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    • 7. 发明申请
    • HIGH VOLTAGE GaN TRANSISTORS
    • 高电压GaN晶体管
    • US20110114997A1
    • 2011-05-19
    • US13014619
    • 2011-01-26
    • YIFENG WUPrimit ParikhUmesh Mishra
    • YIFENG WUPrimit ParikhUmesh Mishra
    • H01L29/778
    • H01L29/7787H01L29/2003H01L29/404H01L29/66462H01L29/7786
    • A multiple field plate transistor includes an active region, with a source, a drain, and a gate. A first spacer layer is over the active region between the source and the gate and a second spacer layer over the active region between the drain and the gate. A first field plate on the first spacer layer is connected to the gate. A second field plate on the second spacer layer is connected to the gate. A third spacer layer is on the first spacer layer, the second spacer layer, the first field plate, the gate, and the second field plate, with a third field plate on the third spacer layer and connected to the source. The transistor exhibits a blocking voltage of at least 600 Volts while supporting a current of at least 2 Amps with an on resistance of no more than 5.0 mΩ-cm2, of at least 600 Volts while supporting a current of at least 3 Amps with an on resistance of no more than 5.3 mΩ-cm2, of at least 900 Volts while supporting a current of at least 2 Amps with an on resistance of no more than 6.6 mΩ-cm2, or a blocking voltage of at least 900 Volts while supporting a current of at least 3 Amps with an on resistance of no more than 7.0 mΩ-cm2.
    • 多场板晶体管包括有源区,源极,漏极和栅极。 第一间隔层在源极和栅极之间的有源区上方,并且在漏极和栅极之间的有源区上方具有第二间隔层。 第一间隔层上的第一场板连接到栅极。 第二间隔层上的第二场板连接到栅极。 第三间隔层位于第一间隔层,第二间隔层,第一场板,栅极和第二场板上,在第三间隔层上具有第三场板并连接到源极。 晶体管表现出至少600伏特的阻断电压,同时支持至少2安培的电流,其导通电阻不超过5.0mΩ(OHgr·-cm2)为至少600伏,同时支持至少3安培的电流 耐电压不超过5.3mΩ,OHgr--cm2,至少900V,同时支持至少2安培的电流,导通电阻不超过6.6mΩ,OHgr-cm2,或阻断电压至少为900V,同时 支持至少3安培的电流,导通电阻不超过7.0mΩ,OHgr; -cm2。