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1. 发明申请

US20090321017A1 Plasma Processing Apparatus and Plasma Processing Method 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20090321017A1
公开(公告)日：2009-12-31
申请号：US12206021
申请日：2008-09-08
申请人： Tsunehiko Tsubone , Hiroho Kitada , Yosuke Sakai , Ken Yoshioka , Yutaka Omoto , Mamoru Yakushiji , Yutaka Kouzuma
发明人： Tsunehiko Tsubone , Hiroho Kitada , Yosuke Sakai , Ken Yoshioka , Yutaka Omoto , Mamoru Yakushiji , Yutaka Kouzuma
IPC分类号： C23F1/00
CPC分类号： H01L21/67109 , H01J2237/2001 , H01L21/6719 , H01L21/67248 , H01L21/6831
摘要： There is disclosed a plasma processing apparatus wherein a sample placed on the top surface of the sample table located within the processing chamber contained in a vacuum vessel is processed with plasma formed in the processing chamber, comprising a set of ducts cut within the sample table through which cooling medium flows; a film-shaped heater whose heating elements are concentrically embedded in the dielectric film serving as the top surface of the sample table; plural temperature controllers which set up the temperature of the cooling medium flowing through the ducts at different values, respectively; and a control unit which switches over the circulations through the ducts of the cooling medium supplied from the plural temperature controllers.
摘要翻译：公开了一种等离子体处理装置，其中放置在位于真空容器中的处理室内的样品台的顶表面上的样品用处理室中形成的等离子体进行处理，其包括在样品台内切割的一组导管哪个冷却介质流动？其加热元件同心地嵌入在作为样品台的顶表面的电介质膜中的膜状加热器; 多个温度控制器分别设置以不同的值流过管道的冷却介质的温度; 以及控制单元，其通过从多个温度控制器供给的冷却介质的管道切换循环。

2. 发明申请

US20080170969A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20080170969A1
公开(公告)日：2008-07-17
申请号：US11680118
申请日：2007-02-28
申请人： Ken Yoshioka , Yutaka Omoto , Mamoru Yakushiji , Tsunehiko Tsubone , Kazunori Nakamoto
发明人： Ken Yoshioka , Yutaka Omoto , Mamoru Yakushiji , Tsunehiko Tsubone , Kazunori Nakamoto
IPC分类号： G05D23/00
CPC分类号： H01L21/6831 , G05D23/1932 , G05D23/22 , H01L21/67109 , H01L21/67276
摘要： It is possible to provide a plasma etching apparatus that controls the temperature of a sample at a higher speed and with more accuracy to improve the efficiency of processing the sample. A plasma processing apparatus includes a processing chamber to be depressurized and exhausted, a sample placement electrode provided in the processing chamber and having a sample placement surface on which a substrate to be processed is placed, an electromagnetic generation device to generate plasma in the processing chamber, a supply system that supplies processing gas to the processing chamber, a vacuum exhaust system that exhausts inside the processing chamber, a heater layer and a base temperature monitor that are disposed on the sample placement electrode, a wafer temperature estimating unit that estimates a wafer temperature from the base temperature monitor and plasma forming power supply, and a controller that regulates the heater corresponding to output from the temperature estimating unit.
摘要翻译：可以提供一种等离子体蚀刻装置，其以更高的速度和更高的精度来控制样品的温度，以提高样品的处理效率。一种等离子体处理装置，其特征在于，包括要被减压和排出的处理室，设置在处理室中并具有放置有待处理基板的样品放置面的样品放置电极，在处理室中产生等离子体的电磁产生装置向处理室供给处理气体的供给系统，在处理室内排出的真空排气系统，设置在样本设置电极上的加热器层和基底温度监视器，估计晶片的晶片温度估计单元来自基础温度监视器和等离子体形成电源的温度，以及根据来自温度估计单元的输出来调节加热器的控制器。

