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1. 外观设计

USD1000925S1 Outside corner mud plastering tool 有权
公开(公告)号：USD1000925S1
公开(公告)日：2023-10-10
申请号：US29826323
申请日：2022-02-11
申请人： Francisco J. Juarez , Ivan Juarez
设计人： Francisco J. Juarez , Ivan Juarez
摘要： FIG. 1 is an isometric view of the outside corner mud plastering tool showing our new design;
FIG. 2 is the view of the front of the outside corner mud plastering tool of FIG. 1;
FIG. 3 is the view of the top of the outside corner mud plastering tool of FIG. 1;
FIG. 4 is the view of the bottom of the outside corner mud plastering tool of FIG. 1;
FIG. 5 is the view of the right side of the outside corner mud plastering tool of FIG. 1;
FIG. 6 is the view of the left side of the outside corner mud plastering tool of FIG. 1; and,
FIG. 7 is the view of the back of the outside corner mud plastering tool of FIG. 1.

2. 发明授权

US09082589B2 Hybrid impedance matching for inductively coupled plasma system 有权
标题翻译：电感耦合等离子体系统的混合阻抗匹配
公开(公告)号：US09082589B2
公开(公告)日：2015-07-14
申请号：US13648183
申请日：2012-10-09
申请人： George Thomas , Panya Wongsenakhum , Francisco J. Juarez
发明人： George Thomas , Panya Wongsenakhum , Francisco J. Juarez
IPC分类号： H03H7/40 , H01J37/32 , H05H1/46
CPC分类号： H05H1/46 , H01J37/321 , H01J37/32174 , H01J37/32183 , H03H7/40 , H05H2001/4607 , H05H2001/4645 , H05H2001/4682
摘要： In one aspect, a system includes a generator configured to generate and tune a frequency of a supply signal. The system includes an auto-matching network configured to receive the supply signal and to generate an impedance-matched signal for use in powering a plasma system. In some implementations, during a first stage of an impedance matching operation, the generator is configured to tune the frequency of the supply signal until the generator identifies a frequency for which the reactance of the generator and the reactance of the load are best matched. In some implementations, during a second stage of the impedance matching operation, the auto-matching network is configured to tune a tuning element within the auto-matching network until the auto-matching network identifies a tuning of the tuning element for which the resistance of the generator and the resistance of the load are best matched.
摘要翻译：在一个方面，系统包括被配置为产生和调谐供应信号的频率的发生器。该系统包括被配置为接收电源信号并产生用于为等离子体系统供电的阻抗匹配信号的自动匹配网络。在一些实施方案中，在阻抗匹配操作的第一阶段期间，发电机被配置为调谐供电信号的频率，直到发电机识别发生器的电抗和负载的电抗最佳匹配的频率。在一些实施方案中，在阻抗匹配操作的第二阶段期间，自动匹配网络被配置为调整自适应网络内的调谐元件，直到自动匹配网络识别调谐元件的调谐为止，发电机和负载电阻最匹配。

3. 发明申请

US20140097751A1 HYBRID IMPEDANCE MATCHING FOR INDUCTIVELY COUPLED PLASMA SYSTEM 有权
标题翻译：用于感应耦合等离子体系统的混合阻抗匹配
公开(公告)号：US20140097751A1
公开(公告)日：2014-04-10
申请号：US13648183
申请日：2012-10-09
申请人： George Thomas , Panya Wongsenakhum , Francisco J. Juarez
发明人： George Thomas , Panya Wongsenakhum , Francisco J. Juarez
IPC分类号： H05H1/46
CPC分类号： H05H1/46 , H01J37/321 , H01J37/32174 , H01J37/32183 , H03H7/40 , H05H2001/4607 , H05H2001/4645 , H05H2001/4682
摘要： In one aspect, a system includes a generator configured to generate and tune a frequency of a supply signal. The system includes an auto-matching network configured to receive the supply signal and to generate an impedance-matched signal for use in powering a plasma system. In some implementations, during a first stage of an impedance matching operation, the generator is configured to tune the frequency of the supply signal until the generator identifies a frequency for which the reactance of the generator and the reactance of the load are best matched. In some implementations, during a second stage of the impedance matching operation, the auto-matching network is configured to tune a tuning element within the auto-matching network until the auto-matching network identifies a tuning of the tuning element for which the resistance of the generator and the resistance of the load are best matched.
摘要翻译：在一个方面，系统包括被配置为产生和调谐供应信号的频率的发生器。该系统包括被配置为接收电源信号并产生用于为等离子体系统供电的阻抗匹配信号的自动匹配网络。在一些实施方案中，在阻抗匹配操作的第一阶段期间，发电机被配置为调谐供电信号的频率，直到发电机识别发生器的电抗和负载的电抗最佳匹配的频率。在一些实施方案中，在阻抗匹配操作的第二阶段期间，自动匹配网络被配置为调整自适应网络内的调谐元件，直到自动匹配网络识别调谐元件的调谐为止，发电机和负载电阻最匹配。

