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1. 发明申请

US20050115946A1 Radical assisted oxidation apparatus 审中-公开
标题翻译：自由基辅助氧化装置
公开(公告)号：US20050115946A1
公开(公告)日：2005-06-02
申请号：US10817851
申请日：2004-04-06
申请人： Kyu Shim , Young Song , Sang Kim , Nae Lee , Jin Kang
发明人： Kyu Shim , Young Song , Sang Kim , Nae Lee , Jin Kang
IPC分类号： H01L21/205 , F27B5/14 , F27B17/00 , H01L21/00 , H01L21/316 , H01L21/44
CPC分类号： H01L21/67115 , F27B17/0025 , H01L21/02126 , H01L21/02178 , H01L21/02236 , H01L21/02255 , H01L21/02271 , H01L21/31662
摘要： Provided is a radical assisted oxidation apparatus comprising a gas supply system, a radical source, a growth chamber, a load lock chamber, and a vacuum system, whereby it is possible to manufacture a high quality oxide film at a low temperature and improve a low frequency noise (1/f).
摘要翻译：提供了一种自由基辅助氧化装置，其包括气体供给系统，自由基源，生长室，负载锁定室和真空系统，由此可以在低温下制造高质量的氧化物膜并且提高低频率噪声（1 / f）。

2. 发明申请

US20050006636A1 Optoelectronic device having dual-structural nano dot and method for manufacturing the same 有权
标题翻译：具有双结构纳米点的光电器件及其制造方法
公开(公告)号：US20050006636A1
公开(公告)日：2005-01-13
申请号：US10912614
申请日：2004-08-04
申请人： Kyu Shim , Young Song , Sang Kim , Jin Kang
发明人： Kyu Shim , Young Song , Sang Kim , Jin Kang
IPC分类号： H01L29/12 , H01L31/102 , H01L33/08 , H01L33/18 , H01L21/00 , H01L33/00
CPC分类号： H01L29/127 , B82Y10/00 , B82Y20/00 , H01L31/102 , H01L33/08 , H01L33/18
摘要： An optoelectronic device and a method of manufacturing the same which the optoelectronic effect such as light emission or light reception can be increased by forming a dual-structural nano dot to enhance the confinement density of electrons and holes are provided. The optoelectronic device comprises an electron injection layer, a nano dot, and a hole injection layer. The nano dot has a dual structure composed of an external nano dot and an internal dot. The method of manufacturing the optoelectronic device comprises the steps of forming an electron injection layer on a semiconductor substrate; growing nano dot layer on the electron injection layer by an epi-growth method; heating the nano dot layer so that the nano dot has a dual structure composed of an external nano dot and an internal nano dot; and forming a hole injection layer on the overall structure.
摘要翻译：提供了通过形成双结构纳米点以增强电子和空穴的限制密度来提高光发射或光接收等光电效应的光电子器件及其制造方法。光电子器件包括电子注入层，纳米点和空穴注入层。纳米点具有由外部纳米点和内部点组成的双重结构。制造光电器件的方法包括以下步骤：在半导体衬底上形成电子注入层; 通过外延生长法在电子注入层上生长纳米点层; 加热纳米点层，使得纳米点具有由外部纳米点和内部纳米点组成的双重结构; 并在整个结构上形成空穴注入层。

3. 发明申请

US20050196925A1 Method of forming stress-relaxed SiGe buffer layer 审中-公开
标题翻译：形成应力松弛SiGe缓冲层的方法
公开(公告)号：US20050196925A1
公开(公告)日：2005-09-08
申请号：US11018647
申请日：2004-12-22
申请人： Sang Kim , Kyu Shim , Jin Kang
发明人： Sang Kim , Kyu Shim , Jin Kang
IPC分类号： H01L29/739
CPC分类号： H01L29/7782 , H01L21/02381 , H01L21/0245 , H01L21/0251 , H01L21/02532 , H01L21/0262 , H01L29/1054 , H01L29/165 , H01L29/78
摘要： Provided is a method of forming a stress-relaxed SiGe buffer layer on a silicon substrate using a reduced pressure chemical vapor deposition (RPCVD) technique. The method includes: forming a graded composition layer having a predetermined germanium composition gradient on a silicon substrate; forming and thermally annealing a first constant composition layer having a predetermined germanium composition on the graded composition layer; removing the first constant composition layer by a predetermined thickness to planarize a surface; and forming a second constant composition layer on the first constant composition layer to form a SiGe buffer layer having the graded composition layer and the constant composition layer. A strained silicon or SiGe channel can be formed in a silicon-based MOSFET device or a MODFET device by forming the stress-relaxed SiGe buffer layer that has a relatively thin thickness, a low surface dislocation density, and a surface roughness similar to bulk silicon, and thus a device having excellent channel conductivity and high frequency characteristics can be manufactured.
摘要翻译：提供了使用减压化学气相沉积（RPCVD）技术在硅衬底上形成应力松弛SiGe缓冲层的方法。该方法包括：在硅衬底上形成具有预定锗组分梯度的梯度组合物层; 在梯度组合物层上形成并热退火具有预定锗组合物的第一恒定组成层; 将第一恒定组成层除去预定厚度以使表面平坦化; 以及在第一恒定组成层上形成第二恒定组成层以形成具有渐变组成层和恒定组成层的SiGe缓冲层。可以通过形成具有较薄厚度，低表面位错密度和与体硅相似的表面粗糙度的应力松弛SiGe缓冲层，在硅基MOSFET器件或MODFET器件中形成应变硅或SiGe沟道，因此可以制造具有优异的沟道导电性和高频特性的器件。

