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1. 发明授权

US09040398B2 Method of fabricating seminconductor devices including self aligned refractory contacts 有权
$Method of fabricating seminconductor devices including self aligned refractory contacts$
标题翻译：制造半导体器件的方法，包括自对准耐火接点
公开(公告)号：US09040398B2
公开(公告)日：2015-05-26
申请号：US11434853
申请日：2006-05-16
申请人： Adam William Saxler , Scott Sheppard
发明人： Adam William Saxler , Scott Sheppard
IPC分类号： H01L21/265 , H01L29/778 , H01L29/66 , H01L29/20
CPC分类号： H01L29/7787 , H01L21/3245 , H01L29/2003 , H01L29/66462
摘要： Methods of forming semiconductor devices are provided by forming a semiconductor layer on a semiconductor substrate. A mask is formed on the semiconductor layer. Ions having a first conductivity type are implanted into the semiconductor layer according to the mask to form implanted regions on the semiconductor layer. Metal layers are formed on the implanted regions according to the mask. The implanted regions and the metal layers are annealed in a single step to respectively activate the implanted ions in the implanted regions and provide ohmic contacts on the implanted regions. Related devices are also provided.
摘要翻译：通过在半导体衬底上形成半导体层来提供形成半导体器件的方法。在半导体层上形成掩模。具有第一导电类型的离子根据掩模注入到半导体层中，以在半导体层上形成注入区域。根据掩模在注入区域上形成金属层。注入区域和金属层在单个步骤中退火以分别激活注入区域中的注入离子并在注入区域上提供欧姆接触。还提供了相关设备。

2. 发明授权

US07875914B2 Switch mode power amplifier using mis-HEMT with field plate extension 有权
标题翻译：开关模式功率放大器使用带有场板扩展的误差HEMT
公开(公告)号：US07875914B2
公开(公告)日：2011-01-25
申请号：US12474570
申请日：2009-05-29
申请人： Scott Sheppard
发明人： Scott Sheppard
IPC分类号： H01L29/72
CPC分类号： H01L29/7787 , H01L21/28264 , H01L29/2003 , H01L29/267 , H01L29/402 , H01L29/42368 , H01L29/42376 , H01L29/513 , H01L29/518 , H03F3/189 , H03F3/217 , H03F3/2176
摘要： Disclosed are a switch mode power amplifier and a field effect transistor especially suitable for use in a switch mode power amplifier. The transistor is preferably a compound high electron mobility transistor (HEMT) having a source terminal and a drain terminal with a gate terminal therebetween and positioned on a dielectric material. A field plate extends from the gate terminal over at least two layers of dielectric material towards the drain. The dielectric layers preferably comprise silicon oxide and silicon nitride. A third layer of silicon oxide can be provided with the layer of silicon nitride being positioned between layers of silicon oxide. Etch selectivity is utilized in etching recesses for the gate terminal.
摘要翻译：公开了特别适用于开关模式功率放大器的开关模式功率放大器和场效应晶体管。晶体管优选为具有源极端子和漏极端子的复合高电子迁移率晶体管（HEMT），栅极端子位于其间并位于电介质材料上。场板从栅极端子延伸至少两层电介质材料朝向漏极。电介质层优选包括氧化硅和氮化硅。可以提供第三层氧化硅层，该氮化硅层位于氧化硅层之间。蚀刻选择性用于栅极端子的蚀刻凹槽。

