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1. 发明申请

US20110135824A1 Electroless Deposition System 审中-公开
标题翻译：无电沉积系统
公开(公告)号：US20110135824A1
公开(公告)日：2011-06-09
申请号：US13028607
申请日：2011-02-16
申请人： Ron Rulkens , Robert D. Tas , Shashank Ravindra Kulkarni , Artur Kolics , Nancy E. Gilbert
发明人： Ron Rulkens , Robert D. Tas , Shashank Ravindra Kulkarni , Artur Kolics , Nancy E. Gilbert
IPC分类号： B05D1/18 , B05D5/00
CPC分类号： C23C18/1682 , C23C18/1617 , C23C18/1619 , H05K3/187
摘要： An electroless deposition method includes providing a deposition solution, and saturating the deposition solution with an oxygen concentration in a range from about two thousand parts per million to about twenty thousand parts per million, and replenishing deionized water in the deposition solution.
摘要翻译：无电解沉积方法包括提供沉积溶液，并使沉积溶液饱和在约百万分之几到百万分之一的范围内的氧浓度，并在沉积溶液中补充去离子水。

2. 发明授权

US07913644B2 Electroless deposition system 有权
标题翻译：无电沉积系统
公开(公告)号：US07913644B2
公开(公告)日：2011-03-29
申请号：US11537643
申请日：2006-09-30
申请人： Ron Rulkens , Robert D. Tas , Shashank Ravindra Kulkarni , Artur Kolics , Nancy E. Gilbert
发明人： Ron Rulkens , Robert D. Tas , Shashank Ravindra Kulkarni , Artur Kolics , Nancy E. Gilbert
IPC分类号： B05C3/02
CPC分类号： C23C18/1682 , C23C18/1617 , C23C18/1619 , H05K3/187
摘要： An electroless deposition system includes a deposition solution, and saturating the deposition solution with an oxygen concentration in a range from about two thousand parts per million to about twenty thousand parts per million.
摘要翻译：无电解沉积系统包括沉积溶液，并使沉积溶液饱和，氧浓度在约百万分之几到百万分之一的范围内。

3. 发明申请

US20090253262A1 ELECTROLESS PLATING SYSTEM 有权
标题翻译：电镀系统
公开(公告)号：US20090253262A1
公开(公告)日：2009-10-08
申请号：US11549644
申请日：2006-10-14
申请人： Igor Ivanov , Robert D. Tas , Shashank Ravindra Kulkarni , Ron Rulkens
发明人： Igor Ivanov , Robert D. Tas , Shashank Ravindra Kulkarni , Ron Rulkens
IPC分类号： H01L21/3205 , C23C18/52 , B05C3/02
CPC分类号： C23C18/1683 , C23C18/1628 , C23C18/1682
摘要： An electroless plating system includes a plating solution, and controlling reducing agents in the plating solution for deposition over outlier features smaller than about five hundred nanometers and isolated by about one thousand nanometers.
摘要翻译：无电解电镀系统包括电镀液，并且控制电镀液中的还原剂，用于沉积超过约五百纳米并隔离约一千纳米的离子值特征。

4. 发明授权

US08622017B2 Electroless plating system 有权
标题翻译：无电镀系统
公开(公告)号：US08622017B2
公开(公告)日：2014-01-07
申请号：US13111859
申请日：2011-05-19
申请人： Igor Ivanov , Robert D. Tas , Shashank Ravindra Kulkarni , Ron Rulkens
发明人： Igor Ivanov , Robert D. Tas , Shashank Ravindra Kulkarni , Ron Rulkens
IPC分类号： B05C5/02
CPC分类号： C23C18/1683 , C23C18/1628 , C23C18/1682
摘要： An electroless plating system includes a plating solution, and controlling reducing agents in the plating solution for deposition over outlier features smaller than about five hundred nanometers and isolated by about one thousand nanometers.
摘要翻译：无电解电镀系统包括电镀液，并且控制电镀液中的还原剂，用于沉积超过约五百纳米并隔离大约一千纳米的离子值特征。

