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    • 1. 发明申请
    • A LAYER TRANSFER METHOD
    • 层转移方法
    • WO2004008526A1
    • 2004-01-22
    • PCT/EP2003/007853
    • 2003-07-16
    • S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIESCOMMISSARIAT A L'ENERGIE ATOMIQUEASPAR, BernardBRESSOT, SéverineRAYSSAC, Olivier
    • ASPAR, BernardBRESSOT, SéverineRAYSSAC, Olivier
    • H01L21/762
    • H01L21/76259H01L21/76254
    • The invention concerns a method for transferring a layer of material (41) deriving from a source substrate (4) onto a support substrate (5), comprising at least the steps consisting in : depositing additional material (6) on at least one of the front faces of the source substrate (4) and the support substrate (5) and applying said two substrates (4, 5) against each other; then detaching said layer to be transferred (41) from the source substrate (4) along a zone of weakness (43) by applying a stress of mechanical origin. This method is remarkable in that prior to the step of depositing the material (6), at least one recess (56) for receiving excess additional material (6) is formed in at least one of the two substrates (4, 5), said recess opening onto the front face of said substrate. Application to the fabrication of a composite substrate in the fields of electronics, optoelectronics and optics.
    • 本发明涉及一种将从源底物(4)衍生的材料层(41)转移到支撑衬底(5)上的方法,该方法至少包括以下步骤:将附加材料(6)沉积在至少一个 所述源极基板(4)和所述支撑基板(5)的前表面彼此相对地施加所述两个基板(4,5); 然后通过施加机械来源的应力,将所述待迁移层(41)从所述源基板(4)沿弱区(43)分离。 该方法是显着的,因为在沉积材料(6)的步骤之前,用于接收多余的附加材料(6)的至少一个凹部(56)形成在两个基板(4,5)中的至少一个中,所述 在所述衬底的前表面上的凹口。 应用于电子,光电子学和光学领域的复合衬底的制造。