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1. 发明专利

IL182200D0 RF GROUND SWITCH FOR PLASMA PROCESSING SYSTEM 未知
公开(公告)号：IL182200D0
公开(公告)日：2007-07-24
申请号：IL18220007
申请日：2007-03-26
申请人： LAM RES CORP , FELIX KOZAKEVICH , RAJ DHINDSA , ERIC LENZ , RUSSELL MARTIN
IPC分类号： C23F20100101
摘要： An arrangement in a plasma processing system for selectively providing an RF grounding path between an electrode and ground. The arrangement includes an RF conduction path structure and an annular structure. The annular structure and the RF conduction path structure having two relative positions relative to one another. A first relative position of the two relative positions is characterized by the annular structure electrically coupling with the RF conduction path structure to provide a ground to the RF conduction path structure. A second relative position of the two relative positions is characterized by the annular structure being electrically uncoupled from the RF conduction path.

2. 发明授权

US08997684B2 Prevention of particle adders when contacting a liquid meniscus over a substrate 有权
标题翻译：当在液体弯液面上接触衬底时，防止颗粒加料器
公开(公告)号：US08997684B2
公开(公告)日：2015-04-07
申请号：US13250872
申请日：2011-09-30
申请人： Enrico Magni , Suresh Gupta , Mark Gahagan , Eric Lenz , Mike Ravkin
发明人： Enrico Magni , Suresh Gupta , Mark Gahagan , Eric Lenz , Mike Ravkin
IPC分类号： B05C11/00 , H01L21/67 , B05C11/10 , B05C5/02 , H01L21/677 , B05D3/10 , B05D3/00
CPC分类号： H01L21/67086 , B05C5/0254 , B05C11/1036 , B05C11/1039 , B05D3/002 , B05D3/104 , H01L21/6776 , Y10S134/902
摘要： A method for meniscus processing a substrate is provided. The method initiates with generating a meniscus spanning at least a length of the substrate. A pre-wetting liquid or vapor is dispensed. A substrate is moved through the dispensed pre-wetting liquid or vapor and the meniscus. The dispensed pre-wetting vapor condenses a pre-wetting liquid over a region of the substrate adjacent to a region of the substrate where the meniscus is generated. The pre-wetting liquid is deposited without substantially generating surface flow of the pre-wetting liquid on the substrate, and the pre-wetting liquid prevents the leading edge of the meniscus from contacting a dry surface region of the substrate.
摘要翻译：提供了一种用于弯液面处理衬底的方法。该方法开始产生跨越衬底的至少一段长度的弯液面。分配预润湿液体或蒸汽。将基底移动通过分配的预润湿液体或蒸气和弯液面。分配的预润湿蒸汽将预润湿液体在基板的与生成弯液面的区域相邻的区域上冷凝。沉积预润湿液体而基本上不会在基底上产生预润湿液体的表面流，并且预润湿液体防止弯月面的前缘接触基底的干表面区域。

3. 发明申请

US20120260517A1 Apparatus and Method for Reducing Substrate Pattern Collapse During Drying Operations 审中-公开
标题翻译：在干燥操作期间减少底物图案折叠的装置和方法
公开(公告)号：US20120260517A1
公开(公告)日：2012-10-18
申请号：US13089186
申请日：2011-04-18
申请人： Eric Lenz , Mike Ravkin , Katrina Mikhaylichenko
发明人： Eric Lenz , Mike Ravkin , Katrina Mikhaylichenko
IPC分类号： F26B3/00
CPC分类号： F26B3/04 , F26B21/145 , H01L21/02057 , H01L21/67034
摘要： Apparatuses and methods for drying a surface of a substrate includes a proximity drying head having a head body that includes a process surface configured to be disposed opposite a surface of a substrate when present. The process surface includes a first region, a second region and a third region. The first region is defined at a leading edge of the head body and includes a cavity region that is recessed into the head body. The cavity region includes a plurality of inlet ports that are used to introduce a vapor fluid to the cavity region. The second region is disposed proximate to the surface of the substrate when present and is located beside the first region. The third region is disposed proximate to the surface of the substrate when present and is located beside the second region. A plurality of vacuum ports is defined at the interface of the second region and the third region. The third region includes a plurality of angled inlet ports that are directed toward the second region. A method for performing a drying operation includes applying heated isopropyl alcohol as vapor to a wafer surface in the first region and heating the underside region of the wafer corresponding to the first region. Heated Nitrogen is injected to the surface of the wafer in the third region. The deionized water and isopropyl alcohol are removed from the surface of the wafer through the vacuum ports along with the Nitrogen so as to leave the wafer surface substantially dry.
摘要翻译：用于干燥基材表面的装置和方法包括：接近干燥头，其具有头部本体，头部主体包括被配置为当存在时与基底的表面相对设置的处理表面。处理表面包括第一区域，第二区域和第三区域。第一区域被限定在头部主体的前缘，并且包括凹入到头部本体中的空腔区域。空腔区域包括多个入口端口，用于将蒸汽流体引入空腔区域。当存在时，第二区域靠近衬底的表面设置并且位于第一区域旁边。当存在时，第三区域靠近基板的表面设置并且位于第二区域旁边。在第二区域和第三区域的界面处限定多个真空口。第三区域包括指向第二区域的多个成角度的入口端口。执行干燥操作的方法包括将加热的异丙醇作为蒸气施加到第一区域中的晶片表面并加热与第一区域相对应的晶片的下侧区域。在第三区域中将加热的氮气注入晶片的表面。去离子水和异丙醇通过真空端口与氮气一起从晶片表面除去，以使晶片表面基本上干燥。