5. 发明授权

US07845308B1 Systems incorporating microwave heaters within fluid supply lines of substrate processing chambers and methods for use of such systems 有权
标题翻译：在基板处理室的流体供应管线内并入微波加热器的系统以及使用这种系统的方法
公开(公告)号：US07845308B1
公开(公告)日：2010-12-07
申请号：US11536429
申请日：2006-09-28
申请人： Jason Corneille , Nancy E. Gilbert , Robert D. Tas , Steven Flanders , Timothy J. Franklin , Jason R. Wright , Stephen C. Jones , Joe Laia
发明人： Jason Corneille , Nancy E. Gilbert , Robert D. Tas , Steven Flanders , Timothy J. Franklin , Jason R. Wright , Stephen C. Jones , Joe Laia
IPC分类号： B05C11/00 , B05C3/00
CPC分类号： C25D17/04 , C23C18/1632 , C23C18/1676 , H05B6/802 , H05B6/806
摘要： Systems having an in-line microwave heater to heat fluids for processing a substrate are provided. An embodiment of a system includes a microelectronic processing chamber, a reservoir for storing a fluid used to process wafers within the chamber, a supply line for transporting the fluid to the chamber, and a microwave heater arranged along the supply line. The system includes processor executable program instructions for operating the microwave heater at parameters configured to heat fluid within the supply line to a temperature greater than a fluid temperature within the reservoir, such as approximately 20° C. greater than the reservoir fluid temperature. It is noted that the inclusion of an in-line microwave heater is not limited to microelectronic fabrication systems, but may be used for any system in which heated fluids are used for processing a substrate, such as but not limited to electroplating or electroless plating systems.
摘要翻译：提供具有在线微波加热器以加热用于处理衬底的流体的系统。系统的一个实施例包括微电子处理室，用于存储用于处理室内的晶片的流体的储存器，用于将流体输送到室的供应管线和沿着供给管布置的微波加热器。该系统包括处理器可执行程序指令，用于在被配置为将供应管线内的流体加热到大于储存器内的流体温度的温度（例如比储存器流体温度大约20℃）的参数下操作微波加热器。应当注意，包括在线微波加热器不限于微电子制造系统，而是可以用于其中加热流体用于处理衬底的任何系统，例如但不限于电镀或无电电镀系统。

6. 发明授权

US06846391B1 Process for depositing F-doped silica glass in high aspect ratio structures 失效
标题翻译：在高纵横比结构中沉积F掺杂石英玻璃的方法
公开(公告)号：US06846391B1
公开(公告)日：2005-01-25
申请号：US10035773
申请日：2001-12-21
申请人： George D. Papasouliotis , Robert D. Tas , Patrick A. Van Cleemput , Bart van Schravendijk
发明人： George D. Papasouliotis , Robert D. Tas , Patrick A. Van Cleemput , Bart van Schravendijk
IPC分类号： C23C16/04 , C23C16/507 , H01L21/316 , H01L21/762 , C23C14/00 , B44C1/22 , C03C15/00 , C23C14/32 , H05H1/02
CPC分类号： C23C16/045 , C23C16/401 , C23C16/509 , H01L21/02129 , H01L21/02164 , H01L21/02274 , H01L21/31612 , H01L21/76224
摘要： A process for filling high aspect ratio gaps on substrates uses conventional high density plasma deposition processes to deposit fluorine-doped films, with an efficient sputtering inert gas, such as Ar, replaced or reduced with an inefficient sputtering inert gas such as He and/or hydrogen. By reducing the sputtering component, sidewall deposition from the sputtered material is reduced. Consequently, gaps with aspect ratios greater than 3.0:1 and spacings between lines less than 0.13 microns can be filled with low dielectric constant films without the formation of voids and without damaging circuit elements.
摘要翻译：用于在衬底上填充高纵横比间隙的方法使用常规的高密度等离子体沉积工艺沉积氟掺杂的膜，利用诸如Ar的有效溅射惰性气体（例如Ar）被替换或还原，其中诸如He和/或氢。通过减少溅射部件，减少了来自溅射材料的侧壁沉积。因此，宽高比大于3.0:1的间隙和小于0.13微米的线之间的间距可以用低介电常数膜填充而不形成空隙并且不损坏电路元件。

7. 发明申请

US20110214608A1 Electroless Plating System 有权
标题翻译：无电镀系统
公开(公告)号：US20110214608A1
公开(公告)日：2011-09-08
申请号：US13111859
申请日：2011-05-19
申请人： Igor Ivanov , Robert D. Tas , Shashank Ravindra Kulkarni , Ron Rulkens
发明人： Igor Ivanov , Robert D. Tas , Shashank Ravindra Kulkarni , Ron Rulkens
IPC分类号： B05C3/02
CPC分类号： C23C18/1683 , C23C18/1628 , C23C18/1682
摘要： An electroless plating system includes a plating solution, and controlling reducing agents in the plating solution for deposition over outlier features smaller than about five hundred nanometers and isolated by about one thousand nanometers.
摘要翻译：无电解电镀系统包括电镀液，并且控制电镀液中的还原剂，用于沉积超过约五百纳米并隔离约一千纳米的离子值特征。

