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1. 发明授权

US07977258B2 Method and system for thermally processing a plurality of wafer-shaped objects 有权
标题翻译：用于热处理多个晶片形物体的方法和系统
公开(公告)号：US07977258B2
公开(公告)日：2011-07-12
申请号：US11784503
申请日：2007-04-06
申请人： Zsolt Nenyei , Paul J. Timans , Wilfried Lerch , Jüergen Niess , Manfred Falter , Patrick Schmid , Conor Patrick O'Carroll , Rudy Cardema , Igor Fidelman , Sing-Pin Tay , Yao Zhi Hu , Daniel J. Devine
发明人： Zsolt Nenyei , Paul J. Timans , Wilfried Lerch , Jüergen Niess , Manfred Falter , Patrick Schmid , Conor Patrick O'Carroll , Rudy Cardema , Igor Fidelman , Sing-Pin Tay , Yao Zhi Hu , Daniel J. Devine
IPC分类号： H01L21/00 , F27B9/14
CPC分类号： H01L21/67115
摘要： Process and system for processing wafer-shaped objects, such as semiconductor wafers is disclosed. In accordance with the present disclosure, a multiple of two wafers are processed in a thermal processing chamber. The thermal processing chamber is in communication with at least one heating device for heating the wafers. The wafers are placed in the thermal processing chamber in a face-to-face configuration or in a back-to-back configuration.
摘要翻译：公开了用于处理诸如半导体晶片的晶片状物体的工艺和系统。根据本公开，在热处理室中处理两个晶片的倍数。热处理室与用于加热晶片的至少一个加热装置连通。将晶片以面对面配置或背对背配置放置在热处理室中。

2. 发明申请

US20080248657A1 Method and system for thermally processing a plurality of wafer-shaped objects 有权
标题翻译：用于热处理多个晶片形物体的方法和系统
公开(公告)号：US20080248657A1
公开(公告)日：2008-10-09
申请号：US11784503
申请日：2007-04-06
申请人： Zsolt Nenyei , Paul J. Timans , Wilfried Lerch , Juergen Niess , Manfred Falter , Patrick Schmid , Conor Patrick O'Carroll , Rudy Cardema , Igor Fidelman , Sing-Pin Tay , Yao Zhi Hu , Daniel J. Devine
发明人： Zsolt Nenyei , Paul J. Timans , Wilfried Lerch , Juergen Niess , Manfred Falter , Patrick Schmid , Conor Patrick O'Carroll , Rudy Cardema , Igor Fidelman , Sing-Pin Tay , Yao Zhi Hu , Daniel J. Devine
IPC分类号： H01L21/00
CPC分类号： H01L21/67115
摘要： Process and system for processing wafer-shaped objects, such as semiconductor wafers is disclosed. In accordance with the present disclosure, a multiple of two wafers are processed in a thermal processing chamber. The thermal processing chamber is in communication with at least one heating device for heating the wafers. The wafers are placed in the thermal processing chamber in a face-to-face configuration or in a back-to-back configuration.
摘要翻译：公开了用于处理诸如半导体晶片的晶片状物体的工艺和系统。根据本公开，在热处理室中处理两个晶片的倍数。热处理室与用于加热晶片的至少一个加热装置连通。将晶片以面对面配置或背对背配置放置在热处理室中。

3. 发明申请

US20100151694A1 METHOD AND APPARATUS FOR GROWING THIN OXIDE FILMS ON SILICON WHILE MINIMIZING IMPACT ON EXISTING STRUCTURES 有权
标题翻译：在最小化现有结构影响下生长硅氧化物薄膜的方法和装置
公开(公告)号：US20100151694A1
公开(公告)日：2010-06-17
申请号：US12334425
申请日：2008-12-12
申请人： Bruce W. Peuse , Yaozhi Hu , Paul Janis Timans , Guangcai Xing , Wilfried Lerch , Sing-Pin Tay , Stephen E. Savas , Georg Roters , Zsolt Nenyei , Ashok Sinha
发明人： Bruce W. Peuse , Yaozhi Hu , Paul Janis Timans , Guangcai Xing , Wilfried Lerch , Sing-Pin Tay , Stephen E. Savas , Georg Roters , Zsolt Nenyei , Ashok Sinha
IPC分类号： H01L21/316 , C23C16/00
CPC分类号： H01L21/31654 , H01L21/0223 , H01L21/02238 , H01L21/02323 , H01L21/0234 , H01L21/67115 , H01L21/67248 , H01L21/68771
摘要： Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.
摘要翻译：描述了等离子体辅助低温自由基氧化。除了被氧化的硅之外，氧化对于可能存在的金属或金属氧化物是选择性的。选择性通过适当选择工艺参数来实现，主要是H2与O2气的比例。可以通过将H 2 O蒸汽注入到等离子体中来扩大工艺窗口，从而可以在相对低的温度下在TiN和W的存在下氧化硅。通过使用具有远离等离子体和流动基团的装置到衬底上但阻止离子到达衬底的装置来改善选择性氧化。

