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    • 1. 发明授权
    • Semiconductor device
    • 半导体器件
    • US09012963B2
    • 2015-04-21
    • US13501518
    • 2011-11-18
    • Qingqing LiangMiao XuHuilong ZhuHuicai Zhong
    • Qingqing LiangMiao XuHuilong ZhuHuicai Zhong
    • H01L29/66H01L29/786H01L29/49
    • H01L29/78654H01L29/4908H01L29/78603H01L29/78648H01L29/78696
    • The present application discloses a semiconductor device comprising a source region and a drain region in an ultra-thin semiconductor layer; a channel region between the source region and the drain region in the ultra-thin semiconductor layer; a front gate stack above the channel region, the front gate comprising a front gate and a front gate dielectric between the front gate and the channel region; and a back gate stack below the channel region, the back gate stack comprising a back gate and a back gate dielectric between the back gate and the channel region, wherein the front gate is made of a high-Vt material, and the back gate is made of a low-Vt material. According to another embodiment, the front gate and the back gate are made of the same material, and the back gate is applied with a forward bias voltage during operation. The semiconductor device alleviates threshold voltage fluctuation due to varied thickness of the channel region by means of the back gate.
    • 本申请公开了一种半导体器件,其包括超薄半导体层中的源极区域和漏极区域; 在超薄半导体层中的源极区域和漏极区域之间的沟道区域; 在所述沟道区域上方的前栅极堆叠,所述前栅极包括在所述前栅极和所述沟道区域之间的前栅极和前栅极电介质; 以及在沟道区域下方的背栅极堆叠,所述背栅叠层包括在所述背栅极和沟道区域之间的背栅极和背栅电介质,其中所述前栅极由高Vt材料制成,并且所述背栅极 由低Vt材料制成。 根据另一实施例,前栅极和后栅极由相同的材料制成,并且背栅在工作期间被施加正偏压。 半导体器件通过后栅极减小由沟道区域的厚度变化引起的阈值电压波动。
    • 2. 发明申请
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • US20130049092A1
    • 2013-02-28
    • US13501518
    • 2011-11-18
    • Qingqing LiangMiao XuHuilong ZhuHuicai Zhong
    • Qingqing LiangMiao XuHuilong ZhuHuicai Zhong
    • H01L29/786H01L29/78
    • H01L29/78654H01L29/4908H01L29/78603H01L29/78648H01L29/78696
    • The present application discloses a semiconductor device comprising a source region and a drain region in an ultra-thin semiconductor layer; a channel region between the source region and the drain region in the ultra-thin semiconductor layer; a front gate stack above the channel region, the front gate comprising a front gate and a front gate dielectric between the front gate and the channel region; and a back gate stack below the channel region, the back gate stack comprising a back gate and a back gate dielectric between the back gate and the channel region, wherein the front gate is made of a high-Vt material, and the back gate is made of a low-Vt material. According to another embodiment, the front gate and the back gate are made of the same material, and the back gate is applied with a forward bias voltage during operation. The semiconductor device alleviates threshold voltage fluctuation due to varied thickness of the channel region by means of the back gate.
    • 本申请公开了一种包括超薄半导体层中的源极区域和漏极区域的半导体器件; 在超薄半导体层中的源极区域和漏极区域之间的沟道区域; 在所述沟道区域上方的前栅极堆叠,所述前栅极包括在所述前栅极和所述沟道区域之间的前栅极和前栅极电介质; 以及在沟道区域下方的背栅极堆叠,所述背栅叠层包括在所述背栅极和所述沟道区域之间的背栅极和背栅电介质,其中所述前栅极由高Vt材料制成,并且所述背栅极 由低Vt材料制成。 根据另一实施例,前栅极和后栅极由相同的材料制成,并且背栅在工作期间被施加正偏压。 半导体器件通过后栅极减小由沟道区域的厚度变化引起的阈值电压波动。
    • 3. 发明授权
    • Semiconductor structure and method for manufacturing the same
    • 半导体结构及其制造方法
    • US09419108B2
    • 2016-08-16
    • US14406904
    • 2012-08-17
    • Qingqing LiangHuicai ZhongHuilong ZhuChao ZhaoTianchun Ye
    • Qingqing LiangHuicai ZhongHuilong ZhuChao ZhaoTianchun Ye
    • H01L29/66H01L29/78
    • H01L29/66795H01L29/785H01L29/7855
    • One embodiment of present invention provides a method for manufacturing a semiconductor structure, which comprises: forming a gate stack on a semiconductor substrate and removing parts of the substrates situated on two sides of the gate stack; forming sidewall spacers on sidewalls of the gate stack and on sidewalls of the part of the substrate under the gate stack; forming doped regions in parts of the substrate on two sides of the gate stack, and forming a first dielectric layer to cover the entire semiconductor structure; selectively removing parts of the gate stack and parts of the first dielectric layer to form a channel region opening and source/drain region openings; forming a high K dielectric layer on sidewalls of the channel region opening; and implementing epitaxy process to form a continuous fin structure that spans across the channel region opening and the source/drain region openings.
