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1. 发明申请

WO2004066380A1 A LAYER TRANSFER METHOD 审中-公开
标题翻译：层转移方法
公开(公告)号：WO2004066380A1
公开(公告)日：2004-08-05
申请号：PCT/EP2004/000646
申请日：2004-01-22
申请人： S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES , COMMISSARIAT A L'ENERGIE ATOMIQUE , BRESSOT, Séverine , RAYSSAC, Olivier , ASPAR, Bernard
发明人： BRESSOT, Séverine , RAYSSAC, Olivier , ASPAR, Bernard
IPC分类号： H01L21/762
CPC分类号： H01L21/76259 , C09J5/00 , H01L21/76254
摘要： The invention relates to a method of removing a peripheral zone (62) of adhesive while using a layer of adhesive (6) in the process of assembling and transferring a layer (41) of material coming from a source substrate (4) and placed on a support substrate (5). The method is remarkable in that it consists in bonding the two substrates (4 and 5) together by means of an intermediate layer of curable adhesive (6), in curing only that zone (61) of the layer of adhesive (6) which extends facing the front face (43) of said layer (41) of material to be transferred, in removing the zone (62) of non-cured adhesive, and in detaching said layer (41) to be transferred from the remainder (42) of the source substrate. The invention is applicable to fabricating a composite substrate in the fields of electronics, optoelectronics, or optics.
摘要翻译：本发明涉及一种在组装和转移来自源底板（4）的材料层（41）的过程中使用一层粘合剂（6）的同时去除粘合剂的周边区域（62）的方法，并将其放置在支撑基板（5）。该方法是显着的，它包括通过可固化粘合剂（6）的中间层将两个基底（4和5）粘合在一起，仅固化延伸的粘合剂层（6）的区域（61）面对所述待转移材料的所述层（41）的前表面（43），以去除未固化粘合剂的区域（62），并且从所述层（41）的剩余部分（42）分离所述待转移的层（41）源底物。本发明可应用于在电子，光电子学或光学领域制造复合衬底。

2. 发明申请

WO2004008526A1 A LAYER TRANSFER METHOD 审中-公开
标题翻译：层转移方法
公开(公告)号：WO2004008526A1
公开(公告)日：2004-01-22
申请号：PCT/EP2003/007853
申请日：2003-07-16
申请人： S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES , COMMISSARIAT A L'ENERGIE ATOMIQUE , ASPAR, Bernard , BRESSOT, Séverine , RAYSSAC, Olivier
发明人： ASPAR, Bernard , BRESSOT, Séverine , RAYSSAC, Olivier
IPC分类号： H01L21/762
CPC分类号： H01L21/76259 , H01L21/76254
摘要： The invention concerns a method for transferring a layer of material (41) deriving from a source substrate (4) onto a support substrate (5), comprising at least the steps consisting in : depositing additional material (6) on at least one of the front faces of the source substrate (4) and the support substrate (5) and applying said two substrates (4, 5) against each other; then detaching said layer to be transferred (41) from the source substrate (4) along a zone of weakness (43) by applying a stress of mechanical origin. This method is remarkable in that prior to the step of depositing the material (6), at least one recess (56) for receiving excess additional material (6) is formed in at least one of the two substrates (4, 5), said recess opening onto the front face of said substrate. Application to the fabrication of a composite substrate in the fields of electronics, optoelectronics and optics.
摘要翻译：本发明涉及一种将从源底物（4）衍生的材料层（41）转移到支撑衬底（5）上的方法，该方法至少包括以下步骤：将附加材料（6）沉积在至少一个所述源极基板（4）和所述支撑基板（5）的前表面彼此相对地施加所述两个基板（4,5）; 然后通过施加机械来源的应力，将所述待迁移层（41）从所述源基板（4）沿弱区（43）分离。该方法是显着的，因为在沉积材料（6）的步骤之前，用于接收多余的附加材料（6）的至少一个凹部（56）形成在两个基板（4,5）中的至少一个中，所述在所述衬底的前表面上的凹口。应用于电子，光电子学和光学领域的复合衬底的制造。

