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1. 发明申请

WO2011081368A2 VAPORIZATION APPARATUS AND METHOD FOR CONTROLLING THE SAME 审中-公开
标题翻译：蒸发装置及其控制方法
公开(公告)号：WO2011081368A2
公开(公告)日：2011-07-07
申请号：PCT/KR2010009316
申请日：2010-12-24
申请人： SNU PRECISION CO LTD , SEO SEUNG CHEOL , GONG DOO WON , LEE JONG HA , LEE KYUNG BUM , JUNG SUNG JAE , CHO WHANG SIN
发明人： SEO SEUNG CHEOL , GONG DOO WON , LEE JONG HA , LEE KYUNG BUM , JUNG SUNG JAE , CHO WHANG SIN
IPC分类号： C23C14/24
CPC分类号： C23C16/4485 , B01D1/0017 , B01D1/0082 , C23C14/24 , C23C14/543 , C23C16/52
摘要： Disclosed are a vaporization apparatus and a control method for the same. The vaporization apparatus includes a vaporization crucible adapted to receive a raw material; a vaporization heating unit adapted to vaporize the raw material by heating the vaporization crucible; a temperature measuring unit adapted to measure temperature of the vaporization crucible; a power measuring unit adapted to measure an applied power of the vaporization heating unit; and a control unit adapted to control a vaporization quantity of the raw material based on any one of a temperature variation value of the temperature measuring unit and a power variation value of the power measuring unit. The vaporization apparatus uses a non-contact/electronic method which measures a vaporization quantity through a temperature variation value and a power variation value during vaporization of a raw material. Therefore, since, differently from a contact method, a vaporization quantity measuring unit does not directly contact a raw material gas, various raw materials can be supplied and large quantity raw material supply or long time raw material supply can be achieved without deterioration of the function. In addition, preciseness of the raw material supply may be enhanced since the electronic method is capable of precise measurement of the vaporization quantity.
摘要翻译：公开了一种蒸发装置及其控制方法。蒸发装置包括适于容纳原料的蒸发坩埚; 蒸发加热单元，其适于通过加热所述蒸发坩埚来蒸发所述原料; 适于测量蒸发坩埚的温度的温度测量单元; 功率测量单元，适于测量蒸发加热单元的施加功率; 以及控制单元，其适于基于所述温度测量单元的温度变化值和所述功率测量单元的功率变化值中的任一个来控制所述原材料的蒸发量。蒸发装置使用在原料蒸发期间通过温度变化值和功率变化值来测量蒸发量的非接触/电子方法。因此，与接触方法不同的是，蒸发量测量单元不直接接触原料气体，可以供给各种原料，并且可以实现大量的原料供给或长时间的原料供应而不会降低功能。此外，由于电子方法能够精确地测量蒸发量，所以可以提高原料供应的精度。

2. 发明申请

WO2011093617A3 VACUUM DEPOSITION APPARATUS 审中-公开
标题翻译：真空沉积装置
公开(公告)号：WO2011093617A3
公开(公告)日：2011-12-08
申请号：PCT/KR2011000423
申请日：2011-01-21
申请人： SNU PRECISION CO LTD , BAK BYEONG MIN , GONG DOO WON , KWON JIN HAON , JUNG YONG BEOM , CHO WHANG SIN , JUNG SUNG JAE
发明人： BAK BYEONG MIN , GONG DOO WON , KWON JIN HAON , JUNG YONG BEOM , CHO WHANG SIN , JUNG SUNG JAE
IPC分类号： H01L21/205
CPC分类号： C23C14/56 , C23C16/4412 , C23C16/54
摘要： Disclosed is a vacuum deposition apparatus, which comprises: a chamber mounted with a source for jetting an application material in the gaseous state for deposition onto a substrate; heaters formed to the inner wall of the chamber and internal parts; a pump for aspirating air out of the chamber; and a plurality of cold traps interposed between the chamber and the pump for cooling the air aspirated by the pump to remove the application material from the air. According to the vacuum deposition apparatus, it is possible to prevent direct damage to the internal parts or the inner wall of the chamber by application materials accumulated thereon. Additionally, the plurality of cold traps prevent pollution and stoppage in continuous production which allows substitution to be carried out without stoppage. Therefore, productivity may be improved compared to other equipment with similar specifications.
摘要翻译：公开了一种真空沉积设备，其包括：腔室，其安装有用于喷射处于气态的涂覆材料以沉积到基板上的源; 形成在腔室内壁和内部部件上的加热器; 用于将空气抽出腔室的泵; 以及置于腔室和泵之间的多个冷阱，用于冷却由泵吸入的空气以从空气中除去涂敷材料。根据该真空蒸镀装置，能够防止堆积的涂布材料直接损伤腔室内部或内壁。此外，多个冷阱在连续生产中防止污染和停止，这允许在不停止的情况下进行替代。因此，与具有类似规格的其他设备相比，生产率可能会提高。

