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1. 发明申请

US20080248657A1 Method and system for thermally processing a plurality of wafer-shaped objects 有权
标题翻译：用于热处理多个晶片形物体的方法和系统
公开(公告)号：US20080248657A1
公开(公告)日：2008-10-09
申请号：US11784503
申请日：2007-04-06
申请人： Zsolt Nenyei , Paul J. Timans , Wilfried Lerch , Juergen Niess , Manfred Falter , Patrick Schmid , Conor Patrick O'Carroll , Rudy Cardema , Igor Fidelman , Sing-Pin Tay , Yao Zhi Hu , Daniel J. Devine
发明人： Zsolt Nenyei , Paul J. Timans , Wilfried Lerch , Juergen Niess , Manfred Falter , Patrick Schmid , Conor Patrick O'Carroll , Rudy Cardema , Igor Fidelman , Sing-Pin Tay , Yao Zhi Hu , Daniel J. Devine
IPC分类号： H01L21/00
CPC分类号： H01L21/67115
摘要： Process and system for processing wafer-shaped objects, such as semiconductor wafers is disclosed. In accordance with the present disclosure, a multiple of two wafers are processed in a thermal processing chamber. The thermal processing chamber is in communication with at least one heating device for heating the wafers. The wafers are placed in the thermal processing chamber in a face-to-face configuration or in a back-to-back configuration.
摘要翻译：公开了用于处理诸如半导体晶片的晶片状物体的工艺和系统。根据本公开，在热处理室中处理两个晶片的倍数。热处理室与用于加热晶片的至少一个加热装置连通。将晶片以面对面配置或背对背配置放置在热处理室中。

2. 发明授权

US07977258B2 Method and system for thermally processing a plurality of wafer-shaped objects 有权
标题翻译：用于热处理多个晶片形物体的方法和系统
公开(公告)号：US07977258B2
公开(公告)日：2011-07-12
申请号：US11784503
申请日：2007-04-06
申请人： Zsolt Nenyei , Paul J. Timans , Wilfried Lerch , Jüergen Niess , Manfred Falter , Patrick Schmid , Conor Patrick O'Carroll , Rudy Cardema , Igor Fidelman , Sing-Pin Tay , Yao Zhi Hu , Daniel J. Devine
发明人： Zsolt Nenyei , Paul J. Timans , Wilfried Lerch , Jüergen Niess , Manfred Falter , Patrick Schmid , Conor Patrick O'Carroll , Rudy Cardema , Igor Fidelman , Sing-Pin Tay , Yao Zhi Hu , Daniel J. Devine
IPC分类号： H01L21/00 , F27B9/14
CPC分类号： H01L21/67115
摘要： Process and system for processing wafer-shaped objects, such as semiconductor wafers is disclosed. In accordance with the present disclosure, a multiple of two wafers are processed in a thermal processing chamber. The thermal processing chamber is in communication with at least one heating device for heating the wafers. The wafers are placed in the thermal processing chamber in a face-to-face configuration or in a back-to-back configuration.
摘要翻译：公开了用于处理诸如半导体晶片的晶片状物体的工艺和系统。根据本公开，在热处理室中处理两个晶片的倍数。热处理室与用于加热晶片的至少一个加热装置连通。将晶片以面对面配置或背对背配置放置在热处理室中。

