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1. 发明申请

US20050115946A1 Radical assisted oxidation apparatus 审中-公开
标题翻译：自由基辅助氧化装置
公开(公告)号：US20050115946A1
公开(公告)日：2005-06-02
申请号：US10817851
申请日：2004-04-06
申请人： Kyu Shim , Young Song , Sang Kim , Nae Lee , Jin Kang
发明人： Kyu Shim , Young Song , Sang Kim , Nae Lee , Jin Kang
IPC分类号： H01L21/205 , F27B5/14 , F27B17/00 , H01L21/00 , H01L21/316 , H01L21/44
CPC分类号： H01L21/67115 , F27B17/0025 , H01L21/02126 , H01L21/02178 , H01L21/02236 , H01L21/02255 , H01L21/02271 , H01L21/31662
摘要： Provided is a radical assisted oxidation apparatus comprising a gas supply system, a radical source, a growth chamber, a load lock chamber, and a vacuum system, whereby it is possible to manufacture a high quality oxide film at a low temperature and improve a low frequency noise (1/f).
摘要翻译：提供了一种自由基辅助氧化装置，其包括气体供给系统，自由基源，生长室，负载锁定室和真空系统，由此可以在低温下制造高质量的氧化物膜并且提高低频率噪声（1 / f）。

2. 发明申请

US20050006636A1 Optoelectronic device having dual-structural nano dot and method for manufacturing the same 有权
标题翻译：具有双结构纳米点的光电器件及其制造方法
公开(公告)号：US20050006636A1
公开(公告)日：2005-01-13
申请号：US10912614
申请日：2004-08-04
申请人： Kyu Shim , Young Song , Sang Kim , Jin Kang
发明人： Kyu Shim , Young Song , Sang Kim , Jin Kang
IPC分类号： H01L29/12 , H01L31/102 , H01L33/08 , H01L33/18 , H01L21/00 , H01L33/00
CPC分类号： H01L29/127 , B82Y10/00 , B82Y20/00 , H01L31/102 , H01L33/08 , H01L33/18
摘要： An optoelectronic device and a method of manufacturing the same which the optoelectronic effect such as light emission or light reception can be increased by forming a dual-structural nano dot to enhance the confinement density of electrons and holes are provided. The optoelectronic device comprises an electron injection layer, a nano dot, and a hole injection layer. The nano dot has a dual structure composed of an external nano dot and an internal dot. The method of manufacturing the optoelectronic device comprises the steps of forming an electron injection layer on a semiconductor substrate; growing nano dot layer on the electron injection layer by an epi-growth method; heating the nano dot layer so that the nano dot has a dual structure composed of an external nano dot and an internal nano dot; and forming a hole injection layer on the overall structure.
摘要翻译：提供了通过形成双结构纳米点以增强电子和空穴的限制密度来提高光发射或光接收等光电效应的光电子器件及其制造方法。光电子器件包括电子注入层，纳米点和空穴注入层。纳米点具有由外部纳米点和内部点组成的双重结构。制造光电器件的方法包括以下步骤：在半导体衬底上形成电子注入层; 通过外延生长法在电子注入层上生长纳米点层; 加热纳米点层，使得纳米点具有由外部纳米点和内部纳米点组成的双重结构; 并在整个结构上形成空穴注入层。

