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1. 发明授权

US06846391B1 Process for depositing F-doped silica glass in high aspect ratio structures 失效
标题翻译：在高纵横比结构中沉积F掺杂石英玻璃的方法
公开(公告)号：US06846391B1
公开(公告)日：2005-01-25
申请号：US10035773
申请日：2001-12-21
申请人： George D. Papasouliotis , Robert D. Tas , Patrick A. Van Cleemput , Bart van Schravendijk
发明人： George D. Papasouliotis , Robert D. Tas , Patrick A. Van Cleemput , Bart van Schravendijk
IPC分类号： C23C16/04 , C23C16/507 , H01L21/316 , H01L21/762 , C23C14/00 , B44C1/22 , C03C15/00 , C23C14/32 , H05H1/02
CPC分类号： C23C16/045 , C23C16/401 , C23C16/509 , H01L21/02129 , H01L21/02164 , H01L21/02274 , H01L21/31612 , H01L21/76224
摘要： A process for filling high aspect ratio gaps on substrates uses conventional high density plasma deposition processes to deposit fluorine-doped films, with an efficient sputtering inert gas, such as Ar, replaced or reduced with an inefficient sputtering inert gas such as He and/or hydrogen. By reducing the sputtering component, sidewall deposition from the sputtered material is reduced. Consequently, gaps with aspect ratios greater than 3.0:1 and spacings between lines less than 0.13 microns can be filled with low dielectric constant films without the formation of voids and without damaging circuit elements.
摘要翻译：用于在衬底上填充高纵横比间隙的方法使用常规的高密度等离子体沉积工艺沉积氟掺杂的膜，利用诸如Ar的有效溅射惰性气体（例如Ar）被替换或还原，其中诸如He和/或氢。通过减少溅射部件，减少了来自溅射材料的侧壁沉积。因此，宽高比大于3.0:1的间隙和小于0.13微米的线之间的间距可以用低介电常数膜填充而不形成空隙并且不损坏电路元件。

2. 发明授权

US06395150B1 Very high aspect ratio gapfill using HDP 失效
标题翻译：使用HDP的高宽比差填充
公开(公告)号：US06395150B1
公开(公告)日：2002-05-28
申请号：US09053554
申请日：1998-04-01
申请人： Patrick A. Van Cleemput , George D. Papasouliotis , Mark A. Logan , Bart van Schravendijk , William J. King
发明人： Patrick A. Van Cleemput , George D. Papasouliotis , Mark A. Logan , Bart van Schravendijk , William J. King
IPC分类号： C23C1400
CPC分类号： H01L21/02164 , C23C16/045 , C23C16/507 , H01L21/02129 , H01L21/02274 , H01L21/31612 , H01L21/76224
摘要： A process for filling high aspect ratio gaps on substrates uses conventional high density plasma deposition processes, with an efficient sputtering inert gas, such as Ar, replaced or reduced with an He inefficient sputtering inert gas such as He. By reducing the sputtering component, sidewall deposition from the sputtered material is reduced. Consequently, gaps with aspect ratios of 6.0:1 and higher can be filled without the formation of voids and without damaging circuit elements.
摘要翻译：用于在衬底上填充高纵横比间隙的方法使用常规的高密度等离子体沉积工艺，用诸如He的He低效溅射惰性气体替代或还原有效的溅射惰性气体，例如Ar。通过减少溅射部件，减少了来自溅射材料的侧壁沉积。因此，可以在不形成空隙并且不损坏电路元件的情况下填充宽高比为6.0:1和更高的间隙。