3. 发明授权

US07801130B2 Methods, systems and computer program products for integrating network traffic 失效
标题翻译：用于整合网络流量的方法，系统和计算机程序产品
公开(公告)号：US07801130B2
公开(公告)日：2010-09-21
申请号：US11700311
申请日：2007-01-31
申请人： Scott Sheppard , Roy Mongiovi
发明人： Scott Sheppard , Roy Mongiovi
IPC分类号： H04L12/28
CPC分类号： H04L45/50 , H04L45/02 , H04L45/04 , H04L45/54
摘要： Methods, systems and computer program products for integrating data in a communications network received at provider (P) routers from provider edge (PE) routers having a plurality of different configurations are provided. Global collection and export parameters for the P routers are configured. A collector associated with the P routers is configured to maintain a netflow exported data table for the P routers based on the global collection and export parameters received from the P routers. P router text files are configured. The P router text files identify all P routers associated with the collector using Internet protocol (IP) addresses associated with each of the P routers. A destination PE router is located for a selected P router based on IP addresses in the P router text file associated with the selected P router such that the interface IP address of the selected P router is matched with the open shortest path first (OSPF) router identification of the destination PE router.
摘要翻译：提供了用于将数据集成在从具有多个不同配置的提供商边缘（PE）路由器的提供商（P）路由器处接收的通信网络中的方法，系统和计算机程序产品。配置P路由器的全局收集和导出参数。与P路由器相关联的收集器被配置为基于从P路由器接收的全局收集和导出参数来维护P路由器的净流输出数据表。配置P路由器文本文件。 P路由器文本文件使用与每个P路由器相关联的因特网协议（IP）地址来标识与收集器相关联的所有P路由器。基于与所选P路由器相关联的P路由器文本文件中的IP地址，为所选择的P路由器定位目的地PE路由器，使得所选择的P路由器的接口IP地址与开放最短路径优先（OSPF）路由器匹配目的PE路由器的标识。

4. 发明申请

US20100161790A1 Lawful Intercept for Multiple Simultaneous Broadband Sessions 审中-公开
标题翻译：多个同时宽带会话的合法侦听
公开(公告)号：US20100161790A1
公开(公告)日：2010-06-24
申请号：US12342811
申请日：2008-12-23
申请人： Scott Sheppard
发明人： Scott Sheppard
IPC分类号： G06F15/16
CPC分类号： H04L63/1408 , H04L63/30 , H04M3/2281 , H04M7/006
摘要： Identifying information associated with a user under surveillance is received. A first intercept is provisioned on a first network element to intercept the data traffic according to the identifying information. A database is queried based on a login identifier associated with the user. A query result is received from the database. The query result may include a network element identifier and circuit information associate with the login identifier. A determination is made as to whether the network element identifier contained in the query result is the same as a network element identifier contained in information of record. In response to determining that the network element identifier contained in the query result is different from the network element identifier contained in the information of record, a second intercept is provisioned on a second network element to intercept the data traffic according to the network element identifier contained in the query result.
摘要翻译：收到与被监视用户相关联的信息的识别。在第一网络元件上设置第一截距，以根据识别信息拦截数据流量。基于与用户相关联的登录标识符查询数据库。从数据库接收查询结果。查询结果可以包括网络元素标识符和与登录标识符相关联的电路信息。确定包含在查询结果中的网元标识符是否与包含在记录信息中的网元标识符相同。响应于确定包含在查询结果中的网络元素标识符与包含在记录信息中的网络元素标识符不同，在第二网络元件上提供第二截距以根据包含的网络元素标识符截取数据业务在查询结果中。

5. 发明申请

US20100140664A1 Methods of Fabricating Nitride-Based Transistors with a Cap Layer and a Recessed Gate and Related Devices 有权
标题翻译：制造具有盖层和嵌入栅极和相关器件的氮化物基晶体管的方法
公开(公告)号：US20100140664A1
公开(公告)日：2010-06-10
申请号：US12685910
申请日：2010-01-12
申请人： Scott Sheppard , Richard Peter Smith
发明人： Scott Sheppard , Richard Peter Smith
IPC分类号： H01L29/778 , H01L21/335 , H01L21/20
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/41766 , H01L29/42316 , H01L29/4236 , H01L29/66431 , H01L29/66462 , H01L29/778 , H01L29/7786 , H01L2924/13064
摘要： An anneal of a gate recess prior to formation of a gate contact, such as a Schottky contact, may reduce gate leakage and/or provide a high quality gate contact in a semiconductor device, such as a transistor. The use of an encapsulation layer during the anneal may further reduce damage to the semiconductor in the gate recess of the transistor. The anneal may be provided, for example, by an anneal of ohmic contacts of the device. Thus, high quality gate and ohmic contacts may be provided with reduced degradation of the gate region that may result from providing a recessed gate structure as a result of etch damage in forming the recess.
摘要翻译：在形成诸如肖特基接触之类的栅极接触之前的栅极凹槽的退火可以减少栅极泄漏和/或在诸如晶体管的半导体器件中提供高质量的栅极接触。在退火期间使用封装层可以进一步降低对晶体管的栅极凹槽中的半导体的损坏。退火可以例如通过器件的欧姆接触的退火来提供。因此，可以提供高质量的栅极和欧姆接触，由于在形成凹槽时由于蚀刻损伤而提供凹陷的栅极结构可能导致栅极区域的降低。

