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1. 发明申请

US20060289901A1 Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices 有权
标题翻译：基于氮化物和碳化硅的集成器件以及制造基于氮化物的集成器件的方法
公开(公告)号：US20060289901A1
公开(公告)日：2006-12-28
申请号：US11410768
申请日：2006-04-25
申请人： Scott Sheppard , Adam Saxler , Thomas Smith
发明人： Scott Sheppard , Adam Saxler , Thomas Smith
IPC分类号： H01L29/80 , H01L21/338
CPC分类号： H03H9/0542 , H01L27/20 , H03H3/08 , H03H9/02228 , H03H9/02574 , H03H9/02976
摘要： A monolithic electronic device includes a first nitride epitaxial structure including a plurality of nitride epitaxial layers. The plurality of nitride epitaxial layers include at least one common nitride epitaxial layer. A second nitride epitaxial structure is on the common nitride epitaxial layer of the first nitride epitaxial structure. A first plurality of electrical contacts is on the first epitaxial nitride structure and defines a first electronic device in the first nitride epitaxial structure. A second plurality of electrical contacts is on the first epitaxial nitride structure and defines a second electronic device in the second nitride epitaxial structure. A monolithic electronic device includes a bulk semi-insulating silicon carbide substrate having implanted source and drain regions and an implanted channel region between the source and drain regions, and a nitride epitaxial structure on the surface of the silicon carbide substrate. Corresponding methods are also disclosed.
摘要翻译：单片电子器件包括包括多个氮化物外延层的第一氮化物外延结构。多个氮化物外延层包括至少一个共同的氮化物外延层。第二氮化物外延结构在第一氮化物外延结构的公共氮化物外延层上。第一多个电触点在第一外延氮化物结构上，并且限定第一氮化物外延结构中的第一电子器件。第二多个电触点位于第一外延氮化物结构上，并且在第二氮化物外延结构中限定第二电子器件。单片电子器件包括具有注入的源极和漏极区域以及源极和漏极区域之间的注入沟道区域的半体绝缘碳化硅衬底和在碳化硅衬底的表面上的氮化物外延结构。还公开了相应的方法。

2. 发明申请

US20070158683A1 Semiconductor devices including implanted regions and protective layers and methods of forming the same 有权
标题翻译：包括注入区域和保护层的半导体器件及其形成方法
公开(公告)号：US20070158683A1
公开(公告)日：2007-07-12
申请号：US11302062
申请日：2005-12-13
申请人： Scott Sheppard , Adam Saxler
发明人： Scott Sheppard , Adam Saxler
IPC分类号： H01L29/732
CPC分类号： H01L29/7787 , H01L21/046 , H01L21/26553 , H01L29/1608 , H01L29/2003 , H01L29/66068 , H01L29/66462
摘要： Methods of forming a semiconductor device include forming a protective layer on a semiconductor layer, implanting ions having a first conductivity type through the protective layer into the semiconductor layer to form an implanted region of the semiconductor layer, and annealing the semiconductor layer and the protective layer to activate the implanted ions. An opening is formed in the protective layer to expose the implanted region of the semiconductor layer, and an electrode is formed in the opening. A semiconductor structure includes a Group III-nitride semiconductor layer, a protective layer on the semiconductor layer, a distribution of implanted dopants within the semiconductor layer, and an ohmic contact extending through the protective layer to the semiconductor layer.
摘要翻译：形成半导体器件的方法包括在半导体层上形成保护层，通过保护层将具有第一导电类型的离子注入到半导体层中以形成半导体层的注入区域，以及退火半导体层和保护层以激活注入的离子。在保护层中形成开口以露出半导体层的注入区域，并且在开口中形成电极。半导体结构包括III族氮化物半导体层，半导体层上的保护层，半导体层内注入的掺杂剂的分布以及延伸穿过保护层到半导体层的欧姆接触。

