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1. 发明授权

US5872058A High aspect ratio gapfill process by using HDP 失效
标题翻译：使用HDP的高纵横比gapfill工艺
公开(公告)号：US5872058A
公开(公告)日：1999-02-16
申请号：US876949
申请日：1997-06-17
申请人： Patrick A. Van Cleemput , Thomas W. Mountsier
发明人： Patrick A. Van Cleemput , Thomas W. Mountsier
IPC分类号： C23C16/04 , C23C16/40 , H01L21/316 , H01L21/762 , H01L21/768 , H01L71/302
CPC分类号： C23C16/402 , C23C16/045 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/31612 , H01L21/76224 , H01L21/76837
摘要： A process for filling high aspect ratio gaps on substrates uses conventional high density plasma deposition processes while reducing the concentration of the inert gas, such as Ar, to 0-13% of the total process gas flow. By reducing the inert gas concentration, sputtering or etching is reduced, resulting in reduced sidewall deposition from the sputtered material. Consequently, gaps with aspect ratios of 3.0:1 and higher can be filled without the formation of voids and without damaging circuit elements.
摘要翻译：用于在衬底上填充高纵横比间隙的方法使用常规的高密度等离子体沉积工艺，同时将诸如Ar的惰性气体的浓度降低到总工艺气体流量的0-13％。通过降低惰性气体浓度，溅射或蚀刻减少，导致来自溅射材料的侧壁沉积减少。因此，可以在不形成空隙并且不损坏电路元件的情况下填充纵横比为3.0:1或更高的间隙。

2. 发明授权

US07208389B1 Method of porogen removal from porous low-k films using UV radiation 失效
标题翻译：使用紫外线辐射从多孔低k膜去除致孔剂的方法
公开(公告)号：US07208389B1
公开(公告)日：2007-04-24
申请号：US10672311
申请日：2003-09-26
申请人： Adrianne K. Tipton , Brian G. Lu , Patrick A. Van Cleemput , Michelle T. Schulberg , Qingguo Wu , Haiying Fu , Feng Wang
发明人： Adrianne K. Tipton , Brian G. Lu , Patrick A. Van Cleemput , Michelle T. Schulberg , Qingguo Wu , Haiying Fu , Feng Wang
IPC分类号： H01L21/76
CPC分类号： H01L21/31695 , H01L21/02126 , H01L21/02203 , H01L21/02274 , H01L21/02348
摘要： Methods of preparing a porous low-k dielectric material on a substrate are provided. The methods involve the use of ultraviolet radiation to react with and remove porogen from a porogen containing precursor film, leaving a porous low-k dielectric matrix. Methods using oxidative conditions and non-oxidative conditions are described. The methods described may be used to remove porogen from porogen-containing precursor films. The porogen may be a hydrocarbon such as a terpene (e.g., alpha-terpinene) or a norbornene (e.g., ENB). The resulting porous low-k dielectric matrix can then be annealed to remove water and remaining silanols capped to protect it from degradation by ambient conditions, which methods will also be described.
摘要翻译：提供了在衬底上制备多孔低k电介质材料的方法。这些方法涉及使用紫外线辐射与含致孔剂的前体膜反应并除去致孔剂，留下多孔的低k电介质基质。描述了使用氧化条件和非氧化条件的方法。所描述的方法可用于从含致孔剂的前体膜中除去致孔剂。致孔剂可以是烃，例如萜烯（例如α-萜品烯）或降冰片烯（例如ENB）。然后可以将得到的多孔低k电介质基体退火以除去水和封闭的剩余硅烷醇，以保护其免受环境条件的退化，这些方法也将被描述。

3. 发明授权

US6149779A Low-k BSG gap fill process using HDP 有权
标题翻译：使用HDP的低k BSG间隙填充过程
公开(公告)号：US6149779A
公开(公告)日：2000-11-21
申请号：US185164
申请日：1998-11-03
申请人： Patrick A. Van Cleemput
发明人： Patrick A. Van Cleemput
IPC分类号： C23C16/40 , H01L21/768 , C23L14/34
CPC分类号： C23C16/401 , H01L21/76837
摘要： A low dielectric constant gap-fill process using high density plasma (HDP) deposition is provided for depositing a boron-doped silicon oxide layer to eliminate the damaging effects of fluorine on underlying circuitry while still maintaining a low dielectric constant for an intermetal dielectric (IMD) layer.
摘要翻译：提供了使用高密度等离子体（HDP）沉积的低介电常数间隙填充工艺，用于沉积硼掺杂的氧化硅层以消除氟在底层电路上的破坏作用，同时仍保持金属间电介质的低介电常数（IMD ）层。

