专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050039682A1 Multiple frequency plasma etch reactor 有权
标题翻译：多频等离子体蚀刻反应器
公开(公告)号：US20050039682A1
公开(公告)日：2005-02-24
申请号：US10645665
申请日：2003-08-22
申请人： Raj Dhindsa , S.M. Sadjadi , Felix Kozakevich , Dave Trussell , Lumin Li , Eric Lenz , Camelia Rusu , Mukund Srinivasan , Aaron Eppler , Jim Tietz , Jeffrey Marks
发明人： Raj Dhindsa , S.M. Sadjadi , Felix Kozakevich , Dave Trussell , Lumin Li , Eric Lenz , Camelia Rusu , Mukund Srinivasan , Aaron Eppler , Jim Tietz , Jeffrey Marks
IPC分类号： H01J37/32 , C23C16/00 , H05H1/24
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32165
摘要： A workpiece is processed with a plasma in a vacuum plasma processing chamber by exciting the plasma at several frequencies such that the excitation of the plasma by the several frequencies simultaneously causes several different phenomena to occur in the plasma. The chamber includes central top and bottom electrodes and a peripheral top and/or bottom electrode arrangement that is either powered by RF or is connected to a reference potential by a filter arrangement that passes at least one of the plasma excitation frequencies to the exclusion of other frequencies.
摘要翻译：通过以几个频率激发等离子体，在真空等离子体处理室中用等离子体处理工件，使得等离子体被几个频率激发同时导致在等离子体中发生几种不同的现象。该腔室包括中央顶部和底部电极以及由RF供电的外围顶部和/或底部电极装置，或通过将至少一个等离子体激发频率传递至排除另一个等离子体激发频率的滤波器装置连接到参考电位频率

2. 发明授权

US07405521B2 Multiple frequency plasma processor method and apparatus 有权
标题翻译：多频等离子体处理器的方法和装置
公开(公告)号：US07405521B2
公开(公告)日：2008-07-29
申请号：US10645665
申请日：2003-08-22
申请人： Raj Dhindsa , S. M. Reza Sadjadi , Felix Kozakevich , Dave Trussell , Lumin Li , Eric Lenz , Camelia Rusu , Mukund Srinivasan , Aaron Eppler , Jim Tietz , Jeffrey Marks
发明人： Raj Dhindsa , S. M. Reza Sadjadi , Felix Kozakevich , Dave Trussell , Lumin Li , Eric Lenz , Camelia Rusu , Mukund Srinivasan , Aaron Eppler , Jim Tietz , Jeffrey Marks
IPC分类号： H01J7/24 , C23F1/00 , C23C16/00
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32165
摘要： A workpiece is processed with a plasma in a vacuum plasma processing chamber by exciting the plasma at several frequencies such that the excitation of the plasma by the several frequencies simultaneously causes several different phenomena to occur in the plasma. The chamber includes central top and bottom electrodes and a peripheral top and/or bottom electrode arrangement that is either powered by RF or is connected to a reference potential by a filter arrangement that passes at least one of the plasma excitation frequencies to the exclusion of other frequencies.
摘要翻译：通过以几个频率激发等离子体，在真空等离子体处理室中用等离子体处理工件，使得等离子体被几个频率激发同时导致在等离子体中发生几种不同的现象。该腔室包括中央顶部和底部电极以及由RF供电的外围顶部和/或底部电极装置，或通过将至少一个等离子体激发频率传递至排除另一个等离子体激发频率的滤波器装置连接到参考电位频率