3. 发明申请

US20060226412A1 Thick semi-insulating or insulating epitaxial gallium nitride layers and devices incorporating same 有权
标题翻译：厚半绝缘或绝缘外延氮化镓层和结合其的器件
公开(公告)号：US20060226412A1
公开(公告)日：2006-10-12
申请号：US11103117
申请日：2005-04-11
申请人： Adam Saxler , Yifeng Wu , Primit Parikh , Umesh Mishra , Richard Smith , Scott Sheppard
发明人： Adam Saxler , Yifeng Wu , Primit Parikh , Umesh Mishra , Richard Smith , Scott Sheppard
IPC分类号： H01L29/06
CPC分类号： H01L21/0254 , H01L21/0237 , H01L21/02425 , H01L21/02439 , H01L21/02491 , H01L21/02581 , H01L21/0262 , H01L29/1608 , H01L29/2003 , H01L29/4175 , H01L29/41766 , H01L29/66462 , H01L29/7787
摘要： Semiconductor device structures and methods of fabricating semiconductor devices structures are provided that include a semi-insulating or insulating GaN epitaxial layer on a conductive semiconductor substrate and/or a conductive layer. The semi-insulating or insulating GaN epitaxial layer has a thickness of at least about 4 μm. GaN semiconductor device structures and methods of fabricating GaN semiconductor device structures are also provided that include an electrically conductive SiC substrate and an insulating or semi-insulating GaN epitaxial layer on the conductive SiC substrate. The GaN epitaxial layer has a thickness of at least about 4 μm. GaN semiconductor device structures and methods of fabricating GaN semiconductor device structures are also provided that include an electrically conductive GaN substrate, an insulating or semi-insulating GaN epitaxial layer on the conductive GaN substrate, a GaN based semiconductor device on the GaN epitaxial layer and a via hole and corresponding via metal in the via hole that extends through layers of the GaN based semiconductor device and the GaN epitaxial layer.
摘要翻译：提供半导体器件结构和制造半导体器件结构的方法，其包括在导电半导体衬底和/或导电层上的半绝缘或绝缘GaN外延层。半绝缘或绝缘GaN外延层具有至少约4μm的厚度。还提供GaN半导体器件结构和制造GaN半导体器件结构的方法，其包括在导电SiC衬底上的导电SiC衬底和绝缘或半绝缘GaN外延层。 GaN外延层具有至少约4μm的厚度。还提供GaN半导体器件结构和制造GaN半导体器件结构的方法，其包括导电GaN衬底，导电GaN衬底上的绝缘或半绝缘GaN外延层，GaN外延层上的GaN基半导体器件和通孔和通孔中相应的通孔金属延伸穿过GaN基半导体器件和GaN外延层的层。

4. 发明申请

US20060017064A1 Nitride-based transistors having laterally grown active region and methods of fabricating same 审中-公开
公开(公告)号：US20060017064A1
公开(公告)日：2006-01-26
申请号：US10899215
申请日：2004-07-26
申请人： Adam Saxler , Scott Sheppard , Richard Smith
发明人： Adam Saxler , Scott Sheppard , Richard Smith
IPC分类号： H01L29/739
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/66462
摘要： High electron mobility transistors and/or methods of fabricating high electron mobility transistors that include a first Group III-nitride layer having vertically grown regions, laterally grown regions and a coalescence region are provided. A Group III-nitride channel layer is provided on the first Group III-nitride layer and a Group III-nitride barrier layer is provided on the Group III-nitride channel layer. A drain contact, a source contact and a gate contact are provided on the barrier layer. The gate contact is disposed on a portion of the barrier layer on a laterally grown region of the first Group III-nitride layer and at least a portion of one of the source contact and/or the drain contact is disposed on a portion of the barrier layer on a vertically grown region of the first Group III-nitride layer.

5. 发明申请

US20060108606A1 Cap layers and/or passivation layers for nitride-based transistors, transistor structures and methods of fabricating same 有权
标题翻译：用于氮化物基晶体管的盖层和/或钝化层，晶体管结构及其制造方法
公开(公告)号：US20060108606A1
公开(公告)日：2006-05-25
申请号：US10996249
申请日：2004-11-23
申请人： Adam Saxler , Scott Sheppard , Richard Smith
发明人： Adam Saxler , Scott Sheppard , Richard Smith
IPC分类号： H01L31/109
CPC分类号： H01L29/66462 , H01L21/0237 , H01L21/02378 , H01L21/0254 , H01L21/02584 , H01L21/318 , H01L23/291 , H01L23/3171 , H01L29/2003 , H01L29/7787 , H01L2924/0002 , H01L2924/00
摘要： High electron mobility transistors are provided that include a non-uniform aluminum concentration AlGaN based cap layer having a high aluminum concentration adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. High electron mobility transistors are provided that include a cap layer having a doped region adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. Graphitic BN passivation structures for wide bandgap semiconductor devices are provided. SiC passivation structures for Group III-nitride semiconductor devices are provided. Oxygen anneals of passivation structures are also provided. Ohmic contacts without a recess are also provided.
摘要翻译：提供了高电子迁移率晶体管，其包括与盖层的表面相邻的具有高铝浓度的不均匀的铝浓度的AlGaN基覆盖层，其远离设置有盖层的阻挡层。提供了高电子迁移率晶体管，其包括具有邻近盖层的表面的掺杂区域的帽层，其远离其上设置盖层的阻挡层。提供了宽带隙半导体器件的石墨BN钝化结构。提供了III族氮化物半导体器件的SiC钝化结构。还提供了钝化结构的氧气退火。还提供了没有凹槽的欧姆接触。