3. 发明授权

US6030881A High throughput chemical vapor deposition process capable of filling high aspect ratio structures 失效
标题翻译：能够填充高纵横比结构的高通量化学气相沉积工艺
公开(公告)号：US6030881A
公开(公告)日：2000-02-29
申请号：US72759
申请日：1998-05-05
申请人： George D. Papasouliotis , Ashima B. Chakravarti , Richard A. Conti , Laertis Economikos , Patrick A. Van Cleemput
发明人： George D. Papasouliotis , Ashima B. Chakravarti , Richard A. Conti , Laertis Economikos , Patrick A. Van Cleemput
IPC分类号： C23C16/04 , C23C16/40 , C23C16/56 , H01L21/762
CPC分类号： H01L21/76224 , C23C16/045 , C23C16/401 , C23C16/56
摘要： A method is provided for filling high aspect ratio gaps without void formation by using a high density plasma (HDP) deposition process with a sequence of deposition and etch steps having varying etch rate-to-deposition rate (etch/dep) ratios. The first step uses an etch/dep ratio less than one to quickly fill the gap. The first step is interrupted before the opening to the gap is closed. The second step uses an etch/dep ratio greater than one to widen the gap. The second step is stopped before corners of the elements forming the gaps are exposed. These steps can be repeated until the aspect ratio of the gap is reduced so that void-free gap-fill is possible. The etch/dep ratio and duration of each step can be optimized for high throughput and high aspect ratio gap-fill capacity.
摘要翻译：提供了一种通过使用具有不同蚀刻速率 - 沉积速率（蚀刻/去除）比率的沉积和蚀刻步骤顺序的高密度等离子体（HDP）沉积工艺来填充高纵横比间隙而无空隙形成的方法。第一步使用小于1的蚀刻/剥离比快速填充间隙。第一步在打开间隙之前中断。第二步使用大于1的蚀刻/剥离比来扩大间隙。在形成间隙的元件的角部暴露之前停止第二步骤。可以重复这些步骤，直到间隙的纵横比减小，使得无空隙间隙填充成为可能。可以优化每个步骤的蚀刻/剥离比和持续时间，以实现高通量和高纵横比填充间隙。

4. 发明授权

US07067440B1 Gap fill for high aspect ratio structures 有权
公开(公告)号：US07067440B1
公开(公告)日：2006-06-27
申请号：US10890655
申请日：2004-07-13
申请人： Atiye Bayman , Md Sazzadur Rahman , Weijie Zhang , Bart van Schravendijk , Vishal Gauri , George D. Papasouliotis , Vikram Singh
发明人： Atiye Bayman , Md Sazzadur Rahman , Weijie Zhang , Bart van Schravendijk , Vishal Gauri , George D. Papasouliotis , Vikram Singh
IPC分类号： H01L21/00
CPC分类号： C23C16/401 , C23C16/045
摘要： Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen as a process gas in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.

5. 发明授权

US06794290B1 Method of chemical modification of structure topography 有权
标题翻译：结构形貌化学修饰方法
公开(公告)号：US06794290B1
公开(公告)日：2004-09-21
申请号：US10004386
申请日：2001-12-03
申请人： George D. Papasouliotis , Robert D. Tas
发明人： George D. Papasouliotis , Robert D. Tas
IPC分类号： H01L21311
CPC分类号： H01L21/02164 , C23C16/045 , H01L21/02274 , H01L21/31612 , H01L21/76224
摘要： A method is provided for filling high aspect ratio gaps without void formation by using a high density plasma (HDP) deposition process with a sequence of deposition and hydrogen etch steps. The first step uses an etch/dep ratio less than one to quickly fill the gap. The first step is interrupted before the opening to the gap is closed. The second step uses a hydrogen-based plasma to chemically etch the deposited material to widen the gap. The second step is stopped before corners of the elements forming the gaps are exposed. These steps can be repeated until the aspect ratio of the gap is reduced so that void-free gap-fill is possible. The etch/dep ratio and duration of each step can be optimized for high throughput and high aspect ratio gap-fill capacity.
摘要翻译：提供了一种用于通过使用具有一系列沉积和氢蚀刻步骤的高密度等离子体（HDP）沉积工艺来填充高纵横比间隙而无空隙形成的方法。第一步使用小于1的蚀刻/剥离比快速填充间隙。第一步在打开间隙之前中断。第二步使用氢基等离子体来化学蚀刻沉积的材料以扩大间隙。在形成间隙的元件的角部暴露之前停止第二步骤。可以重复这些步骤，直到间隙的纵横比减小，使得无空隙间隙填充成为可能。可以优化每个步骤的蚀刻/剥离比和持续时间，以实现高通量和高纵横比填充间隙。