3. 发明申请

US20070209933A1 Sample holding electrode and a plasma processing apparatus using the same 审中-公开
标题翻译：样品保持电极和使用其的等离子体处理装置
公开(公告)号：US20070209933A1
公开(公告)日：2007-09-13
申请号：US11513070
申请日：2006-08-31
申请人： Ken Yoshioka , Yutaka Omoto , Tsunehiko Tsubone
发明人： Ken Yoshioka , Yutaka Omoto , Tsunehiko Tsubone
IPC分类号： C23C14/00
CPC分类号： H01L21/67109 , H01J37/32431 , H01J2237/2001 , H01L21/6833
摘要： A temperature control type sample-holding electrode using a heater capable of enhancing the performance of controlling the electrode temperature and ensuring the uniformity of static adsorption force over the entire surface, the sample-holding electrode being provided in a processing chamber with a sample being disposed thereon, including a dielectric film having a sample-placing surface and a thin electrode film disposed so as to oppose to the sample-placing surface by way of the dielectric film and comprising a layer of a substantially identical height serving both as a static adsorption electrode and a heater electrode, and provided with power source device capable of simultaneously supplying an AC power for heater and DC power for static adsorption to the thin electrode film.
摘要翻译：一种使用加热器的温度控制型样品保持电极，其能够提高控制电极温度的性能并确保整个表面上的静态吸附力的均匀性，所述样品保持电极设置在处理室中，其中设置有样品在其上，包括具有样品放置表面的电介质膜和通过电介质膜设置成与样品放置表面相对的薄电极膜，并且包括具有基本上相同的高度的层，同时用作静态吸附电极和加热电极，并且设置有能够同时向薄电极膜提供用于加热器的AC电力和静电吸附的DC电力的电源装置。

4. 发明授权

US6156663A Method and apparatus for plasma processing 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US6156663A
公开(公告)日：2000-12-05
申请号：US721732
申请日：1996-09-27
申请人： Katsuya Watanabe , Saburo Kanai , Ryoji Hamasaki , Tsuyoshi Yoshida , Yutaka Omoto , Masayuki Kojima , Syunji Sasabe , Tadamitsu Kanekiyo , Takazumi Ishizu
发明人： Katsuya Watanabe , Saburo Kanai , Ryoji Hamasaki , Tsuyoshi Yoshida , Yutaka Omoto , Masayuki Kojima , Syunji Sasabe , Tadamitsu Kanekiyo , Takazumi Ishizu
IPC分类号： H01J37/32 , H01L21/3213 , H01L21/00
CPC分类号： H01J37/32477 , C23F4/00 , H01J37/32192 , H01L21/32136
摘要： Provided is a method of processing a sample by generating plasma by an electromagnetic wave, wherein a material containing carbon, such as silicon carbide (Sic), is disposed in a vacuum container serving as a discharge region. The inside of an etching chamber is cleaned by O.sub.2 cleaning treatment by using a sheet type dry etching apparatus, and after an inner wall temperature of the etching chamber is set and controlled, a sample is conveyed into the etching chamber, and a TiN cap layer, an Al--Cu alloy layer and a TiN barrier layer are plasma-etched in order by using BCl.sub.3 /Cl.sub.2 /CH.sub.4 /Ar gases with the pattern of a resist film as a mask.
摘要翻译：提供了一种通过电磁波产生等离子体来处理样品的方法，其中在用作放电区域的真空容器中设置含有碳的材料，例如碳化硅（Sic）。通过使用片式干蚀刻装置通过O 2清洗处理来清洁蚀刻室的内部，并且在设置和控制蚀刻室的内壁温度之后，将样品输送到蚀刻室中，并且将TiN盖层，通过使用具有抗蚀剂膜的图案的BCl 3 / Cl 2 / CH 4 / Ar气体作为掩模，依次等离子体蚀刻Al-Cu合金层和TiN阻挡层。

5. 发明申请

US20070181254A1 Plasma processing apparatus with resonance countermeasure function 审中-公开
标题翻译：具有共振对策功能的等离子体处理装置
公开(公告)号：US20070181254A1
公开(公告)日：2007-08-09
申请号：US11362177
申请日：2006-02-27
申请人： Tsutomu Iida , Ryoji Nishio , Yutaka Omoto , Masahiro Sumiya
发明人： Tsutomu Iida , Ryoji Nishio , Yutaka Omoto , Masahiro Sumiya
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32183 , H01J37/32082
摘要： A plasma processing apparatus has a processing chamber connected to an exhaust system so that the inside pressure can be reduced, a gas feeding unit for supplying gas to the processing chamber, a wafer, and a substrate electrode on which the wafer can be placed. The plasma processing apparatus also has an antenna electrode provided in opposition to the substrate electrode to generate plasma, a plasma generating high-frequency power supply connected to the antenna electrode, and a wafer biasing power supply connected to the substrate electrode. In addition, a coaxial line and a coaxial waveguide are optimized by using a coaxial model, and a voltage measuring circuit is mounted right under the coaxial line.
摘要翻译：等离子体处理装置具有连接到排气系统的处理室，从而可以减小内部压力，用于向处理室供应气体的气体供给单元，晶片和可以放置晶片的基板电极。等离子体处理装置还具有与基板电极相对设置的天线电极以产生等离子体，连接到天线电极的等离子体产生高频电源以及连接到基板电极的晶片偏置电源。另外，同轴线和同轴波导通过使用同轴型号进行优化，电压测量电路安装在同轴线的正下方。