3. 发明申请

US20060134917A1 Reduction of etch mask feature critical dimensions 审中-公开
标题翻译：蚀刻掩模的减少具有关键尺寸
公开(公告)号：US20060134917A1
公开(公告)日：2006-06-22
申请号：US11016455
申请日：2004-12-16
申请人： Zhisong Huang , S.M. Sadjadi , Jeffrey Marks
发明人： Zhisong Huang , S.M. Sadjadi , Jeffrey Marks
IPC分类号： H01L21/4757 , C23F1/00
CPC分类号： H01L21/67069 , H01L21/0337 , H01L21/0338 , H01L21/31144
摘要： A method for forming features in an etch layer in an etch stack with an etch mask over the etch layer, wherein the etch mask has etch mask features with sidewalls, where the etch mask features have a first critical dimension, is provided. A cyclical critical dimension reduction is performed to form deposition layer features with a second critical dimension, which is less than the first critical dimension. Each cycle, comprises a depositing phase for depositing a deposition layer over the exposed surfaces, including the vertical sidewalls, of the etch mask features and an etching phase for etching back the deposition layer leaving a selective deposition on the vertical sidewalls. Features are etched into the etch layer, wherein the etch layer features have a third critical dimension, which is less than the first critical dimension.
摘要翻译：一种用于在蚀刻层上的蚀刻层中形成蚀刻层中的特征的方法，其中蚀刻掩模具有带侧壁的蚀刻掩模特征，其中蚀刻掩模特征具有第一临界尺寸。执行周期性临界尺寸降低以形成具有小于第一临界尺寸的第二临界尺寸的沉积层特征。每个循环包括沉积相，用于在包括垂直侧壁的蚀刻掩模特征的暴露表面上沉积沉积层，以及用于蚀刻回沉积层的蚀刻阶段，在垂直侧壁上留下选择性沉积。将特征蚀刻到蚀刻层中，其中蚀刻层特征具有小于第一临界尺寸的第三临界尺寸。

4. 发明申请

US20060172540A1 Reduction of feature critical dimensions using multiple masks 有权
标题翻译：使用多个掩模降低功能关键尺寸
公开(公告)号：US20060172540A1
公开(公告)日：2006-08-03
申请号：US11050985
申请日：2005-02-03
申请人： Jeffrey Marks , S.M. Sadjadi
发明人： Jeffrey Marks , S.M. Sadjadi
IPC分类号： H01L21/311
CPC分类号： H01L21/0273 , H01L21/3088 , H01L21/31144 , H01L21/32139
摘要： A method for forming features in an etch layer is provided. A first mask is formed over the etch layer wherein the first mask defines a plurality of spaces with widths. A sidewall layer is formed over the first mask. Features are etched into the etch layer through the sidewall layer, wherein the features have widths that are smaller than the widths of the spaces defined by the first mask. The mask and sidewall layer are removed. An additional mask is formed over the etch layer wherein the additional mask defines a plurality of spaces with widths. A sidewall layer is formed over the additional mask. Features are etched into the etch layer through the sidewall layer, wherein the widths that are smaller than the widths of the spaces defined by the first mask. The mask and sidewall layer are removed.
摘要翻译：提供了一种在蚀刻层中形成特征的方法。在蚀刻层上形成第一掩模，其中第一掩模限定具有宽度的多个空间。在第一掩模上形成侧壁层。特征通过侧壁蚀刻到蚀刻层中，其中特征具有小于由第一掩模限定的空间的宽度的宽度。去除掩模和侧壁层。在蚀刻层上形成另外的掩模，其中附加掩模限定具有宽度的多个空间。侧壁层形成在附加掩模上。特征通过侧壁蚀刻到蚀刻层中，其中宽度小于由第一掩模限定的空间的宽度。去除掩模和侧壁层。

