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1. 发明授权

US06984918B1 Saw device 失效
标题翻译：锯装置
公开(公告)号：US06984918B1
公开(公告)日：2006-01-10
申请号：US10089804
申请日：2000-10-04
申请人： Akihiro Hachigo , Katsuhiro Itakura , Satoshi Fujii , Hideaki Nakahata , Shinichi Shikata
发明人： Akihiro Hachigo , Katsuhiro Itakura , Satoshi Fujii , Hideaki Nakahata , Shinichi Shikata
IPC分类号： H01L41/04 , H03H9/145
CPC分类号： H03H9/02582 , H03H9/02574
摘要： The present invention provides a surface acoustic wave device comprising a diamond, having operating frequencies in the range of several hundreds of MHz to several tens of GHz, and being capable of operating at high frequencies.The surface acoustic wave device of the present invention comprises a diamond layer or a substrate layer and a diamond layer, a ZnO piezoelectric layer, interdigital transducers and a short-circuit electrode layer, being characterized in that (2π·H/λM) is in the range of 3.0 to 10.0 where the thickness of the ZnO layer is H and the wavelength of the surface acoustic wave is λM.
摘要翻译：本发明提供一种表面声波装置，其包括金刚石，其工作频率在几百MHz至几十GHz的范围内，并且能够在高频下操作。本发明的声表面波器件包括金刚石层或基底层和金刚石层，ZnO压电层，叉指式换能器和短路电极层，其特征在于（2pi.H /λ< M 3）在3.0至10.0的范围内，其中ZnO层的厚度为H，声表面波的波长为λM。

2. 发明授权

US06469416B1 Surface acoustic wave device 有权
标题翻译：表面声波装置
公开(公告)号：US06469416B1
公开(公告)日：2002-10-22
申请号：US09959954
申请日：2001-11-13
申请人： Katsuhiro Itakura , Akihiro Hachigo , Hideaki Nakahata , Satoshi Fujii , Shinichi Shikata
发明人： Katsuhiro Itakura , Akihiro Hachigo , Hideaki Nakahata , Satoshi Fujii , Shinichi Shikata
IPC分类号： H03H925
CPC分类号： H03H9/02984 , H03H9/02574 , H03H9/02582
摘要： A surface acoustic wave (SAW) device is provided that is suitable for mass production and that has excellent operational performance at the superhigh-frequency range. The SAW device comprises (a) a diamond layer 3; (b) a ZnO layer 4, with a thickness of tz, formed on the diamond layer 3; (c) interdigital transducers (IDTs) 5, which excite and receive a SAW, formed on the ZnO layer 4; and (d) an SiO2 layer 6, with a thickness of ts, formed on the ZnO layer 4 so that the SiO2 layer can cover the IDTs 5. The structure of the SAW device is determined by specific numeric ranges of the parameters kh1 and kh2, which are given in equations kh1=5·2&pgr;·(tz/&lgr;) and kh2=5·2&pgr;(ts/&lgr;), where &lgr; signifies the wavelength of the fundamental wave of the second mode of the SAW. The SAW device uses the fifth harmonic of the second mode of the SAW.
摘要翻译：提供了适用于批量生产并且在超高频范围内具有优异的操作性能的表面声波（SAW）装置。 SAW器件包括（a）金刚石层3; （b）在金刚石层3上形成厚度为tz的ZnO层4; （c）在ZnO层4上形成的用于激发和接收SAW的叉指换能器（IDT）5; 和（d）在ZnO层4上形成厚度为ts的SiO 2层6，使得SiO 2层可以覆盖IDT 5. SAW器件的结构由参数kh1和kh2的特定数值范围确定，其方程式为kh1 = 5.2pi（tz / lambd）和kh2 = 5.2pi（ts / lambd），其中lambd表示SAW的第二模式的基波的波长。 SAW器件使用SAW的第二模式的第五谐波。

