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1. 发明授权

US6139706A Sputter cathode 有权
标题翻译：溅射阴极
公开(公告)号：US6139706A
公开(公告)日：2000-10-31
申请号：US207413
申请日：1998-12-08
申请人： Rolf Adam , Jorg Krempel-Hesse , Martin Bahr
发明人： Rolf Adam , Jorg Krempel-Hesse , Martin Bahr
IPC分类号： C23C14/34 , C23C14/35 , H01J37/34
CPC分类号： H01J37/3408
摘要： In a sputter cathode with a plate-shaped target (8) and with a trough-shaped yoke (3), arranged behind the target (8), with middle web (5) and with magnets (7, 7', . . . ) for producing a closed tunnel of field lines (15, 15', . . . ) curved in an arc in front of the target surface as well as with three sheet-metal blanks (9, 10, 11) consisting of one layer of a compound plate e.g. of an aluminum/iron compound plate, which blanks are placed into the plane between the target (8) and the front surfaces (12, 13) of the trough edge of the yoke (3), which front surfaces face the target (8), all sheet-metal blanks (9, 10, 11) of magnetically conductive material together form gaps (a, a') extending approximately parallel to the front surfaces (12, 13), which gaps (a, a') are filled out between the sheet-metal blanks (9, 10, 11) by the other layer (21) of the compound plate.
摘要翻译：在具有板状靶（8）和槽状轭（3）的溅射阴极中，布置在靶（8）的后面，具有中间腹板（5）和磁体（7,7'，...）。），用于产生在靶表面前方弧形弯曲的场线（15,15'，...）的封闭隧道，以及由三层金属板坯（9,10,11）构成的三层金属板坯复合板例如的铝/铁复合板，其中坯料被放置在靶（8）和轭（3）的槽边缘的前表面（12,13）之间的平面中，该前表面面向靶（8）导电材料的所有金属板坯（9,10,11）一起形成大致平行于前表面（12,13）延伸的间隙（a，a'），该间隙（a，a'）被填充在复合板的另一层（21）之间的金属片坯料（9,10,11）之间。

2. 发明授权

US06077407A Sputtering cathode based on the magnetron principle 有权
标题翻译：基于磁控管原理的溅射阴极
公开(公告)号：US06077407A
公开(公告)日：2000-06-20
申请号：US301459
申请日：1999-04-29
申请人： Michael Liehr , Jorg Krempel-Hesse , Rolf Adam
发明人： Michael Liehr , Jorg Krempel-Hesse , Rolf Adam
IPC分类号： C23C14/35 , H01J37/34
CPC分类号： C04B30/02 , H01J37/3408 , C04B2111/54
摘要： A sputtering cathode based on the magnetron principle, with a target of the material to be sputtered having a minimum of one component, with a magnetic system located beneath the target and having magnetic sources of different polarization which form a minimum of one self-enclosed tunnel of arcuate magnetic lines of force, having the poles of the sources facing away from the target connected to each other via a magnetic yoke made of a material of low retentivity, the bodies forming the sources of the magnetic fields being right prisms, and preferably right parallelepipeds, the base edges of which run parallel to the target plane, with the magnetic lines of force of the sources running at inclined angles relative to the base surfaces of the bodies.
摘要翻译：基于磁控管原理的溅射阴极，具有至少一个组分的溅射材料的靶材具有位于靶材下方的磁系统，并具有不同极化的磁源，其形成至少一个自封闭隧道通过由低保持性材料制成的磁轭将源极的极背向与目标物相连的弧形磁力线，形成磁场源的体是正确的棱镜，最好是右平行六面体，其基部边缘平行于目标平面延伸，源极的磁力线相对于主体的基面以倾斜的角度运行。