4. 发明授权

US06766810B1 Methods and apparatus to control pressure in a supercritical fluid reactor 有权
标题翻译：控制超临界流体反应器压力的方法和装置
公开(公告)号：US06766810B1
公开(公告)日：2004-07-27
申请号：US10078213
申请日：2002-02-15
申请人： Patrick A. Van Cleemput
发明人： Patrick A. Van Cleemput
IPC分类号： B08B1300
CPC分类号： B08B7/0021 , B01D11/0203 , B01D11/0403 , Y10T137/0379 , Y10T137/8326
摘要： The present invention pertains to methods and apparatus for controlling the pressure in a supercritical processing system. Active methods for controlling the pressure include anticipating a pressure deviation due to a solute addition to a system, and changing the pressure within the system to compensate for the deviation. In this way, a desired pressure is achieved when the solute is added, without phase separation of the solute from the solvent. Pressure is adjusted by changing the volume of the supercritical processing system. Passive methods include adjusting the pressure of a supercritical system by changing the volume in response to a pressure deviation from a desired pressure. Apparatus for controlling the pressure in a supercritical processing system are described.
摘要翻译：本发明涉及用于控制超临界处理系统中的压力的方法和装置。用于控制压力的主动方法包括预测由于系统中的溶质添加引起的压力偏差，以及改变系统内的压力以补偿偏差。以这种方式，当添加溶质而不使溶质从溶剂中分离时，获得所需的压力。通过改变超临界处理系统的体积来调节压力。被动方法包括通过响应于与期望压力的压力偏差来改变体积来调节超临界系统的压力。描述了用于控制超临界处理系统中的压力的装置。

5. 发明授权

US06395150B1 Very high aspect ratio gapfill using HDP 失效
标题翻译：使用HDP的高宽比差填充
公开(公告)号：US06395150B1
公开(公告)日：2002-05-28
申请号：US09053554
申请日：1998-04-01
申请人： Patrick A. Van Cleemput , George D. Papasouliotis , Mark A. Logan , Bart van Schravendijk , William J. King
发明人： Patrick A. Van Cleemput , George D. Papasouliotis , Mark A. Logan , Bart van Schravendijk , William J. King
IPC分类号： C23C1400
CPC分类号： H01L21/02164 , C23C16/045 , C23C16/507 , H01L21/02129 , H01L21/02274 , H01L21/31612 , H01L21/76224
摘要： A process for filling high aspect ratio gaps on substrates uses conventional high density plasma deposition processes, with an efficient sputtering inert gas, such as Ar, replaced or reduced with an He inefficient sputtering inert gas such as He. By reducing the sputtering component, sidewall deposition from the sputtered material is reduced. Consequently, gaps with aspect ratios of 6.0:1 and higher can be filled without the formation of voids and without damaging circuit elements.
摘要翻译：用于在衬底上填充高纵横比间隙的方法使用常规的高密度等离子体沉积工艺，用诸如He的He低效溅射惰性气体替代或还原有效的溅射惰性气体，例如Ar。通过减少溅射部件，减少了来自溅射材料的侧壁沉积。因此，可以在不形成空隙并且不损坏电路元件的情况下填充宽高比为6.0:1和更高的间隙。

6. 发明授权

US06951765B1 Method and apparatus for introduction of solid precursors and reactants into a supercritical fluid reactor 失效
标题翻译：将固体前体和反应物引入超临界流体反应器的方法和装置
公开(公告)号：US06951765B1
公开(公告)日：2005-10-04
申请号：US10016017
申请日：2001-12-12
申请人： Sanjay Gopinath , Patrick A. Van Cleemput , Michelle Schulberg , Sasangan Ramanathan , Francisco Juarez , Patrick Joyce
发明人： Sanjay Gopinath , Patrick A. Van Cleemput , Michelle Schulberg , Sasangan Ramanathan , Francisco Juarez , Patrick Joyce
IPC分类号： B08B13/00 , C23C18/16 , C25D5/00
CPC分类号： C23C18/1685 , C23C18/1678 , C25D5/003 , C25D17/02 , C25D21/18
摘要： The present invention pertains to apparatus and methods for introduction of solid precursors and reactants into a supercritical fluid reactor. Solids are dissolved in supercritical fluid solvents in generator apparatus separate from the supercritical fluid reactor. Such apparatus preferably generate saturated solutions of solid precursors via recirculation of supercritical fluids through a vessel containing the solid precursors. Supercritical solutions of the solids are introduced into the reactor, which itself is charged with a supercritical fluid. Supercritical conditions are maintained during the delivery of the dissolved precursor to the reactor. Recirculation of supercritical precursor solutions through the reactor may or may not be implemented in methods of the invention. Methods of the invention are particularly well suited for integrated circuit fabrication, where films are deposited on wafers under supercritical conditions.
摘要翻译：本发明涉及将固体前体和反应物引入超临界流体反应器的装置和方法。固体溶解在与超临界流体反应器分离的发生器装置中的超临界流体溶剂中。这种装置优选地通过超临界流体再循环通过含有固体前体的容器来产生固体前体的饱和溶液。将固体的超临界溶液引入反应器，反应器本身装有超临界流体。在将溶解的前体输送到反应器期间，保持超临界条件。通过反应器的超临界前体溶液的再循环可以或可以不在本发明的方法中实施。本发明的方法特别适用于集成电路制造，其中膜在超临界条件下沉积在晶片上。