5. 发明申请

US20070264830A1 Pitch reduction 有权
标题翻译：节距减少
公开(公告)号：US20070264830A1
公开(公告)日：2007-11-15
申请号：US11432194
申请日：2006-05-10
申请人： Zhisong Huang , Jeffrey Marks , S.M. Sadjadi
发明人： Zhisong Huang , Jeffrey Marks , S.M. Sadjadi
IPC分类号： H01L21/311 , H01L21/306
CPC分类号： H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L21/32139
摘要： A method for providing features in an etch layer is provided. A sacrificial patterned layer with sacrificial features is provided over an etch layer. Conformal sidewalls are formed in the sacrificial features, comprising at least two cycles of a sidewall formation process, wherein each cycle comprises a sidewall deposition phase and a sidewall profile shaping phase. Parts of the sacrificial patterned layer between conformal sidewalls are removed leaving the conformal sidewalls with gaps between the conformal sidewalls where parts of the sacrificial patterned layer were selectively removed. Features are etched in the etch layer using the conformal sidewalls as an etch mask, wherein the features in the etch layer are etched through the gaps between the conformal sidewalls where parts of the sacrificial patterned layer were selectively removed.
摘要翻译：提供了一种用于在蚀刻层中提供特征的方法。在蚀刻层上提供具有牺牲特征的牺牲图案层。保形侧壁形成在牺牲特征中，包括侧壁形成工艺的至少两个循环，其中每个循环包括侧壁沉积阶段和侧壁轮廓成形阶段。除去共形侧壁之间的牺牲图案层的部分，留下保形侧壁，其中保形侧壁之间的间隙被选择性地去除牺牲图案层的部分。使用保形侧壁作为蚀刻掩模在蚀刻层中蚀刻特征，其中蚀刻层中的特征被蚀刻通过牺牲图案层的部分被选择性去除的共形侧壁之间的间隙。

6. 发明申请

US20090062941A1 HEAT INDEX 审中-公开
标题翻译：热指数
公开(公告)号：US20090062941A1
公开(公告)日：2009-03-05
申请号：US12201971
申请日：2008-08-29
申请人： Bryan Biniak , Richard Berroteran , Chris Cunningham , Atanas Ivanov , Jeffrey Marks , Brock Meltzer
发明人： Bryan Biniak , Richard Berroteran , Chris Cunningham , Atanas Ivanov , Jeffrey Marks , Brock Meltzer
IPC分类号： G06F19/00
CPC分类号： A63B71/06 , A63B24/0062 , A63B2071/065 , A63B2225/20 , A63B2225/50 , A63B2243/0037 , A63B2243/007
摘要： The system generates a heat index for each player in a sporting event. Historical data is maintained over time and is available for display by a user. In one embodiment, the heat index is provided via a network such as the internet. In another embodiment, the heat index is displayed as part of an event or game broadcast. The heat index represents the current level of performance of a player pursuant to a calculation algorithm that includes objective and subjective information. The objective information includes statistical data from a game or contest. The subjective information may include references from announcers and input from viewers.
摘要翻译：该系统为体育赛事中的每个玩家生成热指数。历史数据经过一段时间的维护，可供用户显示。在一个实施例中，热指数通过诸如互联网的网络来提供。在另一个实施例中，热指数被显示为事件或游戏广播的一部分。热指数代表根据包括客观和主观信息的计算算法的玩家目前的表现水平。客观信息包括来自游戏或比赛的统计数据。主观信息可能包括播音员的参考资料和观众的输入。

7. 发明申请

US20080055885A1 Display device 审中-公开
标题翻译：显示设备
公开(公告)号：US20080055885A1
公开(公告)日：2008-03-06
申请号：US11822163
申请日：2007-07-03
申请人： Jeffrey Marks
发明人： Jeffrey Marks
IPC分类号： F21V33/00
CPC分类号： G09F19/12 , F21S10/002
摘要： A multi-functional decorative display device as shown and described.
摘要翻译：如图所示的多功能装饰性显示装置。

8. 发明授权

US07271107B2 Reduction of feature critical dimensions using multiple masks 有权
标题翻译：使用多个掩模降低功能关键尺寸
公开(公告)号：US07271107B2
公开(公告)日：2007-09-18
申请号：US11050985
申请日：2005-02-03
申请人： Jeffrey Marks , S. M. Reza Sadjadi
发明人： Jeffrey Marks , S. M. Reza Sadjadi
IPC分类号： H01L21/311
CPC分类号： H01L21/0273 , H01L21/3088 , H01L21/31144 , H01L21/32139
摘要： A method for forming features in an etch layer is provided. A first mask is formed over the etch layer wherein the first mask defines a plurality of spaces with widths. A sidewall layer is formed over the first mask. Features are etched into the etch layer through the sidewall layer, wherein the features have widths that are smaller than the widths of the spaces defined by the first mask. The mask and sidewall layer are removed. An additional mask is formed over the etch layer wherein the additional mask defines a plurality of spaces with widths. A sidewall layer is formed over the additional mask. Features are etched into the etch layer through the sidewall layer, wherein the widths that are smaller than the widths of the spaces defined by the first mask. The mask and sidewall layer are removed.
摘要翻译：提供了一种在蚀刻层中形成特征的方法。在蚀刻层上形成第一掩模，其中第一掩模限定具有宽度的多个空间。在第一掩模上形成侧壁层。特征通过侧壁蚀刻到蚀刻层中，其中特征具有小于由第一掩模限定的空间的宽度的宽度。去除掩模和侧壁层。在蚀刻层上形成另外的掩模，其中附加掩模限定具有宽度的多个空间。侧壁层形成在附加掩模上。特征通过侧壁蚀刻到蚀刻层中，其中宽度小于由第一掩模限定的空间的宽度。去除掩模和侧壁层。

