshi InenagaJunshin Sakamoto
    • H01S3/04H01S5/00
    • H01S5/0224B41J2/471H01S5/02272H01S5/02476H01S5/02492H01S5/4031
    • A semiconductor laser device including an edge-emitting type laser chip having at least three emitting points in one light emitting edge, a sub-mount mounted with the laser chip, and a heat sink bonded to the sub-mount through a solder layer. When R designates a linear expansion coefficient ratio of the heat sink to the sub-mount and D designates a distance between light emitting points at opposite ends in the light emitting edge of the laser chip, materials of the sub-mount and the heat sink and the distance D are set to satisfy the following relation: D≦5.48×R−2.13 A difference between stress acting on one laser element and another in the laser chip due to shrinkage of the heat sink when melted solder is cooled down is reduced so that a difference in light output characteristics between one light emitting point and another can be reduced.
    • 一种半导体激光装置,其包括在一个发光边缘中具有至少三个发射点的边缘发射型激光器芯片,安装有激光芯片的子安装座以及通过焊料层接合到副安装座的散热片。 当R表示散热器与子座的线性膨胀系数比,D表示激光芯片的发光边缘的相对端的发光点之间的距离,子座和散热片的材料, 距离D设定为满足以下关系:<?in-line-formula description =“In-line formula”end =“lead”?> D <= 5.48xR-2.13 <?in-line-formula description =“ 在线公式“end =”tail“?>当熔化的焊料被冷却时,由于散热器的收缩而在激光芯片中作用在一个激光元件上的应力之间的差异减小,使得光输出特性 在一个发光点与另一个发光点之间可以减少。
    • 3. 发明授权
    • Polygonal mirror device
    • 多角镜装置
    • US06243187B1
    • 2001-06-05
    • US09497642
    • 2000-02-03
    • Hiroshi InenagaJunshin Sakamoto
    • Hiroshi InenagaJunshin Sakamoto
    • G02B2608
    • G02B26/121
    • An annular groove is formed on the upper surface, or a surface C, of a rotor member. A surface D and a surface E of a rotor member, which are located closer to the center than the annular groove when radially viewed, are machined for correcting a dynamic unbalance of the rotor member. Therefore, a nonuniform deformation of the rotor member, which results from a centrifugal load and heat, which are due to the rotation of the rotor member, reaches the inside-diameter defining wall of the annular groove, but does not reach the outside-diameter defining wall of the annular groove since it is blocked by the annular groove.
    • 在转子构件的上表面或表面C上形成环形槽。 加工了径向观察时位于比环形槽更靠近中心的转子部件的表面D和表面E,用于校正转子部件的动态不平衡。 因此,由转子构件的旋转引起的由离心载荷和热量引起的转子构件的不均匀变形到达环形槽的内径限定壁,但不达到外径 由于其被环形槽阻挡,所以限定了环形槽的壁。
    • 5. 发明申请
    • Laser diode array, optical scannning device and printing apparatus
    • 激光二极管阵列,光学扫描装置和打印装置
    • US20080317082A1
    • 2008-12-25
    • US12213436
    • 2008-06-19
    • Hiroshi Inenaga
    • Hiroshi Inenaga
    • H01S5/026
    • H01S5/4031H01S5/02236H01S5/0224H01S5/02272H01S5/02469H01S5/02476H01S5/0425
    • According to an aspect of the present invention, there is provided a laser diode array including: a laser array chip including: a substrate; and at least three of laser diodes that are formed on the substrate; first electrodes that are formed on each of the laser diodes so as to be isolated from one another; a sub-mount; and second electrodes that are formed on the sub-mount so as to correspond to the first electrodes and so as to be isolated from one another, wherein the laser array chip is mounted on the sub-mount through the first electrodes and the second electrodes, and wherein, among contacting surfaces between each of the first electrodes and a corresponding one of the second electrodes, a contacting area of a central one of the contacting surfaces is larger than that of an end one of the contacting surfaces.
    • 根据本发明的一个方面,提供了一种激光二极管阵列,包括:激光阵列芯片,包括:基板; 以及形成在所述基板上的至少三个激光二极管; 形成在每个激光二极管上以彼此隔离的第一电极; 一个子座; 以及第二电极,形成在所述子座上以便与所述第一电极对应并且彼此隔离,其中所述激光阵列芯片通过所述第一电极和所述第二电极安装在所述子座上, 并且其中,在每个所述第一电极和所述第二电极中的相应一个之间的接触表面中,所述接触表面的中心一个的接触面积大于所述接触表面中的一个的接触面的接触面积。
    • 6. 发明申请
    • Semiconductor Laser Device, Light Scanner, and Image Forming Apparatus
    • 半导体激光装置,光扫描器和成像装置
    • US20080112729A1
    • 2008-05-15
    • US11937690
    • 2007-11-09
    • Hiroshi INENAGAJunshin Sakamoto
    • Hiroshi INENAGAJunshin Sakamoto
    • H01S5/024G02B26/12G03G15/04
    • H01S5/0224B41J2/471H01S5/02272H01S5/02476H01S5/02492H01S5/4031
    • A semiconductor laser device including an edge-emitting type laser chip having at least three emitting points in one light emitting edge, a sub-mount mounted with the laser chip, and a heat sink bonded to the sub-mount through a solder layer. When R designates a linear expansion coefficient ratio of the heat sink to the sub-mount and D designates a distance between light emitting points at opposite ends in the light emitting edge of the laser chip, materials of the sub-mount and the heat sink and the distance D are set to satisfy the following relation: D≦5.48×R−2.13 A difference between stress acting on one laser element and another in the laser chip due to shrinkage of the heat sink when melted solder is cooled down is reduced so that a difference in light output characteristics between one light emitting point and another can be reduced.
    • 一种半导体激光装置,其包括在一个发光边缘中具有至少三个发射点的边缘发射型激光器芯片,安装有激光芯片的子安装座以及通过焊料层接合到副安装座的散热片。 当R表示散热器与子座的线性膨胀系数比,D表示激光芯片的发光边缘的相对端的发光点之间的距离,子座和散热片的材料, 距离D设定为满足以下关系:<?in-line-formula description =“In-line formula”end =“lead”?> D <= 5.48xR 当熔化的焊料被冷却时,由于散热片的收缩而在激光芯片上作用在一个激光元件上的应力之间的差异减小了 可以减少一个发光点与另一个发光点之间的光输出特性的差异。