3. 发明授权

EP1586115B1 A LAYER TRANSFER METHOD 有权
标题翻译：层转移程序
公开(公告)号：EP1586115B1
公开(公告)日：2008-05-28
申请号：EP04704241.1
申请日：2004-01-22
申请人： S.O.I.Tec Silicon on Insulator Technologies , COMMISSARIAT A L'ENERGIE ATOMIQUE
发明人： BRESSOT, Séverine , RAYSSAC, Olivier , ASPAR, Bernard
IPC分类号： H01L21/762 , C09J5/00
CPC分类号： H01L21/76259 , C09J5/00 , H01L21/76254
摘要： The invention relates to a method of removing a peripheral zone (62) of adhesive while using a layer of adhesive (6) in the process of assembling and transferring a layer (41) of material coming from a source substrate (4) and placed on a support substrate (5). The method is remarkable in that it consists in bonding the two substrates (4 and 5) together by means of an intermediate layer of curable adhesive (6), in curing only that zone (61) of the layer of adhesive (6) which extends facing the front face (43) of said layer (41) of material to be transferred, in removing the zone (62) of non-cured adhesive, and in detaching said layer (41) to be transferred from the remainder (42) of the source substrate. The invention is applicable to fabricating a composite substrate in the fields of electronics, optoelectronics, or optics.

4. 发明公开

EP1586115A1 A LAYER TRANSFER METHOD 有权
标题翻译：层转移程序
公开(公告)号：EP1586115A1
公开(公告)日：2005-10-19
申请号：EP04704241.1
申请日：2004-01-22
申请人： S.O.I.Tec Silicon on Insulator Technologies , COMMISSARIAT A L'ENERGIE ATOMIQUE
发明人： BRESSOT, Séverine , RAYSSAC, Olivier , ASPAR, Bernard
IPC分类号： H01L21/762 , C09J5/00
CPC分类号： H01L21/76259 , C09J5/00 , H01L21/76254
摘要： The invention relates to a method of removing a peripheral zone (62) of adhesive while using a layer of adhesive (6) in the process of assembling and transferring a layer (41) of material coming from a source substrate (4) and placed on a support substrate (5). The method is remarkable in that it consists in bonding the two substrates (4 and 5) together by means of an intermediate layer of curable adhesive (6), in curing only that zone (61) of the layer of adhesive (6) which extends facing the front face (43) of said layer (41) of material to be transferred, in removing the zone (62) of non-cured adhesive, and in detaching said layer (41) to be transferred from the remainder (42) of the source substrate. The invention is applicable to fabricating a composite substrate in the fields of electronics, optoelectronics, or optics.

5. 发明公开

EP1543553A1 A LAYER TRANSFER METHOD 有权
标题翻译： LAYERS过户手续
公开(公告)号：EP1543553A1
公开(公告)日：2005-06-22
申请号：EP03763890.5
申请日：2003-07-16
申请人： S.O.I.Tec Silicon on Insulator Technologies , Commissariat A L'Energie Atomique
发明人： ASPAR, Bernard , BRESSOT, Séverine , RAYSSAC, Olivier
IPC分类号： H01L21/762 , H01L21/20 , H01L21/18 , H01L21/304
CPC分类号： H01L21/76259 , H01L21/76254
摘要： The invention concerns a method for transferring a layer of material (41) deriving from a source substrate (4) onto a support substrate (5), comprising at least the steps consisting in : depositing additional material (6) on at least one of the front faces of the source substrate (4) and the support substrate (5) and applying said two substrates (4, 5) against each other; then detaching said layer to be transferred (41) from the source substrate (4) along a zone of weakness (43) by applying a stress of mechanical origin. This method is remarkable in that prior to the step of depositing the material (6), at least one recess (56) for receiving excess additional material (6) is formed in at least one of the two substrates (4, 5), said recess opening onto the front face of said substrate. Application to the fabrication of a composite substrate in the fields of electronics, optoelectronics and optics.

