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1. 发明申请

US20060226412A1 Thick semi-insulating or insulating epitaxial gallium nitride layers and devices incorporating same 有权
标题翻译：厚半绝缘或绝缘外延氮化镓层和结合其的器件
公开(公告)号：US20060226412A1
公开(公告)日：2006-10-12
申请号：US11103117
申请日：2005-04-11
申请人： Adam Saxler , Yifeng Wu , Primit Parikh , Umesh Mishra , Richard Smith , Scott Sheppard
发明人： Adam Saxler , Yifeng Wu , Primit Parikh , Umesh Mishra , Richard Smith , Scott Sheppard
IPC分类号： H01L29/06
CPC分类号： H01L21/0254 , H01L21/0237 , H01L21/02425 , H01L21/02439 , H01L21/02491 , H01L21/02581 , H01L21/0262 , H01L29/1608 , H01L29/2003 , H01L29/4175 , H01L29/41766 , H01L29/66462 , H01L29/7787
摘要： Semiconductor device structures and methods of fabricating semiconductor devices structures are provided that include a semi-insulating or insulating GaN epitaxial layer on a conductive semiconductor substrate and/or a conductive layer. The semi-insulating or insulating GaN epitaxial layer has a thickness of at least about 4 μm. GaN semiconductor device structures and methods of fabricating GaN semiconductor device structures are also provided that include an electrically conductive SiC substrate and an insulating or semi-insulating GaN epitaxial layer on the conductive SiC substrate. The GaN epitaxial layer has a thickness of at least about 4 μm. GaN semiconductor device structures and methods of fabricating GaN semiconductor device structures are also provided that include an electrically conductive GaN substrate, an insulating or semi-insulating GaN epitaxial layer on the conductive GaN substrate, a GaN based semiconductor device on the GaN epitaxial layer and a via hole and corresponding via metal in the via hole that extends through layers of the GaN based semiconductor device and the GaN epitaxial layer.
摘要翻译：提供半导体器件结构和制造半导体器件结构的方法，其包括在导电半导体衬底和/或导电层上的半绝缘或绝缘GaN外延层。半绝缘或绝缘GaN外延层具有至少约4μm的厚度。还提供GaN半导体器件结构和制造GaN半导体器件结构的方法，其包括在导电SiC衬底上的导电SiC衬底和绝缘或半绝缘GaN外延层。 GaN外延层具有至少约4μm的厚度。还提供GaN半导体器件结构和制造GaN半导体器件结构的方法，其包括导电GaN衬底，导电GaN衬底上的绝缘或半绝缘GaN外延层，GaN外延层上的GaN基半导体器件和通孔和通孔中相应的通孔金属延伸穿过GaN基半导体器件和GaN外延层的层。

2. 发明申请

US20060208280A1 Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions 有权
标题翻译：能耐受高温反向偏压测试条件的III类氮化物场效应晶体管（FETS）
公开(公告)号：US20060208280A1
公开(公告)日：2006-09-21
申请号：US11080905
申请日：2005-03-15
申请人： Richard Smith , Scott Sheppard , Adam Saxler , Yifeng Wu
发明人： Richard Smith , Scott Sheppard , Adam Saxler , Yifeng Wu
IPC分类号： H01L29/739
CPC分类号： H01L27/0605 , H01L29/2003 , H01L29/207 , H01L29/42316 , H01L29/7787
摘要： Group III Nitride based field effect transistor (FETS) are provided having a power degradation of less than about 3.0 dB when operated at a drain-to-source voltage (VDS) of about 56 volts, a gate to source voltage (Vgs) of from about −8 to about −14 volts and a temperature of about 140 ° C. for at least about 10 hours.
摘要翻译：提供基于III族氮化物的场效应晶体管（FETS），其在约56伏的漏极 - 源极电压（V SUB DS）下操作时具有小于约3.0dB的功率劣化，栅极至约-14伏特的电源电压（V S）和约140℃的温度至少约10小时。

