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1. 发明授权

US08557721B2 Rapid thermal processing using energy transfer layers 有权
标题翻译：使用能量转移层的快速热处理
公开(公告)号：US08557721B2
公开(公告)日：2013-10-15
申请号：US13372082
申请日：2012-02-13
申请人： Paul J. Timans
发明人： Paul J. Timans
IPC分类号： H01L21/00
CPC分类号： H01L21/67115
摘要： A method that is performed for heat treating a semiconductor wafer in a process chamber, as an intermediate part of an overall multi-step technique for processing the wafer, includes applying an energy transfer layer to at least a portion of the wafer, and exposing the wafer to an energy source in the process chamber in a way which subjects the wafer to a thermal profile such that the energy transfer layer influences at least one part of the thermal profile. The thermal profile has at least a first elevated temperature event. The method further includes, in time relation to the thermal profile, removing the energy transfer layer in the process chamber at least sufficiently for subjecting the wafer to a subsequent step. An associated intermediate condition of the wafer is described.
摘要翻译：执行用于对处理室中的半导体晶片进行热处理的方法，作为用于处理晶片的整体多步骤技术的中间部分，包括将能量转移层施加到晶片的至少一部分，并将晶片以处理室中的能量源的方式使晶片处于热分布，使得能量传递层影响热分布的至少一部分。热分布至少具有第一个升温事件。该方法还包括在时间上与热分布的关系，去除处理室中的能量转移层至少足以使晶片经历后续步骤。描述了晶片的相关中间状态。

2. 发明申请

US20100219174A1 Selective Reflectivity Process Chamber with Customized Wavelength Response and Method 有权
标题翻译：具有定制波长响应和方法的选择性反射过程室
公开(公告)号：US20100219174A1
公开(公告)日：2010-09-02
申请号：US12776845
申请日：2010-05-10
申请人： Paul J. Timans , Daniel J. Devine , Young Jai Lee , Yao Zhi Hu , Peter C. Bordiga
发明人： Paul J. Timans , Daniel J. Devine , Young Jai Lee , Yao Zhi Hu , Peter C. Bordiga
IPC分类号： F27D11/00
CPC分类号： H01L21/67115 , F27B17/0025
摘要： A customizable chamber spectral response is described which can be used at least to tailor chamber performance for wafer heating, wafer cooling, temperature measurement, and stray light. In one aspect, a system is described for processing a treatment object having a given emission spectrum at a treatment object temperature which causes the treatment object to produce a treatment object radiated energy. The chamber responds in a first way to the heating arrangement radiated energy and in a second way to the treatment object radiated energy that is incident thereon. The chamber may respond in the first way by reflecting the majority of the heat source radiated energy and in the second way by absorbing the majority of the treatment object radiated energy. Different portions of the chamber may be treated with selectively reflectivity based on design considerations to achieve objectives with respect to a particular chamber performance parameter.
摘要翻译：描述了可定制的室光谱响应，其可以至少用于定制晶片加热，晶片冷却，温度测量和杂散光的室性能。在一个方面，描述了一种系统，用于处理在处理对象温度下具有给定发射光谱的治疗对象，其使得治疗对象产生治疗对象的辐射能。室以第一种方式响应于加热装置的辐射能量，并以第二种方式响应入射在其上的处理对象辐射能。通过反映大部分热源辐射能量，腔室可以以第一种方式作出反应，并且以第二种方式吸收大部分治疗对象的辐射能量。可以基于设计考虑来选择反射率来处理室的不同部分，以实现关于特定室性能参数的目标。