6. 发明申请

WO2006032298A1 PLANARIZATION OF EPITAXIAL HETEROSTRUCTURES INCLUDING THERMAL TREATMENT 审中-公开
标题翻译：包含热处理的外源性结构的平面化
公开(公告)号：WO2006032298A1
公开(公告)日：2006-03-30
申请号：PCT/EP2004/011439
申请日：2004-09-22
申请人： S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES , MARTINEZ, Muriel , DAVAL, Nicolas , RAYSSAC, Olivier , BLONDEAU, Beryl
发明人： MARTINEZ, Muriel , DAVAL, Nicolas , RAYSSAC, Olivier , BLONDEAU, Beryl
IPC分类号： H01L21/20
CPC分类号： B24B37/14 , B24B37/042 , H01L21/0245 , H01L21/0251 , H01L21/02664 , H01L21/2007 , H01L21/3212 , H01L21/324
摘要： A method of planarization of an epitaxial heterostructure comprising at least a strain-relaxed buffer layer epitaxially grown on a substrate of a different material, said method comprising: - a step of thermal annealing the epitaxial heterostructure at a temperature of at least 900 °C for a period of at least 2 hours, and - a step of chemical-mechanical polishing the surface of the strain-relaxed buffer layer. This method provides a specific thermal treatment which allows, by improving the relaxation of the strain-relaxed buffer layer, to obtain a better quality of the surface planarization and to insure a stable material for further processing.
摘要翻译：一种外延异质结构的平面化方法，包括至少在不同材料的衬底上生长的应变松弛缓冲层，所述方法包括： - 在至少900℃的温度下对外延异质结构进行热退火的步骤，至少2小时的时间，以及 - 对应变松弛缓冲层的表面进行化学机械抛光的步骤。该方法提供了特定的热处理，其允许通过改善应变松弛缓冲层的松弛以获得更好的表面平坦化质量并且确保用于进一步加工的稳定材料。

7. 发明申请

WO2003063214A2 PROCESS FOR PREPARATION OF SEPARABLE SEMICONDUCTOR ASSEMBLIES, PARTICULARLY TO FORM SUBSTRATES FOR ELECTRONICS, OPTOELECTRONICS AND OPTICS 审中-公开
标题翻译：制备可分离的半导体组件的方法，特别是形成电子，光电和光学的基板
公开(公告)号：WO2003063214A2
公开(公告)日：2003-07-31
申请号：PCT/IB2003/000424
申请日：2003-01-21
申请人： S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES , LETERTRE, Fabrice , GHYSELEN, Bruno , RAYSSAC, Olivier
发明人： LETERTRE, Fabrice , GHYSELEN, Bruno , RAYSSAC, Olivier
IPC分类号： H01L21/20
CPC分类号： H01L21/76254 , H01L21/0445 , H01L21/187 , H01L21/7602 , H01L33/0012 , H01L33/0029
摘要： The invention propoeses processes for the preparation of an assembly (10, 12, 22, 30) based on semiconductors comprising a first layer such as a thin layer (22). A process comprises the followingsteps: form an interface layer (26) on only one (22) of the two layers, bring the layer on which the interface layer is formed and the other exposed layer into contact with each other, the interface layer (26) being chosen as a function of the material in the exposed layer to form a bonding interface that can be separated under the action of stresses applied after exposure to temperatures within a predetermined range. Application to the manufacture of substrates that can be separated from the support in the fields of electronics, optoelectronics or optics.
摘要翻译：本发明提出了基于包括第一层例如薄层（22）的半导体制备组件（10,12,22,30）的方法。一种方法包括以下步骤：仅在两层中的一个（22）上形成界面层（26），使其上形成有界面层的层与另一暴露层相互接触，界面层（26 ）被选择为暴露层中的材料的函数，以形成可在暴露于预定范围内的温度之后施加的应力作用下分离的结合界面。适用于可在电子，光电子学或光学领域与支持体分离的衬底的制造。

8. 发明申请

WO2006032946A1 TRANSFER METHOD WITH A TREATMENT OF A SURFACE TO BE BONDED 审中-公开
标题翻译：用于处理要粘合的表面的转移方法
公开(公告)号：WO2006032946A1
公开(公告)日：2006-03-30
申请号：PCT/IB2004/003275
申请日：2004-09-21
申请人： S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES , KERDILES, Sébastien , MALEVILLE, Christophe , LETERTRE, Fabrice , RAYSSAC, Olivier
发明人： KERDILES, Sébastien , MALEVILLE, Christophe , LETERTRE, Fabrice , RAYSSAC, Olivier
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： The invention concerns a method for transferring from a top donor wafer (10) a layer of material onto a receiving handle wafer (20), the top and receiving wafers comprising respective surfaces to be bonded, the method comprising: • a treatment step for treating at least a surface to be bonded, the treatment of a given surface of a wafer generating on the opposed surface of said wafer a contamination, • a bonding step for direct bonding the surfaces to be bonded of the top and handle wafers, in order to form an intermediate multilayer wafer (30), • a removal step for removing excess material from the top wafer, the method being characterized in that during the treatment step only the surface to be bonded of the top wafer is treated.
摘要翻译：本发明涉及一种用于从顶部施主晶片（10）将一层材料转移到接收手柄晶片（20）上的方法，所述顶部和接收晶片包括要接合的相应表面，所述方法包括：处理步骤，用于在至少要粘合的表面，在所述晶片的相对表面上产生污染的晶片的给定表面的处理，用于直接结合顶部和处理晶片的待结合表面的结合步骤，以形成中间多层晶片（30），用于从顶部晶片去除多余材料的去除步骤，其特征在于在处理步骤期间仅处理顶部晶片的待结合表面。