3. 发明授权

US06642813B1 Surface acoustic wave device utilizing a ZnO layer and a diamond layer 有权
标题翻译：使用ZnO层和金刚石层的声表面波器件
公开(公告)号：US06642813B1
公开(公告)日：2003-11-04
申请号：US10089816
申请日：2002-04-04
申请人： Katsuhiro Itakura , Akihiro Hachigo , Satoshi Fujii , Hideaki Nakahata , Shinichi Shikata
发明人： Katsuhiro Itakura , Akihiro Hachigo , Satoshi Fujii , Hideaki Nakahata , Shinichi Shikata
IPC分类号： H03H964
CPC分类号： H03H9/02582
摘要： A surface acoustic wave (SAW) device that is made with diamond, that has high efficiency, and that can be operated at high frequencies, particularly from 9.5 to 10.5 GHz. The SAW device comprises a diamond layer formed singly or formed on a substrate, a ZnO piezoelectric layer, interdigital transducers (IDTs), and a short-circuiting electrode as required. The SAW device has a structure in which the thickness of the ZnO layer, the wavelength of a harmonic of the SAW, and the line width of the IDTs fall in a specified range. With this structure, a large electromechanical coupling coefficient is obtained in a high-frequency range of 10 GHz band by utilizing the third or fifth harmonic of the SAW.
摘要翻译：具有金刚石的表面声波（SAW）器件，其具有高效率，并且可以在高频，特别是9.5至10.5GHz的频率下操作。 SAW器件包括单独形成或形成在衬底上的金刚石层，ZnO压电层，叉指式换能器（IDT）和根据需要的短路电极。 SAW器件具有其中ZnO层的厚度，SAW的谐波的波长和IDT的线宽落在特定范围内的结构。利用这种结构，通过利用SAW的第三或第五谐波，在10GHz频带的高频范围内获得大的机电耦合系数。

4. 发明授权

US06713941B2 Surface acoustic wave element 有权
标题翻译：表面声波元件
公开(公告)号：US06713941B2
公开(公告)日：2004-03-30
申请号：US10204454
申请日：2002-08-21
申请人： Katsuhiro Itakura , Akihiro Hachigo , Hideaki Nakahata , Satoshi Fujii , Shinichi Shikata
发明人： Katsuhiro Itakura , Akihiro Hachigo , Hideaki Nakahata , Satoshi Fujii , Shinichi Shikata
IPC分类号： H03H925
CPC分类号： H03H9/02582
摘要： A surface acoustic wave (SAW) device that is suitable for mass production and that has excellent operational performance at the superhigh-frequency range. The SAW device comprises (a) a diamond layer 3; (b) a ZnO layer 4, with a thickness of tz, formed on the diamond layer 3; (c) interdigital transducers (IDTs) 5, which excite and receive a SAW, formed on the ZnO layer 4; and (d) an SiO2 layer 6, with a thickness of ts, formed on the ZnO layer 4 so that the SiO2 layer can cover the IDTs 5. The structure of the SAW device is determined by specific numeric ranges of the parameters kh1 and kh2, which are given in equations kh1=3·2&pgr;·(tz/&lgr;) and kh2=3·2&pgr;·(ts/&lgr;), where &lgr; signifies the wavelength of the fundamental wave of the second Sezawa mode of the SAW. The SAW device uses the third harmonic of the second Sezawa mode of the SAW excited.
摘要翻译：一种适用于大规模生产且在超高频范围内具有出色的运行性能的表面声波（SAW）器件。 SAW器件包括（a）金刚石层3; （b）在金刚石层3上形成厚度为tz的ZnO层4; （c）在ZnO层4上形成的用于激发和接收SAW的叉指换能器（IDT）5; 和（d）在ZnO层4上形成厚度为ts的SiO 2层6，使得SiO 2层可以覆盖IDT 5. SAW器件的结构由参数kh1和kh2的特定数值范围确定，其方程式为kh1 = 3.2pi（tz /λ）和kh2 = 3.2pi（ts / lambda），其中λ表示SAW的第二Sezawa模式的基波的波长。 SAW器件使用SAW激励的第二Sezawa模式的三次谐波。

5. 发明授权

US5463901A Stacked piezoelectric surface acoustic wave device with a boron nitride layer in the stack 失效
标题翻译：堆叠中的叠氮化硼层叠压电声表面波器件
公开(公告)号：US5463901A
公开(公告)日：1995-11-07
申请号：US283251
申请日：1994-07-29
申请人： Akihiro Hachigo , Hideaki Nakahata , Shinichi Shikata , Naoji Fujimori
发明人： Akihiro Hachigo , Hideaki Nakahata , Shinichi Shikata , Naoji Fujimori
IPC分类号： H03H9/145 , H03H9/02 , H03H9/25 , G01L9/00 , H04R31/00
CPC分类号： H03H9/02574 , Y10T29/49005
摘要： A layer of boron nitride which is relatively easily workable is positioned in a stacked structure in close contact with a piezoelectric member, to provide a surface acoustic wave device which can be driven in a higher frequency range. Such a surface acoustic device (10) has a substrate (1), a boron nitride film (2) formed on the substrate (1), and a pair of interdigital electrodes (3a, 3b) formed on the boron nitride film (2). The interdigital electrodes (3a, 3b) are covered with a piezoelectric film (4), which is in close contact with the boron nitride film (2).
摘要翻译：相对容易加工的氮化硼层位于与压电元件紧密接触的堆叠结构中，以提供能够在较高频率范围内驱动的声表面波器件。这种表面声学装置（10）具有基板（1），形成在基板（1）上的氮化硼膜（2）和形成在氮化硼膜（2）上的一对叉指电极（3a，3b）。叉指电极（3a，3b）被与氮化硼膜（2）紧密接触的压电膜（4）覆盖。