6. 发明申请

US20140001154A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20140001154A1
公开(公告)日：2014-01-02
申请号：US13602421
申请日：2012-09-04
申请人： Kohei Sato , Kazunori Nakamoto , Yutaka Omoto
发明人： Kohei Sato , Kazunori Nakamoto , Yutaka Omoto
IPC分类号： H01L21/3065 , C23F1/00 , C23F1/08
CPC分类号： H01L21/67069 , H01J37/32577 , H01J37/32697 , H01J37/32715 , H01J37/32724 , H01L21/6833
摘要： In a plasma processing apparatus including a processing room disposed in a vacuum vessel, a sample stage located in the processing room, a dielectric film disposed on the top surface of the sample stage and serving as the sample mounting surface of the sample stage, and a plurality of electrodes embedded in the dielectric film for chucking the sample to the dielectric film when supplied with electric power, a part of the sample is chucked by supplying electric power to at least one of the electrodes while the sample is mounted on the sample stage; the sample is heated up to a predetermined temperature; a larger part of the sample is chucked by supplying electric power to the other of the electrodes; and the processing of the sample using the plasma is initiated.
摘要翻译：在包括设置在真空容器中的处理室的等离子体处理装置中，位于处理室中的样品台，设置在样品台的顶表面上并用作样品台的样品安装表面的电介质膜，以及多个电极嵌入在电介质膜中，用于在供电时将样品夹持到电介质膜上，一部分样品通过在将样品安装在样品台上时向至少一个电极供电来夹持; 将样品加热至预定温度; 通过向另一个电极提供电力来吸收较大部分的样品; 并且开始使用等离子体的样品的处理。

7. 发明授权

US06624084B2 Plasma processing equipment and plasma processing method using the same 失效
标题翻译：等离子体处理设备和等离子体处理方法使用相同
公开(公告)号：US06624084B2
公开(公告)日：2003-09-23
申请号：US09741996
申请日：2000-12-22
申请人： Kenji Maeda , Yutaka Omoto , Ichiro Sasaki , Hironobu Kawahara
发明人： Kenji Maeda , Yutaka Omoto , Ichiro Sasaki , Hironobu Kawahara
IPC分类号： H01L2100
CPC分类号： H01J37/32082 , H01J37/32623 , H01J37/32697
摘要： In plasma processing equipment having a vacuum processing chamber, a plasma generation means, a stage for loading a wafer to be processed in the vacuum processing chamber, an opposing electrode having an area almost equal to or wider than the aforementioned wafer which is installed opposite to the stage, and a bias power source for applying a high frequency bias to the wafer, a current path correction means is provided for correcting the current path part in the neighborhood of the outer periphery of the wafer among the high frequency current paths produced by the high frequency bias so as to be directed toward the wafer opposing surface of the opposing electrode.
摘要翻译：在具有真空处理室的等离子体处理设备中，等离子体产生装置，用于在真空处理室中装载待处理的晶片的阶段，具有几乎等于或大于上述晶片的面积的对置电极，该级和用于向晶片施加高频偏压的偏压电源，提供电流路径校正装置，用于校正由该晶体管产生的高频电流路径中的晶片外周附近的电流路径部分高频偏压以指向相对电极的晶片相对表面。

8. 发明授权

US4631106A Plasma processor 失效
标题翻译：等离子处理器
公开(公告)号：US4631106A
公开(公告)日：1986-12-23
申请号：US777725
申请日：1985-09-19
申请人： Norio Nakazato , Yutaka Kakehi , Takeshi Harada , Ryoji Fukuyama , Makoto Nawata , Hironobu Ueda , Yutaka Omoto , Katsuaki Nagatomo , Fumio Shibata
发明人： Norio Nakazato , Yutaka Kakehi , Takeshi Harada , Ryoji Fukuyama , Makoto Nawata , Hironobu Ueda , Yutaka Omoto , Katsuaki Nagatomo , Fumio Shibata
IPC分类号： H01J37/32 , H01J37/34 , H01L21/306 , B44C1/22 , C03C15/00 , C23F1/00
CPC分类号： H01J37/32623 , H01J37/3266 , H01J37/3402
摘要： The present invention relates to a plasma processor, and the plasma processor comprises a processing chamber, means to reduce a pressure in the processing chamber so as to evacuate the interior thereof, means to introduce a processing gas into the processing chamber, means to generate an electric field within the processing chamber, and means to establish a magnetic field orthogonal to the electric field, this means being rotatable relative to a surface to-be-processed of a sample which is processed in a plasma arising under the action of the electric field and the magnetic field, whereby a space required for the movement of the means to establish the magnetic field orthogonal to the electric field can be reduced to miniaturize the processor, and the uniform processing of the sample can be attained using rotatable plasma.
摘要翻译：等离子体处理器技术领域本发明涉及等离子体处理器，等离子体处理器包括处理室，用于减小处理室中的压力以便将其内部排出的装置，用于将处理气体引入处理室的装置，处理室内的电场，以及建立与电场正交的磁场的装置，该装置可相对于在电场作用下产生的等离子体中处理的样品的待处理表面旋转。和磁场，由此可以减少用于建立与电场正交的磁场的装置移动所需的空间，以使处理器小型化，并且可以使用可旋转等离子体来获得样品的均匀处理。