    • 本发明的一个实施例提供了一种用于制造半导体结构的方法,其包括:在半导体衬底上形成栅极叠层并去除位于栅极叠层两侧的衬底的部分; 在所述栅极堆叠的侧壁上以及在所述栅极堆叠下的所述衬底的所述部分的侧壁上形成侧壁间隔物; 在所述栅极堆叠的两侧上在所述衬底的部分中形成掺杂区域,以及形成覆盖整个半导体结构的第一介电层; 选择性地去除所述栅极堆叠的部分和所述第一介电层的部分以形成沟道区域开口和源极/漏极区域开口; 在沟道区域开口的侧壁上形成高K电介质层; 并且实现外延工艺以形成跨越沟道区域开口和源极/漏极区域开口的连续翅片结构。
    • 4. 发明授权
    • Fin field-effect transistor and method for manufacturing the same
    • 翅片场效应晶体管及其制造方法
    • US08859378B2
    • 2014-10-14
    • US13377141
    • 2011-08-10
    • Qingqing LiangHuicai ZhongHuilong Zhu
    • Qingqing LiangHuicai ZhongHuilong Zhu
    • H01L21/336H01L27/12H01L21/8234H01L21/84H01L27/088H01L29/66
    • H01L27/1211H01L21/823431H01L21/845H01L27/0886H01L29/66545
    • Embodiments of the present invention disclose a method for manufacturing a Fin Field-Effect Transistor. When a fin is formed, a dummy gate across the fin is formed on the fin, a spacer is formed on sidewalls of the dummy gate, and a cover layer is formed on the first dielectric layer and on the fin outside the dummy gate and the spacer; then, an self-aligned and elevated source/drain region is formed at both sides of the dummy gate by the spacer, wherein the upper surfaces of the gate and the source/drain region are in the same plane. The upper surfaces of the gate and the source/drain region are in the same plane, making alignment of the contact plug easier; and the gate and the source/drain region are separated by the spacer, thereby improving alignment accuracy, solving inaccurate alignment of the contact plug, and improving device AC performance.
    • 本发明的实施例公开了一种制造Fin场效应晶体管的方法。 当形成翅片时,在翅片上形成跨鳍片的虚拟栅极,在虚拟栅极的侧壁上形成间隔物,并且在第一介电层上形成覆盖层,并在模拟栅极外部形成覆盖层, 间隔物 然后,通过间隔件在虚拟栅极的两侧形成自对准和升高的源极/漏极区域,其中栅极和源极/漏极区域的上表面在同一平面内。 栅极和源极/漏极区域的上表面位于相同的平面中,使接触插塞的对准更容易; 并且栅极和源极/漏极区域被间隔物分开,从而提高对准精度,解决接触插塞的不准确的对准以及提高器件AC性能。
    • 6. 发明申请
    • SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING THE SAME
    • 半导体器件及其制造方法
    • US20140027864A1
    • 2014-01-30
    • US13578872
    • 2012-05-18
    • Huilong ZhuQingqing LiangHuicai Zhong
    • Huilong ZhuQingqing LiangHuicai Zhong
    • H01L21/336H01L29/78
    • H01L29/6659H01L29/66659H01L29/7835
    • Semiconductor devices and methods for manufacturing the same are disclosed. In one embodiment, the method comprises: forming a first shielding layer on a substrate, and forming a first spacer on a sidewall of the first shielding layer; forming one of source and drain regions with the first shielding layer and the first spacer as a mask; forming a second shielding layer on the substrate, and removing the first shielding layer; forming the other of the source and drain regions with the second shielding layer and the first spacer as a mask; removing at least a portion of the first spacer; and forming a gate dielectric layer, and forming a gate conductor in the form of spacer on a sidewall of the second shielding layer or on a sidewall of a remaining portion of the first spacer.