3. 发明申请

US20050196925A1 Method of forming stress-relaxed SiGe buffer layer 审中-公开
标题翻译：形成应力松弛SiGe缓冲层的方法
公开(公告)号：US20050196925A1
公开(公告)日：2005-09-08
申请号：US11018647
申请日：2004-12-22
申请人： Sang Kim , Kyu Shim , Jin Kang
发明人： Sang Kim , Kyu Shim , Jin Kang
IPC分类号： H01L29/739
CPC分类号： H01L29/7782 , H01L21/02381 , H01L21/0245 , H01L21/0251 , H01L21/02532 , H01L21/0262 , H01L29/1054 , H01L29/165 , H01L29/78
摘要： Provided is a method of forming a stress-relaxed SiGe buffer layer on a silicon substrate using a reduced pressure chemical vapor deposition (RPCVD) technique. The method includes: forming a graded composition layer having a predetermined germanium composition gradient on a silicon substrate; forming and thermally annealing a first constant composition layer having a predetermined germanium composition on the graded composition layer; removing the first constant composition layer by a predetermined thickness to planarize a surface; and forming a second constant composition layer on the first constant composition layer to form a SiGe buffer layer having the graded composition layer and the constant composition layer. A strained silicon or SiGe channel can be formed in a silicon-based MOSFET device or a MODFET device by forming the stress-relaxed SiGe buffer layer that has a relatively thin thickness, a low surface dislocation density, and a surface roughness similar to bulk silicon, and thus a device having excellent channel conductivity and high frequency characteristics can be manufactured.
摘要翻译：提供了使用减压化学气相沉积（RPCVD）技术在硅衬底上形成应力松弛SiGe缓冲层的方法。该方法包括：在硅衬底上形成具有预定锗组分梯度的梯度组合物层; 在梯度组合物层上形成并热退火具有预定锗组合物的第一恒定组成层; 将第一恒定组成层除去预定厚度以使表面平坦化; 以及在第一恒定组成层上形成第二恒定组成层以形成具有渐变组成层和恒定组成层的SiGe缓冲层。可以通过形成具有较薄厚度，低表面位错密度和与体硅相似的表面粗糙度的应力松弛SiGe缓冲层，在硅基MOSFET器件或MODFET器件中形成应变硅或SiGe沟道，因此可以制造具有优异的沟道导电性和高频特性的器件。

4. 发明申请

US20060121667A1 Method of fabricating SiGe Bi-CMOS device 失效
标题翻译：制造SiGe Bi-CMOS器件的方法
公开(公告)号：US20060121667A1
公开(公告)日：2006-06-08
申请号：US11283012
申请日：2005-11-18
申请人： Hyun Bae , Seung Lee , Sang Kim , Jin Kang
发明人： Hyun Bae , Seung Lee , Sang Kim , Jin Kang
IPC分类号： H01L21/8238
CPC分类号： H01L21/8249
摘要： Provided is a method of fabricating a silicon germanium (SiGe) Bi-CMOS device. In the fabrication method, the source and drain of the CMOS device is formed using a silicon germanium (SiGe) heterojunction, instead of silicon, thereby preventing a leakage current resulting from a parasitic bipolar operation. Further, since the source and drain is connected with an external interconnection through the nickel (Ni) silicide layer, the contact resistance is reduced, thereby preventing loss of a necessary voltage for a device operation and accordingly, making it possible to enable a low voltage and low power operation and securing a broad operation region even in a low voltage operation of an analogue circuit.
摘要翻译：提供一种制造硅锗（SiGe）Bi-CMOS器件的方法。在制造方法中，使用硅锗（SiGe）异质结代替硅形成CMOS器件的源极和漏极，从而防止由寄生双极性操作引起的漏电流。此外，由于源极和漏极通过镍（Ni）硅化物层与外部互连件连接，所以接触电阻降低，从而防止器件操作所需的电压的损失，并因此使得能够实现低电压并且即使在模拟电路的低电压操作下也能实现低功率操作并确保宽的操作区域。

