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    • 2. 发明授权
    • Process for coating a dielectric substrate with copper
    • 用铜包覆电介质基板的工艺
    • US5108571A
    • 1992-04-28
    • US770772
    • 1991-10-04
    • Rainer LudwigRolf AdamAnton DietrichReiner Kukla
    • Rainer LudwigRolf AdamAnton DietrichReiner Kukla
    • C23C14/14C23C14/02C23C14/08C23C14/18C23C14/34C23C14/35H05K3/16H05K3/38
    • H05K3/16C23C14/024C23C14/087C23C14/18C23C14/35H05K3/38
    • In a process for coating substrates 1, 35, for example aluminum ceramic plates 1 or polyimide films 35 with copper by means of a device including a direct current source 10 which is connected to a sputtering cathode 5, 30, 31 disposed in a process chamber 15, 15a, 32 which can be evacuated and this cathode electrically interacts with a copper target 3, 33, 34 which can be sputtered and the sputtered particles are deposited on the substrate 1, 35 whereby the argon gas can be introduced into the process chamber 15, 15a, 32 which can be evacuated, an oxygen inlet 20, 39 is provided in addition to the argon inlet 21, 40, whereby the supply of oxygen can be controlled via a valve 19, 43 inserted in the feed line 23, 39 and the amount of oxygen can be metered such that during a first process phase a copper oxide layer which functions as a bonding agent forms on the substrate 1, 35 and after adjusting the argon atmosphere in the process chamber 15, 15a, 32 pure copper is deposited as an electrically conductive layer.
    • 在通过包括连接到设置在处理室中的溅射阴极5,30,31的直流电源10的装置来涂覆基板1,35,例如铝陶瓷板1或具有铜的聚酰亚胺膜35的工艺中 15,15a,32,其可以被抽真空,并且该阴极与可以溅射的铜靶3,33,34电相互作用,并且溅射的颗粒沉积在衬底1,35上,由此氩气可以被引入到处理室 除了氩入口21,40之外,还可以提供可以抽真空的氧气入口20,39,从而可以通过插入进料管线23,39中的阀19,43来控制供氧。 并且可以计量氧气的量,使得在第一处理阶段期间,在基板1,35上形成用作粘合剂的氧化铜层,并且在调节处理室15,15a,32纯铜中的氩气氛之后, 作为选民保存 导电层。
    • 7. 发明授权
    • Method and equipment for coating substrates by means of a plasma
discharge using a system of magnets to confine the plasma
    • 通过使用磁体系统的等离子体放电来涂覆基板以限制等离子体的方法和设备
    • US4863756A
    • 1989-09-05
    • US15128
    • 1987-02-02
    • Klaus HartigAnton Dietrich
    • Klaus HartigAnton Dietrich
    • C23C14/12B05D3/14B05D7/24C23C16/503C23C16/54H01J37/32
    • B05D1/62C23C16/503C23C16/545H01J37/32366H01J37/32623H01J37/3266H01J37/32761B05D3/14
    • Method for coating continuously moving substrates by the deposition of compounds from the gas phase by means of plasma discharge, produced by an electrode, with a chemical reaction, a system of magnets for the generation of a magnetic trap to constrict the plasma being disposed on one side of the substrate. The objective is to be accomplished by limiting the action of the plasma and the chemical reaction to the immediate vicinity of the system of magnets. For this purpose, the surface of the substrate to be coated is held at a distance "S.sub.1 " from the electrode, which is less than the dark-space distance that arises under the specified process conditions. Moreover, the magnetic trap is adjusted so that it passes through the substrate and is closed over the surface of the substrate to be coated and moreover in such a manner, that the constricted plasma is maintained on the surface of the substrate that is to be coated.
    • PCT No.PCT / EP86 / 00332 Sec。 371日期1987年2月2日 102(e)1987年2月2日PCT PCT。1986年6月4日PCT公布。 公开号WO86 / 07391 日期:1986年12月18日。通过借助等离子体放电由气相沉积化合物涂覆连续移动的基板的方法,由电极产生,具有化学反应,用于产生磁捕集器的磁体系统 压缩设置在基板的一侧上的等离子体。 目的是通过将等离子体和化学反应的作用限制在磁体系统附近来实现。 为此,待涂覆的基板的表面与电极保持距离“S1”,该距离小于在指定工艺条件下产生的暗空间距离。 此外,磁捕获器被调节使得其通过基底并且被封闭在待涂覆的基底的表面上,而且以这样的方式,缩小的等离子体保持在待涂覆的基底的表面上 。