3. 发明授权

US07704898B2 Method for the thermal treatment of disk-shaped substrates 有权
标题翻译：盘状基板的热处理方法
公开(公告)号：US07704898B2
公开(公告)日：2010-04-27
申请号：US11659587
申请日：2004-10-28
申请人： Zsolt Nenyei , Steffen Frigge , Patrick Schmid , Thorsten Hülsmann , Thomas Theiler
发明人： Zsolt Nenyei , Steffen Frigge , Patrick Schmid , Thorsten Hülsmann , Thomas Theiler
IPC分类号： H01L21/00
CPC分类号： H01L21/324 , F27B5/04 , F27B17/0025 , H01L21/67115
摘要： Disclosed is an apparatus and a method for reducing flash in an injection mold (532 or 542,543) which molds a molded article between a first mold surface and a second mold surface. The apparatus includes an active material actuator (530 or 533a and 533b or 561a and 561b) configured to, in response to application or removal of an electrical actuation signal thereto, change dimension and urge the first mold surface relative to the second mold surface to reduce flash therebetween. The apparatus also includes a transmission structure (533) configured to provide in use, the electrical actuation signal to said active material actuator (530 or 533a and 533b or 561a and 561b) includes a set of active material actuators stacked one against the other to provide a varying sealing force to urge the first mold surface relative to the second mold surface.
摘要翻译：公开了一种用于减少在第一模具表面和第二模具表面之间模制模制品的注模（532或542,543）中的闪光的装置和方法。该装置包括被配置为响应于施加或去除电致动信号而改变尺寸并且相对于第二模具表面推动第一模具表面以减少第一模具表面的活性材料致动器（530或533a和533b或561a和561b）闪烁。该设备还包括被配置为在使用中提供到所述活性材料致动器（530或533a和533b或561a和561b）的电致动信号的传输结构（533）包括一组彼此堆叠的活性材料致动器，以提供不同的密封力以相对于第二模具表面推动第一模具表面。

4. 发明申请

US20080311761A1 Method for the Thermal Treatment of Disk-Shaped Substrates 有权
标题翻译：盘形基板的热处理方法
公开(公告)号：US20080311761A1
公开(公告)日：2008-12-18
申请号：US11659587
申请日：2004-10-28
申请人： Zsolt Nenyei , Steffen Frigge , Patrick Schmid , Thorsten Hulsmann , Thomas Theiler
发明人： Zsolt Nenyei , Steffen Frigge , Patrick Schmid , Thorsten Hulsmann , Thomas Theiler
IPC分类号： H01L21/00
CPC分类号： H01L21/324 , F27B5/04 , F27B17/0025 , H01L21/67115
摘要： Disclosed is an apparatus and a method for reducing flash in an injection mold (532 or 542, 543) which molds a molded article between a first mold surface and a second mold surface. The apparatus includes an active material actuator (530 or 533a and 533b or 561a and 561b) configured to, in response to application or removal of an electrical actuation signal thereto, change dimension and urge the first mold surface relative to the second mold surface to reduce flash therebetween. The apparatus also includes a transmission structure (533) configured to provide in use, the electrical acutation signal to said active material actuator (530 or 533a and 533b or 561a and 561b) includes a set of active material actuators stacked one against the other to provide a varying sealing force to urge the first mold surface relative to the second mold surface.
摘要翻译：公开了一种用于减少在第一模具表面和第二模具表面之间模制模制品的注塑模具中的闪光的装置和方法（532或542,543）。该装置包括被配置为响应于施加或去除电致动信号而改变尺寸并且相对于第二模具表面推动第一模具表面以减少第一模具表面的活性材料致动器（530或533a和533b或561a和561b）闪烁。所述装置还包括被配置为在使用中提供到所述活性材料致动器（530或533a和533b或561a和561b）的电响应信号的传输结构（533）包括一组彼此堆叠的一组活性材料致动器，以提供不同的密封力以相对于第二模具表面推动第一模具表面。

5. 发明授权

US06953338B2 Device for thermal treatment of substrates 有权
标题翻译：基板热处理装置
公开(公告)号：US06953338B2
公开(公告)日：2005-10-11
申请号：US10182594
申请日：2001-01-19
申请人： Uwe Kreiser , Karsten Weber , Wilfried Lerch , Michael Grandy , Patrick Schmid , Jürgen Niess , Olgun Altug
发明人： Uwe Kreiser , Karsten Weber , Wilfried Lerch , Michael Grandy , Patrick Schmid , Jürgen Niess , Olgun Altug
IPC分类号： H01L21/683 , H01L21/00 , H01L21/324 , H01L21/687 , F27D5/00
CPC分类号： H01L21/68742 , H01L21/67115 , H01L21/6875 , H01L21/68785
摘要： The aim of the invention is to reduce the formation of scratches in a device for the thermal treatment of substrates, in particular, semiconductor substrates, in a chamber in which the substrate is placed upon support elements. According to the invention, said aim is achieved by means of displaceable support elements.
摘要翻译：本发明的目的是减少在基板被放置在支撑元件上的室中用于热处理基板，特别是半导体基板的装置中的划痕的形成。根据本发明，所述目的通过可移位的支撑元件来实现。