3. 发明申请

US20060017064A1 Nitride-based transistors having laterally grown active region and methods of fabricating same 审中-公开
公开(公告)号：US20060017064A1
公开(公告)日：2006-01-26
申请号：US10899215
申请日：2004-07-26
申请人： Adam Saxler , Scott Sheppard , Richard Smith
发明人： Adam Saxler , Scott Sheppard , Richard Smith
IPC分类号： H01L29/739
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/66462
摘要： High electron mobility transistors and/or methods of fabricating high electron mobility transistors that include a first Group III-nitride layer having vertically grown regions, laterally grown regions and a coalescence region are provided. A Group III-nitride channel layer is provided on the first Group III-nitride layer and a Group III-nitride barrier layer is provided on the Group III-nitride channel layer. A drain contact, a source contact and a gate contact are provided on the barrier layer. The gate contact is disposed on a portion of the barrier layer on a laterally grown region of the first Group III-nitride layer and at least a portion of one of the source contact and/or the drain contact is disposed on a portion of the barrier layer on a vertically grown region of the first Group III-nitride layer.

4. 发明申请

US20060108606A1 Cap layers and/or passivation layers for nitride-based transistors, transistor structures and methods of fabricating same 有权
标题翻译：用于氮化物基晶体管的盖层和/或钝化层，晶体管结构及其制造方法
公开(公告)号：US20060108606A1
公开(公告)日：2006-05-25
申请号：US10996249
申请日：2004-11-23
申请人： Adam Saxler , Scott Sheppard , Richard Smith
发明人： Adam Saxler , Scott Sheppard , Richard Smith
IPC分类号： H01L31/109
CPC分类号： H01L29/66462 , H01L21/0237 , H01L21/02378 , H01L21/0254 , H01L21/02584 , H01L21/318 , H01L23/291 , H01L23/3171 , H01L29/2003 , H01L29/7787 , H01L2924/0002 , H01L2924/00
摘要： High electron mobility transistors are provided that include a non-uniform aluminum concentration AlGaN based cap layer having a high aluminum concentration adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. High electron mobility transistors are provided that include a cap layer having a doped region adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. Graphitic BN passivation structures for wide bandgap semiconductor devices are provided. SiC passivation structures for Group III-nitride semiconductor devices are provided. Oxygen anneals of passivation structures are also provided. Ohmic contacts without a recess are also provided.
摘要翻译：提供了高电子迁移率晶体管，其包括与盖层的表面相邻的具有高铝浓度的不均匀的铝浓度的AlGaN基覆盖层，其远离设置有盖层的阻挡层。提供了高电子迁移率晶体管，其包括具有邻近盖层的表面的掺杂区域的帽层，其远离其上设置盖层的阻挡层。提供了宽带隙半导体器件的石墨BN钝化结构。提供了III族氮化物半导体器件的SiC钝化结构。还提供了钝化结构的氧气退火。还提供了没有凹槽的欧姆接触。

5. 发明申请

US20060006435A1 Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses 有权
公开(公告)号：US20060006435A1
公开(公告)日：2006-01-12
申请号：US11221343
申请日：2005-09-07
申请人： Adam Saxler , Richard Smith , Scott Sheppard
发明人： Adam Saxler , Richard Smith , Scott Sheppard
IPC分类号： H01L29/76
CPC分类号： H01L29/66462 , H01L29/2003 , H01L29/7787
摘要： Contacts for a nitride based transistor and methods of fabricating such contacts provide a recess through a regrowth process. The contacts are formed in the recess. The regrowth process includes fabricating a first cap layer comprising a Group III-nitride semiconductor material. A mask is fabricated and patterned on the first cap layer. The pattern of the mask corresponds to the pattern of the recesses for the contacts. A second cap layer comprising a Group III-nitride semiconductor material is selectively fabricated (e.g. grown) on the first cap layer utilizing the patterned mask. Additional layers may also be formed on the second cap layer. The mask may be removed to provide recess(es) to the first cap layer, and contact(s) may be formed in the recess(es). Alternatively, the mask may comprise a conductive material upon which a contact may be formed, and may not require removal.

