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1. 发明申请

US20060028279A1 Automatic gain control feedback amplifier 有权
标题翻译：自动增益控制反馈放大器
公开(公告)号：US20060028279A1
公开(公告)日：2006-02-09
申请号：US10995033
申请日：2004-11-23
申请人： Sang Lee , Hyeon Ki , Jin Kang , Kyu Shim , Kyoung Cho
发明人： Sang Lee , Hyeon Ki , Jin Kang , Kyu Shim , Kyoung Cho
IPC分类号： H03F3/08
CPC分类号： H03F3/08 , H03F1/34 , H03F3/3432 , H03F3/50 , H03G3/3084
摘要： There is provided a feedback amplifier capable of easily controlling its dynamic range without a separate gain control signal generation circuit. The feedback amplifier includes an input terminal detecting an input voltage from input current, a feedback amplification unit amplifying the input voltage to generate an output signal, and an output terminal outputting a signal amplified by the feedback amplification unit. The feedback amplification unit includes a feedback circuit unit including a feedback resistor located between the input terminal and the output terminal, and a feedback transistor connected in parallel to the feedback resistor; and a bias circuit unit supplying a predetermined bias voltage to the feedback transistor of the feedback circuit unit and merged in the feedback amplification unit.
摘要翻译：提供了一种反馈放大器，其能够在没有单独的增益控制信号产生电路的情况下容易地控制其动态范围。反馈放大器包括检测来自输入电流的输入电压的输入端子，放大输入电压以产生输出信号的反馈放大单元以及输出由反馈放大单元放大的信号的输出端子。反馈放大单元包括反馈电路单元，该反馈电路单元包括位于输入端子和输出端子之间的反馈电阻器和与反馈电阻器并联连接的反馈晶体管; 以及偏置电路单元，向反馈电路单元的反馈晶体管提供预定的偏置电压并且合并在反馈放大单元中。

2. 发明申请

US20050006636A1 Optoelectronic device having dual-structural nano dot and method for manufacturing the same 有权
标题翻译：具有双结构纳米点的光电器件及其制造方法
公开(公告)号：US20050006636A1
公开(公告)日：2005-01-13
申请号：US10912614
申请日：2004-08-04
申请人： Kyu Shim , Young Song , Sang Kim , Jin Kang
发明人： Kyu Shim , Young Song , Sang Kim , Jin Kang
IPC分类号： H01L29/12 , H01L31/102 , H01L33/08 , H01L33/18 , H01L21/00 , H01L33/00
CPC分类号： H01L29/127 , B82Y10/00 , B82Y20/00 , H01L31/102 , H01L33/08 , H01L33/18
摘要： An optoelectronic device and a method of manufacturing the same which the optoelectronic effect such as light emission or light reception can be increased by forming a dual-structural nano dot to enhance the confinement density of electrons and holes are provided. The optoelectronic device comprises an electron injection layer, a nano dot, and a hole injection layer. The nano dot has a dual structure composed of an external nano dot and an internal dot. The method of manufacturing the optoelectronic device comprises the steps of forming an electron injection layer on a semiconductor substrate; growing nano dot layer on the electron injection layer by an epi-growth method; heating the nano dot layer so that the nano dot has a dual structure composed of an external nano dot and an internal nano dot; and forming a hole injection layer on the overall structure.
摘要翻译：提供了通过形成双结构纳米点以增强电子和空穴的限制密度来提高光发射或光接收等光电效应的光电子器件及其制造方法。光电子器件包括电子注入层，纳米点和空穴注入层。纳米点具有由外部纳米点和内部点组成的双重结构。制造光电器件的方法包括以下步骤：在半导体衬底上形成电子注入层; 通过外延生长法在电子注入层上生长纳米点层; 加热纳米点层，使得纳米点具有由外部纳米点和内部纳米点组成的双重结构; 并在整个结构上形成空穴注入层。

