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1. 发明专利

JP2001051724A FLOW RATE ABNORMALITY DETECTING METHOD OF PRESSURE TYPE FLOW PATE CONTROLLER 失效
公开(公告)号：JP2001051724A
公开(公告)日：2001-02-23
申请号：JP22602399
申请日：1999-08-10
申请人： OMI TADAHIRO , IIDA SEIICHI , TOKYO ELECTRON LTD , FUJIKIN KK
发明人： OMI TADAHIRO , IIDA SEIICHI , KAGATSUME SATORU , HIROSE JUN , FUKAZAWA KAZUO , KOIZUMI HIROSHI , NAGAOKA HIDEKI , UNO TOMIO , NISHINO KOJI , IKEDA SHINICHI , DOI RYOSUKE , IDETA EIJI
IPC分类号： G01F1/36 , F16K37/00 , G05B23/02 , G05D7/06
摘要： PROBLEM TO BE SOLVED: To give notice of flow rate abnormality due to the clogging of an orifice with simple constitution by measuring the amplitude of varying pressure of upstream-side pressure in response to the opening and closing of a control valve and giving notice of the clogging of the orifice when the pressure amplitude becomes smaller than a limit amplitude. SOLUTION: The amplitude of the varying pressure of the upstream-side pressure is measured in response to the opening and closing of the control valve and when the pressure amplitude becomes smaller than the limit amplitude, notice of the clogging of the orifice is given. When a clogging detection start signal is inputted from an external circuit 44, a CPU outputs a signal to check circuit 31, which outputs a set flow rate QS(t)=QSO+ΔQS composed of a stationary set flow rate QSO and a signal ΔQS for examination. This signal controls a driving part 8 through an amplifier circuit 33 to open and close the control valve CV. Namely, the examining circuit 31 while holding an orifice passing flow rate at the stationary flow rate QSO checks the clogging of the orifice with the signal ΔQS for examination.

2. 发明专利

JP2000322130A METHOD FOR VARIABLE FLUID FLOW RATE CONTROL BY FLOW FACTOR AND ITS DEVICE 失效
公开(公告)号：JP2000322130A
公开(公告)日：2000-11-24
申请号：JP12910999
申请日：1999-05-10
申请人： FUJIKIN KK , OMI TADAHIRO , TOKYO ELECTRON LTD
发明人： OMI TADAHIRO , MORIMOTO AKIHIRO , UNO TOMIO , IKEDA SHINICHI , DOI RYOSUKE , NISHINO KOJI , IDETA EIJI , MATSUMOTO ATSUSHI , UENOYAMA TOYOMI , YAMAJI MICHIO , HIROSE TAKASHI , KAGATSUME SATORU , HIROSE JUN , FUKAZAWA KAZUO , KOIZUMI HIROSHI , NAGAOKA HIDEKI
IPC分类号： G01F1/42 , G05D7/06
摘要： PROBLEM TO BE SOLVED: To obtain the method for performing high-precision flow rate control over different kinds of gas by one flow rate controller by calculating a factor under specific conditions and calculating the flow rate of another gas kind when the gas kind is circulated through the same orifice under conditions of the same upstream pressure and the same upstream temperature on condition that the calculated flow rate of one gas kind is specific. SOLUTION: Flow factors FF is calculated by gas kinds from FF=(k/γs)(2/(κ+1))1/(κ-1)(κ/((κ+1)R))1/2 and on condition that the calculated flow rate of a gas kind A is QA, the flow rate QB of a gas kind B is calculated from QB=(FFB/FFA)QA when the gas kind B is circulated through the same orifice under the conditions of the same upstream side pressure and the same upstream temperature. Here, γs is the density of gas in a standard state, κ is the specific heat ratio of the gas, R is the gas constant, (k) is a proportion constant which does not depend upon the gas kind, FFA is the flow factor of the gas kind A, and FFB is the flow factor of the gas kind B.

