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1. 发明申请

US20050039682A1 Multiple frequency plasma etch reactor 有权
标题翻译：多频等离子体蚀刻反应器
公开(公告)号：US20050039682A1
公开(公告)日：2005-02-24
申请号：US10645665
申请日：2003-08-22
申请人： Raj Dhindsa , S.M. Sadjadi , Felix Kozakevich , Dave Trussell , Lumin Li , Eric Lenz , Camelia Rusu , Mukund Srinivasan , Aaron Eppler , Jim Tietz , Jeffrey Marks
发明人： Raj Dhindsa , S.M. Sadjadi , Felix Kozakevich , Dave Trussell , Lumin Li , Eric Lenz , Camelia Rusu , Mukund Srinivasan , Aaron Eppler , Jim Tietz , Jeffrey Marks
IPC分类号： H01J37/32 , C23C16/00 , H05H1/24
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32165
摘要： A workpiece is processed with a plasma in a vacuum plasma processing chamber by exciting the plasma at several frequencies such that the excitation of the plasma by the several frequencies simultaneously causes several different phenomena to occur in the plasma. The chamber includes central top and bottom electrodes and a peripheral top and/or bottom electrode arrangement that is either powered by RF or is connected to a reference potential by a filter arrangement that passes at least one of the plasma excitation frequencies to the exclusion of other frequencies.
摘要翻译：通过以几个频率激发等离子体，在真空等离子体处理室中用等离子体处理工件，使得等离子体被几个频率激发同时导致在等离子体中发生几种不同的现象。该腔室包括中央顶部和底部电极以及由RF供电的外围顶部和/或底部电极装置，或通过将至少一个等离子体激发频率传递至排除另一个等离子体激发频率的滤波器装置连接到参考电位频率

2. 发明授权

US07405521B2 Multiple frequency plasma processor method and apparatus 有权
标题翻译：多频等离子体处理器的方法和装置
公开(公告)号：US07405521B2
公开(公告)日：2008-07-29
申请号：US10645665
申请日：2003-08-22
申请人： Raj Dhindsa , S. M. Reza Sadjadi , Felix Kozakevich , Dave Trussell , Lumin Li , Eric Lenz , Camelia Rusu , Mukund Srinivasan , Aaron Eppler , Jim Tietz , Jeffrey Marks
发明人： Raj Dhindsa , S. M. Reza Sadjadi , Felix Kozakevich , Dave Trussell , Lumin Li , Eric Lenz , Camelia Rusu , Mukund Srinivasan , Aaron Eppler , Jim Tietz , Jeffrey Marks
IPC分类号： H01J7/24 , C23F1/00 , C23C16/00
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32165
摘要： A workpiece is processed with a plasma in a vacuum plasma processing chamber by exciting the plasma at several frequencies such that the excitation of the plasma by the several frequencies simultaneously causes several different phenomena to occur in the plasma. The chamber includes central top and bottom electrodes and a peripheral top and/or bottom electrode arrangement that is either powered by RF or is connected to a reference potential by a filter arrangement that passes at least one of the plasma excitation frequencies to the exclusion of other frequencies.
摘要翻译：通过以几个频率激发等离子体，在真空等离子体处理室中用等离子体处理工件，使得等离子体被几个频率激发同时导致在等离子体中发生几种不同的现象。该腔室包括中央顶部和底部电极以及由RF供电的外围顶部和/或底部电极装置，或通过将至少一个等离子体激发频率传递至排除另一个等离子体激发频率的滤波器装置连接到参考电位频率