3. 发明授权

US06183612B2 Sputtering cathode 有权
标题翻译：溅射阴极
公开(公告)号：US06183612B2
公开(公告)日：2001-02-06
申请号：US09179398
申请日：1998-10-27
申请人： Rolf Adam , Jörg Krempel-Hesse , Martin Bähr
发明人： Rolf Adam , Jörg Krempel-Hesse , Martin Bähr
IPC分类号： C23C1434
CPC分类号： C23C14/35 , H01J37/3408
摘要： A sputtering cathode with a flat plate-shaped target (8) and a tub-shaped yoke (3) arranged behind the target (8), with center ridge (5) and with magnets (7,7′) for generating an enclosed tunnel of arc-shaped curved field lines (15,15′) in front of the target surface, as well as with three sheet metal cutouts (9,10,11) or groups of partial cutouts inserted into the plane between the target (8) and the end faces (12) of the tub rim of the yoke (3) facing the target (8), all the sheet metal cutouts (9,10,11) together form two gaps (a,b) extending roughly parallel to the end faces (12,13), wherein the magnets (7,7′) are each incorporated or inserted into the yoke bottom and the side surfaces of the magnets (7,7′) facing towards and away from the target (8) run flush with the yoke bottom.
摘要翻译：具有平板状目标（8）的溅射阴极和布置在目标（8）后面的具有中心脊（5）和用于产生封闭隧道的磁体（7,7'）的桶形磁轭（3）在目标表面前面的弧形弯曲场线（15,15'），以及插入到目标（8）之间的平面中的三个金属板切口（9,10,11）或部分切口组，和轭（3）的桶边缘的面（12）相对于靶（8），所有的金属板切口（9,10,11）一起形成两个间隙（a，b）端面（12,13），其中磁体（7,7'）各自被结合或插入到磁轭底部中，并且磁体（7,7'）的朝向和远离目标（8）的侧表面运行与轭底齐平。

4. 发明授权

US4885070A Method and apparatus for the application of materials 失效
标题翻译：材料应用的方法和装置
公开(公告)号：US4885070A
公开(公告)日：1989-12-05
申请号：US197040
申请日：1988-05-20
申请人： Gregor A. Campbell , Robert W. Conn , Dan M. Goebel , Rolf Adam , Hans Aichert , Hans Betz , Anton Dietrich , Gonde Dittmer , Klaus Hartig , Friedrich Hass , Rainer Ludwig , Max Mayr , Alfred Thelen
发明人： Gregor A. Campbell , Robert W. Conn , Dan M. Goebel , Rolf Adam , Hans Aichert , Hans Betz , Anton Dietrich , Gonde Dittmer , Klaus Hartig , Friedrich Hass , Rainer Ludwig , Max Mayr , Alfred Thelen
IPC分类号： C23C14/00 , C23C14/46 , H01J37/34
CPC分类号： C23C14/46 , C23C14/0036 , H01J37/3402
摘要： An apparatus to apply materials to a substrate disposed in a vacuum chamber is disclosed. A separate generator chamber containing an electron emitter is connected to the vacuum chamber by a process chamber so that a plasma of controllable cross-sectional shape and large area is formed and guided by magnets toward a target system. Positive ions may be accelerated against the target by applying an adjustable negative voltage.
摘要翻译：公开了一种将材料施加到设置在真空室中的基板的装置。包含电子发射器的单独的发生器室通过处理室连接到真空室，使得具有可控横截面形状和大面积的等离子体由磁体形成并被引导到目标系统。通过施加可调节的负电压，正离子可以相对于目标加速。