6. 发明授权

US07678628B2 Methods of fabricating nitride-based transistors with a cap layer and a recessed gate 有权
标题翻译：制造具有盖层和凹入栅极的基于氮化物的晶体管的方法
公开(公告)号：US07678628B2
公开(公告)日：2010-03-16
申请号：US11810026
申请日：2007-06-04
申请人： Scott Sheppard , Richard Peter Smith
发明人： Scott Sheppard , Richard Peter Smith
IPC分类号： H01L21/338
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/41766 , H01L29/42316 , H01L29/4236 , H01L29/66431 , H01L29/66462 , H01L29/778 , H01L29/7786 , H01L2924/13064
摘要： An anneal of a gate recess prior to formation of a gate contact, such as a Schottky contact, may reduce gate leakage and/or provide a high quality gate contact in a semiconductor device, such as a transistor. The use of an encapsulation layer during the anneal may further reduce damage to the semiconductor in the gate recess of the transistor. The anneal may be provided, for example, by an anneal of ohmic contacts of the device. Thus, high quality gate and ohmic contacts may be provided with reduced degradation of the gate region that may result from providing a recessed gate structure as a result of etch damage in forming the recess.
摘要翻译：在形成诸如肖特基接触之类的栅极接触之前的栅极凹槽的退火可以减少栅极泄漏和/或在诸如晶体管的半导体器件中提供高质量的栅极接触。在退火期间使用封装层可以进一步降低对晶体管的栅极凹槽中的半导体的损坏。退火可以例如通过器件的欧姆接触的退火来提供。因此，可以提供高质量的栅极和欧姆接触，由于在形成凹槽时由于蚀刻损伤而提供凹陷的栅极结构可能导致栅极区域的降低。

7. 发明申请

US20090254651A1 VERIFYING A LAWFUL INTERCEPTION SYSTEM 有权
标题翻译：验证一个法律障碍系统
公开(公告)号：US20090254651A1
公开(公告)日：2009-10-08
申请号：US12062206
申请日：2008-04-03
申请人： Scott Sheppard
发明人： Scott Sheppard
IPC分类号： G06F15/16
CPC分类号： H04L63/30
摘要： Methods, systems, and computer-readable media provide for verifying a lawful interception system. A first file and a second file are received. The first file is formed by recording data traffic at a computer as the data traffic generated at the computer is transmitted from the computer to a remote network via a broadband remote access server (BRAS), saving the recorded data traffic as a first packet capture and flat file export (PCAP) file, and exporting packet summary lines from the first PCAP file. The second file is formed by intercepting the data traffic as the data traffic egresses from a mediation system to a law enforcement agency (LEA) system, saving the intercepted data traffic as a second PCAP file, and exporting packet summary lines from the second PCAP file. The first file is compared with the second file to verify an accuracy of the mediation system
摘要翻译：方法，系统和计算机可读介质提供了验证合法拦截系统。接收第一个文件和第二个文件。当计算机产生的数据业务经由宽带远程访问服务器（BRAS）从计算机发送到远程网络时，通过在计算机上记录数据流量来形成第一个文件，将记录的数据流量保存为第一分组捕获，平面文件导出（PCAP）文件，并从第一个PCAP文件导出数据包摘要行。第二个文件是通过在数据流量从中介系统向执法机构（LEA）系统出口时拦截数据流量形成的，将拦截的数据流量保存为第二个PCAP文件，并从第二个PCAP文件导出数据包摘要行。将第一个文件与第二个文件进行比较，以验证中介系统的准确性