3. 发明专利

JP2001050835A FIXING STRUCTURE OF PRESSURE DETECTOR 失效
公开(公告)号：JP2001050835A
公开(公告)日：2001-02-23
申请号：JP22236799
申请日：1999-08-05
申请人： OMI TADAHIRO , FUJIKIN KK , TOKYO ELECTRON LTD
发明人： OMI TADAHIRO , HIROSE TAKASHI , IDETA EIJI , IKEDA SHINICHI , DOI RYOSUKE , NISHINO KOJI , YOSHIKAWA KAZUHIRO , KAGATSUME SATORU , HIROSE JUN , FUKAZAWA KAZUO , KOIZUMI HIROSHI , NAGAOKA HIDEKI
IPC分类号： G01L9/04 , G01L9/00 , G01L19/00 , G01L19/04 , G01L19/06 , G01L19/14
摘要： PROBLEM TO BE SOLVED: To obtain a structure for fixing a diaphragm type pressure detector to a conduit or an apparatus in which a diaphragm is prevented from being distorted with a stress applied to the pressure detector and the output characteristics or temperature characteristics are varied significantly after the pressure detector is built in. SOLUTION: A pressure detector comprising a combination of a diaphragm base 4 having a diaphragm 3 and a sensor base incorporating a sensor element actuated by displacement of the diaphragm 3 is inserted through a gasket into the insertion hole in a fixing metal body fixed to a conduit or an apparatus and the pressure detector is secured while being pressed hermetically by means of a retaining member inserted into the insertion hole from above. In such a fixing structure of pressure detector, the retaining member is abutted against the upper surface at the body part of the diaphragm base 4 and a gasket is abutted against the lower surface thereof. Shallow grooves 18a, 18b are made on the inside of the part where the retaining member abuts against the upper surface at the body part and a shallow groove is made on the inside of the part where the gasket abuts against the lower surface at the body part. Strain generated by pressing the retaining member is absorbed by both shallow grooves 18a, 18b.

4. 发明授权

US6422264B2 Parallel divided flow-type fluid supply apparatus, and fluid-switchable pressure-type flow control method and fluid-switchable pressure-type flow control system for the same fluid supply apparatus 有权
标题翻译：平行分流式流体供给装置和流体切换式压力式流量控制方法以及用于同一流体供给装置的流体切换型压力式流量控制系统
公开(公告)号：US6422264B2
公开(公告)日：2002-07-23
申请号：US73464000
申请日：2000-12-13
申请人： FUJIKIN KK , OHMI TADAHIRO , TOKYO ELECTRON LTD
发明人： OHMI TADAHIRO , KAGATSUME SATOSHI , SUGIYAMA KAZUHIKO , MINAMI YUKIO , NISHINO KOUJI , DOHI RYOUSUKE , YONEHANA KATSUNORI , IKEDA NOBUKAZU , YAMAJI MICHIO , HIROSE JUN , FUKAZAWA KAZUO , KOIZUMI HIROSHI , NAGAOKA HIDEKI , MORIMOTO AKIHIRO , UNO TOMIO , IDETA EIJI , MATSUMOTO ATSUSHI , UENOYAMA TOYOMI , HIROSE TAKASHI
IPC分类号： G05D7/06
CPC分类号： G05D7/0658 , G05D7/0664 , Y10S438/935 , Y10T137/0396 , Y10T137/7759 , Y10T137/7761 , Y10T137/86389 , Y10T137/87877 , Y10T137/87917
摘要： A fluid supply apparatus with a plurality of flow lines branching out from one pressure regulator with the flow lines arranged in parallel and constructed so that opening or closing one flow passage will have no transient effect on the steady flow of the other flow passages. Each flow passage is provided with a time delay-type mass flow controller MFC so that when one closed fluid passage is opened, the mass flow controller on that flow passage reaches a set flow rate Qs in a specific delay time DELTAt from the starting point.The invention includes a method and an apparatus in which a plurality of gas types can be controlled in flow rate with high precision by one pressure-type flow control system.
摘要翻译：一种流体供给装置，具有从一个压力调节器分支出的多个流动管线，流动线平行布置并构造成使得打开或关闭一个流动通道对其它流动通道的稳定流动将没有暂时的影响。每个流路设置有时间延迟型质量流量控制器MFC，使得当一个封闭流体通道打开时，该流路上的质量流量控制器在起始点的特定延迟时间DELTAt中达到设定流量Qs。本发明包括通过一个压力式流量控制系统以高精度控制多种气体类型的方法和装置。