    • 公开了半导体装置及其制造方法。 在一个实施例中,该方法包括:在衬底上形成第一屏蔽层,并在第一屏蔽层的侧壁上形成第一间隔物; 用第一屏蔽层和第一间隔件作为掩模形成源区和漏区之一; 在所述基板上形成第二屏蔽层,并移除所述第一屏蔽层; 用第二屏蔽层和第一间隔物作为掩模形成源区和漏区中的另一个; 去除所述第一间隔物的至少一部分; 以及形成栅极电介质层,以及在所述第二屏蔽层的侧壁或所述第一间隔物的剩余部分的侧壁上形成间隔物形式的栅极导体。
    • 8. 发明申请
    • DEVICE PERFORMANCE PREDICTION METHOD AND DEVICE STRUCTURE OPTIMIZATION METHOD
    • 器件性能预测方法和器件结构优化方法
    • US20120290998A1
    • 2012-11-15
    • US13320291
    • 2011-04-26
    • Qingqing LiangHuilong ZhuHuicai ZhongMeng Li
    • Qingqing LiangHuilong ZhuHuicai ZhongMeng Li
    • G06F17/50
    • H01L22/20
    • The present application discloses a device performance prediction method and a device structure optimization method. According to an embodiment of the present invention, a set of structural parameters and/or process parameters for a semiconductor device constitutes a parameter point in a parameter space, and a behavioral model library is established with respect to a plurality of discrete predetermined parameter points in the parameter space, and the predetermined parameter points being associated with their respective performance indicator values in the behavioral model library. The device performance prediction method comprises: inputting a parameter point, called “predicting point”, whose performance indicator value is to be predicted; and if the predicting point has a corresponding record in the behavioral model library, outputting the corresponding performance indicator value as a predicted performance indicator value of the predicting point, or otherwise if there is no record corresponding to the predicting point in the behavioral model library, calculating a predicted performance indicator value of the predicting point by interpolation based on Delaunay triangulation.
    • 本申请公开了一种设备性能预测方法和设备结构优化方法。 根据本发明的实施例,用于半导体器件的一组结构参数和/或工艺参数构成参数空间中的参数点,并且针对多个离散的预定参数点建立行为模型库 参数空间以及与行为模型库中其各自的性能指标值相关联的预定参数点。 设备性能预测方法包括:输入要预测其性能指标值的称为预测点的参数点; 并且如果预测点在行为模型库中具有对应的记录,则输出相应的表现指标值作为预测点的预测性能指标值,否则如果没有与行为模型库中的预测点相对应的记录, 通过基于Delaunay三角测量的插值计算预测点的预测性能指标值。
    • 9. 发明申请
    • SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE
    • 半导体器件和半导体存储器件
    • US20120281468A1
    • 2012-11-08
    • US13320331
    • 2011-08-10
    • Qingqing LiangXiaodong TongHuicai ZhongHuilong Zhu
    • Qingqing LiangXiaodong TongHuicai ZhongHuilong Zhu
    • G11C11/34
    • G11C11/39G11C17/06G11C2213/72G11C2213/74H01L27/1027
    • The present disclosure provides a semiconductor device and a semiconductor memory device. The semiconductor device can be used as a memory cell, and may comprise a first P-type semiconductor layer, a first N-type semiconductor layer, a second P-type semiconductor layer, and a second N-type semiconductor layer arranged in sequence. A first data state may be stored in the semiconductor device by applying a forward bias, which is larger than a punch-through voltage VBO, between the first P-type semiconductor layer and the second N-type semiconductor layer. A second data state may be stored in the semiconductor device by applying a reverse bias, which is approaching to the reverse breakdown region of the semiconductor device, between the first P-type semiconductor layer and the second N-type semiconductor layer. In this way, the semiconductor device may be effectively used for data storage. The semiconductor memory device comprises an array of memory cells consisted of the semiconductor devices.
    • 本公开提供了半导体器件和半导体存储器件。 半导体器件可以用作存储单元,并且可以包括依次布置的第一P型半导体层,第一N型半导体层,第二P型半导体层和第二N型半导体层。 第一数据状态可以通过在第一P型半导体层和第二N型半导体层之间施加大于穿通电压VBO的正向偏压来存储在半导体器件中。 第二数据状态可以通过在第一P型半导体层和第二N型半导体层之间施加正在接近半导体器件的反向击穿区域的反向偏压来存储在半导体器件中。 以这种方式,半导体器件可以有效地用于数据存储。 半导体存储器件包括由半导体器件组成的存储器单元的阵列。