9. 发明授权

US08920665B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08920665B2
公开(公告)日：2014-12-30
申请号：US13602421
申请日：2012-09-04
申请人： Kohei Sato , Kazunori Nakamoto , Yutaka Omoto
发明人： Kohei Sato , Kazunori Nakamoto , Yutaka Omoto
IPC分类号： H01L21/3065 , C23F1/00 , C23F1/08
CPC分类号： H01L21/67069 , H01J37/32577 , H01J37/32697 , H01J37/32715 , H01J37/32724 , H01L21/6833
摘要： In a plasma processing apparatus including a processing room disposed in a vacuum vessel, a sample stage located in the processing room, a dielectric film disposed on the top surface of the sample stage and serving as the sample mounting surface of the sample stage, and a plurality of electrodes embedded in the dielectric film for chucking the sample to the dielectric film when supplied with electric power, a part of the sample is chucked by supplying electric power to at least one of the electrodes while the sample is mounted on the sample stage; the sample is heated up to a predetermined temperature; a larger part of the sample is chucked by supplying electric power to the other of the electrodes; and the processing of the sample using the plasma is initiated.
摘要翻译：在包括设置在真空容器中的处理室的等离子体处理装置中，位于处理室中的样品台，设置在样品台的顶表面上并用作样品台的样品安装表面的电介质膜，以及多个电极嵌入在电介质膜中，用于在供电时将样品夹持到电介质膜上，一部分样品通过在将样品安装在样品台上时向至少一个电极供电来夹持; 将样品加热至预定温度; 通过向另一个电极提供电力来吸收较大部分的样品; 并且开始使用等离子体的样品的处理。

10. 发明授权

US4943361A Plasma treating method and apparatus therefor 失效
标题翻译：等离子体处理方法及其设备
公开(公告)号：US4943361A
公开(公告)日：1990-07-24
申请号：US289512
申请日：1988-12-27
申请人： Yutaka Kakehi , Yutaka Omoto , Takeshi Harada
发明人： Yutaka Kakehi , Yutaka Omoto , Takeshi Harada
IPC分类号： H01L21/302 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/32082 , H01J37/32623 , H01J37/3266
摘要： The present invention relates to a plasma treating method and apparatus therefor, wherein a plasma treating method is carried out in which an electric field is generated between the electrodes of parallel plate electrodes (anode and cathode), and a magnetic field starting from the anode side, toward the cathode side, the other of said parallel plate electrodes, and back to the anode side, is used. The magnetic field has relatively short lines of magnetic force where it orthogonally intersects the electric field, near the cathode, as compared to that of lines of magnetic force parallel to the electric field, so as to make a cycloidal motion of electrons restricted and to cause mainly a cyclotronic motion of electrons to occur in large quantities. A power supply is connected to the cathode, one of said parallel plate electrodes, and a magnetic field generating means is provided on the anode side, the other of said parallel plate electrodes, at the counter-cathode side thereof, the said magnetic field generating means having NS poles in proximity to each other to provide the previously discussed magnetic lines of force, so as to make the cycloidal motion of electrons restricted and to cause the cyclotronic motion of electrons to occur in large quantities. By use of such method and apparatus, it is made possible to facilitate a treatment of a specimen at a high rate and uniformly without damaging the specimen.
摘要翻译：等离子体处理方法及其设备技术领域本发明涉及一种等离子体处理方法及其设备，其中进行在平行板电极（阳极和阴极）的电极之间产生电场的等离子体处理方法和从阳极侧开始的磁场，朝向阴极侧，使用另一个所述平行板电极，并且返回到阳极侧。与平行于电场的磁力线相比，磁场具有相对短的磁力线，其与阴极附近的电场正交相交，从而使电子的摆线运动受到限制，并导致主要是电子发生大量的自旋运动。电源连接到阴极，所述平行板电极之一和磁场产生装置设置在阳极侧，另一个平行板电极在其反向阴极侧产生所述磁场产生意味着具有彼此接近的NS极以提供先前讨论的磁力线，以便使电子的摆线运动受到限制并且引起电子的大量循环运动。通过使用这种方法和装置，能够以高速率和均匀的方式促进样品的处理，而不会损害试样。

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