3. 发明申请

US20100327413A1 HARDMASK OPEN AND ETCH PROFILE CONTROL WITH HARDMASK OPEN 审中-公开
标题翻译： HARDMASK打开和调试配置控制与HARDMASK开放
公开(公告)号：US20100327413A1
公开(公告)日：2010-12-30
申请号：US12595234
申请日：2008-05-02
申请人： Jong Pil Lee , Seiji Kawaguchi , Camelia Rusu , Zhisong Huang , Mukund Srinivasan , Eric Hudson , Aaron Eppler
发明人： Jong Pil Lee , Seiji Kawaguchi , Camelia Rusu , Zhisong Huang , Mukund Srinivasan , Eric Hudson , Aaron Eppler
IPC分类号： H01L29/00 , H01L21/3065 , C23F1/08 , H01L21/306
CPC分类号： H01L21/31144 , H01L21/31122
摘要： A method for opening a carbon-based hardmask layer formed on an etch layer over a substrate is provided. The hardmask layer is disposed below a patterned mask. The substrate is placed in a plasma processing chamber. The hardmask layer is opened by flowing a hardmask opening gas including a COS component into the plasma chamber, forming a plasma from the hardmask opening gas, and stopping the flow of the hardmask opening gas. The hardmask layer may be made of amorphous carbon, or made of spun-on carbon, and the hardmask opening gas may further include O2.
摘要翻译：提供了一种用于打开形成在衬底上的蚀刻层上的碳基硬掩模层的方法。硬掩模层设置在图案化掩模下方。将基板放置在等离子体处理室中。通过将包括COS组分的硬掩模开口气体流入等离子体室来打开硬掩模层，从硬掩模开口气体形成等离子体，并阻止硬掩模开口气体的流动。硬掩模层可以由无定形碳制成，或由旋涂碳制成，并且硬掩模开口气体还可以包括O 2。

4. 发明授权

US07645707B2 Etch profile control 有权
标题翻译：蚀刻轮廓控制
公开(公告)号：US07645707B2
公开(公告)日：2010-01-12
申请号：US11095932
申请日：2005-03-30
申请人： Camelia Rusu , Zhisong Huang , Mukund Srinivasan , Eric A. Hudson , Aaron Eppler
发明人： Camelia Rusu , Zhisong Huang , Mukund Srinivasan , Eric A. Hudson , Aaron Eppler
IPC分类号： H01L21/302
CPC分类号： H01L21/31116
摘要： A method for etching a dielectric layer over a substrate and disposed below a mask is provided. The substrate is placed in a plasma processing chamber. An etchant gas comprising O2 and a sulfur component gas comprising at least one of H2S and a compound containing at least one carbon sulfur bond is provided into the plasma chamber. A plasma is formed from the etchant gas. Features are etched into the etch layer through the photoresist mask with the plasma from the etchant gas.
摘要翻译：提供了一种用于在衬底上蚀刻介质层并且设置在掩模下方的方法。将基板放置在等离子体处理室中。包含O 2和包含至少一种H2S的硫成分气体的蚀刻剂气体和含有至少一个碳硫键的化合物被提供到等离子体室中。等离子体由蚀刻剂气体形成。通过来自蚀刻剂气体的等离子体通过光致抗蚀剂掩模将特征蚀刻到蚀刻层中。

5. 发明申请

US20060226120A1 Etch profile control 有权
标题翻译：蚀刻轮廓控制
公开(公告)号：US20060226120A1
公开(公告)日：2006-10-12
申请号：US11095932
申请日：2005-03-30
申请人： Camelia Rusu , Zhisong Huang , Mukund Srinivasan , Eric Hudson , Aaron Eppler
发明人： Camelia Rusu , Zhisong Huang , Mukund Srinivasan , Eric Hudson , Aaron Eppler
IPC分类号： C23F1/00 , B44C1/22 , H01L21/461
CPC分类号： H01L21/31116
摘要： A method for etching a dielectric layer over a substrate and disposed below a mask is provided. The substrate is placed in a plasma processing chamber. An etchant gas comprising O2 and a sulfur component gas comprising at least one of H2S and a compound containing at least one carbon sulfur bond is provided into the plasma chamber. A plasma is formed from the etchant gas. Features are etched into the etch layer through the photoresist mask with the plasma from the etchant gas.
摘要翻译：提供了一种用于在衬底上蚀刻介质层并且设置在掩模下方的方法。将基板放置在等离子体处理室中。包含O 2 2的蚀刻剂气体和包含H 2 S 2的至少一种的硫成分气体和含有至少一个碳硫键的化合物被提供到等离子体室中。等离子体由蚀刻剂气体形成。通过来自蚀刻剂气体的等离子体通过光致抗蚀剂掩模将特征蚀刻到蚀刻层中。