3. 发明申请

WO2011043566A3 APPARATUS AND METHOD FOR PROCESSING SUBSTRATE 审中-公开
标题翻译：装置和处理基板的方法
公开(公告)号：WO2011043566A3
公开(公告)日：2011-11-03
申请号：PCT/KR2010006749
申请日：2010-10-04
申请人： SNU PRECISION CO LTD , BAK BYEONG-MIN , GONG DOO WON , SON SUNG KWAN , CHO WHANG SIN , JUNG SUNG JAE , PAHK HEUI JAE
发明人： BAK BYEONG-MIN , GONG DOO WON , SON SUNG KWAN , CHO WHANG SIN , JUNG SUNG JAE , PAHK HEUI JAE
IPC分类号： H01L21/20 , H01L31/042
CPC分类号： H01L21/6776 , C23C16/4401 , C23C16/4411 , C23C16/45563 , C23C16/4557 , C23C16/54 , H01L21/6715
摘要： There is provided a substrate processing apparatus and method capable of preventing the substrate from being heated and efficiently collecting residual deposition material. The substrate processing apparatus includes a chamber unit including an inner space divided into an introduction section, a film formation section, and a discharge section, at least one material injection nozzle unit disposed in the film formation section of the chamber unit to inject a deposition material to a substrate being transferred, and a cooling plate unit disposed to surround the film formation section of the chamber unit and adapted to cool inside of the film formation section. In addition, the substrate processing apparatus further includes at least one cold trap unit disposed at a lower part of the material injection nozzle unit to collect residual deposition material not deposited on the substrate but left from the whole deposition material injected from the material injection nozzle unit.
摘要翻译：提供了能够防止基板被加热并有效地收集残留沉积材料的基板处理装置和方法。基板处理装置包括：室单元，包括分为导入部，成膜部和排出部的内部空间;至少一个注入喷嘴单元，设置在室单元的成膜部中，以将沉积材料到被转印的基板，以及冷却板单元，设置成围绕室单元的成膜部分并且适于在成膜部分内部冷却。此外，基板处理装置还包括至少一个冷阱单元，其设置在材料注入喷嘴单元的下部，以收集未沉积在基板上但留在从材料注入喷嘴单元注入的整个沉积材料的残留沉积材料。

4. 发明申请

WO2010110615A3 SOURCE SUPPLYING UNIT, METHOD FOR SUPPLYING SOURCE, AND THIN FILM DEPOSITING APPARATUS 审中-公开
标题翻译：源供应单元，供应源的方法和薄膜沉积设备
公开(公告)号：WO2010110615A3
公开(公告)日：2010-12-09
申请号：PCT/KR2010001849
申请日：2010-03-26
申请人： SNU PRECISION CO LTD , BAE KYUNG BIN , RHO JUN SEO , CHO WHANG SIN , KWON JIN HAON , LEE JONG HA , KIM YOU HYUN , YOON HYUNG SEOK
发明人： BAE KYUNG BIN , RHO JUN SEO , CHO WHANG SIN , KWON JIN HAON , LEE JONG HA , KIM YOU HYUN , YOON HYUNG SEOK
IPC分类号： H01L21/203
CPC分类号： H01L21/67115 , C23C14/243 , C23C14/26 , H01L21/67109
摘要： Provided are a source supplying unit and a method for supplying a source. The source supplying unit includes a pot configured to store a source material, an injector communicating with the pot to inject the source material evaporated from the pot, a high frequency coil part surrounding an outside of the pot, and a resistance-type heating part disposed at an outside of the injector. Since a high frequency induction heating method and a resistance-type heating method are combined to evaporate a source material to be supplied, a large amount of source material can be used, and the thickness and quality of a thin film can be easily controlled.
摘要翻译：提供了一种源供应单元和一种用于供应源的方法。所述源供应单元包括：罐，其被配置为存储源材料;喷射器，其与所述罐连通以喷射从所述罐蒸发的所述源材料;围绕所述罐的外部的高频线圈部分;以及布置的电阻型加热部分在注射器的外部。由于高频感应加热法和电阻式加热法相结合以蒸发待供给的源材料，所以可以使用大量的源材料，并且可以容易地控制薄膜的厚度和质量。