3. 发明申请

US20120208377A1 RAPID THERMAL PROCESSING USING ENERGY TRANSFER LAYERS 有权
标题翻译：使用能量转移层快速热处理
公开(公告)号：US20120208377A1
公开(公告)日：2012-08-16
申请号：US13372082
申请日：2012-02-13
申请人： Paul J. Timans
发明人： Paul J. Timans
IPC分类号： H01L21/263
CPC分类号： H01L21/67115
摘要： A method that is performed for heat treating a semiconductor wafer in a process chamber, as an intermediate part of an overall multi-step technique for processing the wafer, includes applying an energy transfer layer to at least a portion of the wafer, and exposing the wafer to an energy source in the process chamber in a way which subjects the wafer to a thermal profile such that the energy transfer layer influences at least one part of the thermal profile. The thermal profile has at least a first elevated temperature event. The method further includes, in time relation to the thermal profile, removing the energy transfer layer in the process chamber at least sufficiently for subjecting the wafer to a subsequent step. An associated intermediate condition of the wafer is described.
摘要翻译：执行用于对处理室中的半导体晶片进行热处理的方法，作为用于处理晶片的整体多步骤技术的中间部分，包括将能量转移层施加到晶片的至少一部分，并将晶片以处理室中的能量源的方式使晶片处于热分布，使得能量传递层影响热分布的至少一部分。热分布至少具有第一个升温事件。该方法还包括在时间上与热分布的关系，去除处理室中的能量转移层至少足以使晶片经历后续步骤。描述了晶片的相关中间状态。

4. 发明授权

US06951996B2 Pulsed processing semiconductor heating methods using combinations of heating sources 有权
标题翻译：脉冲处理半导体加热方法采用加热源组合
公开(公告)号：US06951996B2
公开(公告)日：2005-10-04
申请号：US10747592
申请日：2003-12-29
申请人： Paul J. Timans , Narasimha Acharya
发明人： Paul J. Timans , Narasimha Acharya
IPC分类号： H05B3/00 , C30B31/12 , F27D11/02 , H01L21/00 , H01L21/26 , H01L21/268 , H05B1/02 , H05B3/68 , F27B5/14
CPC分类号： H01L21/67248 , C30B31/12 , H01L21/67115 , Y10S438/928
摘要： Pulsed processing methods and systems for heating objects such as semiconductor substrates feature process control for multi-pulse processing of a single substrate, or single or multi-pulse processing of different substrates having different physical properties. Heat is applied a controllable way to the object during a background heating mode, thereby selectively heating the object to at least generally produce a temperature rise throughout the object during background heating. A first surface of the object is heated in a pulsed heating mode by subjecting it to at least a first pulse of energy. Background heating is controlled in timed relation to the first pulse. A first temperature response of the object to the first energy pulse may be sensed and used to establish at least a second set of pulse parameters for at least a second energy pulse to at least partially produce a target condition.
摘要翻译：用于加热诸如半导体衬底的物体的脉冲处理方法和系统具有用于单个衬底的多脉冲处理的过程控制，或者具有不同物理性质的不同衬底的单脉冲或多脉冲处理。在背景加热模式期间，热量以可控的方式施加到物体，由此在背景加热期间选择性地加热物体以至少大体上产生整个物体的温度升高。物体的第一表面以脉冲加热模式被加热至少经受第一脉冲能量。背景加热以与第一脉冲的定时关系来控制。物体对第一能量脉冲的第一温度响应可以被感测并用于建立用于至少第二能量脉冲至少部分地产生目标条件的至少第二组脉冲参数。

5. 发明授权

US09633876B2 Selective reflectivity process chamber with customized wavelength response and method 有权
公开(公告)号：US09633876B2
公开(公告)日：2017-04-25
申请号：US12776845
申请日：2010-05-10
申请人： Paul J. Timans , Daniel J. Devine , Young Jai Lee , Yao Zhi Hu , Peter C. Bordiga
发明人： Paul J. Timans , Daniel J. Devine , Young Jai Lee , Yao Zhi Hu , Peter C. Bordiga
IPC分类号： F27D11/00 , H01L21/67 , F27B17/00
CPC分类号： H01L21/67115 , F27B17/0025
摘要： A customizable chamber spectral response is described which can be used at least to tailor chamber performance for wafer heating, wafer cooling, temperature measurement, and stray light. In one aspect, a system is described for processing a treatment object having a given emission spectrum at a treatment object temperature which causes the treatment object to produce a treatment object radiated energy. The chamber responds in a first way to the heating arrangement radiated energy and in a second way to the treatment object radiated energy that is incident thereon. The chamber may respond in the first way by reflecting the majority of the heat source radiated energy and in the second way by absorbing the majority of the treatment object radiated energy. Different portions of the chamber may be treated with selectively reflectivity based on design considerations to achieve objectives with respect to a particular chamber performance parameter.

