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    • 6. 发明授权
    • Reduction of feature critical dimensions using multiple masks
    • 使用多个掩模降低功能关键尺寸
    • US07271107B2
    • 2007-09-18
    • US11050985
    • 2005-02-03
    • Jeffrey MarksS. M. Reza Sadjadi
    • Jeffrey MarksS. M. Reza Sadjadi
    • H01L21/311
    • H01L21/0273H01L21/3088H01L21/31144H01L21/32139
    • A method for forming features in an etch layer is provided. A first mask is formed over the etch layer wherein the first mask defines a plurality of spaces with widths. A sidewall layer is formed over the first mask. Features are etched into the etch layer through the sidewall layer, wherein the features have widths that are smaller than the widths of the spaces defined by the first mask. The mask and sidewall layer are removed. An additional mask is formed over the etch layer wherein the additional mask defines a plurality of spaces with widths. A sidewall layer is formed over the additional mask. Features are etched into the etch layer through the sidewall layer, wherein the widths that are smaller than the widths of the spaces defined by the first mask. The mask and sidewall layer are removed.
    • 提供了一种在蚀刻层中形成特征的方法。 在蚀刻层上形成第一掩模,其中第一掩模限定具有宽度的多个空间。 在第一掩模上形成侧壁层。 特征通过侧壁蚀刻到蚀刻层中,其中特征具有小于由第一掩模限定的空间的宽度的宽度。 去除掩模和侧壁层。 在蚀刻层上形成另外的掩模,其中附加掩模限定具有宽度的多个空间。 侧壁层形成在附加掩模上。 特征通过侧壁蚀刻到蚀刻层中,其中宽度小于由第一掩模限定的空间的宽度。 去除掩模和侧壁层。
    • 8. 发明授权
    • Method and apparatus for detecting endpoint during plasma etching of thin films
    • 用于在薄膜等离子体蚀刻期间检测端点的方法和装置
    • US06908846B2
    • 2005-06-21
    • US10401114
    • 2003-03-27
    • Brian K. McMillinEric HudsonJeffrey Marks
    • Brian K. McMillinEric HudsonJeffrey Marks
    • H01L21/311H01L21/66H01L21/768H01L21/4763H01L21/302H01L23/48
    • H01L21/76829H01J37/32963H01L21/31116H01L21/31138H01L21/76801H01L21/76807H01L22/26
    • A method for controlling a plasma etch process while etching a layer stack having a first layer disposed above an end-point generating layer is disclosed. The method includes etching through the first layer and at least partially through the end-point generating layer while monitoring an absorption rate of a light beam traversing an interior portion of the plasma processing chamber, wherein the end-point generating layer is selected from a material that produces a detectable change in the absorption rate when etched. The end-point generating layer is characterized by at least one of a first characteristic and a second characteristic. The first characteristic is an insufficient thickness to function as an etch stop layer, and the second characteristic is an insufficient selectivity to etchants employed to etch through the first layer to function as the etch stop layer. The method additionally includes generating an end-point signal upon detecting the detectable change.
    • 公开了一种用于在蚀刻具有设置在端点产生层上方的第一层的层堆叠的同时控制等离子体蚀刻工艺的方法。 该方法包括:在监测穿过等离子体处理室的内部部分的光束的吸收率的同时,蚀刻穿过第一层并且至少部分地穿过端点产生层,其中端点产生层选自材料 其在蚀刻时产生可检测的吸收速率变化。 端点产生层的特征在于第一特征和第二特性中的至少一个。 第一特征是不足以用作蚀刻停止层的厚度,并且第二特性对于用于蚀刻通过第一层以用作蚀刻停止层的蚀刻剂的选择性不足。 该方法还包括在检测到可检测变化时产生端点信号。