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    • 3. 发明授权
    • Process for forming a low dielectric constant carbon-containing film
    • 用于形成低介电常数含碳膜的方法
    • US06632478B2
    • 2003-10-14
    • US09791989
    • 2001-02-22
    • Frederic GaillardLi-Qun XiaJen ShuEllie YiehTian-Hoe Lim
    • Frederic GaillardLi-Qun XiaJen ShuEllie YiehTian-Hoe Lim
    • C23C1640
    • B05D1/60C23C16/401C23C16/56H01L21/02126H01L21/02203H01L21/02211H01L21/02274H01L21/02337H01L21/0234H01L21/02362H01L21/3146H01L21/31633
    • An embodiment of the present invention provides methods for forming a carbon-containing layer having a low dielectric constant and good gap-fill capabilities. A method includes depositing a carbon-containing layer on a substrate and transforming the carbon-containing layer to remove at least some of the carbon. The transforming step may include annealing the carbon-containing layer in a furnace containing a hydrogen atmosphere, for example. The carbon-containing layer may be a carbon-doped silicon oxide material, where the transforming step changes the carbon-doped silicon oxide. Additionally, the method may include subjecting the annealed layer to a hydrogen and/or low oxygen plasma treatment to further remove carbon from the layer. Additionally, a step of adding a capping layer to the annealed, plasma treated material is provided. Products made by the above methods are also included, such as a product including a low k carbon-containing layer where the low k carbon-containing layer has been transformed to remove some of the carbon from the layer. An additional product includes a transformed carbon-containing layer further subjected to a hydrogen plasma treatment to remove more carbon from the layer. Further, a capping layer deposited over the transformed and hydrogen plasma treated layer is provided.
    • 本发明的一个实施方案提供了形成具有低介电常数和良好间隙填充能力的含碳层的方法。 一种方法包括在基底上沉积含碳层并转化含碳层以除去至少一些碳。 转化步骤可以包括例如在含有氢气氛的炉子中退火含碳层。 含碳层可以是碳掺杂的氧化硅材料,其中转化步骤改变碳掺杂的氧化硅。 另外,该方法可以包括对退火层进行氢和/或低氧等离子体处理以进一步从层去除碳。 此外,提供了向退火的等离子体处理材料添加覆盖层的步骤。 还包括通过上述方法制备的产品,例如包含低k含碳层的产品,其中低k含碳层已被转化以从层中去除一些碳。 另外的产物包括进一步进行氢等离子体处理以从层中除去更多的碳的转化含碳层。 此外,提供了沉积在转化和氢等离子体处理层上的覆盖层