4. 发明申请

US20220009279A1 Mud-Plastering Scoop 有权
公开(公告)号：US20220009279A1
公开(公告)日：2022-01-13
申请号：US16927024
申请日：2020-07-13
申请人： Francisco J. Juarez , Ivan Juarez
发明人： Francisco J. Juarez , Ivan Juarez
IPC分类号： B44D3/16
摘要： A scoop for removing semi-fluid materials such as acrylic stucco from a bucket, with a close gripping handle to improve leverage and a scalloped top edge of the receptacle that allows excess material to flow out of the receptacle.

5. 发明授权

US06867152B1 Properties of a silica thin film produced by a rapid vapor deposition (RVD) process 失效
标题翻译：通过快速气相沉积（RVD）工艺生产的二氧化硅薄膜的性能
公开(公告)号：US06867152B1
公开(公告)日：2005-03-15
申请号：US10672309
申请日：2003-09-26
申请人： Dennis M. Hausmann , Adrianne K. Tipton , Patrick A. Van Cleemput , Bunsen Nie , Francisco J. Juarez , Teresa Pong
发明人： Dennis M. Hausmann , Adrianne K. Tipton , Patrick A. Van Cleemput , Bunsen Nie , Francisco J. Juarez , Teresa Pong
IPC分类号： C23C16/40 , C23C16/44 , C23C16/455 , H01L21/314 , H01L21/316 , H01L21/768 , H01L21/31 , H01L21/469
CPC分类号： C23C16/45553 , C23C16/401 , C23C16/45534 , H01L21/3141 , H01L21/31608 , H01L21/31616 , H01L21/76828 , H01L21/76837 , Y10S438/909 , Y10S438/935
摘要： A rapid vapor deposition (RVD) method conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film has a low dielectric constant, low wet etch rate, low film shrinkage and low stress hysteresis, appropriate for various integrated circuit dielectric gap fill applications such as shallow trench isolation. The method includes the following two principal operations: depositing a thin conformal and saturated layer of aluminum-containing precursor over some or all of the substrate surface; and exposing the saturated layer of aluminum-containing precursor to a silicon-containing precursor gas to form a dielectric layer. In some cases, the substrate temperatures during contact with silicon-containing precursor are greater than about 250 degree Celsius to produce an improved film. In other cases, post-deposition anneal process may be used to improve properties of the film. Generally an inert gas purge is employed between the introduction of reactant gases to remove byproducts and unused reactants. These operations can be repeated to deposit multiple layers of dielectric material until a desired dielectric thickness is achieved.
摘要翻译：快速蒸镀（RVD）方法在介质材料的小特征上共形沉积介电材料。所得到的介电膜具有低介电常数，低湿蚀刻速率，低膜收缩率和低应力滞后，适用于各种集成电路电介质间隙填充应用，如浅沟槽隔离。该方法包括以下两个主要操作：在部分或全部基材表面上沉积薄的共形和饱和的含铝前体层; 并将含铝前体的饱和层暴露于含硅前体气体中以形成电介质层。在某些情况下，与含硅前体接触时的基板温度大于约250摄氏度以产生改进的膜。在其他情况下，可以使用后沉积退火工艺来改善膜的性能。通常，在引入反应气体以除去副产物和未使用的反应物之间采用惰性气体吹扫。可以重复这些操作以沉积多层介电材料，直到达到所需的介电厚度。

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