6. 发明授权

US07642205B2 Rapid thermal processing using energy transfer layers 有权
标题翻译：使用能量转移层的快速热处理
公开(公告)号：US07642205B2
公开(公告)日：2010-01-05
申请号：US11102496
申请日：2005-04-08
申请人： Paul J. Timans
发明人： Paul J. Timans
IPC分类号： H01L21/00
CPC分类号： H01L21/67115
摘要： A method that is performed for heat treating a semiconductor wafer in a process chamber, as an intermediate part of an overall multi-step technique for processing the wafer, includes applying an energy transfer layer to at least a portion of the wafer, and exposing the wafer to an energy source in the process chamber in a way which subjects the wafer to a thermal profile such that the energy transfer layer influences at least one part of the thermal profile. The thermal profile has at least a first elevated temperature event. The method further includes, in time relation to the thermal profile, removing the energy transfer layer in the process chamber at least sufficiently for subjecting the wafer to a subsequent step. An associated intermediate condition of the wafer is described.
摘要翻译：执行用于对处理室中的半导体晶片进行热处理的方法，作为用于处理晶片的整体多步骤技术的中间部分，包括将能量转移层施加到晶片的至少一部分，并将晶片以处理室中的能量源的方式使晶片处于热分布，使得能量传递层影响热分布的至少一部分。热分布至少具有第一个升温事件。该方法还包括在时间上与热分布的关系，去除处理室中的能量转移层至少足以使晶片经历后续步骤。描述了晶片的相关中间状态。

7. 发明授权

US08837923B2 Pulsed processing semiconductor heating methods using combinations of heating sources 有权
标题翻译：脉冲处理半导体加热方法采用加热源组合
公开(公告)号：US08837923B2
公开(公告)日：2014-09-16
申请号：US13158634
申请日：2011-06-13
申请人： Paul J. Timans , Narasimha Acharya
发明人： Paul J. Timans , Narasimha Acharya
IPC分类号： F26B3/30 , F27B5/14
CPC分类号： H01L21/67248 , C30B31/12 , H01L21/67115 , Y10S438/928
摘要： Pulsed processing methods and systems for heating objects such as semiconductor substrates feature process control for multi-pulse processing of a single substrate, or single or multi-pulse processing of different substrates having different physical properties. Heat is applied a controllable way to the object during a background heating mode, thereby selectively heating the object to at least generally produce a temperature rise throughout the object during background heating. A first surface of the object is heated in a pulsed heating mode by subjecting it to at least a first pulse of energy. Background heating is controlled in timed relation to the first pulse. A first temperature response of the object to the first energy pulse may be sensed and used to establish at least a second set of pulse parameters for at least a second energy pulse to at least partially produce a target condition.
摘要翻译：用于加热诸如半导体衬底的物体的脉冲处理方法和系统具有用于单个衬底的多脉冲处理的过程控制，或者具有不同物理性质的不同衬底的单脉冲或多脉冲处理。在背景加热模式期间，热量以可控的方式施加到物体，由此在背景加热期间选择性地加热物体以至少大体上产生整个物体的温度升高。物体的第一表面以脉冲加热模式被加热至少经受第一脉冲能量。背景加热以与第一脉冲的定时关系来控制。物体对第一能量脉冲的第一温度响应可以被感测并用于建立用于至少第二能量脉冲至少部分地产生目标条件的至少第二组脉冲参数。

8. 发明授权

US08138105B2 Rapid thermal processing using energy transfer layers 有权
标题翻译：使用能量转移层的快速热处理
公开(公告)号：US08138105B2
公开(公告)日：2012-03-20
申请号：US12631821
申请日：2009-12-05
申请人： Paul J. Timans
发明人： Paul J. Timans
IPC分类号： H01L21/00
CPC分类号： H01L21/67115
摘要： A method that is performed for heat treating a semiconductor wafer in a process chamber, as an intermediate part of an overall multi-step technique for processing the wafer, includes applying an energy transfer layer to at least a portion of the wafer, and exposing the wafer to an energy source in the process chamber in a way which subjects the wafer to a thermal profile such that the energy transfer layer influences at least one part of the thermal profile. The thermal profile has at least a first elevated temperature event. The method further includes, in time relation to the thermal profile, removing the energy transfer layer in the process chamber at least sufficiently for subjecting the wafer to a subsequent step. An associated intermediate condition of the wafer is described.
摘要翻译：执行用于对处理室中的半导体晶片进行热处理的方法，作为用于处理晶片的整体多步骤技术的中间部分，包括将能量转移层施加到晶片的至少一部分，并将晶片以处理室中的能量源的方式使晶片处于热分布，使得能量传递层影响热分布的至少一部分。热分布至少具有第一个升温事件。该方法还包括在时间上与热分布的关系，去除处理室中的能量转移层至少足以使晶片经历后续步骤。描述了晶片的相关中间状态。