4. 发明申请

US20120079698A1 Carrier for Reducing Entrance and/or Exit Marks Left by a Substrate-Processing Meniscus 失效
标题翻译：用于减少入口和/或退出标记的载体由底物加工半月板留下
公开(公告)号：US20120079698A1
公开(公告)日：2012-04-05
申请号：US13324295
申请日：2011-12-13
申请人： Robert O'Donnell , Eric Lenz , Mark Wilcoxson , Mike Ravkin , Alexander A. Yatskar
发明人： Robert O'Donnell , Eric Lenz , Mark Wilcoxson , Mike Ravkin , Alexander A. Yatskar
IPC分类号： B23P11/00
CPC分类号： H01L21/67051 , H01L21/6708 , Y10S134/902 , Y10S269/90 , Y10S269/902 , Y10T29/49826
摘要： A carrier for supporting a substrate during processing by a meniscus fowled by upper and lower proximity heads is described. The carrier includes a frame having an opening sized for receiving a substrate and a plurality of support pins for supporting the substrate within the opening. The opening is slightly larger than the substrate such that a gap exists between the substrate and the opening Means for reducing a size and frequency of entrance and/or exit marks on substrates is provided, the means aiding and encouraging liquid from the meniscus to evacuate the gap. A method for reducing the size and frequency of entrance and exit marks is also provided.
摘要翻译：描述了用于在加工期间通过上和下邻近头部的弯液面来支撑衬底的载体。载体包括具有开口的框架，该开口的尺寸用于容纳基底和用于将基底支撑在开口内的多个支撑销。开口略大于基板，使得在基板和开口之间存在间隙，用于减小基板上的入口和/或出口痕迹的尺寸和频率的装置，帮助和鼓励来自弯液面的液体以排出间隙。还提供了用于减小入口和出口标记的尺寸和频率的方法。

5. 发明授权

US07946303B2 Carrier for reducing entrance and/or exit marks left by a substrate-processing meniscus 失效
标题翻译：用于减少基板处理弯月面留下的入口和/或出口痕迹的载体
公开(公告)号：US07946303B2
公开(公告)日：2011-05-24
申请号：US11537501
申请日：2006-09-29
申请人： Robert O'Donnell , Eric Lenz , Mark Wilcoxson , Mike Ravkin , Alexander A. Yatskar
发明人： Robert O'Donnell , Eric Lenz , Mark Wilcoxson , Mike Ravkin , Alexander A. Yatskar
IPC分类号： B08B3/04 , B23Q1/25
CPC分类号： H01L21/67051 , H01L21/6708 , Y10S134/902 , Y10S269/90 , Y10S269/902 , Y10T29/49826
摘要： A carrier for supporting a substrate during processing by a meniscus formed by upper and lower proximity heads is described. The carrier includes a frame having an opening sized for receiving a substrate and a plurality of support pins for supporting the substrate within the opening. The opening is slightly larger than the substrate such that a gap exists between the substrate and the opening. Means for reducing a size and frequency of entrance and/or exit marks on substrates is provided, the means aiding and encouraging liquid from the meniscus to evacuate the gap. A method for reducing the size and frequency of entrance and exit marks is also provided.
摘要翻译：描述了在由上下接近头形成的弯液面的处理期间支撑衬底的载体。载体包括具有开口的框架，该开口的尺寸用于容纳基底和用于将基底支撑在开口内的多个支撑销。开口略大于基板，使得基板和开口之间存在间隙。提供了用于减小基板上的入口和/或出口痕迹的尺寸和频率的手段，该装置帮助和鼓励来自弯月面的液体以排出间隙。还提供了用于减小入口和出口标记的尺寸和频率的方法。