6. 发明申请

US20070098904A1 Device and method for the reduction of particles in the thermal treatment of rotating substrates 审中-公开
标题翻译：用于在旋转基板的热处理中减少颗粒的装置和方法
公开(公告)号：US20070098904A1
公开(公告)日：2007-05-03
申请号：US11440796
申请日：2006-05-25
申请人： Helmut Aschner , Patrick Schmid , Thomas Theiler , Ottmar Heudorfer , Karsten Weber , Conor O'Carroll
发明人： Helmut Aschner , Patrick Schmid , Thomas Theiler , Ottmar Heudorfer , Karsten Weber , Conor O'Carroll
IPC分类号： B05D3/02 , H01L21/00
CPC分类号： H01L21/67115 , F27B5/04 , F27B17/0025 , F27D5/0037 , H01L21/324 , H01L21/6719 , H01L21/68792
摘要： A device and a method for reducing particle exposure to substrates during thermal treatment are disclosed. Semiconductor wafers may be rotated on a device within a process chamber divided into two partial chambers such that a first partial chamber contains the substrate to be thermally treated and a second partial chamber contains at least parts of the rotation device. Between the partial chambers, a flow of gas is set such that gas from the second partial chamber is substantially prevented from passing into the first partial chamber. In this way, particles which are produced by rotation abrasion in the second partial chamber are largely prevented from passing onto the substrate to be thermally treated. This device and this method are particularly advantageous if the rotation is realized by means of a gas drive, wherein the gas used for the rotation can be introduced directly into the second partial chamber.
摘要翻译：公开了一种用于在热处理期间减少颗粒暴露于基板的装置和方法。半导体晶片可以在分成两个部分室的处理室内的装置上旋转，使得第一部分室包含待热处理的基板，并且第二部分室至少包含旋转装置的一部分。在部分室之间，设置气流，使得基本上防止来自第二部分室的气体进入第一部分室。以这种方式，通过第二部分室中的旋转磨损产生的颗粒被大大地防止被传递到待热处理的基板上。如果通过气体驱动实现旋转，则该装置和该方法是特别有利的，其中用于旋转的气体可以直接引入第二部分室。

7. 发明申请

US20090217875A1 APPARATUS FOR THE HEAT TREATMENT OF DISC SHAPED SUBSTRATES 有权
标题翻译：用于处理盘形基板的装置
公开(公告)号：US20090217875A1
公开(公告)日：2009-09-03
申请号：US12395763
申请日：2009-03-02
申请人： Waltraud Dietl , Patrick Schmid , Eddy Jager
发明人： Waltraud Dietl , Patrick Schmid , Eddy Jager
IPC分类号： B05C9/14
CPC分类号： H01L21/67115 , H01L21/67017
摘要： The application relates to an apparatus for the heat treatment of disc shaped substrates, in particular semi-conductor wafers. The apparatus has at least one radiation source and a treatment chamber accommodating the substrate having an upper wall element and a lower wall element, at least one of the wall elements lying adjacent to the at least one radiation source and being substantially transparent for the radiation from the radiation source. Furthermore, the apparatus makes provision for at least a first gas inlet apparatus. The first gas inlet apparatus has a plate element which is disposed within the treatment chamber between the substrate and the upper wall element, a collar ring disposed between the plate element and the upper wall element, and a first gas conveyance duct extending at least partially within the treatment chamber. The plate element has a larger diameter than the substrate and in a hole region approximately corresponding to the diameter of the substrate a plurality of through holes. The collar ring surrounds the hole region and has at least one inlet opening. The first gas conveyance duct has an outlet which is aligned with the inlet opening of the collar ring, a gas flow flowing out of the outlet having a main flow direction which is directed past a centre point of the collar ring.
摘要翻译：本申请涉及用于盘形基底，特别是半导体晶片的热处理的装置。该装置具有至少一个辐射源和处理室，其容纳具有上壁元件和下壁元件的基底，所述壁元件中的至少一个与所述至少一个辐射源相邻并且对于辐射来说基本上是透明的辐射源。此外，该装置至少设置有第一气体入口装置。第一气体入口装置具有设置在基板和上壁元件之间的处理室内的板元件，设置在板元件和上壁元件之间的套环，以及至少部分地延伸到第一气体输送管道治疗室。板元件具有比基板更大的直径，并且在大致对应于基板的直径的孔区域中具有多个通孔。轴环围绕孔区域并且具有至少一个入口开口。第一气体输送管道具有与套环的入口开口对准的出口，从出口流出的气流具有被引导通过套环的中心点的主流动方向。