7. 发明授权

US06846391B1 Process for depositing F-doped silica glass in high aspect ratio structures 失效
标题翻译：在高纵横比结构中沉积F掺杂石英玻璃的方法
公开(公告)号：US06846391B1
公开(公告)日：2005-01-25
申请号：US10035773
申请日：2001-12-21
申请人： George D. Papasouliotis , Robert D. Tas , Patrick A. Van Cleemput , Bart van Schravendijk
发明人： George D. Papasouliotis , Robert D. Tas , Patrick A. Van Cleemput , Bart van Schravendijk
IPC分类号： C23C16/04 , C23C16/507 , H01L21/316 , H01L21/762 , C23C14/00 , B44C1/22 , C03C15/00 , C23C14/32 , H05H1/02
CPC分类号： C23C16/045 , C23C16/401 , C23C16/509 , H01L21/02129 , H01L21/02164 , H01L21/02274 , H01L21/31612 , H01L21/76224
摘要： A process for filling high aspect ratio gaps on substrates uses conventional high density plasma deposition processes to deposit fluorine-doped films, with an efficient sputtering inert gas, such as Ar, replaced or reduced with an inefficient sputtering inert gas such as He and/or hydrogen. By reducing the sputtering component, sidewall deposition from the sputtered material is reduced. Consequently, gaps with aspect ratios greater than 3.0:1 and spacings between lines less than 0.13 microns can be filled with low dielectric constant films without the formation of voids and without damaging circuit elements.
摘要翻译：用于在衬底上填充高纵横比间隙的方法使用常规的高密度等离子体沉积工艺沉积氟掺杂的膜，利用诸如Ar的有效溅射惰性气体（例如Ar）被替换或还原，其中诸如He和/或氢。通过减少溅射部件，减少了来自溅射材料的侧壁沉积。因此，宽高比大于3.0:1的间隙和小于0.13微米的线之间的间距可以用低介电常数膜填充而不形成空隙并且不损坏电路元件。

8. 发明授权

US06867152B1 Properties of a silica thin film produced by a rapid vapor deposition (RVD) process 失效
标题翻译：通过快速气相沉积（RVD）工艺生产的二氧化硅薄膜的性能
公开(公告)号：US06867152B1
公开(公告)日：2005-03-15
申请号：US10672309
申请日：2003-09-26
申请人： Dennis M. Hausmann , Adrianne K. Tipton , Patrick A. Van Cleemput , Bunsen Nie , Francisco J. Juarez , Teresa Pong
发明人： Dennis M. Hausmann , Adrianne K. Tipton , Patrick A. Van Cleemput , Bunsen Nie , Francisco J. Juarez , Teresa Pong
IPC分类号： C23C16/40 , C23C16/44 , C23C16/455 , H01L21/314 , H01L21/316 , H01L21/768 , H01L21/31 , H01L21/469
CPC分类号： C23C16/45553 , C23C16/401 , C23C16/45534 , H01L21/3141 , H01L21/31608 , H01L21/31616 , H01L21/76828 , H01L21/76837 , Y10S438/909 , Y10S438/935
摘要： A rapid vapor deposition (RVD) method conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film has a low dielectric constant, low wet etch rate, low film shrinkage and low stress hysteresis, appropriate for various integrated circuit dielectric gap fill applications such as shallow trench isolation. The method includes the following two principal operations: depositing a thin conformal and saturated layer of aluminum-containing precursor over some or all of the substrate surface; and exposing the saturated layer of aluminum-containing precursor to a silicon-containing precursor gas to form a dielectric layer. In some cases, the substrate temperatures during contact with silicon-containing precursor are greater than about 250 degree Celsius to produce an improved film. In other cases, post-deposition anneal process may be used to improve properties of the film. Generally an inert gas purge is employed between the introduction of reactant gases to remove byproducts and unused reactants. These operations can be repeated to deposit multiple layers of dielectric material until a desired dielectric thickness is achieved.
摘要翻译：快速蒸镀（RVD）方法在介质材料的小特征上共形沉积介电材料。所得到的介电膜具有低介电常数，低湿蚀刻速率，低膜收缩率和低应力滞后，适用于各种集成电路电介质间隙填充应用，如浅沟槽隔离。该方法包括以下两个主要操作：在部分或全部基材表面上沉积薄的共形和饱和的含铝前体层; 并将含铝前体的饱和层暴露于含硅前体气体中以形成电介质层。在某些情况下，与含硅前体接触时的基板温度大于约250摄氏度以产生改进的膜。在其他情况下，可以使用后沉积退火工艺来改善膜的性能。通常，在引入反应气体以除去副产物和未使用的反应物之间采用惰性气体吹扫。可以重复这些操作以沉积多层介电材料，直到达到所需的介电厚度。

