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1. 发明授权

US5861086A Method and apparatus for sputter etch conditioning a ceramic body 失效
标题翻译：用于溅射蚀刻调节陶瓷体的方法和装置
公开(公告)号：US5861086A
公开(公告)日：1999-01-19
申请号：US814188
申请日：1997-03-10
申请人： Nitin Khurana , Vince Burkhart , Steve Sansoni , Vijay Parkhe , Eugene Tzou
发明人： Nitin Khurana , Vince Burkhart , Steve Sansoni , Vijay Parkhe , Eugene Tzou
IPC分类号： C04B41/80 , C23C14/34 , C23F4/00 , H01J37/32 , H01J37/34 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/683
CPC分类号： H01J37/32862 , H01J37/32082 , H01J37/34
摘要： A method and apparatus for conditioning a surface of a ceramic body in a process chamber when the process chamber has a vacuum pump, an anode and a cathode. The conditioning method consists of pumping the process chamber down to a vacuum with the vacuum pump, introducing a gas into the chamber, energizing the anode and cathode with RF power to ignite the gas into a plasma, sputter etching the surface with ions from the plasma to remove contaminants therefrom. The method is accomplished either within a process chamber to condition, in situ, a ceramic chuck or within a cleaning chamber to condition any form of ceramic body or component.
摘要翻译：一种用于在处理室具有真空泵，阳极和阴极时调节处理室中陶瓷体表面的方法和装置。调节方法包括将处理室抽真空至真空泵，将气体引入室内，用RF功率激励阳极和阴极，将气体点燃到等离子体中，用等离子体离子溅射刻蚀表面去除污染物。该方法可以在处理室内完成，以便现场处理陶瓷卡盘或在清洁室内调节任何形式的陶瓷体或部件。

2. 发明授权

US06395157B2 Method and apparatus for sputter etch conditioning a ceramic body 失效
标题翻译：用于溅射蚀刻调节陶瓷体的方法和装置
公开(公告)号：US06395157B2
公开(公告)日：2002-05-28
申请号：US09159009
申请日：1998-09-23
申请人： Nitin Khurana , Vince Burkhart , Steve Sansoni , Vijay Parkhe , Eugene Tzou
发明人： Nitin Khurana , Vince Burkhart , Steve Sansoni , Vijay Parkhe , Eugene Tzou
IPC分类号： C23C1434
CPC分类号： H01J37/32862 , H01J37/32082 , H01J37/34
摘要： A method and apparatus for conditioning a surface of a ceramic body in a process chamber when the process chamber has a vacuum pump, an anode and a cathode. The conditioning method consists of pumping the process chamber down to a vacuum with the vacuum pump, introducing a gas into the chamber, energizing the anode and cathode with RF power to ignite the gas into a plasma, sputter etchinq the surface with ions from the plasma to remove contaminants therefrom. The method is accomplished either within a process chamber to condition, in situ, a ceramic chuck or within a cleaning chamber to condition any form of ceramic body or component.
摘要翻译：一种用于在处理室具有真空泵，阳极和阴极时调节处理室中陶瓷体表面的方法和装置。调节方法包括将真空泵泵送到真空，将气体引入室内，用RF功率激励阳极和阴极，将气体点燃到等离子体中，用等离子体离子溅射刻蚀表面去除污染物。该方法可以在处理室内完成，以便现场处理陶瓷卡盘或在清洁室内调节任何形式的陶瓷体或部件。

3. 发明授权

US06423384B1 HDP-CVD deposition of low dielectric constant amorphous carbon film 失效
标题翻译：低介电常数无定形碳膜的HDP-CVD沉积
公开(公告)号：US06423384B1
公开(公告)日：2002-07-23
申请号：US09339888
申请日：1999-06-25
申请人： Kasra Khazeni , Eugene Tzou , Zhengquan Tan
发明人： Kasra Khazeni , Eugene Tzou , Zhengquan Tan
IPC分类号： H05H124
CPC分类号： H01L21/3146 , C23C16/26 , H01L21/0276 , H01L21/0332
摘要： The present invention generally provides a method for depositing a low dielectric constant amorphous carbon film on a substrate or other workpiece using high density plasma chemical vapor deposition (HDP-CVD) techniques. Specifically, the present invention provides a method for forming an amorphous carbon film having a low dielectric constant of less than about 3.0 and a high thermal stability at a temperature of at least about 400° C. In a preferred embodiment, the film is deposited using methane (CH4) and argon in a HDP-CVD reactor. The amorphous carbon film formed according to the invention is useful for many applications in ultra large scale integration (ULSI) structures and devices, such as for example, an inter-metal dielectric material and an anti-reflective coating useful for patterning sub-micron interconnect features.
摘要翻译：本发明通常提供了使用高密度等离子体化学气相沉积（HDP-CVD）技术在衬底或其它工件上沉积低介电常数非晶碳膜的方法。具体地说，本发明提供一种形成低介电常数小于约3.0的非晶碳膜和在至少约400℃的温度下的高热稳定性的方法。在优选实施例中，使用甲烷（CH4）和氩气。根据本发明形成的无定形碳膜可用于超大规模集成（ULSI）结构和器件中的许多应用，例如金属间电介质材料和用于构图亚微米互连的抗反射涂层特征。