8. 发明申请

US20080035934A1 Passivation of Wide Band-Gap Based Semiconductor Devices with Hydrogen-Free Sputtered Nitrides 有权
标题翻译：使用无氢溅射氮化物钝化宽带隙半导体器件
公开(公告)号：US20080035934A1
公开(公告)日：2008-02-14
申请号：US11845805
申请日：2007-08-28
申请人： Scott Sheppard , Richard Smith , Zoltan Ring
发明人： Scott Sheppard , Richard Smith , Zoltan Ring
IPC分类号： H01L29/15
CPC分类号： H01L29/66462 , H01L21/045 , H01L21/3145 , H01L21/318 , H01L21/3185 , H01L29/1608 , H01L29/2003 , H01L29/24 , H01L29/7787
摘要： An improved field effect transistor formed in the Group III nitride material system includes a two part structure in which a chemical vapor deposited passivation layer of silicon nitride encapsulates a previously sputtered-deposited layer of silicon nitride. The sputtered layer provides some of the benefits of passivation and the chemical vapor deposited layer provides an excellent environmental barrier.
摘要翻译：形成在III族氮化物材料体系中的改进的场效应晶体管包括二部分结构，其中氮化硅的化学气相沉积钝化层封装预先溅射的氮化硅层。溅射层提供了钝化的一些优点，并且化学气相沉积层提供了优异的环境屏障。

9. 发明申请

US20070158683A1 Semiconductor devices including implanted regions and protective layers and methods of forming the same 有权
标题翻译：包括注入区域和保护层的半导体器件及其形成方法
公开(公告)号：US20070158683A1
公开(公告)日：2007-07-12
申请号：US11302062
申请日：2005-12-13
申请人： Scott Sheppard , Adam Saxler
发明人： Scott Sheppard , Adam Saxler
IPC分类号： H01L29/732
CPC分类号： H01L29/7787 , H01L21/046 , H01L21/26553 , H01L29/1608 , H01L29/2003 , H01L29/66068 , H01L29/66462
摘要： Methods of forming a semiconductor device include forming a protective layer on a semiconductor layer, implanting ions having a first conductivity type through the protective layer into the semiconductor layer to form an implanted region of the semiconductor layer, and annealing the semiconductor layer and the protective layer to activate the implanted ions. An opening is formed in the protective layer to expose the implanted region of the semiconductor layer, and an electrode is formed in the opening. A semiconductor structure includes a Group III-nitride semiconductor layer, a protective layer on the semiconductor layer, a distribution of implanted dopants within the semiconductor layer, and an ohmic contact extending through the protective layer to the semiconductor layer.
摘要翻译：形成半导体器件的方法包括在半导体层上形成保护层，通过保护层将具有第一导电类型的离子注入到半导体层中以形成半导体层的注入区域，以及退火半导体层和保护层以激活注入的离子。在保护层中形成开口以露出半导体层的注入区域，并且在开口中形成电极。半导体结构包括III族氮化物半导体层，半导体层上的保护层，半导体层内注入的掺杂剂的分布以及延伸穿过保护层到半导体层的欧姆接触。

10. 发明申请

US20070118759A1 Undesirable email determination 审中-公开
标题翻译：不合需要的电子邮件确定
公开(公告)号：US20070118759A1
公开(公告)日：2007-05-24
申请号：US11245888
申请日：2005-10-07
申请人： Scott Sheppard
发明人： Scott Sheppard
IPC分类号： H04L9/32 , G06F11/30 , G06F12/14
CPC分类号： H04L63/145 , G06F21/552 , H04L51/12 , H04L51/28
摘要： Included is a method for preventing spam dissemination. The method can include monitoring an Internet communication by a user, determining whether the monitored Internet communication includes a spam-related communication, and determining whether the user is a probable victim by determining whether the user is communicating via an infected device.
摘要翻译：包括防止垃圾邮件传播的方法。该方法可以包括监视用户的因特网通信，确定所监视的因特网通信是否包括垃圾邮件相关通信，以及通过确定用户是否通过被感染的设备通信来确定用户是否是可能的受害者。

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