3. 发明申请

US20050196925A1 Method of forming stress-relaxed SiGe buffer layer 审中-公开
标题翻译：形成应力松弛SiGe缓冲层的方法
公开(公告)号：US20050196925A1
公开(公告)日：2005-09-08
申请号：US11018647
申请日：2004-12-22
申请人： Sang Kim , Kyu Shim , Jin Kang
发明人： Sang Kim , Kyu Shim , Jin Kang
IPC分类号： H01L29/739
CPC分类号： H01L29/7782 , H01L21/02381 , H01L21/0245 , H01L21/0251 , H01L21/02532 , H01L21/0262 , H01L29/1054 , H01L29/165 , H01L29/78
摘要： Provided is a method of forming a stress-relaxed SiGe buffer layer on a silicon substrate using a reduced pressure chemical vapor deposition (RPCVD) technique. The method includes: forming a graded composition layer having a predetermined germanium composition gradient on a silicon substrate; forming and thermally annealing a first constant composition layer having a predetermined germanium composition on the graded composition layer; removing the first constant composition layer by a predetermined thickness to planarize a surface; and forming a second constant composition layer on the first constant composition layer to form a SiGe buffer layer having the graded composition layer and the constant composition layer. A strained silicon or SiGe channel can be formed in a silicon-based MOSFET device or a MODFET device by forming the stress-relaxed SiGe buffer layer that has a relatively thin thickness, a low surface dislocation density, and a surface roughness similar to bulk silicon, and thus a device having excellent channel conductivity and high frequency characteristics can be manufactured.
摘要翻译：提供了使用减压化学气相沉积（RPCVD）技术在硅衬底上形成应力松弛SiGe缓冲层的方法。该方法包括：在硅衬底上形成具有预定锗组分梯度的梯度组合物层; 在梯度组合物层上形成并热退火具有预定锗组合物的第一恒定组成层; 将第一恒定组成层除去预定厚度以使表面平坦化; 以及在第一恒定组成层上形成第二恒定组成层以形成具有渐变组成层和恒定组成层的SiGe缓冲层。可以通过形成具有较薄厚度，低表面位错密度和与体硅相似的表面粗糙度的应力松弛SiGe缓冲层，在硅基MOSFET器件或MODFET器件中形成应变硅或SiGe沟道，因此可以制造具有优异的沟道导电性和高频特性的器件。

4. 发明申请

US20050115946A1 Radical assisted oxidation apparatus 审中-公开
标题翻译：自由基辅助氧化装置
公开(公告)号：US20050115946A1
公开(公告)日：2005-06-02
申请号：US10817851
申请日：2004-04-06
申请人： Kyu Shim , Young Song , Sang Kim , Nae Lee , Jin Kang
发明人： Kyu Shim , Young Song , Sang Kim , Nae Lee , Jin Kang
IPC分类号： H01L21/205 , F27B5/14 , F27B17/00 , H01L21/00 , H01L21/316 , H01L21/44
CPC分类号： H01L21/67115 , F27B17/0025 , H01L21/02126 , H01L21/02178 , H01L21/02236 , H01L21/02255 , H01L21/02271 , H01L21/31662
摘要： Provided is a radical assisted oxidation apparatus comprising a gas supply system, a radical source, a growth chamber, a load lock chamber, and a vacuum system, whereby it is possible to manufacture a high quality oxide film at a low temperature and improve a low frequency noise (1/f).
摘要翻译：提供了一种自由基辅助氧化装置，其包括气体供给系统，自由基源，生长室，负载锁定室和真空系统，由此可以在低温下制造高质量的氧化物膜并且提高低频率噪声（1 / f）。

5. 发明申请

US20070287234A1 Bipolar transistor, BiCMOS device, and method for fabricating thereof 有权
标题翻译：双极晶体管，BiCMOS器件及其制造方法
公开(公告)号：US20070287234A1
公开(公告)日：2007-12-13
申请号：US11797071
申请日：2007-04-30
申请人： Jin Kang , Seung Lee , Kyoung Cho
发明人： Jin Kang , Seung Lee , Kyoung Cho
IPC分类号： H01L21/8249
CPC分类号： H01L21/84 , H01L21/8249 , H01L27/0623 , H01L27/1203 , H01L29/7371 , H01L29/78
摘要： Provided are bipolar transistor, BiCMOS device and method of fabricating thereof, in which an existing sub-collector disposed beneath a collector of a SiGe HBT is removed and a collector plug disposed at a lateral side of the collector is approached to a base when fabricating a Si-based very high-speed device, whereby it is possible to fabricate the SiGe HBT and an SOI CMOS on a single substrate, reduce the size of the device and the number of masks to be used, and implement the device of high density, low power consumption, and wideband performance.
摘要翻译：提供了双极晶体管，BiCMOS器件及其制造方法，其中去除了设置在SiGe HBT的集电极下方的现有子集电极，并且设置在集电极的横向侧的集电极端子在制造时基于Si的非常高速的器件，由此可以在单个衬底上制造SiGe HBT和SOI CMOS，减少器件的尺寸和使用的掩模的数量，并实现高密度的器件，低功耗，宽带性能。

