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1. 发明授权

US09633876B2 Selective reflectivity process chamber with customized wavelength response and method 有权
公开(公告)号：US09633876B2
公开(公告)日：2017-04-25
申请号：US12776845
申请日：2010-05-10
申请人： Paul J. Timans , Daniel J. Devine , Young Jai Lee , Yao Zhi Hu , Peter C. Bordiga
发明人： Paul J. Timans , Daniel J. Devine , Young Jai Lee , Yao Zhi Hu , Peter C. Bordiga
IPC分类号： F27D11/00 , H01L21/67 , F27B17/00
CPC分类号： H01L21/67115 , F27B17/0025
摘要： A customizable chamber spectral response is described which can be used at least to tailor chamber performance for wafer heating, wafer cooling, temperature measurement, and stray light. In one aspect, a system is described for processing a treatment object having a given emission spectrum at a treatment object temperature which causes the treatment object to produce a treatment object radiated energy. The chamber responds in a first way to the heating arrangement radiated energy and in a second way to the treatment object radiated energy that is incident thereon. The chamber may respond in the first way by reflecting the majority of the heat source radiated energy and in the second way by absorbing the majority of the treatment object radiated energy. Different portions of the chamber may be treated with selectively reflectivity based on design considerations to achieve objectives with respect to a particular chamber performance parameter.

2. 发明申请

US20100219174A1 Selective Reflectivity Process Chamber with Customized Wavelength Response and Method 有权
标题翻译：具有定制波长响应和方法的选择性反射过程室
公开(公告)号：US20100219174A1
公开(公告)日：2010-09-02
申请号：US12776845
申请日：2010-05-10
申请人： Paul J. Timans , Daniel J. Devine , Young Jai Lee , Yao Zhi Hu , Peter C. Bordiga
发明人： Paul J. Timans , Daniel J. Devine , Young Jai Lee , Yao Zhi Hu , Peter C. Bordiga
IPC分类号： F27D11/00
CPC分类号： H01L21/67115 , F27B17/0025
摘要： A customizable chamber spectral response is described which can be used at least to tailor chamber performance for wafer heating, wafer cooling, temperature measurement, and stray light. In one aspect, a system is described for processing a treatment object having a given emission spectrum at a treatment object temperature which causes the treatment object to produce a treatment object radiated energy. The chamber responds in a first way to the heating arrangement radiated energy and in a second way to the treatment object radiated energy that is incident thereon. The chamber may respond in the first way by reflecting the majority of the heat source radiated energy and in the second way by absorbing the majority of the treatment object radiated energy. Different portions of the chamber may be treated with selectively reflectivity based on design considerations to achieve objectives with respect to a particular chamber performance parameter.
摘要翻译：描述了可定制的室光谱响应，其可以至少用于定制晶片加热，晶片冷却，温度测量和杂散光的室性能。在一个方面，描述了一种系统，用于处理在处理对象温度下具有给定发射光谱的治疗对象，其使得治疗对象产生治疗对象的辐射能。室以第一种方式响应于加热装置的辐射能量，并以第二种方式响应入射在其上的处理对象辐射能。通过反映大部分热源辐射能量，腔室可以以第一种方式作出反应，并且以第二种方式吸收大部分治疗对象的辐射能量。可以基于设计考虑来选择反射率来处理室的不同部分，以实现关于特定室性能参数的目标。

3. 发明授权

US07737385B2 Selective reflectivity process chamber with customized wavelength response and method 有权
标题翻译：选择性反射处理室，具有定制的波长响应和方法
公开(公告)号：US07737385B2
公开(公告)日：2010-06-15
申请号：US11506174
申请日：2006-08-16
申请人： Paul J. Timans , Daniel J. Devine , Young Jai Lee , Yao Zhi Hu , Peter C. Bordiga
发明人： Paul J. Timans , Daniel J. Devine , Young Jai Lee , Yao Zhi Hu , Peter C. Bordiga
IPC分类号： F27B5/14 , F26B19/00
CPC分类号： H01L21/67115 , F27B17/0025
摘要： A customizable chamber spectral response is described which can be used at least to tailor chamber performance for wafer heating, wafer cooling, temperature measurement, and stray light. In one aspect, a system is described for processing a treatment object having a given emission spectrum at a treatment object temperature which causes the treatment object to produce a treatment object radiated energy. The chamber responds in a first way to the heating arrangement radiated energy and in a second way to the treatment object radiated energy that is incident thereon. The chamber may respond in the first way by reflecting the majority of the heat source radiated energy and in the second way by absorbing the majority of the treatment object radiated energy. Different portions of the chamber may be treated with selectively reflectivity based on design considerations to achieve objectives with respect to a particular chamber performance parameter.
摘要翻译：描述了可定制的室光谱响应，其可以至少用于定制晶片加热，晶片冷却，温度测量和杂散光的室性能。在一个方面，描述了一种系统，用于处理在处理对象温度下具有给定发射光谱的治疗对象，其使得治疗对象产生治疗对象的辐射能。腔室以第一种方式响应于加热装置的辐射能量，并以第二种方式响应入射在其上的治疗对象辐射能。通过反映大部分热源辐射能量，腔室可以以第一种方式作出反应，并且以第二种方式吸收大部分治疗对象的辐射能量。可以基于设计考虑来选择反射率来处理室的不同部分，以实现关于特定室性能参数的目标。