6. 发明申请

US20110024046A1 Apparatus and Method for Controlling Plasma Potential 审中-公开
标题翻译：用于控制等离子体电位的装置和方法
公开(公告)号：US20110024046A1
公开(公告)日：2011-02-03
申请号：US12905046
申请日：2010-10-14
申请人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
发明人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
IPC分类号： H01L21/306
CPC分类号： H01J37/32183 , H01J37/32091 , H01J37/32174 , H01J37/32532
摘要： An apparatus is provided for semiconductor wafer plasma processing. The apparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The lower electrode is also defined to support a semiconductor wafer in exposure to the plasma. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is defined by a doped semiconductor material. A doping concentration within the upper electrode varies radially from a center to a periphery of the upper electrode. The electric potential of the upper electrode influences an electric potential of the plasma within the chamber.
摘要翻译：提供了一种用于半导体晶片等离子体处理的装置。该装置包括具有下电极和设置在其中的上电极的腔室。下电极被定义为传输射频电流通过腔室以在腔室内产生等离子体。下电极也被限定为支持暴露于等离子体的半导体晶片。上电极设置在下电极的上方并与之隔开的关系。上电极由掺杂的半导体材料限定。上电极内的掺杂浓度从上电极的中心向周边径向变化。上电极的电位影响室内等离子体的电位。

7. 发明授权

US07632375B2 Electrically enhancing the confinement of plasma 失效
标题翻译：电加强等离子体的限制
公开(公告)号：US07632375B2
公开(公告)日：2009-12-15
申请号：US11024978
申请日：2004-12-30
申请人： Andras Kuthi , Jisoo Kim , Eric Lenz , Rajindar Dhindsa , Lumin Li , Reza Sadjadi
发明人： Andras Kuthi , Jisoo Kim , Eric Lenz , Rajindar Dhindsa , Lumin Li , Reza Sadjadi
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01J37/32623 , Y10S156/915
摘要： A vacuum plasma processor includes a chamber having a grounded wall and an outlet port. Plasma is excited at a first RF frequency in a chamber region spaced from the wall and outlet port. A structure confines the plasma to the region while enabling gas to flow from the region to the outlet port. RF electric power at a second frequency connected to the confining structure causes the confining structure to be at a potential different from ground to increase the size of a sheath between the plasma and confining structure and increase the confining structure effectiveness. The region includes an electrode connected to ground by a circuit that is series resonant to the first frequency and includes capacitance of the sheath.
摘要翻译：真空等离子体处理器包括具有接地壁和出口的室。等离子体在与壁和出口间隔开的室区域中以第一RF频率激发。结构将等离子体限制在该区域上，同时使气体能够从该区域流出到出口。连接到限制结构的第二频率的RF电力使得限制结构处于不同于地面的电位，以增加等离子体和限制结构之间的护套尺寸，并增加限制结构的有效性。该区域包括通过与第一频率串联谐振并包括护套的电容的电路连接到地的电极。