9. 发明授权

US06340628B1 Method to deposit SiOCH films with dielectric constant below 3.0 有权
标题翻译：沉积介电常数低于3.0的SiOCH膜的方法
公开(公告)号：US06340628B1
公开(公告)日：2002-01-22
申请号：US09735318
申请日：2000-12-12
申请人： Patrick A. Van Cleemput , Ravi Kumar Laxman , Jen Shu , Michelle T. Schulberg , Bunsen Nie
发明人： Patrick A. Van Cleemput , Ravi Kumar Laxman , Jen Shu , Michelle T. Schulberg , Bunsen Nie
IPC分类号： H01L213205
CPC分类号： H01L21/02126 , C23C16/30 , H01L21/02216 , H01L21/02274 , H01L21/31633
摘要： A chemical vapor deposition (CVD) process uses a precursor gas, such as with a siloxane or alkylsilane, and a carbon-dioxide-containing gas, such as CO2 with O2 or CO2 with CxH(2x+1)OH where 1≦x≦5, to deposit a dielectric layer with no photoresist “footing”, a low dielectric constant, and high degrees of adhesion and hardness. Because nitrogen is not used in the deposition process (the carbon-dioxide-containing gas replaces nitrogen-containing gases in conventional processes), amines do not build into the deposited layer, thereby preventing photoresist “footing”.
摘要翻译：化学气相沉积（CVD）方法使用前体气体，例如与硅氧烷或烷基硅烷，以及含二氧化碳的气体，例如具有C x H（2x + 1）OH的O 2或CO 2的二氧化碳气体，其中1 <= x 为了沉积没有光致抗蚀剂“基脚”的介电层，低介电常数和高度的附着力和硬度。由于在沉积工艺中不使用氮（在常规工艺中，含二氧化碳的气体替代含氮气体），胺不会沉积到沉积层中，从而防止光致抗蚀剂“基础”。

10. 发明授权

US07176144B1 Plasma detemplating and silanol capping of porous dielectric films 有权
标题翻译：多孔绝缘膜的等离子体脱模和硅烷醇封端
公开(公告)号：US07176144B1
公开(公告)日：2007-02-13
申请号：US10785235
申请日：2004-02-23
申请人： Feng Wang , Michelle T. Schulberg , Jianing Sun , Raashina Humayun , Patrick A. Van Cleemput
发明人： Feng Wang , Michelle T. Schulberg , Jianing Sun , Raashina Humayun , Patrick A. Van Cleemput
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/31695 , H01L21/02126 , H01L21/02203 , H01L21/0234 , H01L21/3105
摘要： Methods of preparing a low-k dielectric material on a substrate are provided. The methods involve using plasma techniques to remove porogen from a precursor layer comprising porogen and a dielectric matrix and to protect the dielectric matrix with a silanol capping agent, resulting in a low-k dielectric matrix. Porogen removal and silanol capping can occur concurrently or sequentially. If performed sequentially, silanol capping is performed without first exposing the dielectric matrix to moisture or ambient conditions.
摘要翻译：提供了在衬底上制备低k电介质材料的方法。这些方法涉及使用等离子体技术从包含致孔剂和电介质基质的前体层中除去致孔剂，并且用硅烷醇封端剂保护介电基质，导致低k电介质基质。除磷和硅烷醇封端可以同时或顺序进行。如果顺序执行，则不首先将电介质基质暴露于水分或环境条件下进行硅烷醇封端。

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