6. 发明授权

US06391787B1 Stepped upper electrode for plasma processing uniformity 有权
公开(公告)号：US06391787B1
公开(公告)日：2002-05-21
申请号：US09689845
申请日：2000-10-13
申请人： Rajinder Dhindsa , Mukund Srinivasan , Aaron Eppler , Eric Lenz
发明人： Rajinder Dhindsa , Mukund Srinivasan , Aaron Eppler , Eric Lenz
IPC分类号： H01L2120
CPC分类号： H01J37/32009 , H01J37/3244 , Y10T156/10
摘要： A plasma discharge electrode having a front surface with a central portion thereof including gas outlets discharging a process gas which forms a plasma and a peripheral portion substantially surrounding the gas outlets. The peripheral portion has at least one step for controlling a density of the plasma formed by the electrode. The electrode can be used as the grounded upper electrode in a parallel plate plasma processing apparatus such as a plasma etching apparatus. The geometric features of the step and of a corresponding edge ring on the lower electrode can be varied to achieve the desired etch rate profile across a wafer surface.

7. 发明授权

US06824627B2 Stepped upper electrode for plasma processing uniformity 有权
标题翻译：阶梯式上电极用于等离子体处理的均匀性
公开(公告)号：US06824627B2
公开(公告)日：2004-11-30
申请号：US10139364
申请日：2002-05-07
申请人： Rajinder Dhindsa , Mukund Srinivasan , Aaron Eppler , Eric Lenz
发明人： Rajinder Dhindsa , Mukund Srinivasan , Aaron Eppler , Eric Lenz
IPC分类号： H01L2120
CPC分类号： H01J37/32009 , H01J37/3244 , Y10T156/10
摘要： A plasma discharge electrode having a front surface with a central portion thereof including gas outlets discharging a process gas which forms a plasma and a peripheral portion substantially surrounding the gas outlets. The peripheral portion has at least one step for controlling a density of the plasma formed by the electrode. The electrode can be used as the grounded upper electrode in a parallel plate plasma processing apparatus such as a plasma etching apparatus. The geometric features of the step and of a corresponding edge ring on the lower electrode can be varied to achieve the desired etch rate profile across a wafer surface.
摘要翻译：一种具有前表面的等离子体放电电极，其中心部分包括排出形成等离子体的工艺气体的气体出口和基本上围绕气体出口的周边部分。周边部分具有用于控制由电极形成的等离子体的密度的至少一个步骤。在等离子体蚀刻装置等平板等离子体处理装置中，电极可以用作接地上电极。可以改变下部电极上的台阶和对应的边缘环的几何特征以实现跨晶片表面所需的蚀刻速率分布。

8. 发明授权

US07547635B2 Process for etching dielectric films with improved resist and/or etch profile characteristics 有权
标题翻译：用于蚀刻具有改进的抗蚀剂和/或蚀刻轮廓特性的介电膜的工艺
公开(公告)号：US07547635B2
公开(公告)日：2009-06-16
申请号：US10170424
申请日：2002-06-14
申请人： Aaron Eppler , Mukund Srinivasan , Robert Chebi
发明人： Aaron Eppler , Mukund Srinivasan , Robert Chebi
IPC分类号： H01L21/302
CPC分类号： H01L21/32139 , H01L21/0276 , H01L21/31116 , H01L21/31138 , H01L21/32136
摘要： A process of etching openings in a dielectric layer includes supporting a semiconductor substrate in a plasma etch reactor, the substrate having a dielectric layer and a patterned photoresist and/or hardmask layer above the dielectric layer; supplying to the plasma etch reactor an etchant gas comprising (a) a fluorocarbon gas (CxFyHz, where x≧1, y≧1, and z≧0), (b) a silane-containing gas, hydrogen or a hydrocarbon gas (CxHy, where x≧1 and y≧4), (c) an optional oxygen-containing gas, and (d) an optional inert gas, wherein the flow rate ratio of the silane-containing gas to fluorocarbon gas is less than or equal to 0.1, or the flow rate ratio of the hydrogen or hydrocarbon gas to fluorocarbon gas is less than or equal to 0.5; energizing the etchant gas into a plasma; and plasma etching openings in the dielectric layer with enhanced photoresist/hardmask to dielectric layer selectivity and/or minimal photoresist distortion or striation.
摘要翻译：蚀刻电介质层中的开口的过程包括在等离子体蚀刻反应器中支撑半导体衬底，所述衬底在电介质层上方具有电介质层和图案化的光致抗蚀剂和/或硬掩模层; 向等离子体蚀刻反应器供应包括（a）碳氟化合物气体（CxFyHz，其中x> = 1，y> = 1和z> = 0）的蚀刻剂气体，（b）含硅烷的气体，氢气或烃气体（CxHy，其中x> = 1和y> = 4），（c）任选的含氧气体，和（d）任选的惰性气体，其中含硅烷气体与碳氟化合物气体的流速比为小于或等于0.1，或者氢气或烃气体与碳氟化合物气体的流量比小于或等于0.5; 将蚀刻剂气体激发成等离子体; 以及具有增强的光致抗蚀剂/硬掩模的电介质层中的等离子体蚀刻开口至介电层选择性和/或最小的光致抗蚀剂失真或条纹。