4. 发明授权

US07115837B2 Selective reflectivity process chamber with customized wavelength response and method 有权
标题翻译：选择性反射处理室，具有定制的波长响应和方法
公开(公告)号：US07115837B2
公开(公告)日：2006-10-03
申请号：US10629400
申请日：2003-07-28
申请人： Paul J. Timans , Daniel J. Devine , Young Jai Lee , Yao Zhi Hu , Peter C. Bordiga
发明人： Paul J. Timans , Daniel J. Devine , Young Jai Lee , Yao Zhi Hu , Peter C. Bordiga
IPC分类号： F27B5/14 , F26B19/00
CPC分类号： H01L21/67115 , F27B17/0025
摘要： A customizable chamber spectral response is described which can be used at least to tailor chamber performance for wafer heating, wafer cooling, temperature measurement, and stray light. In one aspect, a system is described for processing a treatment object having a given emission spectrum at a treatment object temperature which causes the treatment object to produce a treatment object radiated energy. The chamber responds in a first way to the heating arrangement radiated energy and in a second way to the treatment object radiated energy that is incident thereon. The chamber may respond in the first way by reflecting the majority of the heat source radiated energy and in the second way by absorbing the majority of the treatment object radiated energy. Different portions of the chamber may be treated with selectively reflectivity based on design considerations to achieve objectives with respect to a particular chamber performance parameter.
摘要翻译：描述了可定制的室光谱响应，其可以至少用于定制晶片加热，晶片冷却，温度测量和杂散光的室性能。在一个方面，描述了一种系统，用于处理在处理对象温度下具有给定发射光谱的治疗对象，其使得治疗对象产生治疗对象的辐射能。室以第一种方式响应于加热装置的辐射能量，并以第二种方式响应入射在其上的处理对象辐射能。通过反映大部分热源辐射能量，腔室可以以第一种方式作出反应，并且以第二种方式吸收大部分治疗对象的辐射能量。可以基于设计考虑来选择反射率来处理室的不同部分，以实现关于特定室性能参数的目标。

5. 发明授权

US07977258B2 Method and system for thermally processing a plurality of wafer-shaped objects 有权
标题翻译：用于热处理多个晶片形物体的方法和系统
公开(公告)号：US07977258B2
公开(公告)日：2011-07-12
申请号：US11784503
申请日：2007-04-06
申请人： Zsolt Nenyei , Paul J. Timans , Wilfried Lerch , Jüergen Niess , Manfred Falter , Patrick Schmid , Conor Patrick O'Carroll , Rudy Cardema , Igor Fidelman , Sing-Pin Tay , Yao Zhi Hu , Daniel J. Devine
发明人： Zsolt Nenyei , Paul J. Timans , Wilfried Lerch , Jüergen Niess , Manfred Falter , Patrick Schmid , Conor Patrick O'Carroll , Rudy Cardema , Igor Fidelman , Sing-Pin Tay , Yao Zhi Hu , Daniel J. Devine
IPC分类号： H01L21/00 , F27B9/14
CPC分类号： H01L21/67115
摘要： Process and system for processing wafer-shaped objects, such as semiconductor wafers is disclosed. In accordance with the present disclosure, a multiple of two wafers are processed in a thermal processing chamber. The thermal processing chamber is in communication with at least one heating device for heating the wafers. The wafers are placed in the thermal processing chamber in a face-to-face configuration or in a back-to-back configuration.
摘要翻译：公开了用于处理诸如半导体晶片的晶片状物体的工艺和系统。根据本公开，在热处理室中处理两个晶片的倍数。热处理室与用于加热晶片的至少一个加热装置连通。将晶片以面对面配置或背对背配置放置在热处理室中。