5. 发明公开

EP1096351A4 PARALLEL BYPASS TYPE FLUID FEEDING DEVICE, AND METHOD AND DEVICE FOR CONTROLLING FLUID VARIABLE TYPE PRESSURE SYSTEM FLOW RATE USED FOR THE DEVICE 审中-公开
标题翻译：旁路类型和调节压力系统与可变液体压力流量的方法和设备布置成平行液装置这FLÜSSIGLEITSSPEISEVORRICHTUNGUSED
公开(公告)号：EP1096351A4
公开(公告)日：2004-12-15
申请号：EP00913087
申请日：2000-04-03
申请人： FUJIKIN KK , TOKYO ELECTRON LTD , OHMI TADAHIRO
发明人： OHMI TADAHIRO , KAGATSUME SATOSHI , SUGIYAMA KAZUHIKO , MINAMI YUKIO , NISHINO KOUJI , DOHI RYOUSUKE , YONEHANA KATSUNORI , IKEDA NOBUKAZU , YAMAJI MICHIO , HIROSE JUN , FUKAZAWA KAZUO , KOIZUMI HIROSHI , NAGAOKA HIDEKI , MORIMOTO AKIHIRO , UNO TOMIO , IDETA EIJI , MATSUMOTO ATSUSHI , UENOYAMA TOYOMI , HIROSE TAKASHI
IPC分类号： G05D7/06
CPC分类号： G05D7/0658 , G05D7/0664 , Y10S438/935 , Y10T137/0396 , Y10T137/7759 , Y10T137/7761 , Y10T137/86389 , Y10T137/87877 , Y10T137/87917
摘要： A fluid feeding device having a plurality of flow paths disposed in parallel with each other starting at a regulator for pressure regulation, wherein a mass flow controller for flow control or a pressure system flow control device is disposed in each flow path so that the opening and closing operations for fluid supply in each flow path do not provide a transient variation in a stable supply to the other flow paths and, when the fluid supply in a flow path is changed from close to open, a set flow rate is reached a specified delay time after the start of the operation of the mass flow controller in that flow path.
摘要翻译：用的流线从一个调节器，用于压力调整分支出来的多个流体供给装置中，流线平行地布置，worin的量度取，DASS模具手术，也就是，开口或一个流路的开闭将没有在其它流动通道的稳流瞬态效应。为了这个目的，每个流动通道设置有一个时间延迟型质量流量控制器MFC所以没有当一个封闭流体通道打开时，质量流量控制器上没有流动通道达在一个特定的延迟时间ΔT的一组流量Qs 从起点。这样提供了一种方法和用于其中的气体类型的多元性可与精度高流速通过一个压力式流量控制装置来控制上述装置的速率。为了做到端，用于计算气体的流动的公式理论上推导做了与压力比不低于临界压力比更高流动。从做过公式，则流程因数被定义，所以做了式可以被应用到许多用流动因素气体类型。该方法包括：在下游侧计算通过传递到孔口雅丁式QC = KP1（K =常数）具有压力P1的气体的QC流量上设置节流孔上游侧的两次或更多次高于压力P2 ，worin流量因数FF为每种气体的计算如下： FF =（K /伽马S）A2 /（卡帕+ 1）U <1 /（卡帕-1）>是κ/ A（卡帕 + 1）RUU <1.2> 和worin，如果气体类型A的计算的流速是QA，并且，当将B型气体被允许在相同的压力下，通过相同的孔中流动的上游侧并在上游侧相同的温度，流率QB的计算公式如下： QB =（FFB / FFA）QA 其中YS =标准状态的气体的浓度; Kappa值=气体的比热的比值; R为气体的=常数; K =比例常数不依赖于气体的类型; FFA =气体类型A的流动系数; 气体类型B. 的和FFB =流量系数