6. 发明授权

US5390401A Method for producing a surface acoustic wave device 失效
标题翻译：声表面波装置的制造方法
公开(公告)号：US5390401A
公开(公告)日：1995-02-21
申请号：US103729
申请日：1993-08-06
申请人： Shinichi Shikata , Hideaki Nakahata , Akihiro Hachigo , Naoji Fujimori
发明人： Shinichi Shikata , Hideaki Nakahata , Akihiro Hachigo , Naoji Fujimori
IPC分类号： H03H9/145 , H03H3/08 , H03H9/02 , H03H9/05 , H03H9/10 , H03H9/25 , H01L41/22
CPC分类号： H03H9/02574 , H03H3/08 , H03H9/1092 , Y10T29/42
摘要： A surface acoustic wave device is so manufactured that it's reliability is increased and so that it is surface-mountable with no requirement for packaging. The surface acoustic wave device (20) has a pair of opposite interdigital electrodes (2a, 2b) and a piezoelectric member (4) in close contact with the interdigital electrodes (2a, 2b). A portion located between the pair of interdigital electrodes (2a, 2b) propagates surface acoustic waves. This device (20) is characterized by an air bridge (13) covering the portion of the piezoelectric member (4) for propagating surface acoustic waves and the pair of interdigital electrodes (2a, 2b). The air bridge (13), may be provided with an insulating film (14) which is not in contact with the piezoelectric member (4).
摘要翻译：表面声波装置的制造使其可靠性增加，并且其表面可安装，而不需要包装。表面声波装置（20）具有与叉指电极（2a，2b）紧密接触的一对相对的叉指电极（2a，2b）和压电元件（4）。位于一对叉指电极（2a，2b）之间的部分传播表面声波。该装置（20）的特征在于，覆盖压电部件（4）的部分以传播表面声波的空气桥（13）和一对叉指电极（2a，2b）。空气桥（13）可以设置有不与压电构件（4）接触的绝缘膜（14）。

7. 发明授权

US06710513B2 Surface acoustic wave device and substrate thereof 有权
标题翻译：声表面波器件及其衬底
公开(公告)号：US06710513B2
公开(公告)日：2004-03-23
申请号：US10203423
申请日：2002-08-08
申请人： Hideaki Nakahata , Akihiro Hachigo , Natsuo Tatsumi , Takahiro Imai , Shinichi Shikata
发明人： Hideaki Nakahata , Akihiro Hachigo , Natsuo Tatsumi , Takahiro Imai , Shinichi Shikata
IPC分类号： H03H925
CPC分类号： H03H9/02582 , H03H9/02574
摘要： Provided are a substrate for a surface-acoustic-wave device and a surface-acoustic-wave device, in which an intermediate layer for controlling crystal characteristics of a piezoelectric layer does not easily separate from a diamond layer. A surface-acoustic-wave device substrate 20 and a surface-acoustic-wave device 10, according to the present invention, comprises a diamond layer 22, an intermediate layer 24 disposed on the diamond layer 22, and a piezoelectric layer 26 disposed on the intermediate layer 24, the piezoelectric layer 26 being made of LiNbO3 or LiTaO3, the intermediate layer 24 being made of AlN.
摘要翻译：提供一种用于控制压电层的晶体特性的中间层不容易与金刚石层分离的表面声波器件和表面声波器件的基板。表面声波器件根据本发明的衬底20和表面声波器件10包括金刚石层22，设置在金刚石层22上的中间层24和设置在中间层24上的压电层26，压电层 26由LiNbO 3或LiTaO 3制成，中间层24由AlN制成。

8. 发明授权

US5501909A Polycrystalline diamond substrate and process for producing the same 失效
标题翻译：多晶金刚石基底及其制造方法
公开(公告)号：US5501909A
公开(公告)日：1996-03-26
申请号：US196609
申请日：1994-02-15
申请人： Kenjiro Higaki , Hideaki Nakahata , Akihiro Hachigo , Shinichi Shikata
发明人： Kenjiro Higaki , Hideaki Nakahata , Akihiro Hachigo , Shinichi Shikata
IPC分类号： C23C16/27 , C23C16/56 , H03H9/02 , C30B25/04
CPC分类号： C23C16/56 , C23C16/27 , H03H9/02582 , Y10T428/24273 , Y10T428/24479 , Y10T428/30
摘要： A diamond substrate having a smooth surface, including a polycrystalline diamond film having a surface with a pit, and an insulating material other than diamond, which occupies the pit.
摘要翻译：具有光滑表面的金刚石基底，包括具有凹坑的表面的多晶金刚石薄膜和占据凹坑的除金刚石之外的绝缘材料。

