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    • 2. 发明授权
    • Surface acoustic wave element
    • 表面声波元件
    • US06713941B2
    • 2004-03-30
    • US10204454
    • 2002-08-21
    • Katsuhiro ItakuraAkihiro HachigoHideaki NakahataSatoshi FujiiShinichi Shikata
    • Katsuhiro ItakuraAkihiro HachigoHideaki NakahataSatoshi FujiiShinichi Shikata
    • H03H925
    • H03H9/02582
    • A surface acoustic wave (SAW) device that is suitable for mass production and that has excellent operational performance at the superhigh-frequency range. The SAW device comprises (a) a diamond layer 3; (b) a ZnO layer 4, with a thickness of tz, formed on the diamond layer 3; (c) interdigital transducers (IDTs) 5, which excite and receive a SAW, formed on the ZnO layer 4; and (d) an SiO2 layer 6, with a thickness of ts, formed on the ZnO layer 4 so that the SiO2 layer can cover the IDTs 5. The structure of the SAW device is determined by specific numeric ranges of the parameters kh1 and kh2, which are given in equations kh1=3·2&pgr;·(tz/&lgr;) and kh2=3·2&pgr;·(ts/&lgr;), where &lgr; signifies the wavelength of the fundamental wave of the second Sezawa mode of the SAW. The SAW device uses the third harmonic of the second Sezawa mode of the SAW excited.
    • 一种适用于大规模生产且在超高频范围内具有出色的运行性能的表面声波(SAW)器件。 SAW器件包括(a)金刚石层3; (b)在金刚石层3上形成厚度为tz的ZnO层4; (c)在ZnO层4上形成的用于激发和接收SAW的叉指换能器(IDT)5; 和(d)在ZnO层4上形成厚度为ts的SiO 2层6,使得SiO 2层可以覆盖IDT 5. SAW器件的结构由参数kh1和kh2的特定数值范围确定 ,其方程式为kh1 = 3.2pi(tz /λ)和kh2 = 3.2pi(ts / lambda),其中λ表示SAW的第二Sezawa模式的基波的波长。 SAW器件使用SAW激励的第二Sezawa模式的三次谐波。
    • 4. 发明授权
    • Surface acoustic wave device
    • 表面声波装置
    • US06469416B1
    • 2002-10-22
    • US09959954
    • 2001-11-13
    • Katsuhiro ItakuraAkihiro HachigoHideaki NakahataSatoshi FujiiShinichi Shikata
    • Katsuhiro ItakuraAkihiro HachigoHideaki NakahataSatoshi FujiiShinichi Shikata
    • H03H925
    • H03H9/02984H03H9/02574H03H9/02582
    • A surface acoustic wave (SAW) device is provided that is suitable for mass production and that has excellent operational performance at the superhigh-frequency range. The SAW device comprises (a) a diamond layer 3; (b) a ZnO layer 4, with a thickness of tz, formed on the diamond layer 3; (c) interdigital transducers (IDTs) 5, which excite and receive a SAW, formed on the ZnO layer 4; and (d) an SiO2 layer 6, with a thickness of ts, formed on the ZnO layer 4 so that the SiO2 layer can cover the IDTs 5. The structure of the SAW device is determined by specific numeric ranges of the parameters kh1 and kh2, which are given in equations kh1=5·2&pgr;·(tz/&lgr;) and kh2=5·2&pgr;(ts/&lgr;), where &lgr; signifies the wavelength of the fundamental wave of the second mode of the SAW. The SAW device uses the fifth harmonic of the second mode of the SAW.
    • 提供了适用于批量生产并且在超高频范围内具有优异的操作性能的表面声波(SAW)装置。 SAW器件包括(a)金刚石层3; (b)在金刚石层3上形成厚度为tz的ZnO层4; (c)在ZnO层4上形成的用于激发和接收SAW的叉指换能器(IDT)5; 和(d)在ZnO层4上形成厚度为ts的SiO 2层6,使得SiO 2层可以覆盖IDT 5. SAW器件的结构由参数kh1和kh2的特定数值范围确定 ,其方程式为kh1 = 5.2pi(tz / lambd)和kh2 = 5.2pi(ts / lambd),其中lambd表示SAW的第二模式的基波的波长。 SAW器件使用SAW的第二模式的第五谐波。
    • 9. 发明申请
    • Wafer holder for wafer prober and wafer prober equipped with same
    • 用于晶圆探针和晶圆探测器的晶片支架配备相同
    • US20090045829A1
    • 2009-02-19
    • US11496019
    • 2006-07-31
    • Tomoyuki AwazuKatsuhiro ItakuraMasuhiro NatsuharaHirohiko Nakata
    • Tomoyuki AwazuKatsuhiro ItakuraMasuhiro NatsuharaHirohiko Nakata
    • G01R31/26H05B3/68
    • G01R31/2865G01R31/2875
    • It is an object of the present invention to provide a wafer prober wafer holder that is highly rigid and increases the heat insulating effect, thereby improving positional accuracy, thermal uniformity, and chip temperature ramp-up and cooling rates, as well as a wafer prober device equipped therewith.A wafer holder of the present invention includes a chuck top that mounts a wafer, and a support member that supports the chuck top, wherein, a restricting member is provided that covers an interface between the chuck top and the support member. By covering the gap between the chuck top and the support member with the restricting member, the heat insulating effect can be increased by preventing the flow of outside air through the gap into the support member, and the cooling rate can be particularly improved if cooling to a temperature below room temperature.
    • 本发明的目的是提供一种高度刚性的晶片探针晶片保持器,并且增加隔热效果,从而提高位置精度,热均匀性以及芯片温度升高和冷却速度,以及晶片探测器 装备的装置。 本发明的晶片保持器包括安装晶片的卡盘顶部和支撑卡盘顶部的支撑构件,其中设置有限制构件,该限制构件覆盖卡盘顶部和支撑构件之间的界面。 通过用限制构件覆盖卡盘顶部和支撑构件之间的间隙,可以通过防止外部空气通过间隙流入支撑构件而提高隔热效果,并且如果冷却至 温度低于室温。