6. 发明专利

JPH03283612A METHOD FOR CARRIER 失效
公开(公告)号：JPH03283612A
公开(公告)日：1991-12-13
申请号：JP8426090
申请日：1990-03-30
申请人： TOKYO ELECTRON LTD
发明人： FUKAZAWA KAZUO
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/677 , H01L21/68
摘要： PURPOSE:To reduce rolling up of a particle due to flow-in of gas inside a container by controlling gas supply so that gas flow rate at an initial time is less than that at a following period when rising a pressure from negative pressure state. CONSTITUTION:Vacuum pumps 16, 17 are connected to load lock chambers 6, 10 and inert gas is supplied thereto from gas supply sources 21, 22 through flow variable means 23, 24. The flow rate changeable means 23, 24 are set to change flow rate linearly to a time from vacuum state until a fixed period passes, to reduce flow rate at an initial time of a large differential pressure, to control it to a fixed flow rate until a pressure inside the load lock chambers 6, 10 attains near an atmospheric pressure after a fixed time passed, and to abruptly reduce flow rate at a point of time that a pressure attains near an atmospheric pressure to realize small flow rate. If flow rate is controlled in this way, pressure variation at an initial time of gas injection from vacuum state forms quadratic curve and restricts flow rate small. Whirl up of a particle can be reduced in this way.

7. 发明专利

JPH01279783A ETCHING DEVICE 失效
公开(公告)号：JPH01279783A
公开(公告)日：1989-11-10
申请号：JP10979088
申请日：1988-05-02
申请人： TOKYO ELECTRON LTD
发明人： KAGATSUME SATORU , FUKAZAWA KAZUO
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To enable etching treatment with good uniformity by adjusting the height of an upper electrode by means of a shim at the time of executing etching by rising a lower electrode on which a substrate to be treated is installed and maintaining the prescribed spacing between said electrode and the upper electrode. CONSTITUTION:A semiconductor wafer 1 is imposed on filter pins 23 of the lower electrode body 20 and is risen by driving of a lifting mechanism 19 until the wafer comes into contact with a clamping ring 35 in a reaction treatment chamber. The wafer is further risen and the prescribed pressing pressure is set to set the gap between the lower electrode body 20 and the upper electrode 40 to the prescribed spacing. The gap can be set with high reliability and good reproducibility by previously inserting the shim 47 of a desired thickness to the rear surface of the ring projected annularly in a lateral direction from the outside circumference at the top end of the above-mentioned upper electrode body 37. A uniform discharge is generated between the upper electrode 40 and the lower electrode 20 and the etching treatment with good uniformity is executed when high-frequency electric power is impressed between these electrodes from a high-frequency power supply 48 and the wafer 1 is etched by the reactive gas converted to plasma with the above-mentioned constitution.