9. 发明申请

WO2005106948A1 PROCEDE DE FABRICATION DE PUCES ET SUPPORT ASSOCIE 审中-公开
标题翻译：制作胶片和相关支持的方法
公开(公告)号：WO2005106948A1
公开(公告)日：2005-11-10
申请号：PCT/FR2005/001021
申请日：2005-04-25
申请人： S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES , GHYSELEN, Bruno , RAYSSAC, Olivier
发明人： GHYSELEN, Bruno , RAYSSAC, Olivier
IPC分类号： H01L21/78
CPC分类号： H01L21/78 , H01L2924/0002 , H01L2924/00
摘要： L'invention concerne un procédé de fabrication d'une pluralité de puces, chaque puce comportant au moins un circuit, le procédé comportant la succession des étapes suivantes : Création des puces sur une couche de matériau semiconducteur, ladite couche étant solidaire d'un substrat, transfert de ladite couche comportant les puces du substrat sur un support, constitution de puces individuelles par le découpage de ladite couche selon un motif de découpage prédéterminé, caractérisé en ce que le procédé comporte également, avant le transfert de la couche sur le support, la constitution sur le support d'un motif de fragilisation correspondant au motif de découpage. L'invention concerne également un procédé de fabrication d'un support associé, et un tel support.
摘要翻译：本发明涉及一种用于制造多个芯片的方法，每个芯片包括至少一个电路，该方法包括以下连续步骤：在半导体材料层上产生芯片，所述层与衬底成一体; 将包含所述衬底的所述芯片的所述层转移到支撑体上; 通过根据预定的切割图案切割所述层来形成单独的芯片。本发明的特征在于，所述方法还包括在将层转移到支撑件之前，在支撑件上形成对应于切割图案的弱化图案。本发明还涉及一种用于制造相关联的支撑件和所述支撑件的方法。

10. 发明申请

WO2005031852A1 INDIRECT BONDING WITH DISAPPEARANCE OF THE BONDING LAYER 审中-公开
标题翻译：与粘结层隔离的间接粘结
公开(公告)号：WO2005031852A1
公开(公告)日：2005-04-07
申请号：PCT/IB2004/003324
申请日：2004-09-30
申请人： S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES , DAVAL, Nicolas , GHYSELEN, Bruno , AULNETTE, Cécile , RAYSSAC, Olivier , CAYREFOURCQ, Ian
发明人： DAVAL, Nicolas , GHYSELEN, Bruno , AULNETTE, Cécile , RAYSSAC, Olivier , CAYREFOURCQ, Ian
IPC分类号： H01L21/762
CPC分类号： H01L21/76251 , H01L21/2007 , H01L21/76254 , Y10S438/933
摘要： The invention provides a method of producing a structure comprising a thin layer (2") of semiconductive material on a support substrate (20), said thin layer (2") being obtained from a donor substrate (10) comprising an upper layer (2) of semiconductor material, the method being characterized in that it comprises: - forming on said upper layer (2) a bonding layer (3) of a material that accepts diffusion of an element of the material of the upper layer (2); - cleaning said bonding layer (3) for mastering its bonding adhesion; - bonding the donor substrate (10), from the side of the bonding layer (3) previously formed on the upper layer (2) and cleaned, to the support substrate (20); and - diffusing said element from the upper layer into the bonding layer to homogenize the concentration of said element in the bonding layer and said upper layer, to constitute said thin layer (2") of the structure with said bonding layer and said upper layer.
摘要翻译：本发明提供一种制造包括半导体材料薄层（2“）的结构在支撑衬底（20）上的方法，所述薄层（2”）由施主衬底（10）获得，所述施主衬底（10）包括上层），其特征在于包括：在所述上层（2）上形成接受上层（2）的材料的元素的扩散的材料的接合层（3）; - 清洁所述粘合层（3），用于掌握其粘合粘合; 从所述上层（2）上预先形成的所述接合层（3）的一侧将所述施主基板（10）接合并清洁到所述支撑基板（20）; 以及 - 将所述元件从所述上层扩散到所述接合层中，以使所述结合层和所述上层中的所述元素的浓度均匀化，以用所述接合层和所述上层构成所述结构的所述薄层（2“）。

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