6. 发明申请

US20050104127A1 Bipolar transistor, BiCMOS device, and method for fabricating thereof 审中-公开
标题翻译：双极晶体管，BiCMOS器件及其制造方法
公开(公告)号：US20050104127A1
公开(公告)日：2005-05-19
申请号：US10872593
申请日：2004-06-22
申请人： Jin Kang , Seung Lee , Kyoung Cho
发明人： Jin Kang , Seung Lee , Kyoung Cho
IPC分类号： H01L27/12 , H01L21/84 , H01L29/737 , H01L29/76
CPC分类号： H01L29/7378 , H01L21/84
摘要： Provided are bipolar transistor, BiCMOS device and method of fabricating thereof, in which an existing sub-collector disposed beneath a collector of a SiGe HBT is removed and a collector plug disposed at a lateral side of the collector is approached to a base when fabricating a Si-based very high-speed device, whereby it is possible to fabricate the SiGe HBT and an SOI CMOS on a single substrate, reduce the size of the device and the number of masks to be used, and implement the device of high density, low power consumption, and wideband performance.
摘要翻译：提供了双极晶体管，BiCMOS器件及其制造方法，其中去除了设置在SiGe HBT的集电极下方的现有子集电极，并且设置在集电极的横向侧的集电极端子在制造时基于Si的非常高速的器件，由此可以在单个衬底上制造SiGe HBT和SOI CMOS，减少器件的尺寸和使用的掩模的数量，并实现高密度的器件，低功耗，宽带性能。

7. 发明申请

US20050139921A1 NMOS device, PMOS device, and SiGe HBT device formed on SOI substrate and method of fabricating the same 有权
标题翻译： NMOS器件，PMOS器件和SOI衬底上形成的SiGe HBT器件及其制造方法
公开(公告)号：US20050139921A1
公开(公告)日：2005-06-30
申请号：US11019179
申请日：2004-12-23
申请人： Jin Kang , Seung Lee , Kyoung Cho
发明人： Jin Kang , Seung Lee , Kyoung Cho
IPC分类号： H01L27/092 , H01L21/331 , H01L21/8228 , H01L21/84 , H01L27/12 , H01L27/01
CPC分类号： H01L29/66242 , H01L21/84 , H01L27/1203
摘要： Provided are an NMOS device, a PMOS device and a SiGe HBT device which are implemented on an SOI substrate and a method of fabricating the same. In manufacturing a Si-based high speed device, a SiGe HBT and a CMOS are mounted on a single SOI substrate. In particular, a source and a drain of the CMOS are formed of SiGe and metal, and thus leakage current is prevented and low power consumption is achieved. Also, heat generation in a chip is suppressed, and a wide operation range may be obtained even at a low voltage.
摘要翻译：提供了在SOI衬底上实现的NMOS器件，PMOS器件和SiGe HBT器件及其制造方法。在制造Si基高速器件时，SiGe HBT和CMOS安装在单个SOI衬底上。特别地，CMOS的源极和漏极由SiGe和金属形成，因此防止漏电流并实现低功耗。此外，芯片中的发热被抑制，即使在低电压下也可以获得宽的工作范围。

8. 发明申请

US20050156682A1 Voltage-controlled oscillator using current feedback network 有权
标题翻译：使用电流反馈网络的压控振荡器
公开(公告)号：US20050156682A1
公开(公告)日：2005-07-21
申请号：US10957749
申请日：2004-10-05
申请人： Ja Lee , Sang Lee , Jin Kang , Seung Oh
发明人： Ja Lee , Sang Lee , Jin Kang , Seung Oh
IPC分类号： H03B5/08 , H03B1/00 , H03B5/12
CPC分类号： H03B5/1231 , H03B5/1215 , H03B5/1221 , H03B5/1243
摘要： Provided is a voltage-controlled oscillator (VCO) using a current feedback network for use in a wireless communication terminal. The voltage-controlled oscillator has high input impedance and low output impedance, so that a degree of isolation from the external load is excellent, thereby preventing degradation of the Q-factor by the load in overall oscillation circuit. In the voltage-controlled oscillator of the present invention, an LC resonator is provided to generate positive feedback, and negative resistance may be obtained at a wider frequency range by tuning a varactor of the LC resonator. And a boosting inductor is inserted into the positive feedback loop to have a greater negative resistance, therefore it is possible to prevent a problem in which the oscillation does not occur due to the parasitic resistance components generated during circuit fabrication.
摘要翻译：提供了一种使用电流反馈网络在无线通信终端中使用的压控振荡器（VCO）。压控振荡器具有高输入阻抗和低输出阻抗，使得与外部负载的隔离度优异，从而防止整个振荡电路中的负载对Q因子的劣化。在本发明的压控振荡器中，设置LC谐振器以产生正反馈，并且通过调谐LC谐振器的变容二极管可以在更宽的频率范围内获得负电阻。并且将增压电感器插入到正反馈回路中以具有更大的负电阻，因此可以防止由于在电路制造期间产生的寄生电阻分量而不发生振荡的问题。