4. 发明授权

US08236706B2 Method and apparatus for growing thin oxide films on silicon while minimizing impact on existing structures 有权
标题翻译：用于在硅上生长薄氧化膜同时最小化对现有结构的影响的方法和装置
公开(公告)号：US08236706B2
公开(公告)日：2012-08-07
申请号：US12334425
申请日：2008-12-12
申请人： Bruce W. Peuse , Yaozhi Hu , Paul Janis Timans , Guangcai Xing , Wilfried Lerch , Sing-Pin Tay , Stephen E. Savas , Georg Roters , Zsolt Nenyei , Ashok Sinha
发明人： Bruce W. Peuse , Yaozhi Hu , Paul Janis Timans , Guangcai Xing , Wilfried Lerch , Sing-Pin Tay , Stephen E. Savas , Georg Roters , Zsolt Nenyei , Ashok Sinha
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/31654 , H01L21/0223 , H01L21/02238 , H01L21/02323 , H01L21/0234 , H01L21/67115 , H01L21/67248 , H01L21/68771
摘要： Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.
摘要翻译：描述了等离子体辅助低温自由基氧化。除了被氧化的硅之外，氧化对于可能存在的金属或金属氧化物是选择性的。选择性通过适当选择工艺参数来实现，主要是H2与O2气的比例。可以通过将H 2 O蒸汽注入到等离子体中来扩大工艺窗口，从而可以在相对低的温度下在TiN和W的存在下氧化硅。通过使用具有远离等离子体和流动基团的装置到衬底上但阻止离子到达衬底的装置来改善选择性氧化。

5. 发明授权

US06706643B2 UV-enhanced oxy-nitridation of semiconductor substrates 失效
标题翻译：半导体衬底的紫外增强氧氮化
公开(公告)号：US06706643B2
公开(公告)日：2004-03-16
申请号：US10041552
申请日：2002-01-08
申请人： Sing-Pin Tay , Yao Zhi Hu
发明人： Sing-Pin Tay , Yao Zhi Hu
IPC分类号： H01L2131
CPC分类号： H01L21/28202 , H01L21/2686 , H01L29/518
摘要： The oxynitride or oxide layer is formed on a semiconductor substrate by subjecting the substrate to UV radiation while exposed to a gaseous atmosphere of O2 and one or more of N2, N2O, H2 and NH3. Thereafter, a silicon nitride layer is formed according to known 4-step gate stack dielectric processing techniques. Alternatively, a 3-step gate stack process is used, namely following UV-oxidation, a further UV-radiation in NH3 may be applied, followed by a rapid thermal anneal process in an inert ambient. By using UV-oxidation as the first step in either a 4-step or 3-step gate stack process, very thin composite dielectric films with equivalent oxide thickness (EOT) below 16 Å and as low as 14.2 Å can be obtained with significant improvement in leakage current density.
摘要翻译：氮氧化物或氧化物层通过在暴露于O 2和N 2，N 2 O，H 2和NH 3中的一种或多种的气体气氛下对衬底进行UV辐射而形成在半导体衬底上。此后，根据已知的4步栅极叠层电介质处理技术形成氮化硅层。或者，使用三步栅极堆叠工艺，即在UV氧化之后，可以在NH 3中进一步的UV辐射，然后在惰性环境中进行快速热退火工艺。通过使用UV氧化作为第4步或3步栅极叠层工艺中的第一步，可以获得具有低于16埃和低至14.2埃等效氧化物厚度（EOT）的非常薄的复合电介质膜，具有显着的改进在漏电流密度。

6. 发明授权

US06451713B1 UV pretreatment process for ultra-thin oxynitride formation 失效
标题翻译：用于超薄氧氮化物形成的UV预处理工艺
公开(公告)号：US06451713B1
公开(公告)日：2002-09-17
申请号：US09836620
申请日：2001-04-17
申请人： Sing-Pin Tay , Yao Zhi Hu , Sagy Levy , Jeffrey Gelpey
发明人： Sing-Pin Tay , Yao Zhi Hu , Sagy Levy , Jeffrey Gelpey
IPC分类号： H01L2131
CPC分类号： H01L21/28185 , H01L21/28202 , H01L21/3144 , H01L21/31662 , H01L21/3185 , H01L29/513 , H01L29/518
摘要： The oxynitride or oxide layer formed on a semiconductor substrate is pre-treated with UV-excited gas (such as chlorine or nitrogen) to improve the layer surface condition and increase the density of nucleation sites for subsequent silicon nitride deposition. The pre-treatment is shown to reduce the root mean square surface roughness of thinner silicon nitride films (with physical thicknesses below 36 Å, or even below 20 Å that are deposited on the oxynitride layer by chemical vapor deposition (CVD).
摘要翻译：形成在半导体衬底上的氧氮化物或氧化物层用UV激发气体（如氯或氮）进行预处理，以改善层的表面状态，并提高后续氮化硅沉积的成核位置的密度。预处理显示为减少通过化学气相沉积（CVD）沉积在氮氧化物层上的较薄的氮化硅膜（物理厚度低于或者甚至低于20埃）的均方根表面粗糙度。