4. 发明申请

US20060028279A1 Automatic gain control feedback amplifier 有权
标题翻译：自动增益控制反馈放大器
公开(公告)号：US20060028279A1
公开(公告)日：2006-02-09
申请号：US10995033
申请日：2004-11-23
申请人： Sang Lee , Hyeon Ki , Jin Kang , Kyu Shim , Kyoung Cho
发明人： Sang Lee , Hyeon Ki , Jin Kang , Kyu Shim , Kyoung Cho
IPC分类号： H03F3/08
CPC分类号： H03F3/08 , H03F1/34 , H03F3/3432 , H03F3/50 , H03G3/3084
摘要： There is provided a feedback amplifier capable of easily controlling its dynamic range without a separate gain control signal generation circuit. The feedback amplifier includes an input terminal detecting an input voltage from input current, a feedback amplification unit amplifying the input voltage to generate an output signal, and an output terminal outputting a signal amplified by the feedback amplification unit. The feedback amplification unit includes a feedback circuit unit including a feedback resistor located between the input terminal and the output terminal, and a feedback transistor connected in parallel to the feedback resistor; and a bias circuit unit supplying a predetermined bias voltage to the feedback transistor of the feedback circuit unit and merged in the feedback amplification unit.
摘要翻译：提供了一种反馈放大器，其能够在没有单独的增益控制信号产生电路的情况下容易地控制其动态范围。反馈放大器包括检测来自输入电流的输入电压的输入端子，放大输入电压以产生输出信号的反馈放大单元以及输出由反馈放大单元放大的信号的输出端子。反馈放大单元包括反馈电路单元，该反馈电路单元包括位于输入端子和输出端子之间的反馈电阻器和与反馈电阻器并联连接的反馈晶体管; 以及偏置电路单元，向反馈电路单元的反馈晶体管提供预定的偏置电压并且合并在反馈放大单元中。

5. 发明申请

US20060121667A1 Method of fabricating SiGe Bi-CMOS device 失效
标题翻译：制造SiGe Bi-CMOS器件的方法
公开(公告)号：US20060121667A1
公开(公告)日：2006-06-08
申请号：US11283012
申请日：2005-11-18
申请人： Hyun Bae , Seung Lee , Sang Kim , Jin Kang
发明人： Hyun Bae , Seung Lee , Sang Kim , Jin Kang
IPC分类号： H01L21/8238
CPC分类号： H01L21/8249
摘要： Provided is a method of fabricating a silicon germanium (SiGe) Bi-CMOS device. In the fabrication method, the source and drain of the CMOS device is formed using a silicon germanium (SiGe) heterojunction, instead of silicon, thereby preventing a leakage current resulting from a parasitic bipolar operation. Further, since the source and drain is connected with an external interconnection through the nickel (Ni) silicide layer, the contact resistance is reduced, thereby preventing loss of a necessary voltage for a device operation and accordingly, making it possible to enable a low voltage and low power operation and securing a broad operation region even in a low voltage operation of an analogue circuit.
摘要翻译：提供一种制造硅锗（SiGe）Bi-CMOS器件的方法。在制造方法中，使用硅锗（SiGe）异质结代替硅形成CMOS器件的源极和漏极，从而防止由寄生双极性操作引起的漏电流。此外，由于源极和漏极通过镍（Ni）硅化物层与外部互连件连接，所以接触电阻降低，从而防止器件操作所需的电压的损失，并因此使得能够实现低电压并且即使在模拟电路的低电压操作下也能实现低功率操作并确保宽的操作区域。

