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1. 发明授权

US4885070A Method and apparatus for the application of materials 失效
标题翻译：材料应用的方法和装置
公开(公告)号：US4885070A
公开(公告)日：1989-12-05
申请号：US197040
申请日：1988-05-20
申请人： Gregor A. Campbell , Robert W. Conn , Dan M. Goebel , Rolf Adam , Hans Aichert , Hans Betz , Anton Dietrich , Gonde Dittmer , Klaus Hartig , Friedrich Hass , Rainer Ludwig , Max Mayr , Alfred Thelen
发明人： Gregor A. Campbell , Robert W. Conn , Dan M. Goebel , Rolf Adam , Hans Aichert , Hans Betz , Anton Dietrich , Gonde Dittmer , Klaus Hartig , Friedrich Hass , Rainer Ludwig , Max Mayr , Alfred Thelen
IPC分类号： C23C14/00 , C23C14/46 , H01J37/34
CPC分类号： C23C14/46 , C23C14/0036 , H01J37/3402
摘要： An apparatus to apply materials to a substrate disposed in a vacuum chamber is disclosed. A separate generator chamber containing an electron emitter is connected to the vacuum chamber by a process chamber so that a plasma of controllable cross-sectional shape and large area is formed and guided by magnets toward a target system. Positive ions may be accelerated against the target by applying an adjustable negative voltage.
摘要翻译：公开了一种将材料施加到设置在真空室中的基板的装置。包含电子发射器的单独的发生器室通过处理室连接到真空室，使得具有可控横截面形状和大面积的等离子体由磁体形成并被引导到目标系统。通过施加可调节的负电压，正离子可以相对于目标加速。

2. 发明授权

US4856037A Arrangement for exposing semiconductor wafers by means of a synchrotron radiation in lithographic equipment 失效
标题翻译：用于通过平版印刷设备中的同步加速器辐射曝光半导体晶片的布置
公开(公告)号：US4856037A
公开(公告)日：1989-08-08
申请号：US73435
申请日：1987-07-15
申请人： Karl-Heinz Mueller , Hans Betz , Wilhelm Vach , Johann Krenner
发明人： Karl-Heinz Mueller , Hans Betz , Wilhelm Vach , Johann Krenner
IPC分类号： G03F9/00 , G03F7/20 , H01L21/027 , H01L21/68
CPC分类号： G03F7/70008 , G03F7/70358 , G03F7/70691 , G03F7/70808
摘要： An arrangement or apparatus for exposing semiconductor wafers by means of a synchrotron radiation, wherein a mask and semiconductor wafer are movable in a common, perpendicular direction relative to the direction of the X-ray beam in order to sweep an exposure field. The optical devices are provided for observing adjustment marks on the mask and semiconductor wafer to create control signals for the adjustment of the mask and wafer relative to each other. The beam radiation is conducted in a tube having a rectangular slot-shaped radiation window, which is arranged immediately adjacent to the mask and the optical devices are provided next to the beam feed tube and aligned to a part of the exposure fields lying outside of the impingement area of the beam leaving the radiation window.
摘要翻译：一种用于通过同步加速器辐射曝光半导体晶片的装置或装置，其中掩模和半导体晶片可相对于X射线束的方向在共同的垂直方向上移动，以便扫描曝光场。提供光学器件用于观察掩模和半导体晶片上的调整标记，以创建用于调整掩模和晶片相对于彼此的控制信号。光束辐射在具有矩形槽形辐射窗口的管中传导，其被布置成与掩模紧邻，并且光学装置设置在光束馈送管旁边，并且与位于外部的曝光区域的一部分对准离开辐射窗的光束的冲击区域。

3. 发明授权

US4838694A Process for imaging laserinterferometry and a laserinterferometer for carrying out said process 失效
标题翻译：用于成像激光干涉测量的方法和用于执行所述方法的激光干涉仪
公开(公告)号：US4838694A
公开(公告)日：1989-06-13
申请号：US113275
申请日：1987-09-09
申请人： Hans Betz , Herman Mader , Joachim Pelka
发明人： Hans Betz , Herman Mader , Joachim Pelka
IPC分类号： G01B11/06
CPC分类号： G01B11/0675
摘要： The present invention relates to a laserinterferometric process, in particular, for use in etching thin layers, whereby a layer to be examined is radiated with a laser passing over a surface of the layer and the intensity of the reflected laser beam, which is composed of a beam reflected from the surface of the layer to be examined and one reflected from its lower interface is ascertained and evaluated by a data processing system from which the information concerning the layer to be examined is read out. The present invention also relates to an imaging laserinterferometer comprising a modulator, which deflects the laser beam, a detector for the reflected laser beam and a data processing systen, which analyzes the detector signals.
摘要翻译： PCT No.PCT / DE87 / 00002 Sec。 371日期1987年9月9日第 102（e）1987年9月9日PCT PCT 1987年1月8日PCT公布。公开号WO87 / 04237 日期1987年7月16日。本发明涉及一种激光干涉测量方法，特别涉及用于蚀刻薄层的激光干涉测量方法，由此通过激光穿过该层的表面和被反射的强度照射被检查层由从被检查层的表面反射的光束和从其下部接口反射的光束构成的激光束由数据处理系统确定和评估，从该数据处理系统读出关于被检查层的信息。本发明还涉及一种成像激光干涉仪，其包括使激光束偏转的调制器，用于反射的激光束的检测器和分析检测器信号的数据处理系统。

4. 发明授权

US4493753A Method for producing separating nozzle elements for the separation of fluid mixtures 失效
标题翻译：用于分离流体混合物的分离喷嘴元件的制造方法
公开(公告)号：US4493753A
公开(公告)日：1985-01-15
申请号：US502721
申请日：1983-06-09
申请人： Erwin Becker , Wolfgang Ehrfeld , Dietrich Munchmeyer , Hans Betz , Anton Heuberger
发明人： Erwin Becker , Wolfgang Ehrfeld , Dietrich Munchmeyer , Hans Betz , Anton Heuberger
IPC分类号： B01D59/20 , B01D59/18 , B81B1/00 , B81C1/00 , C25D1/02 , C25D1/20
CPC分类号： B01D59/18 , Y10S205/918
摘要： A separating nozzle element composed of a separating body and two cover plates between which the body is interposed, the nozzle element being used for the separation of gaseous or vaporous mixtures, is produced by providing a layer of a material whose ability to be removed from the layer can be altered by irradiation, the thickness of the layer being approximately equal to the thickness of the separating body, irradiating the layer, starting at one surface, with radiation which has a penetration depth into the material of the layer which is less than the thickness of the layer, in a pattern corresponding to the cross section of the separating body structure, and removing from the layer material which is more easily removable as a result of the irradiation, to thereby permit the radiation to penetrate to greater distances from the one surface, while continuing the removal of material until the entire thickness of the layer has been subjected to radiation and removal, to form a mold of the separating body. The mold is then filled with material constituting the separating body, whereafter the mold is removed.
摘要翻译：分离喷嘴元件由分离体和两个盖板组成，主体之间插入有用于分离气态或蒸气混合物的喷嘴元件，其通过提供一层能从中除去的能力的材料层的厚度可以通过照射改变，层的厚度近似等于分离体的厚度，从一个表面开始照射层，其中具有穿入深度的层的材料的辐射小于以对应于分离体结构的横截面的图案的层的厚度，以及从层中去除由于照射而更容易移除的层材料，从而允许辐射穿透到距离一个的更远的距离表面，同时继续去除材料，直到层的整个厚度已经经受辐射和去除，以形成t的模具他分离身体。然后用构成分离体的材料填充模具，之后去除模具。

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