5. 发明申请

US20060011872A1 Apparatus for focusing particle beam using radiation pressure 失效
标题翻译：使用辐射压力聚焦粒子束的装置
公开(公告)号：US20060011872A1
公开(公告)日：2006-01-19
申请号：US10976095
申请日：2004-10-27
申请人： Sang Kim , Hyung Park , Sang Kim
发明人： Sang Kim , Hyung Park , Sang Kim
IPC分类号： G01V8/00 , G01N21/86
CPC分类号： H01J27/024
摘要： The present invention relates to an apparatus for focusing particle beams using a radiation pressure capable of obtaining the same flow amount and a narrower particle beam width with respect to the particle size and a higher numeral density. It is possible to form the particle beams by applying the radiation pressure to the particles with respect to the flow condition that cannot form the particle beams with respect to the set particle sizes. There is provided an apparatus for focusing particle beams using a radiation pressure, comprising an orifice part that is provided at a predetermined portion of the flow tube, and a lens having a hole with a predetermined diameter for thereby focusing the particle flow into a particle beam and applying a radiation pressure to the flow particles; and a light source supply part (A) provided at a portion opposite to the discharge outlet of the mixing tube.
摘要翻译：本发明涉及一种使用能够获得相对于粒径和较高数字密度获得相同流量和较窄粒子束宽度的辐射压力来聚焦粒子束的装置。相对于不能相对于设定粒径形成粒子束的流动条件，向粒子施加辐射压力可以形成粒子束。提供了一种用于使用辐射压力聚焦粒子束的装置，包括设置在流量管的预定部分处的孔部分和具有预定直径的孔的透镜，从而将颗粒流聚焦成粒子束并向所述流动颗粒施加辐射压力; 以及设置在与混合管的排出口相对的部分处的光源供应部分（A）。

6. 发明公开

US20230315483A1 PROCESSOR CORE SUBSYSTEM WITH OPEN-STANDARD NETWORK-ON-CHIP PORTS 审中-公开
公开(公告)号：US20230315483A1
公开(公告)日：2023-10-05
申请号：US17712106
申请日：2022-04-02
申请人： Shih Jun Chong , Ignacio Celis , Krishnakumar Ganapathy , Sang Kim , Chuan Yin Loo , Sanjoy K. Mondal , Mukesh Patel , Arvind Raman , Joseph Rowlands , Shankar Narayanan Venkat Ramani
发明人： Shih Jun Chong , Ignacio Celis , Krishnakumar Ganapathy , Sang Kim , Chuan Yin Loo , Sanjoy K. Mondal , Mukesh Patel , Arvind Raman , Joseph Rowlands , Shankar Narayanan Venkat Ramani
IPC分类号： G06F9/4401 , G06F9/48 , G06F9/38 , G06F9/30
CPC分类号： G06F9/4405 , G06F9/4887 , G06F9/3877 , G06F9/30123
摘要： Embodiments of apparatuses, methods, and machine-readable mediums for a subsystem with open-standard network-on-chip ports are disclosed. In an embodiment, a machine-readable medium includes a design of an apparatus to be manufactured, the apparatus to include one or more cores, and a network-on-chip having at least one port of a first type and at least one port of a second type. The first type is to communicate with the one or more cores according to a proprietary protocol. The second type is to communicate with an intellectual property block according to an open-standard protocol.

7. 发明申请

US20130210538A1 GOLF TRAINING APPARATUS AND METHOD 审中-公开
标题翻译：高尔夫培训设备和方法
公开(公告)号：US20130210538A1
公开(公告)日：2013-08-15
申请号：US13724333
申请日：2012-12-21
申请人： Sang Kim , David Stowers
发明人： Sang Kim , David Stowers
IPC分类号： A63B69/36
CPC分类号： A63B69/3655 , A63B37/00 , A63B37/14 , A63B43/002 , A63B69/3688
摘要： Disclosed in certain embodiments is a golf training aid comprising a spheroid segment comprising a dimpled outer circumferential surface, a first base surface, and a second base surface.
摘要翻译：在某些实施例中公开的是一种高尔夫球训练辅助装置，其包括一个包括凹陷的外圆周表面，第一基面和第二基面的球体段。