8. 发明授权

US06752625B1 Method and apparatus device for the heat treatment of substrates 有权
标题翻译：用于基材热处理的方法和装置
公开(公告)号：US06752625B1
公开(公告)日：2004-06-22
申请号：US09700577
申请日：2000-11-13
申请人： Helmut Aschner , Patrick Schmid , Dieter Zernickel
发明人： Helmut Aschner , Patrick Schmid , Dieter Zernickel
IPC分类号： F27D500
CPC分类号： H01L21/67115
摘要： The invention relates to a device and a method for the heat treatment of substrates, especially semiconductor wafers. The device comprises a reaction chamber with a compensation element. According to the invention the substrate can be inserted and withdrawn again more easily by the fact that the compensation element (15) can be at least partly lowered and/or raised in the reaction chamber.
摘要翻译：本发明涉及一种用于基板，特别是半导体晶片的热处理的装置和方法。该装置包括具有补偿元件的反应室。根据本发明，通过补偿元件（15）可以在反应室中至少部分地降低和/或升高的事实，可以更容易地将衬底插入和抽出。

9. 发明授权

US09111970B2 Apparatus for the heat treatment of disc shaped substrates 有权
标题翻译：用于盘形基底的热处理的装置
公开(公告)号：US09111970B2
公开(公告)日：2015-08-18
申请号：US12395763
申请日：2009-03-02
申请人： Waltraud Dietl , Patrick Schmid , Eddy Jager
发明人： Waltraud Dietl , Patrick Schmid , Eddy Jager
IPC分类号： B05C9/14 , H01L21/67
CPC分类号： H01L21/67115 , H01L21/67017
摘要： The application relates to an apparatus for the heat treatment of disc shaped substrates, in particular semi-conductor wafers. The apparatus has at least one radiation source and a treatment chamber accommodating the substrate having an upper wall element and a lower wall element, at least one of the wall elements lying adjacent to the at least one radiation source and being substantially transparent for the radiation from the radiation source. Furthermore, the apparatus makes provision for at least a first gas inlet apparatus. The first gas inlet apparatus has a plate element which is disposed within the treatment chamber between the substrate and the upper wall element, a collar ring disposed between the plate element and the upper wall element, and a first gas conveyance duct extending at least partially within the treatment chamber. The plate element has a larger diameter than the substrate and in a hole region approximately corresponding to the diameter of the substrate a plurality of through holes. The collar ring surrounds the hole region and has at least one inlet opening. The first gas conveyance duct has an outlet which is aligned with the inlet opening of the collar ring, a gas flow flowing out of the outlet having a main flow direction which is directed past a centre point of the collar ring.
摘要翻译：本申请涉及用于盘形基底，特别是半导体晶片的热处理的装置。该装置具有至少一个辐射源和处理室，其容纳具有上壁元件和下壁元件的基底，所述壁元件中的至少一个与所述至少一个辐射源相邻并且对于辐射来说基本上是透明的辐射源。此外，该装置至少设置有第一气体入口装置。第一气体入口装置具有设置在基板和上壁元件之间的处理室内的板元件，设置在板元件和上壁元件之间的套环，以及至少部分地延伸到第一气体输送管道治疗室。板元件具有比基板更大的直径，并且在大致对应于基板的直径的孔区域中具有多个通孔。轴环围绕孔区域并且具有至少一个入口开口。第一气体输送管道具有与套环的入口开口对准的出口，从出口流出的气流具有被引导通过套环的中心点的主流动方向。

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