9. 发明申请

US20150150464A1 Systems and Methods for Real-Time Tracking of Photoacoustic Sensing 有权
标题翻译：光声感测实时跟踪系统与方法
公开(公告)号：US20150150464A1
公开(公告)日：2015-06-04
申请号：US14561087
申请日：2014-12-04
申请人： Emad Boctor , Behnoosh Tavakoli , Hyun-Jae Kang , Xiaoyu Guo , Jin Kang
发明人： Emad Boctor , Behnoosh Tavakoli , Hyun-Jae Kang , Xiaoyu Guo , Jin Kang
IPC分类号： A61B5/00 , A61B8/08 , A61B19/00 , A61B5/01
CPC分类号： A61B5/0095 , A61B5/0084 , A61B5/015 , A61B5/4509 , A61B5/7246 , A61B5/7275 , A61B5/7282 , A61B8/12 , A61B8/485 , A61B8/5253 , A61B34/20 , A61B2034/2051 , A61B2034/2055 , A61B2576/02
摘要： Systems and methods for real-time tracking of photoacoustic sensing are provided. In one aspect, a method for performing in vivo analysis of a subject is provided. The method includes directing an electromagnetic excitation toward a subject to be analyzed, and acquiring, with an ultrasound probe, data about resultant waves caused by the electromagnetic excitation. The method also includes processing the acquired data to extract information related to properties of tissues in the subject, and comparing the information related to the properties of tissues in the subject using a set of criteria. The method also includes generating a report about a condition of the subject based on the comparison of the information related to properties of the tissues in the subject.
摘要翻译：提供了用于光声感测的实时跟踪的系统和方法。一方面，提供了一种用于进行受试者体内分析的方法。该方法包括向被分析对象引导电磁激励，并用超声波探头获取由电磁激励引起的合成波的数据。该方法还包括处理所获取的数据以提取与受试者中组织的属性相关的信息，并且使用一组标准来比较与对象中的组织的属性相关的信息。该方法还包括基于与对象中的组织的属性相关的信息的比较来生成关于对象的状况的报告。

10. 发明申请

US20130253313A1 AUTOFOCUSING ENDOSCOPE AND SYSTEM 审中-公开
标题翻译：自动注射内镜和系统
公开(公告)号：US20130253313A1
公开(公告)日：2013-09-26
申请号：US13813896
申请日：2011-08-02
申请人： Jin Kang , Marcin Arkadiusz Balicki , Rajesh Kumar , Russell H. Taylor
发明人： Jin Kang , Marcin Arkadiusz Balicki , Rajesh Kumar , Russell H. Taylor
IPC分类号： A61B1/00 , A61B3/10 , A61B1/07
CPC分类号： A61B1/00188 , A61B1/00004 , A61B1/00165 , A61B1/00172 , A61B1/0669 , A61B1/07 , A61B1/313 , A61B3/102 , A61B3/1225 , A61F9/007
摘要： An autofocusing endoscope includes an objective lens, a relay optical system arranged to relay an image between the objective lens and a proximal end of the autofocusing endoscope, an optical fiber arranged with a distal end proximate the objective lens, a light source arranged to couple light into the optical fiber, an optical detection system arranged to receive and detect light from the optical fiber, and a data processor constructed to communicate with the optical detection system while in operation. The data processor is configured to determine a distance of a surface to be imaged through the objective lens and provide instructions for adjusting a focus of the autofocusing endoscope of the surface.
摘要翻译：一种自动对焦内窥镜，包括：物镜;中继光学系统，被配置为中继所述物镜与所述自聚焦内窥镜的近端之间的图像，配置有靠近所述物镜的远端的光纤;光源，光纤检测系统被布置成接收和检测来自光纤的光;以及数据处理器，被构造成在操作中与光学检测系统进行通信。数据处理器被配置为确定要通过物镜成像的表面的距离，并提供用于调整表面的自动聚焦内窥镜的焦点的指令。

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