5. 发明申请

WO2010126254A3 SOURCE SUPPLYING UNIT, THIN FILM DEPOSITING APPARATUS, AND METHOD FOR DEPOSITING THIN FILM 审中-公开
标题翻译：源提供单元，薄膜沉积装置和沉积薄膜的方法
公开(公告)号：WO2010126254A3
公开(公告)日：2011-01-20
申请号：PCT/KR2010002543
申请日：2010-04-23
申请人： SNU PRECISION CO LTD , KANG CHANG HO , NAMGOONG SUNG TAE , RHO JUN SEO , CHO WHANG SIN , YOON HYUNG SEOK , BAE KYUNG BIN
发明人： KANG CHANG HO , NAMGOONG SUNG TAE , RHO JUN SEO , CHO WHANG SIN , YOON HYUNG SEOK , BAE KYUNG BIN
IPC分类号： H01L21/205 , H01L21/02
CPC分类号： C23C14/246 , H01L21/67115
摘要： Provided are a source supplying unit, a thin film depositing apparatus including the source supplying unit, and a method for depositing a thin film. The source supplying unit includes a liquefaction part configured to liquefy a source material, an evaporation part communicating with the liquefaction part to evaporate the liquefied source material, and an injector communicating with the evaporation part to inject the evaporated source material. The liquefaction part includes a pot having a cylinder shape to store the source material, a piston part inserted to a side of the pot to discharge the source material, and a liquefaction heating part configured to heat the pot to liquefy the source material. After a solid source material is liquefied, a necessary portion is evaporated from the source material and supplied, thus achieving large capacity in source material and minimizing the amount of heat consumed for evaporating and supplying the source material.
摘要翻译：提供源供给单元，包括源供给单元的薄膜沉积设备和用于沉积薄膜的方法。源供给单元包括：液化部，其构成为液化源材料，与液化部连通以蒸发液化源材料的蒸发部;以及与蒸发部连通以喷射蒸发的原料的喷射器。液化部分包括一个具有圆筒形状以储存源材料的罐，一个插入锅的一侧以排放源材料的活塞部分，以及液化加热部分，其构造成加热该罐以使该源材料液化。在固体源材料液化后，从源材料中蒸发必要的部分并供应，从而实现源材料的大容量并最小化用于蒸发和供应源材料的消耗热量。

6. 发明专利

JP2013139637A Continuous thin film vapor deposition apparatus 有权
标题翻译：连续薄膜蒸气沉积装置
公开(公告)号：JP2013139637A
公开(公告)日：2013-07-18
申请号：JP2012286188
申请日：2012-12-27
申请人： Snu Precision Co Ltd , エスエヌユープレシジョンカンパニーリミテッド
发明人： LEE HYOUNG BAE , JUNG KI TAEK , CHO WHANG SIN , YOON SUNG HOON
IPC分类号： C23C14/24 , H01L51/50 , H05B33/10
摘要： PROBLEM TO BE SOLVED: To provide a continuous thin film vapor deposition apparatus capable of vapor deposition in a thin-film form on a substrate by evaporating an organic material for a long time.SOLUTION: The continuous thin film vapor deposition apparatus includes a material storage part, a material preheat part, a material transport part, a material evaporation part, and a crucible transport part. In the material storage part, an organic material is stored. In the material preheat part, a crucible, in which the organic material is contained, is preheated to a temperature less than the vaporization point of the organic material. In the material transport part, a fixed quantity of the organic material is delivered from the material storage part, and the organic material is conveyed to the crucible arranged in the material preheat part. In the material evaporation part, the organic material contained in the crucible is evaporated by supplying the transported crucible with heat. In the crucible transport part, the crucible preheated in the material preheat part is carried in the material evaporation part or the crucible whose organic material is consumed is carried out of the material evaporation part.
摘要翻译：要解决的问题：提供能够通过长时间蒸发有机材料在基板上以薄膜形式气相沉积的连续薄膜蒸镀装置。解决方案：连续薄膜气相沉积装置包括材料储存部件，材料预热部件，材料输送部件，材料蒸发部件和坩埚输送部件。在材料储存部分中存储有机材料。在材料预热部分中，将含有有机材料的坩埚预热到低于有机材料的蒸发点的温度。在材料输送部中，从材料收纳部输送固定量的有机材料，将有机材料输送到布置在材料预热部上的坩埚。在材料蒸发部件中，通过向运送的坩埚供热来蒸发坩埚中所含的有机材料。在坩埚输送部中，在材料预热部中预热的坩埚被载置在材料蒸发部或由有机材料消耗的坩埚从材料蒸发部进行的情况下。