8. 发明授权

US06794290B1 Method of chemical modification of structure topography 有权
标题翻译：结构形貌化学修饰方法
公开(公告)号：US06794290B1
公开(公告)日：2004-09-21
申请号：US10004386
申请日：2001-12-03
申请人： George D. Papasouliotis , Robert D. Tas
发明人： George D. Papasouliotis , Robert D. Tas
IPC分类号： H01L21311
CPC分类号： H01L21/02164 , C23C16/045 , H01L21/02274 , H01L21/31612 , H01L21/76224
摘要： A method is provided for filling high aspect ratio gaps without void formation by using a high density plasma (HDP) deposition process with a sequence of deposition and hydrogen etch steps. The first step uses an etch/dep ratio less than one to quickly fill the gap. The first step is interrupted before the opening to the gap is closed. The second step uses a hydrogen-based plasma to chemically etch the deposited material to widen the gap. The second step is stopped before corners of the elements forming the gaps are exposed. These steps can be repeated until the aspect ratio of the gap is reduced so that void-free gap-fill is possible. The etch/dep ratio and duration of each step can be optimized for high throughput and high aspect ratio gap-fill capacity.
摘要翻译：提供了一种用于通过使用具有一系列沉积和氢蚀刻步骤的高密度等离子体（HDP）沉积工艺来填充高纵横比间隙而无空隙形成的方法。第一步使用小于1的蚀刻/剥离比快速填充间隙。第一步在打开间隙之前中断。第二步使用氢基等离子体来化学蚀刻沉积的材料以扩大间隙。在形成间隙的元件的角部暴露之前停止第二步骤。可以重复这些步骤，直到间隙的纵横比减小，使得无空隙间隙填充成为可能。可以优化每个步骤的蚀刻/剥离比和持续时间，以实现高通量和高纵横比填充间隙。

9. 发明授权

US07972652B2 Electroless plating system 有权
标题翻译：无电镀系统
公开(公告)号：US07972652B2
公开(公告)日：2011-07-05
申请号：US11549644
申请日：2006-10-14
申请人： Igor Ivanov , Robert D. Tas , Shashank Ravindra Kulkarni , Ron Rulkens
发明人： Igor Ivanov , Robert D. Tas , Shashank Ravindra Kulkarni , Ron Rulkens
IPC分类号： B05D5/12 , B28B19/00 , B29B15/10 , C23C18/00 , C23C20/00 , C23C24/00 , C23C26/00 , C23C28/00 , H01C17/06 , H05K3/00
CPC分类号： C23C18/1683 , C23C18/1628 , C23C18/1682
摘要： An electroless plating system includes a plating solution, and controlling reducing agents in the plating solution for deposition over outlier features smaller than about five hundred nanometers and isolated by about one thousand nanometers.
摘要翻译：无电解电镀系统包括电镀液，并且控制电镀液中的还原剂，用于沉积超过约五百纳米并隔离约一千纳米的离子值特征。

10. 发明申请

US20090288593A1 ELECTROLESS DEPOSITION SYSTEM 有权
标题翻译：电沉积系统
公开(公告)号：US20090288593A1
公开(公告)日：2009-11-26
申请号：US11537643
申请日：2006-09-30
申请人： Ron Rulkens , Robert D. Tas , Shashank Ravindra Kulkarni , Artur Kolics , Nancy E. Gilbert
发明人： Ron Rulkens , Robert D. Tas , Shashank Ravindra Kulkarni , Artur Kolics , Nancy E. Gilbert
IPC分类号： B05C3/02
CPC分类号： C23C18/1682 , C23C18/1617 , C23C18/1619 , H05K3/187
摘要： An electroless deposition system includes a deposition solution, and saturating the deposition solution with an oxygen concentration in a range from about two thousand parts per million to about twenty thousand parts per million.
摘要翻译：无电解沉积系统包括沉积溶液，并使沉积溶液饱和，氧浓度在约百万分之几到百万分之一的范围内。

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