6. 发明申请

US20150150464A1 Systems and Methods for Real-Time Tracking of Photoacoustic Sensing 有权
标题翻译：光声感测实时跟踪系统与方法
公开(公告)号：US20150150464A1
公开(公告)日：2015-06-04
申请号：US14561087
申请日：2014-12-04
申请人： Emad Boctor , Behnoosh Tavakoli , Hyun-Jae Kang , Xiaoyu Guo , Jin Kang
发明人： Emad Boctor , Behnoosh Tavakoli , Hyun-Jae Kang , Xiaoyu Guo , Jin Kang
IPC分类号： A61B5/00 , A61B8/08 , A61B19/00 , A61B5/01
CPC分类号： A61B5/0095 , A61B5/0084 , A61B5/015 , A61B5/4509 , A61B5/7246 , A61B5/7275 , A61B5/7282 , A61B8/12 , A61B8/485 , A61B8/5253 , A61B34/20 , A61B2034/2051 , A61B2034/2055 , A61B2576/02
摘要： Systems and methods for real-time tracking of photoacoustic sensing are provided. In one aspect, a method for performing in vivo analysis of a subject is provided. The method includes directing an electromagnetic excitation toward a subject to be analyzed, and acquiring, with an ultrasound probe, data about resultant waves caused by the electromagnetic excitation. The method also includes processing the acquired data to extract information related to properties of tissues in the subject, and comparing the information related to the properties of tissues in the subject using a set of criteria. The method also includes generating a report about a condition of the subject based on the comparison of the information related to properties of the tissues in the subject.
摘要翻译：提供了用于光声感测的实时跟踪的系统和方法。一方面，提供了一种用于进行受试者体内分析的方法。该方法包括向被分析对象引导电磁激励，并用超声波探头获取由电磁激励引起的合成波的数据。该方法还包括处理所获取的数据以提取与受试者中组织的属性相关的信息，并且使用一组标准来比较与对象中的组织的属性相关的信息。该方法还包括基于与对象中的组织的属性相关的信息的比较来生成关于对象的状况的报告。

7. 发明申请

US20130253313A1 AUTOFOCUSING ENDOSCOPE AND SYSTEM 审中-公开
标题翻译：自动注射内镜和系统
公开(公告)号：US20130253313A1
公开(公告)日：2013-09-26
申请号：US13813896
申请日：2011-08-02
申请人： Jin Kang , Marcin Arkadiusz Balicki , Rajesh Kumar , Russell H. Taylor
发明人： Jin Kang , Marcin Arkadiusz Balicki , Rajesh Kumar , Russell H. Taylor
IPC分类号： A61B1/00 , A61B3/10 , A61B1/07
CPC分类号： A61B1/00188 , A61B1/00004 , A61B1/00165 , A61B1/00172 , A61B1/0669 , A61B1/07 , A61B1/313 , A61B3/102 , A61B3/1225 , A61F9/007
摘要： An autofocusing endoscope includes an objective lens, a relay optical system arranged to relay an image between the objective lens and a proximal end of the autofocusing endoscope, an optical fiber arranged with a distal end proximate the objective lens, a light source arranged to couple light into the optical fiber, an optical detection system arranged to receive and detect light from the optical fiber, and a data processor constructed to communicate with the optical detection system while in operation. The data processor is configured to determine a distance of a surface to be imaged through the objective lens and provide instructions for adjusting a focus of the autofocusing endoscope of the surface.
摘要翻译：一种自动对焦内窥镜，包括：物镜;中继光学系统，被配置为中继所述物镜与所述自聚焦内窥镜的近端之间的图像，配置有靠近所述物镜的远端的光纤;光源，光纤检测系统被布置成接收和检测来自光纤的光;以及数据处理器，被构造成在操作中与光学检测系统进行通信。数据处理器被配置为确定要通过物镜成像的表面的距离，并提供用于调整表面的自动聚焦内窥镜的焦点的指令。