6. 发明申请

US20080248657A1 Method and system for thermally processing a plurality of wafer-shaped objects 有权
标题翻译：用于热处理多个晶片形物体的方法和系统
公开(公告)号：US20080248657A1
公开(公告)日：2008-10-09
申请号：US11784503
申请日：2007-04-06
申请人： Zsolt Nenyei , Paul J. Timans , Wilfried Lerch , Juergen Niess , Manfred Falter , Patrick Schmid , Conor Patrick O'Carroll , Rudy Cardema , Igor Fidelman , Sing-Pin Tay , Yao Zhi Hu , Daniel J. Devine
发明人： Zsolt Nenyei , Paul J. Timans , Wilfried Lerch , Juergen Niess , Manfred Falter , Patrick Schmid , Conor Patrick O'Carroll , Rudy Cardema , Igor Fidelman , Sing-Pin Tay , Yao Zhi Hu , Daniel J. Devine
IPC分类号： H01L21/00
CPC分类号： H01L21/67115
摘要： Process and system for processing wafer-shaped objects, such as semiconductor wafers is disclosed. In accordance with the present disclosure, a multiple of two wafers are processed in a thermal processing chamber. The thermal processing chamber is in communication with at least one heating device for heating the wafers. The wafers are placed in the thermal processing chamber in a face-to-face configuration or in a back-to-back configuration.
摘要翻译：公开了用于处理诸如半导体晶片的晶片状物体的工艺和系统。根据本公开，在热处理室中处理两个晶片的倍数。热处理室与用于加热晶片的至少一个加热装置连通。将晶片以面对面配置或背对背配置放置在热处理室中。

7. 发明申请

US20090325386A1 Process and System For Varying the Exposure to a Chemical Ambient in a Process Chamber 审中-公开
标题翻译：改变处理室中暴露于化学环境的过程和系统
公开(公告)号：US20090325386A1
公开(公告)日：2009-12-31
申请号：US12473762
申请日：2009-05-28
申请人： Daniel J. Devine , Rudy Santo Tomas Cardema , Shuen Chun Choy , Carl J. Galewski , Yao Zhi Hu , Bruce W. Peuse , Hung Thanh Phan
发明人： Daniel J. Devine , Rudy Santo Tomas Cardema , Shuen Chun Choy , Carl J. Galewski , Yao Zhi Hu , Bruce W. Peuse , Hung Thanh Phan
IPC分类号： H01L21/465 , C23C16/44 , C23C16/00 , G01F25/00
CPC分类号： C23C16/4412 , C23C16/45557 , H01J37/3244 , H01J37/32449 , H01J37/32834 , H01L21/67017 , H01L21/67253
摘要： A processing system is disclosed for conducting various processes on substrates, such as semiconductor wafers by varying the exposure to a chemical ambient. The processing system includes a processing region having an inlet and an outlet for flowing fluids through the chamber. The outlet is in communication with a conductance valve that is positioned in between the processing region outlet and a vacuum exhaust channel. The conductance valve rapidly oscillates or rotates between open and closed positions for controlling conductance through the processing region. This feature is coupled with the ability to rapidly pulse chemical species through the processing region while simultaneously controlling the pressure in the processing region. Of particular advantage, the conductance valve is capable of transitioning the processing region through pressure transitions of as great as 100:1 while chemical species are flowed through the processing region using equally fast control valves in a synchronous pulsed fashion.
摘要翻译：公开了一种处理系统，用于通过改变对化学环境的暴露来进行诸如半导体晶片的衬底上的各种处理。处理系统包括具有用于使流体流过腔室的入口和出口的处理区域。出口与位于处理区域出口和真空排气通道之间的电导阀连通。电导阀在打开和关闭位置之间快速振荡或旋转，以控制通过处理区域的电导。该特征与通过处理区域快速脉冲化学物质同时控制处理区域中的压力的能力相结合。特别有利的是，电导阀能够通过高达100:1的压力转换使处理区域转变，同时化学物质以同步脉冲的方式使用同等快速的控制阀流过加工区域。

8. 发明授权

US06451713B1 UV pretreatment process for ultra-thin oxynitride formation 失效
标题翻译：用于超薄氧氮化物形成的UV预处理工艺
公开(公告)号：US06451713B1
公开(公告)日：2002-09-17
申请号：US09836620
申请日：2001-04-17
申请人： Sing-Pin Tay , Yao Zhi Hu , Sagy Levy , Jeffrey Gelpey
发明人： Sing-Pin Tay , Yao Zhi Hu , Sagy Levy , Jeffrey Gelpey
IPC分类号： H01L2131
CPC分类号： H01L21/28185 , H01L21/28202 , H01L21/3144 , H01L21/31662 , H01L21/3185 , H01L29/513 , H01L29/518
摘要： The oxynitride or oxide layer formed on a semiconductor substrate is pre-treated with UV-excited gas (such as chlorine or nitrogen) to improve the layer surface condition and increase the density of nucleation sites for subsequent silicon nitride deposition. The pre-treatment is shown to reduce the root mean square surface roughness of thinner silicon nitride films (with physical thicknesses below 36 Å, or even below 20 Å that are deposited on the oxynitride layer by chemical vapor deposition (CVD).
摘要翻译：形成在半导体衬底上的氧氮化物或氧化物层用UV激发气体（如氯或氮）进行预处理，以改善层的表面状态，并提高后续氮化硅沉积的成核位置的密度。预处理显示为减少通过化学气相沉积（CVD）沉积在氮氧化物层上的较薄的氮化硅膜（物理厚度低于或者甚至低于20埃）的均方根表面粗糙度。