8. 发明专利

JP2004045424A Mounting structure of pressure detector 审中-公开
公开(公告)号：JP2004045424A
公开(公告)日：2004-02-12
申请号：JP2003330204
申请日：2003-09-22
申请人： Fujikin Inc , Tadahiro Omi , Tokyo Electron Ltd , 大見忠弘 , 東京エレクトロン株式会社 , 株式会社フジキン
发明人： OMI TADAHIRO , HIROSE TAKASHI , IDETA EIJI , IKEDA SHINICHI , DOI RYOSUKE , NISHINO KOJI , YOSHIKAWA KAZUHIRO , KAGATSUME SATORU , HIROSE JUN , FUKAZAWA KAZUO , KOIZUMI HIROSHI , NAGAOKA HIDEKI
IPC分类号： G01L19/00
摘要： PROBLEM TO BE SOLVED: To prevent fluctuation of an output characteristic or a temperature characteristic caused by distortion of a diaphragm by stress when a diaphragm type pressure detector is integrated into a conduit.
SOLUTION: In this mounting structure of the pressure detector, the pressure detector formed by fixing integrally a diaphragm base equipped with a diaphragm and a sensor base having a built-in sensor element operated by displacement of the diaphragm is inserted through a gasket into an insertion hole of a fixture body fixed on a pipe conduit or a mechanical device, and the pressure detector is pressed and fixed gastightly by a presser member inserted into the insertion hole from the upper side. In the structure, the presser member abuts on the body part upper face of the diaphragm base and the gasket abuts on the body part lower face thereof respectively, and a shallow groove is formed in a ring shape on the inside position of the abutting part with the presser member on the body part upper face and a shallow groove is formed in a ring shape on the inside position of the abutting part with the gasket on the body part lower face, and distortion generated by pressing by the presser member is absorbed by both shallow grooves.
COPYRIGHT: (C)2004,JPO

9. 发明专利

JPH06333850A PLASMA PROCESSING DEVICE 失效
公开(公告)号：JPH06333850A
公开(公告)日：1994-12-02
申请号：JP14003193
申请日：1993-05-19
申请人： TOKYO ELECTRON LTD , TEL YAMANISHI KK
发明人： IIMURO SHUNICHI , FUKAZAWA KAZUO , MIURA YUTAKA , HOSODA SHOZO
IPC分类号： C23C14/34 , C23C16/50 , C23C16/509 , C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , H05H1/46
摘要： PURPOSE:To provide a plasma processing device which suppresses plasma discharge in the header by increasing resistance at the time of flowing out processing gas. CONSTITUTION:A plasma processing device is permitted to perform plasma processing on a subject W held by an electrode 22 to be processed while suppling a processing space S with processing gas through a first gas hole 70 formed on an electrode 20, which faces the electrode 22 and is provided with a processing gas suppling header 51. A resistance providing means 72 is provided so as to provide processing gas which flows out from the header with resistance. Thus, the atmosphere in the header is allowed to be in the conditions outside of the electric discharge area of the Paschen's law, and slight plasma discharge in the header is prevented even when the process pressure is 0.5Torr or less.

10. 发明专利

JPH02224231A PLASMA PROCESSOR 失效
公开(公告)号：JPH02224231A
公开(公告)日：1990-09-06
申请号：JP3901889
申请日：1989-02-16
申请人： TOKYO ELECTRON LTD
发明人： FUKAZAWA KAZUO
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To uniform the distribution of plasma density in the substance to be processed by providing the ends, on the processing chamber side, of exhaust gas tubes, which connect a processing chamber with a vacuum pump, in plural numbers such that they surround a semiconductor substrate being arranged. CONSTITUTION:A grounded disc-shaped lower electrode 3 is fixed to the top of a supporting member 1 which is engaged with the rotary shaft of a motor, and above that a disc-shaped upper electrode 5, which is connected to a high frequency power source 4, is provided opposite to the lower electrode. The upper electrode 5 is of hollow structure, and has a number of gas passage holes 7 at the surface facing the lower electrode 3, and is coupled to a gas supply tube 9. Around the lower electrode 3, a processing chamber wall 19 made of aluminum is provided, which forms a lower housing, and below the processing chamber wall 9, for example two pieces of exhaust gas tubes 49 and 50 are provided in positions which are opposed 180 deg., and the exhaust gas tubes 49 and 50 join each other in the middle and it is coupled to a vacuum pump 52 through a pressure control valve 51. Hereby, maldistribution of exhaust gas flow inside the processing chamber is prevented, and the plasma treatment of the substance to be processed can be made uniform.

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