8. 发明申请

US20050017498A1 Pillar anchor and method for manufacturing the same 审中-公开
标题翻译：支柱锚及其制造方法
公开(公告)号：US20050017498A1
公开(公告)日：2005-01-27
申请号：US10897259
申请日：2004-07-22
申请人： Jin Kang
发明人： Jin Kang
IPC分类号： B60R22/24 , B60R22/00
CPC分类号： B21D53/88 , B21D35/00 , B60R22/24
摘要： The present invention relates to an improved pillar anchor and a method for manufacturing the same. According to the pillar anchor of the present invention described as above and the method for manufacturing the same, the rims of the pair of separated base plates abut each other, so that the surface in contact with the belt is formed in a “C”-shape. Thus, it is simple to manufacture the pillar anchor of the present invention, and moreover, the number of processes needed for manufacture is reduced. In addition, since the inner peripheral surfaces of the belt insertion holes around which the belt is wound are generally formed of only a steel plate, the friction coefficient between the belt and the inner peripheral surfaces of the belt insertion holes is reduced. Accordingly, when the belt is subjected to tension, damage caused from wear and tear of the belt due to the friction between the belt and the inner peripheral surfaces of the belt insertion holes is effectively reduced. Moreover, the belt can smoothly moves on the inner peripheral surfaces of the belt insertion holes.
摘要翻译：本发明涉及一种改进的支柱锚及其制造方法。根据如上所述的本发明的支柱锚及其制造方法，一对分离的基板的边缘彼此邻接，使得与带接触的表面形成为“C”形，形状。因此，制造本发明的支柱锚固件变得简单，此外，减少制造所需的工序数量。此外，由于带卷绕的带插入孔的内周面通常仅由钢板形成，所以带与带插入孔的内周面之间的摩擦系数降低。因此，当带受到张力时，由于带与带插入孔的内周面之间的摩擦而导致的带的磨损造成的损伤被有效地减少。此外，带可以在带插入孔的内周面上平滑地移动。

9. 发明授权

US6107396A Method of preparing a composite of organic and inorganic compounds 有权
标题翻译：制备有机和无机化合物复合物的方法
公开(公告)号：US6107396A
公开(公告)日：2000-08-22
申请号：US192864
申请日：1998-11-16
申请人： Ho-jin Kweon , Sung-soo Kim , Dong-gon Park , Jin Kang , Hye-young Kwon
发明人： Ho-jin Kweon , Sung-soo Kim , Dong-gon Park , Jin Kang , Hye-young Kwon
IPC分类号： C08K3/22 , C07C29/70 , C08F2/00 , C08L83/02 , C08J5/05
CPC分类号： C07C29/70
摘要： A method of preparing a composite of organic and inorganic compounds includes the steps of reacting a mixed solution of a metal alkoxide and a silicon-containing compound with a catalyst to produce an alcogel of a metal oxide or a complex metal oxide. The metal alkoxide is prepared by reacting at least one metal with an alcohol and the mixed solution is prepared by mixing the metal alkoxide with the silicon-containing compound. An alcogel is produced from the reacting step and alcohol is impregnated within the inorganic oxide lattice structure of the alcogel. Furthermore, the method of preparing a composite of an organic and an inorganic compound includes the steps of centrifuging the alcogel to separate any alcohol from the alcogel to form a gel, adding an organic monomer the gel and polymerizing the organic monomer in-situ to form an organic polymer. The resulting composite has characteristics of both the parent organic and inorganic compounds.
摘要翻译：制备有机和无机化合物复合物的方法包括使金属醇盐和含硅化合物的混合溶液与催化剂反应以产生金属氧化物或复合金属氧化物的醇酸盐的步骤。金属醇盐通过使至少一种金属与醇反应制备，并且通过将金属醇盐与含硅化合物混合来制备混合溶液。由反应步骤产生酸酐，并将醇浸渍在铝酸盐的无机氧化物晶格结构内。此外，制备有机和无机化合物的复合物的方法包括以下步骤：离心凝胶以从凝胶中分离任何醇以形成凝胶，加入有机单体凝胶并原位聚合有机单体以形成有机聚合物。所得复合材料具有母体有机和无机化合物的特征。

10. 发明授权

US09723995B2 Systems and methods for real-time tracking of photoacoustic sensing 有权
公开(公告)号：US09723995B2
公开(公告)日：2017-08-08
申请号：US14561087
申请日：2014-12-04
申请人： Emad Boctor , Behnoosh Tavakoli , Hyun-Jae Kang , Xiaoyu Guo , Jin Kang
发明人： Emad Boctor , Behnoosh Tavakoli , Hyun-Jae Kang , Xiaoyu Guo , Jin Kang
IPC分类号： A61B8/12 , A61B5/00 , A61B8/08 , A61B5/01 , A61B34/20
CPC分类号： A61B5/0095 , A61B5/0084 , A61B5/015 , A61B5/4509 , A61B5/7246 , A61B5/7275 , A61B5/7282 , A61B8/12 , A61B8/485 , A61B8/5253 , A61B34/20 , A61B2034/2051 , A61B2034/2055 , A61B2576/02
摘要： Systems and methods for real-time tracking of photoacoustic sensing are provided. In one aspect, a method for performing in vivo analysis of a subject is provided. The method includes directing an electromagnetic excitation toward a subject to be analyzed, and acquiring, with an ultrasound probe, data about resultant waves caused by the electromagnetic excitation. The method also includes processing the acquired data to extract information related to properties of tissues in the subject, and comparing the information related to the properties of tissues in the subject using a set of criteria. The method also includes generating a report about a condition of the subject based on the comparison of the information related to properties of the tissues in the subject.

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