7. 发明专利

JP2013104131A Flat panel manufacturing apparatus 审中-公开
标题翻译：平板制造设备
公开(公告)号：JP2013104131A
公开(公告)日：2013-05-30
申请号：JP2012237278
申请日：2012-10-26
申请人： Snu Precision Co Ltd , エスエヌユー精密股▲ふん▼有限公司
发明人： LEE HYOUNG BAE , CHO WHANG SIN , AHN WOO JUNG , SONG KI CHUL
IPC分类号： C23C14/24 , C23C14/56 , H01L51/50 , H05B33/10
摘要： PROBLEM TO BE SOLVED: To provide a flat panel manufacturing apparatus that can minimize the entire process time for depositing an organic thin film onto a substrate.SOLUTION: The flat panel manufacturing apparatus includes: a plurality of process chambers 110 in which at least two substrates 10 are processed; a transfer chamber 120 that is provided among the plurality of the process chambers along a first direction L1 and is provided with a transfer robot 123 that supplies untreated substrates to the process chamber and takes out processed substrates from the process chamber while moving reciprocally and linearly along a second direction L2 crossing orthogonally to the first direction; a loading chamber 130 that is connected with one side of the transfer chamber and houses substrates to be supplied; and an unloading chamber 140 that is connected with the other side of the transfer chamber and houses discharged substrates. Within the process chamber, a process gas is deposited to either one of substrates along the second direction, and remaining substrates are subjected to transfer and positional arrangement.
摘要翻译：要解决的问题：提供一种能够将有机薄膜沉积到基板上的整个处理时间最小化的平板制造装置。解决方案：平板制造装置包括：多个处理室110，其中处理至少两个基板10; 传送室120，沿着第一方向L1设置在多个处理室之间，并且设置有传送机器人123，其将未处理的基板供应到处理室，并且从处理室中取出处理的基板，同时沿着与第一方向垂直的第二方向L2; 装载室130，其与传送室的一侧连接并容纳待供应的基板; 以及与输送室的另一侧连接并容纳排出的基板的卸载室140。在处理室内，沿着第二方向将工艺气体沉积到基板中的任一个，并且剩余的基板经受传送和位置布置。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2013133545A Mask loading and substrate conveying chamber, and method for operating the same 有权
标题翻译：掩模装载和底板输送室及其操作方法
公开(公告)号：JP2013133545A
公开(公告)日：2013-07-08
申请号：JP2012243029
申请日：2012-11-02
申请人： Snu Precision Co Ltd , エスエヌユー精密股▲ふん▼有限公司
发明人： YOON SUNG HOON , CHO WHANG SIN , SONG KI CHUL , LEE JAE JIN
IPC分类号： C23C14/56 , C23C14/24 , G03F1/68 , H01L21/677
摘要： PROBLEM TO BE SOLVED: To provide a mask loading and substrate conveying chamber capable of enhancing the degree of space application of a process unit.SOLUTION: The mask loading and substrate conveying chamber 100 includes a first space part 110, a second space part 120, a mask loading unit 130, and a transfer unit. The first space part 110 has a door 111 for the access of a substrate or a mask M, and a second space part 120 is formed so as to be communicated with the first space part 110. The mask loading unit 130 loads a plurality of masks M, and the transfer unit transfers in the reciprocating manner the mask loading unit 130 so that the mask loading unit 130 may be selectively located in the first space part 110 or the second space part 120. The masks M are accessed through the door 111 when the mask loading unit 130 is located in the first space part, and the substrates are accessed through the door 111 when the mask loading unit 130 is located in the second space part 120.
摘要翻译：要解决的问题：提供能够提高处理单元的空间应用程度的掩模装载和基板输送室。解决方案：掩模装载和基板输送室100包括第一空间部分110，第二空间部分120，掩模加载单元130和传送单元。第一空间部分110具有用于访问基板或掩模M的门111，并且形成第二空间部分120以与第一空间部分110连通。掩模加载单元130装载多个掩模 M，并且传送单元以往复方式传送掩模加载单元130，使得掩模加载单元130可以选择性地位于第一空间部分110或第二空间部分120中。通过门111访问掩模M，当门掩模装载单元130位于第一空间部分中，并且当掩模装载单元130位于第二空间部分120中时，基板通过门111进入。