4. 发明授权

US06211065B1 Method of depositing and amorphous fluorocarbon film using HDP-CVD 失效
标题翻译：使用HDP-CVD沉积非晶碳氟膜的方法
公开(公告)号：US06211065B1
公开(公告)日：2001-04-03
申请号：US08948799
申请日：1997-10-10
申请人： Ming Xi , Eugene Tzou , Lie-Yea Cheng , Turgut Sahin , Yaxin Wang
发明人： Ming Xi , Eugene Tzou , Lie-Yea Cheng , Turgut Sahin , Yaxin Wang
IPC分类号： C23C1622
CPC分类号： B05D1/62 , C23C16/0272 , C23C16/0281 , C23C16/26
摘要： The present invention provides a method of depositing an amorphous fluorocarbon film using a high bias power applied to the substrate on which the material is deposited. The invention contemplates flowing a carbon precursor at rate and at a power level so that equal same molar ratios of a carbon source is available to bind the fragmented fluorine in the film thereby improving film quality while also enabling improved gap fill performance. The invention further provides for improved adhesion of the amorphous fluorocarbon film to metal surfaces by first depositing a metal or TiN adhesion layer on the metal surfaces and then stuffing the surface of the deposited adhesion layer with nitrogen. Adhesion is further improved by coating the chamber walls with silicon nitride or silicon oxynitride.
摘要翻译：本发明提供了一种使用施加到其上沉积材料的衬底的高偏置功率沉积非晶碳氟化合物膜的方法。本发明考虑了以速率和功率水平流动碳前体，使得碳源的相等摩尔比可用于结合薄膜中的碎裂氟，从而提高膜质量，同时还实现改进的间隙填充性能。本发明进一步提供了通过首先在金属表面上沉积金属或TiN粘附层，然后用氮气填充沉积的粘合层的表面来改善非晶碳氟化合物膜对金属表面的粘合性。通过用氮化硅或氮氧化硅涂覆室壁来进一步改善粘合性。

5. 发明授权

US06939808B2 Undoped and fluorinated amorphous carbon film as pattern mask for metal etch 失效
标题翻译：未掺杂和氟化无定形碳膜作为金属蚀刻的图案掩模
公开(公告)号：US06939808B2
公开(公告)日：2005-09-06
申请号：US10211453
申请日：2002-08-02
申请人： Eugene Tzou , Jie Yuan , Yan Ye
发明人： Eugene Tzou , Jie Yuan , Yan Ye
IPC分类号： H01L21/033 , H01L21/314 , H01L21/3213 , H01L21/302
CPC分类号： H01L21/02115 , H01L21/02274 , H01L21/02337 , H01L21/0332 , H01L21/3146 , H01L21/32139
摘要： A method for etching a metal layer formed on a substrate to form a metal line, using an amorphous carbon layer as a pattern mask. One embodiment of the method of the invention etches a metal layer formed on a substrate, for forming a metal line, by depositing an amorphous carbon layer on the metal layer, patterning the amorphous carbon layer to provide a pattern mask on the metal layer, thus exposing portions of said metal layer; and etching the exposed portions of the metal layer, to form a metal line. In an embodiment, the metal layer comprises a copper layer.
摘要翻译：一种使用无定形碳层作为图案掩模蚀刻形成在基板上以形成金属线的金属层的方法。本发明方法的一个实施方案是通过在金属层上沉积无定形碳层来蚀刻形成在基底上的金属层，以形成金属线，图案化无定形碳层以在金属层上提供图案掩模，从而暴露所述金属层的部分; 并蚀刻金属层的暴露部分，形成金属线。在一个实施例中，金属层包括铜层。

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