8. 发明申请

US20130157773A1 GOLF TRAINING APPARATUS AND METHOD 有权
标题翻译：高尔夫培训设备和方法
公开(公告)号：US20130157773A1
公开(公告)日：2013-06-20
申请号：US13768345
申请日：2013-02-15
申请人： Sang Kim
发明人： Sang Kim
IPC分类号： A63B69/36
CPC分类号： A63B69/3688 , A63B37/00 , A63B37/14 , A63B43/002 , A63B2071/0694
摘要： Disclosed in certain embodiments is a golf training aid comprising a spheroid segment comprising a dimpled outer circumferential surface, a first substantially flat base surface, and a second substantially flat base surface, wherein the first substantially flat base surface and the second substantially flat base surface are substantially parallel to each other and are substantially equal in size.
摘要翻译：在某些实施例中公开的是一种高尔夫球训练辅助装置，其包括一个包括凹陷的外圆周表面，第一基本平坦的基面和第二基本平坦的基面的球体段，其中第一基本平坦的基面和第二基本平坦的基面是基本上彼此平行并且尺寸基本上相等。

9. 发明申请

US20130074200A2 INBRED C57BL/6 ES CELLS WITH HIGH DEVELOPMENTAL CAPACITY 审中-公开
标题翻译：具有高发展能力的INBRED C57BL / 6 ES细胞
公开(公告)号：US20130074200A2
公开(公告)日：2013-03-21
申请号：US13011799
申请日：2011-01-21
申请人： Sang Kim
发明人： Sang Kim
IPC分类号： A01K67/027 , C12N5/10 , C12N5/07
CPC分类号： C12N5/0606
摘要： Described herein are inbred B6 ES cell lines that exhibit high developmental capacities and have a number of advantages over ES cell lines already available. First, they can be used for gene targeting and have a high percentage of germline transmission when injected into diploid host blastocysts (˜50-80%). Second, these ES cell lines can successfully be used to generate live pups by tetraploid blastocyst complementation, producing a high percentage (15-20%) of mice that are entirely inbred B6 ES cell derived. Third, these ES cells lines can be used to rapidly generate mice that are homozygous for a gene of interest. These advantages indicate that the inbred B6 ES cells provided here facilitate the rapid generation of inbred B6 mouse models in a cost-effective and efficient manner.
摘要翻译：本文描述的是具有高发育能力并且已经具有优于已经可获得的ES细胞系的许多优点的近交B6ES细胞系。首先，它们可以用于基因靶向，并且当注射到二倍体宿主胚泡（〜50-80％）时具有高百分比的种系传播。第二，这些ES细胞系可以成功地用于通过四倍体囊胚互补产生活的幼崽，产生高百分比（15-20％）完全近交B6ES细胞来源的小鼠。第三，这些ES细胞系可用于快速产生对于感兴趣的基因是纯合的小鼠。这些优点表明，这里提供的近交B6 ES细胞有助于以成本效益高效的方式快速生成近交B6小鼠模型。

10. 发明申请

US20080084818A1 BROADCAST AND MULTICAST SERVICES (BCMCS) FOR ORTHOGONAL FREQUENCY DIVISION MULTIPLEXING (OFDM)-BASED MOBILE BROADBAND WIRELESS CELLULAR SYSTEMS 有权
标题翻译：用于正交频分多址（OFDM）的移动宽带宽带无线蜂窝系统的广播和多播服务（BCMCS）
公开(公告)号：US20080084818A1
公开(公告)日：2008-04-10
申请号：US11841572
申请日：2007-08-20
申请人： Young Yoon , Li-Hsiang Sun , Suk Lee , Sang Kim
发明人： Young Yoon , Li-Hsiang Sun , Suk Lee , Sang Kim
IPC分类号： H04J11/00 , H04H20/00 , H04J3/00 , H04J1/00
CPC分类号： H04L5/023 , H04L1/0618 , H04L27/2602 , H04L27/2607 , H04L27/261 , H04W72/005
摘要： Methods are provided for transmitting BCMCS in mobile broadband wireless cellular systems under development.
摘要翻译：提供了用于在正在开发的移动宽带无线蜂窝系统中传输BCMCS的方法。

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