7. 发明授权

US06707011B2 Rapid thermal processing system for integrated circuits 失效
标题翻译：集成电路快速热处理系统
公开(公告)号：US06707011B2
公开(公告)日：2004-03-16
申请号：US10272462
申请日：2002-10-16
申请人： Sing-Pin Tay , Yao Zhi Hu
发明人： Sing-Pin Tay , Yao Zhi Hu
IPC分类号： F27B514
CPC分类号： H01L21/67115 , H05B3/0047
摘要： In a rapid thermal processing system an array of heat lamps generate radiant heat for heating the surfaces of a semiconductor substrate, such as a semiconductor wafer, to a selected temperature or set of temperatures while held within an enclosed chamber. The heat lamps are surrounded by one or more optically transparent enclosures that isolate the heat lamps from the chamber environment and the wafer or wafers therein. The optically transparent enclosures include associated reflectors to direct a higher proportion of emitted radiant heat energy from the lamps toward the semiconductor wafer(s). The lamps with such enclosures are mounted for rotation so that the reflectors may alternately shield all or a portion of emitted lamp radiation from the semiconductor substrate.
摘要翻译：在快速热处理系统中，一组热灯产生辐射热，用于将半导体衬底（例如半导体晶片）的表面加热至选定的温度或一组温度，同时保持在封闭的腔室内。热灯由一个或多个光学透明的外壳围绕，隔离加热灯与腔室环境及其中的晶片或晶片。光学透明的外壳包括相关联的反射器，以将较大比例的发射的辐射热能从灯引向半导体晶片。具有这种外壳的灯被安装以旋转，使得反射器可以交替地屏蔽来自半导体衬底的发射的灯辐射的全部或一部分。

8. 发明授权

US06600138B2 Rapid thermal processing system for integrated circuits 有权
公开(公告)号：US06600138B2
公开(公告)日：2003-07-29
申请号：US09836098
申请日：2001-04-17
申请人： Markus Hauf , Sing-Pin Tay , Yao Zhi Hu
发明人： Markus Hauf , Sing-Pin Tay , Yao Zhi Hu
IPC分类号： F27B514
CPC分类号： H05B3/0047 , H01L21/67115
摘要： In a rapid thermal processing system an array of heat lamps generate radiant heat for heating the surfaces of a semiconductor substrate, such as a semiconductor wafer, to a selected temperature or set of temperatures while held within an enclosed chamber. The heat lamps are surrounded individually or in groups by one or more optically transparent enclosures that isolate the heat lamps from the chamber environment and the wafer or wafers therein. The optically transparent enclosures may include associated reflectors and/or lenses to direct a higher proportion of emitted radiant heat energy from the lamps toward the semiconductor wafer(s). Thin planar quartz liners may also be interposed between the lamps and the substrate. By controlling radiant energy distribution within the chamber, and eliminating thick planar quartz windows commonly used to isolate the lamps in prior art RTP systems, higher processing rates and improved reliability are obtained.

9. 发明授权

US06303524B1 High temperature short time curing of low dielectric constant materials using rapid thermal processing techniques 有权
标题翻译：高温短时间固化低介电常数材料采用快速热处理技术
公开(公告)号：US06303524B1
公开(公告)日：2001-10-16
申请号：US09789062
申请日：2001-02-20
申请人： Rahul Sharangpani , Sing-Pin Tay
发明人： Rahul Sharangpani , Sing-Pin Tay
IPC分类号： H01L2131
CPC分类号： H01L21/02118 , H01L21/02282 , H01L21/31058 , H01L21/312 , H01L21/3122 , H01L21/3124 , H01L21/3127
摘要： A method for curing low k dielectric materials uses very short, relatively high temperature cycles instead of the conventionally used (lower temperature/longer time) thermal cycles. A substrate, such as a semiconductor wafer, coated with a layer of coating material is heated to an elevated temperature at a heating rate of greater than about 20° C. per second. Once the coating material has been converted to a low dielectric constant material with desired properties, the coated substrate is cooled. Alternatively, spike heating raises and promptly lowers the temperature of the coated substrate to effect curing in one or a series of spike heating steps. The method allows for a thinner refractory barrier metal layer thickness to prevent copper diffusion, and uses shorter curing times resulting in higher throughput.
摘要翻译：用于固化低k电介质材料的方法使用非常短的相对高的温度循环，而不是常规使用的（较低温度/较长时间）的热循环。涂覆有涂层材料层的衬底（例如半导体晶片）以大于约20℃/秒的加热速率被加热到升高的温度。一旦将涂料转化为具有所需性能的低介电常数材料，则将涂覆的基材冷却。或者，尖峰加热升高并且迅速降低涂覆的基底的温度以在一个或一系列尖峰加热步骤中实现固化。该方法允许更薄的难熔阻挡金属层厚度以防止铜扩散，并且使用较短的固化时间导致较高的生产量。

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