9. 发明授权

US07737385B2 Selective reflectivity process chamber with customized wavelength response and method 有权
标题翻译：选择性反射处理室，具有定制的波长响应和方法
公开(公告)号：US07737385B2
公开(公告)日：2010-06-15
申请号：US11506174
申请日：2006-08-16
申请人： Paul J. Timans , Daniel J. Devine , Young Jai Lee , Yao Zhi Hu , Peter C. Bordiga
发明人： Paul J. Timans , Daniel J. Devine , Young Jai Lee , Yao Zhi Hu , Peter C. Bordiga
IPC分类号： F27B5/14 , F26B19/00
CPC分类号： H01L21/67115 , F27B17/0025
摘要： A customizable chamber spectral response is described which can be used at least to tailor chamber performance for wafer heating, wafer cooling, temperature measurement, and stray light. In one aspect, a system is described for processing a treatment object having a given emission spectrum at a treatment object temperature which causes the treatment object to produce a treatment object radiated energy. The chamber responds in a first way to the heating arrangement radiated energy and in a second way to the treatment object radiated energy that is incident thereon. The chamber may respond in the first way by reflecting the majority of the heat source radiated energy and in the second way by absorbing the majority of the treatment object radiated energy. Different portions of the chamber may be treated with selectively reflectivity based on design considerations to achieve objectives with respect to a particular chamber performance parameter.
摘要翻译：描述了可定制的室光谱响应，其可以至少用于定制晶片加热，晶片冷却，温度测量和杂散光的室性能。在一个方面，描述了一种系统，用于处理在处理对象温度下具有给定发射光谱的治疗对象，其使得治疗对象产生治疗对象的辐射能。腔室以第一种方式响应于加热装置的辐射能量，并以第二种方式响应入射在其上的治疗对象辐射能。通过反映大部分热源辐射能量，腔室可以以第一种方式作出反应，并且以第二种方式吸收大部分治疗对象的辐射能量。可以基于设计考虑来选择反射率来处理室的不同部分，以实现关于特定室性能参数的目标。

10. 发明申请

US20100099268A1 Rapid Thermal Processing using Energy Transfer Layers 有权
标题翻译：使用能量转移层的快速热处理
公开(公告)号：US20100099268A1
公开(公告)日：2010-04-22
申请号：US12631821
申请日：2009-12-05
申请人： Paul J. Timans
发明人： Paul J. Timans
IPC分类号： H01L21/321 , H01L21/268
CPC分类号： H01L21/67115
摘要： A method that is performed for heat treating a semiconductor wafer in a process chamber, as an intermediate part of an overall multi-step technique for processing the wafer, includes applying an energy transfer layer to at least a portion of the wafer, and exposing the wafer to an energy source in the process chamber in a way which subjects the wafer to a thermal profile such that the energy transfer layer influences at least one part of the thermal profile. The thermal profile has at least a first elevated temperature event. The method further includes, in time relation to the thermal profile, removing the energy transfer layer in the process chamber at least sufficiently for subjecting the wafer to a subsequent step. An associated intermediate condition of the wafer is described.
摘要翻译：执行用于对处理室中的半导体晶片进行热处理的方法，作为用于处理晶片的整体多步骤技术的中间部分，包括将能量转移层施加到晶片的至少一部分，并将晶片以处理室中的能量源的方式使晶片处于热分布，使得能量传递层影响热分布的至少一部分。热分布至少具有第一个升温事件。该方法还包括在时间上与热分布的关系，去除处理室中的能量转移层至少足以使晶片经历后续步骤。描述了晶片的相关中间状态。

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