6. 发明申请

US20120309180A1 METHOD OF FORMING A RETROGRADE MATERIAL PROFILE USING ION IMPLANTATION 审中-公开
标题翻译：使用离子植入材料形成复合材料剖面的方法
公开(公告)号：US20120309180A1
公开(公告)日：2012-12-06
申请号：US13588793
申请日：2012-08-17
申请人： Ludovic Godet , George D. Papasouliotis
发明人： Ludovic Godet , George D. Papasouliotis
IPC分类号： H01L21/265
CPC分类号： H01L21/26506 , H01L21/26513 , H01L21/26566 , H01L21/2658
摘要： A method of forming a retrograde material profile in a substrate includes forming a surface peak profile on the substrate. Ions are then implanted into the substrate to form a retrograde profile from the surface peak profile, at least one of an ion implantation dose and an ion implantation energy of the implanted ions being chosen so that the retrograde profile has a peak concentration that is positioned at a desired distance from the surface of the substrate.
摘要翻译：在衬底中形成逆行材料轮廓的方法包括在衬底上形成表面峰分布。然后将离子注入到衬底中以从表面峰曲线形成逆行曲线，选择注入离子的离子注入剂量和离子注入能量中的至少一种，使得逆行曲线具有位于距离衬底表面的期望距离。

7. 发明申请

US20110086501A1 Technique for Processing a Substrate Having a Non-Planar Surface 有权
标题翻译：用于处理具有非平面表面的基板的技术
公开(公告)号：US20110086501A1
公开(公告)日：2011-04-14
申请号：US12902250
申请日：2010-10-12
申请人： George D. Papasouliotis , Vikram Singh , Heyun Yin , Helen L. Maynard , Ludovic Godet
发明人： George D. Papasouliotis , Vikram Singh , Heyun Yin , Helen L. Maynard , Ludovic Godet
IPC分类号： H01L21/30
CPC分类号： H01L21/2236 , H01J37/321 , H01J37/32706 , H01J37/32834 , H01L29/66803
摘要： A method of processing a substrate having horizontal and non-horizontal surfaces is disclosed. The substrate is implanted with particles using an ion implanter. During the ion implant, due to the nature of the implant process, a film may be deposited on the surfaces, wherein the thickness of this film is thicker on the horizontal surfaces. The presences of this film may adversely alter the properties of the substrate. To rectify this, a second process step is performed to remove the film deposited on the horizontal surfaces. In some embodiments, an etching process is used to remove this film. In some embodiments, a material modifying step is used to change the composition of the material comprising the film. This material modifying step may be instead of, or in addition to the etching process.
摘要翻译：公开了一种处理具有水平和非水平表面的衬底的方法。使用离子注入机将基片注入颗粒。在离子注入期间，由于植入过程的性质，可以在表面上沉积膜，其中该膜的厚度在水平表面上更厚。该膜的存在可能不利地改变基材的性质。为了纠正这一点，执行第二处理步骤以去除沉积在水平表面上的膜。在一些实施例中，使用蚀刻工艺去除该膜。在一些实施方案中，材料修饰步骤用于改变包含该膜的材料的组成。该材料修饰步骤可以代替或补充蚀刻工艺。

8. 发明申请

US20110000896A1 SYSTEM AND METHOD FOR SELECTIVELY CONTROLLING ION COMPOSITION OF ION SOURCES 有权
标题翻译：用于选择性地控制离子源组成的系统和方法
公开(公告)号：US20110000896A1
公开(公告)日：2011-01-06
申请号：US12496080
申请日：2009-07-01
申请人： Kamal Hadidi , Rajesh Dorai , Bernard G. Lindsay , Vikram Singh , George D. Papasouliotis
发明人： Kamal Hadidi , Rajesh Dorai , Bernard G. Lindsay , Vikram Singh , George D. Papasouliotis
IPC分类号： H05H1/34 , H01L21/465
CPC分类号： C23C14/48 , H01J37/32412 , H01J37/32935
摘要： A method is disclosed for adjusting the composition of plasmas used in plasma doping, plasma deposition and plasma etching techniques. The disclosed method enables the plasma composition to be controlled by modifying the energy distribution of the electrons present in the plasma. Energetic electrons are produced in the plasma by accelerating electrons in the plasma using very fast voltage pulses. The pulses are long enough to influence the electrons, but too fast to affect the ions significantly. Collisions between the energetic electrons and the constituents of the plasma result in changes in the plasma composition. The plasma composition can then be optimized to meet the requirements of the specific process being used. This can entail changing the ratio of ion species in the plasma, changing the ratio of ionization to dissociation, or changing the excited state population of the plasma.
摘要翻译：公开了一种用于调节用于等离子体掺杂，等离子体沉积和等离子体蚀刻技术的等离子体的组成的方法。所公开的方法使得能够通过修改存在于等离子体中的电子的能量分布来控制等离子体组成。通过使用非常快的电压脉冲加速等离子体中的电子，在等离子体中产生能量电子。脉冲长度足以影响电子，但是太快而不能显着影响离子。能量电子与等离子体成分之间的碰撞导致等离子体组成的变化。然后可以优化等离子体组成以满足所使用的具体方法的要求。这可能需要改变等离子体中的离子种类的比例，改变离子化与解离的比例，或改变等离子体的激发态群体。