8. 发明申请

US20090165954A1 ELECTRICALLY ENHANCING THE CONFINEMENT OF PLASMA 失效
标题翻译：电动增强等离子体的浓度
公开(公告)号：US20090165954A1
公开(公告)日：2009-07-02
申请号：US11024978
申请日：2004-12-30
申请人： Andras Kuthi , Jisoo Kim , Eric Lenz , Rajindar Dhindsa , Lumin Li , Reza Sadjadi
发明人： Andras Kuthi , Jisoo Kim , Eric Lenz , Rajindar Dhindsa , Lumin Li , Reza Sadjadi
IPC分类号： H01L21/306 , C23F1/08 , C23C16/54
CPC分类号： H01J37/32623 , Y10S156/915
摘要： A vacuum plasma processor includes a chamber having a grounded wall and an outlet port. Plasma is excited at a first RF frequency in a chamber region spaced from the wall and outlet port. A. structure confines the plasma to the region while enabling gas to flow from the region to the outlet port. RF electric power at a second frequency connected to the confining structure causes the confining structure to be at a potential different from ground to increase the size of a sheath between the plasma and confining structure and increase the confining structure effectiveness. The region includes an electrode connected to ground by a circuit that is series resonant to the first frequency and includes capacitance of the sheath.
摘要翻译：真空等离子体处理器包括具有接地壁和出口的室。等离子体在与壁和出口间隔开的室区域中以第一RF频率激发。 A.结构将等离子体限制在该区域上，同时使气体能够从该区域流出到出口。连接到限制结构的第二频率的RF电力使得限制结构处于不同于地面的电位，以增加等离子体和限制结构之间的护套尺寸，并增加限制结构的有效性。该区域包括通过与第一频率串联谐振并包括护套的电容的电路连接到地的电极。

9. 发明授权

US07393432B2 RF ground switch for plasma processing system 有权
标题翻译：射频接地开关等离子体处理系统
公开(公告)号：US07393432B2
公开(公告)日：2008-07-01
申请号：US10953229
申请日：2004-09-29
申请人： Rajinder Dhindsa , Felix Kozakevich , Eric Lenz , Russell Martin
发明人： Rajinder Dhindsa , Felix Kozakevich , Eric Lenz , Russell Martin
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H05H1/46 , H01J37/32091 , H01J37/32174 , H01J37/32568
摘要： An arrangement in a plasma processing system for selectively providing an RF grounding path between an electrode and ground. The arrangement includes an RF conduction path structure and an annular structure. The annular structure and the RF conduction path structure having two relative positions relative to one another. A first relative position of the two relative positions is characterized by the annular structure electrically coupling with the RF conduction path structure to provide a ground to the RF conduction path structure. A second relative position of the two relative positions is characterized by the annular structure being electrically uncoupled from the RF conduction path.
摘要翻译：等离子体处理系统中的布置，用于选择性地提供电极和地面之间的RF接地路径。该装置包括RF传导路径结构和环形结构。环形结构和RF传导路径结构具有相对于彼此的两个相对位置。两个相对位置的第一相对位置的特征在于环形结构与RF传导路径结构电耦合以提供到RF传导路径结构的接地。两个相对位置的第二相对位置的特征在于环形结构与RF传导路径电耦合。

10. 发明申请

US20080081775A1 CARRIER FOR REDUCING ENTRANCE AND/OR EXIT MARKS LEFT BY A SUBSTRATE-PROCESSING MENISCUS 失效
标题翻译：承运人减少进口和/或退出标记由基板处理的菜单
公开(公告)号：US20080081775A1
公开(公告)日：2008-04-03
申请号：US11537501
申请日：2006-09-29
申请人： Robert O'Donnell , Eric Lenz , Mark Wilcoxson , Mike Ravkin , Alexander A. Yatskar
发明人： Robert O'Donnell , Eric Lenz , Mark Wilcoxson , Mike Ravkin , Alexander A. Yatskar
IPC分类号： C11D3/20
CPC分类号： H01L21/67051 , H01L21/6708 , Y10S134/902 , Y10S269/90 , Y10S269/902 , Y10T29/49826
摘要： A carrier for supporting a substrate during processing by a meniscus formed by upper and lower proximity heads is described. The carrier includes a frame having an opening sized for receiving a substrate and a plurality of support pins for supporting the substrate within the opening. The opening is slightly larger than the substrate such that a gap exists between the substrate and the opening. Means for reducing a size and frequency of entrance and/or exit marks on substrates is provided, the means aiding and encouraging liquid from the meniscus to evacuate the gap. A method for reducing the size and frequency of entrance and exit marks is also provided.
摘要翻译：描述了在由上下接近头形成的弯液面的处理期间支撑衬底的载体。载体包括具有开口的框架，该开口的尺寸用于容纳基底和用于将基底支撑在开口内的多个支撑销。开口略大于基板，使得基板和开口之间存在间隙。提供了用于减小基板上的入口和/或出口痕迹的尺寸和频率的手段，该装置帮助和鼓励来自弯月面的液体以排出间隙。还提供了用于减小入口和出口标记的尺寸和频率的方法。

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