6. 发明申请

US20060006435A1 Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses 有权
公开(公告)号：US20060006435A1
公开(公告)日：2006-01-12
申请号：US11221343
申请日：2005-09-07
申请人： Adam Saxler , Richard Smith , Scott Sheppard
发明人： Adam Saxler , Richard Smith , Scott Sheppard
IPC分类号： H01L29/76
CPC分类号： H01L29/66462 , H01L29/2003 , H01L29/7787
摘要： Contacts for a nitride based transistor and methods of fabricating such contacts provide a recess through a regrowth process. The contacts are formed in the recess. The regrowth process includes fabricating a first cap layer comprising a Group III-nitride semiconductor material. A mask is fabricated and patterned on the first cap layer. The pattern of the mask corresponds to the pattern of the recesses for the contacts. A second cap layer comprising a Group III-nitride semiconductor material is selectively fabricated (e.g. grown) on the first cap layer utilizing the patterned mask. Additional layers may also be formed on the second cap layer. The mask may be removed to provide recess(es) to the first cap layer, and contact(s) may be formed in the recess(es). Alternatively, the mask may comprise a conductive material upon which a contact may be formed, and may not require removal.

7. 发明申请

US20070164315A1 Cap Layers Including Aluminum Nitride for Nitride-Based Transistors and Methods of Fabricating Same 有权
标题翻译：包括用于氮化物的晶体管的氮化铝的盖层及其制造方法
公开(公告)号：US20070164315A1
公开(公告)日：2007-07-19
申请号：US11684747
申请日：2007-03-12
申请人： Richard Smith , Adam Saxler , Scott Sheppard
发明人： Richard Smith , Adam Saxler , Scott Sheppard
IPC分类号： H01L29/739 , H01L31/00
CPC分类号： H01L29/66462 , H01L21/318 , H01L23/291 , H01L23/3171 , H01L29/2003 , H01L29/7786 , H01L29/7787 , H01L2924/0002 , H01L2924/00
摘要： High electron mobility transistors are provided that include a non-uniform aluminum concentration AlGaN based cap layer having a high aluminum concentration adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. High electron mobility transistors are provided that include a cap layer having a doped region adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. Graphitic BN passivation structures for wide bandgap semiconductor devices are provided. SiC passivation structures for Group III-nitride semiconductor devices are provided. Oxygen anneals of passivation structures are also provided. Ohmic contacts without a recess are also provided.
摘要翻译：提供了高电子迁移率晶体管，其包括与盖层的表面相邻的具有高铝浓度的不均匀的铝浓度的AlGaN基覆盖层，其远离设置有盖层的阻挡层。提供了高电子迁移率晶体管，其包括具有邻近盖层的表面的掺杂区域的帽层，其远离其上设置盖层的阻挡层。提供了宽带隙半导体器件的石墨BN钝化结构。提供了III族氮化物半导体器件的SiC钝化结构。还提供了钝化结构的氧气退火。还提供了没有凹槽的欧姆接触。

8. 发明申请

US20060208280A1 Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions 有权
标题翻译：能耐受高温反向偏压测试条件的III类氮化物场效应晶体管（FETS）
公开(公告)号：US20060208280A1
公开(公告)日：2006-09-21
申请号：US11080905
申请日：2005-03-15
申请人： Richard Smith , Scott Sheppard , Adam Saxler , Yifeng Wu
发明人： Richard Smith , Scott Sheppard , Adam Saxler , Yifeng Wu
IPC分类号： H01L29/739
CPC分类号： H01L27/0605 , H01L29/2003 , H01L29/207 , H01L29/42316 , H01L29/7787
摘要： Group III Nitride based field effect transistor (FETS) are provided having a power degradation of less than about 3.0 dB when operated at a drain-to-source voltage (VDS) of about 56 volts, a gate to source voltage (Vgs) of from about −8 to about −14 volts and a temperature of about 140 ° C. for at least about 10 hours.
摘要翻译：提供基于III族氮化物的场效应晶体管（FETS），其在约56伏的漏极 - 源极电压（V SUB DS）下操作时具有小于约3.0dB的功率劣化，栅极至约-14伏特的电源电压（V S）和约140℃的温度至少约10小时。