9. 发明申请

US20060178835A1 Normalization methods for genotyping analysis 审中-公开
标题翻译：基因分型分析的归一化方法
公开(公告)号：US20060178835A1
公开(公告)日：2006-08-10
申请号：US11057321
申请日：2005-02-10
申请人： Jeffrey Marks
发明人： Jeffrey Marks
IPC分类号： G06F19/00
CPC分类号： G16B40/00 , G16B25/00 , G16B30/00
摘要： In arrays and other high density analysis platforms variabilities between data points and/or data sets may arise for a number of reasons. Disclosed are methods for addressing these variabilities and generating correction factors that may be used in conforming the data to expected or desired distributions. The methods may be adapted to operate with existing data analysis approaches and software applications to improve downstream analysis.
摘要翻译：在阵列和其他高密度分析平台中，数据点和/或数据集之间的变化可能由于多种原因而出现。公开了用于解决这些变异性并产生可用于使数据符合预期或期望分布的校正因子的方法。这些方法可以适应于使用现有数据分析方法和软件应用来改进下游分析。

10. 发明授权

US06908846B2 Method and apparatus for detecting endpoint during plasma etching of thin films 有权
标题翻译：用于在薄膜等离子体蚀刻期间检测端点的方法和装置
公开(公告)号：US06908846B2
公开(公告)日：2005-06-21
申请号：US10401114
申请日：2003-03-27
申请人： Brian K. McMillin , Eric Hudson , Jeffrey Marks
发明人： Brian K. McMillin , Eric Hudson , Jeffrey Marks
IPC分类号： H01L21/311 , H01L21/66 , H01L21/768 , H01L21/4763 , H01L21/302 , H01L23/48
CPC分类号： H01L21/76829 , H01J37/32963 , H01L21/31116 , H01L21/31138 , H01L21/76801 , H01L21/76807 , H01L22/26
摘要： A method for controlling a plasma etch process while etching a layer stack having a first layer disposed above an end-point generating layer is disclosed. The method includes etching through the first layer and at least partially through the end-point generating layer while monitoring an absorption rate of a light beam traversing an interior portion of the plasma processing chamber, wherein the end-point generating layer is selected from a material that produces a detectable change in the absorption rate when etched. The end-point generating layer is characterized by at least one of a first characteristic and a second characteristic. The first characteristic is an insufficient thickness to function as an etch stop layer, and the second characteristic is an insufficient selectivity to etchants employed to etch through the first layer to function as the etch stop layer. The method additionally includes generating an end-point signal upon detecting the detectable change.
摘要翻译：公开了一种用于在蚀刻具有设置在端点产生层上方的第一层的层堆叠的同时控制等离子体蚀刻工艺的方法。该方法包括：在监测穿过等离子体处理室的内部部分的光束的吸收率的同时，蚀刻穿过第一层并且至少部分地穿过端点产生层，其中端点产生层选自材料其在蚀刻时产生可检测的吸收速率变化。端点产生层的特征在于第一特征和第二特性中的至少一个。第一特征是不足以用作蚀刻停止层的厚度，并且第二特性对于用于蚀刻通过第一层以用作蚀刻停止层的蚀刻剂的选择性不足。该方法还包括在检测到可检测变化时产生端点信号。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式