9. 发明授权

US06706643B2 UV-enhanced oxy-nitridation of semiconductor substrates 失效
标题翻译：半导体衬底的紫外增强氧氮化
公开(公告)号：US06706643B2
公开(公告)日：2004-03-16
申请号：US10041552
申请日：2002-01-08
申请人： Sing-Pin Tay , Yao Zhi Hu
发明人： Sing-Pin Tay , Yao Zhi Hu
IPC分类号： H01L2131
CPC分类号： H01L21/28202 , H01L21/2686 , H01L29/518
摘要： The oxynitride or oxide layer is formed on a semiconductor substrate by subjecting the substrate to UV radiation while exposed to a gaseous atmosphere of O2 and one or more of N2, N2O, H2 and NH3. Thereafter, a silicon nitride layer is formed according to known 4-step gate stack dielectric processing techniques. Alternatively, a 3-step gate stack process is used, namely following UV-oxidation, a further UV-radiation in NH3 may be applied, followed by a rapid thermal anneal process in an inert ambient. By using UV-oxidation as the first step in either a 4-step or 3-step gate stack process, very thin composite dielectric films with equivalent oxide thickness (EOT) below 16 Å and as low as 14.2 Å can be obtained with significant improvement in leakage current density.
摘要翻译：氮氧化物或氧化物层通过在暴露于O 2和N 2，N 2 O，H 2和NH 3中的一种或多种的气体气氛下对衬底进行UV辐射而形成在半导体衬底上。此后，根据已知的4步栅极叠层电介质处理技术形成氮化硅层。或者，使用三步栅极堆叠工艺，即在UV氧化之后，可以在NH 3中进一步的UV辐射，然后在惰性环境中进行快速热退火工艺。通过使用UV氧化作为第4步或3步栅极叠层工艺中的第一步，可以获得具有低于16埃和低至14.2埃等效氧化物厚度（EOT）的非常薄的复合电介质膜，具有显着的改进在漏电流密度。

10. 发明授权

US06200023B1 Method for determining the temperature in a thermal processing chamber 失效
标题翻译：用于确定热处理室中的温度的方法
公开(公告)号：US06200023B1
公开(公告)日：2001-03-13
申请号：US09270475
申请日：1999-03-15
申请人： Sing Pin Tay , Yao Zhi Hu , Randhir P. S. Thakur
发明人： Sing Pin Tay , Yao Zhi Hu , Randhir P. S. Thakur
IPC分类号： G01K1100
CPC分类号： G01K11/00
摘要： A system and method for determining the temperature of substrates in a thermal processing chamber in the presence of either an oxidizing atmosphere or a reducing atmosphere is disclosed. Specifically, temperature determinations made in accordance with the present invention are generally for calibrating other temperature sensing devices that may be used in conjunction with the thermal processing chamber. The method of the present invention is generally directed to heating a substrate containing a reactive coating within a thermal processing chamber in an oxidizing atmosphere or reducing atmosphere. As the wafer is heated, the reactive coating reacts with gases contained within the chamber based upon the temperature to which the substrate is exposed. After heated, the thickness of any coating that is formed on the substrate is then measured for determining the temperature to which the substrate was heated. This information can then be used to calibrate other temperature sensing devices, such as thermocouples and pyrometers.
摘要翻译：公开了一种用于在存在氧化气氛或还原气氛的情况下确定热处理室中的衬底的温度的系统和方法。具体来说，根据本发明制成的温度通常用于校准可与热处理室结合使用的其它温度感测装置。本发明的方法一般涉及在氧化气氛或还原性气氛中加热在热处理室内含有反应性涂层的基材。当晶片被加热时，反应性涂层基于衬底暴露的温度与包含在腔室内的气体反应。加热后，测量形成在基板上的任何涂层的厚度，以确定衬底被加热到的温度。此信息可用于校准其他温度传感设备，如热电偶和高温计。

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