5. 发明授权

US4428809A Method and apparatus for forming electrically conductive transparent oxide 失效
标题翻译：用于形成导电透明氧化物的方法和装置
公开(公告)号：US4428809A
公开(公告)日：1984-01-31
申请号：US362432
申请日：1982-03-26
申请人： Klaus J. Heimbach , Wolf-Dieter Munz , Rolf Adam , Heinz Wenzl
发明人： Klaus J. Heimbach , Wolf-Dieter Munz , Rolf Adam , Heinz Wenzl
IPC分类号： C23C14/00 , C23C14/35 , C23C15/00
CPC分类号： C23C14/35 , C23C14/0068
摘要： The invention concerns a method of and apparatus for forming electrically conductive transparent oxide coatings on water-containing substrates by magnetic-field reinforced cathodic atomization of a target hot-pressed from powdered oxide ceramic materials. The coatings formed have electrical conductivity.When the atomization process is carried out using direct-current voltages of between 150 and 600 volts and a power density of 3 to 15 and preferably 5 to 10 watts/cm.sup.2, the degree of pressing of the target is at least 75% of the density of the solid material and the atomization atmosphere is maintained at between 1.times.10.sup.-3 and 5.times.10.sup.-2 mbars with a composition of 2 to 20% oxygen, 40 to 70% hydrogen, and the remainder argon. Based upon the speed of travel of the web, a thickness of coating of between 10 and 100 mm and a specific resistance of between 100 and 10,000 .mu..OMEGA.cm are achieved.
摘要翻译：本发明涉及通过从粉末状氧化物陶瓷材料热压的靶的磁场增强阴极雾化在含水基底上形成导电透明氧化物涂层的方法和装置。所形成的涂层具有导电性。当使用150至600伏特的直流电压和3至15，优选5至10瓦特/平方厘米的功率密度进行雾化处理时，靶的压制度至少为密度的75％的固体材料和雾化气氛保持在1×10 -3和5×10 -2 m巴之间，组成为2至20％氧气，40至70％氢气，其余为氩气。基于网的行进速度，实现10至100mm之间的涂层厚度和100至10,000微米欧米伽厘米之间的电阻率。

6. 发明授权

US5108571A Process for coating a dielectric substrate with copper 失效
标题翻译：用铜包覆电介质基板的工艺
公开(公告)号：US5108571A
公开(公告)日：1992-04-28
申请号：US770772
申请日：1991-10-04
申请人： Rainer Ludwig , Rolf Adam , Anton Dietrich , Reiner Kukla
发明人： Rainer Ludwig , Rolf Adam , Anton Dietrich , Reiner Kukla
IPC分类号： C23C14/14 , C23C14/02 , C23C14/08 , C23C14/18 , C23C14/34 , C23C14/35 , H05K3/16 , H05K3/38
CPC分类号： H05K3/16 , C23C14/024 , C23C14/087 , C23C14/18 , C23C14/35 , H05K3/38
摘要： In a process for coating substrates 1, 35, for example aluminum ceramic plates 1 or polyimide films 35 with copper by means of a device including a direct current source 10 which is connected to a sputtering cathode 5, 30, 31 disposed in a process chamber 15, 15a, 32 which can be evacuated and this cathode electrically interacts with a copper target 3, 33, 34 which can be sputtered and the sputtered particles are deposited on the substrate 1, 35 whereby the argon gas can be introduced into the process chamber 15, 15a, 32 which can be evacuated, an oxygen inlet 20, 39 is provided in addition to the argon inlet 21, 40, whereby the supply of oxygen can be controlled via a valve 19, 43 inserted in the feed line 23, 39 and the amount of oxygen can be metered such that during a first process phase a copper oxide layer which functions as a bonding agent forms on the substrate 1, 35 and after adjusting the argon atmosphere in the process chamber 15, 15a, 32 pure copper is deposited as an electrically conductive layer.
摘要翻译：在通过包括连接到设置在处理室中的溅射阴极5,30,31的直流电源10的装置来涂覆基板1，35，例如铝陶瓷板1或具有铜的聚酰亚胺膜35的工艺中 15，15a，32，其可以被抽真空，并且该阴极与可以溅射的铜靶3,33,34电相互作用，并且溅射的颗粒沉积在衬底1,35上，由此氩气可以被引入到处理室除了氩入口21,40之外，还可以提供可以抽真空的氧气入口20,39，从而可以通过插入进料管线23,39中的阀19,43来控制供氧。并且可以计量氧气的量，使得在第一处理阶段期间，在基板1,35上形成用作粘合剂的氧化铜层，并且在调节处理室15,15a，32纯铜中的氩气氛之后，作为选民保存导电层。

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