9. 发明授权

US06921724B2 Variable temperature processes for tunable electrostatic chuck 有权
标题翻译：可变静电卡盘的可变温度过程
公开(公告)号：US06921724B2
公开(公告)日：2005-07-26
申请号：US10235453
申请日：2002-09-04
申请人： Tom A. Kamp , Richard Gottscho , Steve Lee , Chris Lee , Yoko Yamaguchi , Vahid Vahedi , Aaron Eppler
发明人： Tom A. Kamp , Richard Gottscho , Steve Lee , Chris Lee , Yoko Yamaguchi , Vahid Vahedi , Aaron Eppler
IPC分类号： H01L21/3065 , H01L21/00 , H01L21/311 , H01L21/683 , H01L21/768 , H01L21/302
CPC分类号： H01L21/67248 , H01L21/31116 , H01L21/67069 , H01L21/6831 , H01L21/76804
摘要： An etch processor for etching a wafer includes a chuck for holding the wafer and a temperature sensor reporting a temperature of the wafer. The chuck includes a heater controlled by a temperature control system. The temperature sensor is operatively coupled to the temperature control system to maintain the temperature of the chuck at a selectable setpoint temperature. A first setpoint temperature and a second setpoint temperature are selected. The wafer is placed on the chuck and set to the first setpoint temperature. The wafer is then processed for a first period of time at the first setpoint temperature and for a second period of time at the second setpoint temperature.
摘要翻译：用于蚀刻晶片的蚀刻处理器包括用于保持晶片的卡盘和报告晶片温度的温度传感器。卡盘包括由温度控制系统控制的加热器。温度传感器可操作地耦合到温度控制系统以将卡盘的温度保持在可选择的设定点温度。选择第一设定点温度和第二设定点温度。将晶片放置在卡盘上并设置到第一设定点温度。然后将晶片在第一设定点温度下处理第一时间段，并在第二设定点温度下处理第二时间段。

10. 发明申请

US20060089005A1 PHOTORESIST CONDITIONING WITH HYDROGEN RAMPING 有权
标题翻译：光电放大器调光
公开(公告)号：US20060089005A1
公开(公告)日：2006-04-27
申请号：US10975209
申请日：2004-10-27
申请人： Keren Kanarik , Aaron Eppler
发明人： Keren Kanarik , Aaron Eppler
IPC分类号： C03C15/00 , H01L21/302
CPC分类号： H01L21/0276 , H01L21/31116
摘要： A method for etching a feature in an etch layer through a photoresist mask over a substrate is provided. A substrate with an etch layer disposed below a photoresist mask is placed in a process chamber. The photoresist mask is conditioned, wherein the conditioning comprises providing a conditioning gas comprising a hydrogen containing gas with a flow rate and at least one of a fluorocarbon and a hydrofluorocarbon with a flow rate to the process chamber; and energizing the conditioning gas to form the conditioning plasma. The conditioning plasma is stepped. An etch plasma is provided to the process chamber, wherein the etch plasma is different than the conditioning plasma. A feature is etched in the etch layer with the etch plasma.
摘要翻译：提供了一种通过衬底上的光致抗蚀剂掩模蚀刻蚀刻层中的特征的方法。将具有设置在光致抗蚀剂掩模下方的蚀刻层的衬底放置在处理室中。对光致抗蚀剂掩模进行调节，其中调理包括提供调节气体，该调节气体包括具有流速的含氢气体和至处理室的流速的氟碳化合物和氢氟烃中的至少一种; 并且调节调节气体以形成调理等离子体。调理等离子体是阶梯式的。蚀刻等离子体被提供到处理室，其中蚀刻等离子体不同于调节等离子体。蚀刻等离子体在蚀刻层中蚀刻特征。

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