6. 发明申请

US20070164315A1 Cap Layers Including Aluminum Nitride for Nitride-Based Transistors and Methods of Fabricating Same 有权
标题翻译：包括用于氮化物的晶体管的氮化铝的盖层及其制造方法
公开(公告)号：US20070164315A1
公开(公告)日：2007-07-19
申请号：US11684747
申请日：2007-03-12
申请人： Richard Smith , Adam Saxler , Scott Sheppard
发明人： Richard Smith , Adam Saxler , Scott Sheppard
IPC分类号： H01L29/739 , H01L31/00
CPC分类号： H01L29/66462 , H01L21/318 , H01L23/291 , H01L23/3171 , H01L29/2003 , H01L29/7786 , H01L29/7787 , H01L2924/0002 , H01L2924/00
摘要： High electron mobility transistors are provided that include a non-uniform aluminum concentration AlGaN based cap layer having a high aluminum concentration adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. High electron mobility transistors are provided that include a cap layer having a doped region adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. Graphitic BN passivation structures for wide bandgap semiconductor devices are provided. SiC passivation structures for Group III-nitride semiconductor devices are provided. Oxygen anneals of passivation structures are also provided. Ohmic contacts without a recess are also provided.
摘要翻译：提供了高电子迁移率晶体管，其包括与盖层的表面相邻的具有高铝浓度的不均匀的铝浓度的AlGaN基覆盖层，其远离设置有盖层的阻挡层。提供了高电子迁移率晶体管，其包括具有邻近盖层的表面的掺杂区域的帽层，其远离其上设置盖层的阻挡层。提供了宽带隙半导体器件的石墨BN钝化结构。提供了III族氮化物半导体器件的SiC钝化结构。还提供了钝化结构的氧气退火。还提供了没有凹槽的欧姆接触。

7. 发明申请

US20050258451A1 Methods of fabricating nitride-based transistors having regrown ohmic contact regions and nitride-based transistors having regrown ohmic contact regions 有权
标题翻译：制造具有再生欧姆接触区域的氮化物基晶体管和具有再生欧姆接触区域的氮化物基晶体管的方法
公开(公告)号：US20050258451A1
公开(公告)日：2005-11-24
申请号：US10849617
申请日：2004-05-20
申请人： Adam Saxler , Richard Smith
发明人： Adam Saxler , Richard Smith
IPC分类号： H01L21/335 , H01L29/20 , H01L29/778 , H01L31/0328
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/66454
摘要： Transistor fabrication includes forming a nitride-based channel layer on a substrate, forming a barrier layer on the nitride-based channel layer, forming a contact recess in the barrier layer to expose a contact region of the nitride-based channel layer, forming a contact layer on the exposed contact region of the nitride-based channel layer, for example, using a low temperature deposition process, forming an ohmic contact on the contact layer and forming a gate contact disposed on the barrier layer adjacent the ohmic contact. A high electron mobility transistor (HEMT) and methods of fabricating a HEMT are also provided. The HEMT includes a nitride-based channel layer on a substrate, a barrier layer on the nitride-based channel layer, a contact recess in the barrier layer that extends into the channel layer, an n-type nitride-based semiconductor material contact region on the nitride-based channel layer in the contact recess, an ohmic contact on the nitride-based contact region and a gate contact disposed on the barrier layer adjacent the ohmic contact. The n-type nitride-based semiconductor material contact region and the nitride-based channel layer include a surface area enlargement structure.
摘要翻译：晶体管制造包括在衬底上形成基于氮化物的沟道层，在氮化物基沟道层上形成阻挡层，在阻挡层中形成接触凹槽以暴露氮化物基沟道层的接触区域，形成接触例如使用低温沉积工艺在接触层上形成欧姆接触，并形成邻近欧姆接触的阻挡层上的栅极接触。还提供了高电子迁移率晶体管（HEMT）和制造HEMT的方法。 HEMT包括在衬底上的基于氮化物的沟道层，氮化物基沟道层上的势垒层，延伸到沟道层中的阻挡层中的接触凹槽，n型氮化物基半导体材料接触区域接触凹槽中的基于氮化物的沟道层，氮化物基接触区域上的欧姆接触和邻近欧姆接触的位于阻挡层上的栅极接触。 n型氮化物基半导体材料接触区域和氮化物基沟道层包括表面积扩大结构。