9. 发明授权

US5497726A Method of manufacturing a surface acoustic wave element 失效
标题翻译：声表面波元件的制造方法
公开(公告)号：US5497726A
公开(公告)日：1996-03-12
申请号：US240826
申请日：1994-05-11
申请人： Shinichi Shikata , Akihiro Hachigo , Hideaki Nakahata , Kenjiro Higaki
发明人： Shinichi Shikata , Akihiro Hachigo , Hideaki Nakahata , Kenjiro Higaki
IPC分类号： H03H3/08 , H03H9/02 , H03H9/25 , C30B23/04 , C30B29/02 , C30B29/04
CPC分类号： H03H9/02582 , H03H3/08
摘要： A surface acoustic wave element has a diamond layer, a piezoelectric thin film formed on the diamond layer, and a pair of electrodes for generating a surface acoustic wave having a specific wavelength and extracting the surface acoustic wave, wherein at least one electrode is a copper electrode epitaxially grown on the surface of the diamond layer. To manufacture this surface acoustic wave element, after the diamond layer is formed on a substrate by epitaxial growth, the copper electrodes each having the predetermined shape are formed on the surface of the diamond layer by epitaxial growth. Since the copper electrodes formed on the diamond layer consist of high-quality single crystal copper, resistances to electromigration and stress migrations can be increased. As a result, there is provided an excellent surface acoustic wave element free from electrical defects caused by degradation and failure of the copper electrodes or free from degradation of the electrical characteristics.
摘要翻译：表面声波元件具有金刚石层，形成在金刚石层上的压电薄膜，以及一对电极，用于产生具有特定波长并提取表面声波的表面声波，其中至少一个电极是铜在金刚石层的表面上外延生长的电极。为了制造该声表面波元件，在通过外延生长在基板上形成金刚石层之后，通过外延生长在金刚石层的表面上形成各具有预定形状的铜电极。由于形成在金刚石层上的铜电极由高质量的单晶铜组成，所以可以提高电迁移和应力迁移的电阻。结果，提供了由于铜电极的劣化和故障而导致的不受电特性降低的电缺陷的优异的表面声波元件。

10. 发明授权

US5446329A Surface acoustic wave element 失效
标题翻译：表面声波元件
公开(公告)号：US5446329A
公开(公告)日：1995-08-29
申请号：US118976
申请日：1993-09-09
申请人： Hideaki Nakahata , Akihiro Hachigo , Kenjiro Higaki , Shinichi Shikata
发明人： Hideaki Nakahata , Akihiro Hachigo , Kenjiro Higaki , Shinichi Shikata
IPC分类号： H03H9/145 , H03H9/02 , H03H9/25 , H01L41/08
CPC分类号： H03H9/02582
摘要： A surface acoustic wave element includes a hard layer containing a composition component essentially consisting of at least one of diamond and a diamond-like carbon film, a piezoelectric layer formed on the hard layer, a silicon dioxide (SiO.sub.2) layer formed on the piezoelectric layer, and electrodes combined with the piezoelectric layer to perform electro-mechanical conversion. The surface acoustic wave element has a larger electro-mechanical coupling coefficient and a higher surface acoustic wave propagation velocity than does a conventional surface acoustic wave element having no silicon dioxide layer, thereby obtaining a surface acoustic wave element that can operate in a high-frequency range. In particular, the electro-mechanical coupling coefficient is increased. The SiO.sub.2 layer is an electric insulator and rarely reacts with moisture or acids. The SiO.sub.2 layer protects the piezoelectric layer and the electrodes from effects of the external environment, thereby providing a surface acoustic wave element having good high-frequency characteristics and a high resistance to adverse environments.
摘要翻译：表面声波元件包括含有基本上由金刚石和类金刚石碳膜中的至少一种组成的组成成分的硬质层，形成在硬质层上的压电层，形成在压电层上的二氧化硅（SiO 2）层和与压电层结合的电极进行机电转换。表面声波元件比没有二氧化硅层的常规表面声波元件具有更大的机电耦合系数和更高的表面声波传播速度，从而获得可以在高频下工作的表面声波元件范围。特别地，机电耦合系数增加。 SiO2层是电绝缘体，很少与水分或酸反应。 SiO 2层保护压电层和电极免受外部环境的影响，从而提供具有良好的高频特性和对不利环境的高抗性的表面声波元件。

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