9. 发明申请

US20090278059A1 APPARATUS FOR DETECTING FILM DELAMINATION AND A METHOD THEREOF 有权
标题翻译：用于检测膜分层的装置及其方法
公开(公告)号：US20090278059A1
公开(公告)日：2009-11-12
申请号：US12428527
申请日：2009-04-23
申请人： Helen Maynard , George D. Papasouliotis
发明人： Helen Maynard , George D. Papasouliotis
IPC分类号： H01J37/08
CPC分类号： G01B11/0683
摘要： A method and apparatus are described herein which allow the progression of delamination of a film to be monitored. An interferometer is used to detect the onset and progression of thin film delamination. By projecting one or more wavelengths at a surface, and measuring the reflectance of these projected wavelengths, it is possible to monitor the progression of the delamination process. Testing has shown that different stages of the delamination process produce different reflectance graphs. This information can be used to establish implantation parameters, or can be used as an in situ monitor. The same techniques can be used for other applications. For example, in certain implantation systems, such as PECVD, a film of material may developed on the walls of the chamber. The techniques described herein can be used to monitor this separation, and determine when preventative maintenance may be performed on the chamber.
摘要翻译：本文描述了一种方法和装置，其允许待监测的膜的分层进展。干涉仪用于检测薄膜分层的发生和进展。通过在表面投射一个或多个波长并测量这些投影波长的反射率，可以监测分层过程的进展。测试表明，分层过程的不同阶段产生不同的反射率图。该信息可用于建立植入参数，或可用作原位监测。相同的技术可以用于其他应用。例如，在诸如PECVD的某些植入系统中，材料膜可以在室的壁上显影。本文描述的技术可以用于监测该分离，并且确定何时可以在腔室上进行预防性维护。

10. 发明授权

US07491653B1 Metal-free catalysts for pulsed deposition layer process for conformal silica laminates 有权
标题翻译：用于保形二氧化硅层压板的脉冲沉积层工艺的无金属催化剂
公开(公告)号：US07491653B1
公开(公告)日：2009-02-17
申请号：US11318268
申请日：2005-12-23
申请人： George D. Papasouliotis , Seon-Mee Cho , Ron Rulkens , Mihai Buretea , Dennis M. Hausmann , Michael Barnes
发明人： George D. Papasouliotis , Seon-Mee Cho , Ron Rulkens , Mihai Buretea , Dennis M. Hausmann , Michael Barnes
IPC分类号： H01L21/469 , H01L21/31
CPC分类号： H01L21/31612 , H01L21/02129 , H01L21/02164 , H01L21/02216 , H01L21/02271 , H01L21/0228 , H01L21/31625 , H01L21/31629 , H01L21/31633 , H01L21/76837
摘要： A metal- and metalloid-free nanolaminate dielectric film can be formed according to a pulsed layer deposition (PDL) process. A metal- and metalloid-free compound is used to catalyze the reaction of silica deposition by surface reaction of alkoxysilanols. Films can be grown at rates faster than 30 nm per exposure cycle. The invention can be used for the deposition of both doped (e.g., PSG) and undoped silicon oxide films. The films deposited are conformal, hence the method can accomplish void free gap-fill in high aspect ratio gaps encountered in advanced technology nodes (e.g., the 45 nm technology node and beyond), and can be used in other applications requiring conformal dielectric deposition.
摘要翻译：可以根据脉冲层沉积（PDL）工艺形成不含金属和非准金属的纳米酸盐电介质膜。使用金属和非准金属化合物催化二氧化硅沉积与烷氧基硅烷醇表面反应的反应。膜可以以每个曝光周期快30nm的速度生长。本发明可用于沉积掺杂（例如PSG）和未掺杂的氧化硅膜。沉积的膜是共形的，因此该方法可以在高级技术节点（例如，45nm技术节点及其以外）中遇到的高纵横比间隙中实现无空隙间隙填充，并可用于需要保形电介质沉积的其它应用中。

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