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    • 1. 发明授权
    • Process for coating a dielectric substrate with copper
    • 用铜包覆电介质基板的工艺
    • US5108571A
    • 1992-04-28
    • US770772
    • 1991-10-04
    • Rainer LudwigRolf AdamAnton DietrichReiner Kukla
    • Rainer LudwigRolf AdamAnton DietrichReiner Kukla
    • C23C14/14C23C14/02C23C14/08C23C14/18C23C14/34C23C14/35H05K3/16H05K3/38
    • H05K3/16C23C14/024C23C14/087C23C14/18C23C14/35H05K3/38
    • In a process for coating substrates 1, 35, for example aluminum ceramic plates 1 or polyimide films 35 with copper by means of a device including a direct current source 10 which is connected to a sputtering cathode 5, 30, 31 disposed in a process chamber 15, 15a, 32 which can be evacuated and this cathode electrically interacts with a copper target 3, 33, 34 which can be sputtered and the sputtered particles are deposited on the substrate 1, 35 whereby the argon gas can be introduced into the process chamber 15, 15a, 32 which can be evacuated, an oxygen inlet 20, 39 is provided in addition to the argon inlet 21, 40, whereby the supply of oxygen can be controlled via a valve 19, 43 inserted in the feed line 23, 39 and the amount of oxygen can be metered such that during a first process phase a copper oxide layer which functions as a bonding agent forms on the substrate 1, 35 and after adjusting the argon atmosphere in the process chamber 15, 15a, 32 pure copper is deposited as an electrically conductive layer.
    • 在通过包括连接到设置在处理室中的溅射阴极5,30,31的直流电源10的装置来涂覆基板1,35,例如铝陶瓷板1或具有铜的聚酰亚胺膜35的工艺中 15,15a,32,其可以被抽真空,并且该阴极与可以溅射的铜靶3,33,34电相互作用,并且溅射的颗粒沉积在衬底1,35上,由此氩气可以被引入到处理室 除了氩入口21,40之外,还可以提供可以抽真空的氧气入口20,39,从而可以通过插入进料管线23,39中的阀19,43来控制供氧。 并且可以计量氧气的量,使得在第一处理阶段期间,在基板1,35上形成用作粘合剂的氧化铜层,并且在调节处理室15,15a,32纯铜中的氩气氛之后, 作为选民保存 导电层。