8. 发明申请

US20080035934A1 Passivation of Wide Band-Gap Based Semiconductor Devices with Hydrogen-Free Sputtered Nitrides 有权
标题翻译：使用无氢溅射氮化物钝化宽带隙半导体器件
公开(公告)号：US20080035934A1
公开(公告)日：2008-02-14
申请号：US11845805
申请日：2007-08-28
申请人： Scott Sheppard , Richard Smith , Zoltan Ring
发明人： Scott Sheppard , Richard Smith , Zoltan Ring
IPC分类号： H01L29/15
CPC分类号： H01L29/66462 , H01L21/045 , H01L21/3145 , H01L21/318 , H01L21/3185 , H01L29/1608 , H01L29/2003 , H01L29/24 , H01L29/7787
摘要： An improved field effect transistor formed in the Group III nitride material system includes a two part structure in which a chemical vapor deposited passivation layer of silicon nitride encapsulates a previously sputtered-deposited layer of silicon nitride. The sputtered layer provides some of the benefits of passivation and the chemical vapor deposited layer provides an excellent environmental barrier.
摘要翻译：形成在III族氮化物材料体系中的改进的场效应晶体管包括二部分结构，其中氮化硅的化学气相沉积钝化层封装预先溅射的氮化硅层。溅射层提供了钝化的一些优点，并且化学气相沉积层提供了优异的环境屏障。

9. 发明申请

US20060019435A1 Methods of fabricating nitride-based transistors with a cap layer and a recessed gate 有权
标题翻译：制造具有盖层和凹入栅极的基于氮化物的晶体管的方法
公开(公告)号：US20060019435A1
公开(公告)日：2006-01-26
申请号：US10897726
申请日：2004-07-23
申请人： Scott Sheppard , Richard Smith
发明人： Scott Sheppard , Richard Smith
IPC分类号： H01L21/338
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/41766 , H01L29/42316 , H01L29/4236 , H01L29/66431 , H01L29/66462 , H01L29/778 , H01L29/7786 , H01L2924/13064
摘要： An anneal of a gate recess prior to formation of a gate contact, such as a Schottky contact, may reduce gate leakage and/or provide a high quality gate contact in a semiconductor device, such as a transistor. The use of an encapsulation layer during the anneal may further reduce damage to the semiconductor in the gate recess of the transistor. The anneal may be provided, for example, by an anneal of ohmic contacts of the device. Thus, high quality gate and ohmic contacts may be provided with reduced degradation of the gate region that may result from providing a recessed gate structure as a result of etch damage in forming the recess.
摘要翻译：在形成诸如肖特基接触之类的栅极接触之前的栅极凹槽的退火可以减少栅极泄漏和/或在诸如晶体管的半导体器件中提供高质量的栅极接触。在退火期间使用封装层可以进一步降低对晶体管的栅极凹槽中的半导体的损坏。退火可以例如通过器件的欧姆接触的退火来提供。因此，可以提供高质量的栅极和欧姆接触，由于在形成凹槽时由于蚀刻损伤而提供凹陷的栅极结构可能导致栅极区域的降低。

10. 发明申请

US20050258431A1 Dielectric passivation for semiconductor devices 有权
标题翻译：半导体器件的介质钝化
公开(公告)号：US20050258431A1
公开(公告)日：2005-11-24
申请号：US10851507
申请日：2004-05-22
申请人： Richard Smith , Scott Sheppard , John Palmour
发明人： Richard Smith , Scott Sheppard , John Palmour
IPC分类号： H01L21/314 , H01L21/316 , H01L21/335 , H01L23/31 , H01L29/20 , H01L29/778 , H01L31/108 , H01L27/15
CPC分类号： H01L29/7787 , H01L23/3192 , H01L29/2003 , H01L29/66462 , H01L31/1085 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device is disclosed that includes a layer of Group III nitride semiconductor material that includes at least one surface, a control contact on the surface for controlling the electrical response of the semiconductor material, a dielectric barrier layer covering at least a portion of the one surface adjacent the control contact, the dielectric barrier layer having a bandgap greater than the bandgap of the Group III nitride and a conduction band offset from the conduction band of the Group III nitride; and a dielectric protective layer covering the remainder of the Group III nitride surface.
摘要翻译：公开了一种半导体器件，其包括III族氮化物半导体材料层，其包括至少一个表面，用于控制半导体材料的电响应的表面上的控制触点，覆盖该半导体材料的至少一部分的电介质阻挡层表面邻近控制触点，电介质阻挡层的带隙大于III族氮化物的带隙，导带偏离第III族氮化物的导带; 以及覆盖III族氮化物表面的其余部分的介电保护层。

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