9. 发明专利

JP2012219377A Large-capacity vapor deposition apparatus for forming thin film 审中-公开
标题翻译：用于形成薄膜的大容量蒸气沉积装置
公开(公告)号：JP2012219377A
公开(公告)日：2012-11-12
申请号：JP2012090746
申请日：2012-04-12
申请人： Snu Precision Co Ltd , エスエヌユー精密股▲ふん▼有限公司
发明人： CHO WHANG SIN , SONG KI CHUL , JUNG SEUNG CHUL , AHN WOO JUNG
IPC分类号： C23C14/24
摘要： PROBLEM TO BE SOLVED: To provide a large-capacity vapor deposition apparatus for forming a thin film, with which the operation stop cycle of an apparatus for vapor deposition of a thin film is prolonged and the use efficiency of the apparatus is enhanced.SOLUTION: In the large-capacity vapor deposition apparatus, a plurality of raw material containers 110 and a sensor 150 are provided, and the amounts of raw material substances 1 to be accommodated in the raw material containers 110 are distributed. Thereby, the heat amount required to heat the raw material substances 1 is reduced in comparison with the case where a single large-capacity raw material container is used. A state, in which the raw material substance 1 is always vaporized, is maintained in the periphery of a jetting port 130 by raising the temperature in the periphery of the jetting port 130 by a second heater 190.
摘要翻译：解决的问题：为了提供用于形成薄膜的大容量气相沉积设备，延长了薄膜气相沉积设备的操作停止循环并提高了设备的使用效率。解决方案：在大容量气相沉积装置中，设置有多个原料容器110和传感器150，并且分配容纳在原料容器110中的原料物质1的量。因此，与使用单个大容量原料容器的情况相比，加热原料物质1所需的热量减少。原料1始终蒸发的状态通过第二加热器190升高喷射口130周边的温度而被保持在喷射口130的周围。（C） 2013年，JPO＆INPIT

10. 发明专利

JP2012219376A Vapor deposition apparatus for forming thin film 审中-公开
标题翻译：用于形成薄膜的蒸气沉积装置
公开(公告)号：JP2012219376A
公开(公告)日：2012-11-12
申请号：JP2012090742
申请日：2012-04-12
申请人： Snu Precision Co Ltd , エスエヌユー精密股▲ふん▼有限公司
发明人： CHO WHANG SIN , SONG KI CHUL , JUNG SEUNG CHUL , AHN WOO JUNG
IPC分类号： C23C14/24 , H01L51/50 , H05B33/10
CPC分类号： C23C14/24 , C23C14/12 , C23C14/26 , C23C14/544 , C23C14/564
摘要： PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus for forming a thin film, which allows uniform vapor deposition and vapor deposition onto a large area by the stable vaporization of a raw-material substance, prevents an interruption state of production, and permits continuous production for a long time.SOLUTION: The vapor deposition apparatus includes: a raw material container in which a raw-material substance being vapor-deposited on a substrate is accommodated in a solid or liquid state; a vaporization chamber which is connected to an upper part of the raw material container so as to be communicated with the raw material container and through which the raw-material substance vaporized from the raw material container passes; a jetting port which is formed at an upper part of the vaporization chamber and jets the vaporized raw-material substance, which has passed through the vaporization chamber, to the upper side; a first heater which is provided at an upper part of the raw-material substance in the vaporization chamber or in the raw material container and supplies heat to the raw-material substance accommodated in the raw material container to vaporize the raw-material substance; and a shielding plate which is arranged at an upper part of the first heater in the vaporization chamber, and shields sticking of scattered raw-material substance accommodated in the raw material container or scattered impurities to the jetting port while heat is supplied to the raw-material substance from the first heater.
摘要翻译：要解决的问题：为了提供一种用于形成薄膜的气相沉积装置，其通过原料物质的稳定蒸发使得在大面积上的均匀气相沉积和气相沉积可以防止生产的中断状态，并允许长时间连续生产。气相沉积设备包括：原料容器，其中气相沉积在基底上的原料物质以固体或液体状态容纳; 蒸发室，与原料容器的上部连接，与原料容器连通，从原料容器蒸发的原料物质通过该蒸发室; 形成在蒸发室的上部的喷射口将已经通过蒸发室的蒸发的原料物质喷射到上侧; 第一加热器，其设置在所述蒸发室或所述原料容器中的所述原料物质的上部，并且向容纳在所述原料容器内的所述原料物质供给热量，使所述原料物质蒸发; 以及屏蔽板，其布置在所述蒸发室中的所述第一加热器的上部，并且在向所述原料容器供给热量的同时，将容纳在所述原料容器中的散射的原料物质或散射的杂质粘附到所述喷射口，来自第一加热器的物质。版权所有（C）2013，JPO＆INPIT

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