9. 发明授权

US08946777B2 Nitride-based transistors having laterally grown active region and methods of fabricating same 有权
标题翻译：具有横向增长的有源区的氮化物基晶体管及其制造方法
公开(公告)号：US08946777B2
公开(公告)日：2015-02-03
申请号：US12564473
申请日：2009-09-22
申请人： Adam William Saxler , Scott Sheppard , Richard Peter Smith
发明人： Adam William Saxler , Scott Sheppard , Richard Peter Smith
IPC分类号： H01L31/0328 , H01L29/778 , H01L29/66 , H01L29/20
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/66462
摘要： High electron mobility transistors and/or methods of fabricating high electron mobility transistors that include a first Group III-nitride layer having vertically grown regions, laterally grown regions and a coalescence region are provided. A Group III-nitride channel layer is provided on the first Group III-nitride layer and a Group III-nitride barrier layer is provided on the Group III-nitride channel layer. A drain contact, a source contact and a gate contact are provided on the barrier layer. The gate contact is disposed on a portion of the barrier layer on a laterally grown region of the first Group III-nitride layer and at least a portion of one of the source contact and/or the drain contact is disposed on a portion of the barrier layer on a vertically grown region of the first Group III-nitride layer.
摘要翻译：提供了高电子迁移率晶体管和/或制造高电子迁移率晶体管的方法，其包括具有垂直生长区域，横向生长区域和聚结区域的第一III族氮化物层。 III族氮化物沟道层设置在第一III族氮化物层上，III族氮化物阻挡层设置在III族氮化物沟道层上。漏极接触，源极接触和栅极接触设置在阻挡层上。栅极触点设置在第一III族氮化物层的横向生长区域上的阻挡层的一部分上，并且源极接触和/或漏极接触中的一个的至少一部分设置在屏障的一部分上在第一III族氮化物层的垂直生长区上。

10. 发明申请

US20120119260A1 Methods of Forming Semiconductor Contacts and Related Semiconductor Devices 有权
标题翻译：形成半导体触点和相关半导体器件的方法
公开(公告)号：US20120119260A1
公开(公告)日：2012-05-17
申请号：US12879398
申请日：2010-09-10
申请人： Fabian Radulescu , Jennifer Gao , Jennifer Duc , Scott Sheppard
发明人： Fabian Radulescu , Jennifer Gao , Jennifer Duc , Scott Sheppard
IPC分类号： H01L29/778 , H01L21/306 , H01L21/338
CPC分类号： H01L29/7786 , H01L21/28593 , H01L21/76804 , H01L29/1608 , H01L29/2003 , H01L29/42316 , H01L29/475 , H01L29/66462 , H01L29/66871 , H01L29/812 , H01L29/872
摘要： Methods of forming semiconductor devices having customized contacts are provided including providing a first insulator layer and patterning the first insulator layer such that the first insulator layer defines at least one contact window. A second insulator layer is provided on the first insulator layer and in the at least one contact window such that the second insulator layer at least partially fills the at least one contact window. A first portion of the second insulator layer is etched such that a second portion of the second insulator layer remains in the at least one contact window to provide at least one modified contact window having dimensions that are different than dimensions of the at least one contact window. Related methods and devices are also provided.
摘要翻译：提供了形成具有定制触点的半导体器件的方法，包括提供第一绝缘体层和图案化第一绝缘体层，使得第一绝缘体层限定至少一个接触窗口。第二绝缘体层设置在第一绝缘体层上和在至少一个接触窗口中，使得第二绝缘体层至少部分地填充至少一个接触窗口。蚀刻第二绝缘体层的第一部分，使得第二绝缘体层的第二部分保留在至少一个接触窗口中，以提供具有不同于至少一个接触窗口的尺寸的尺寸的至少一个修改的接触窗口。还提供了相关的方法和装置。

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