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1. 发明授权

US4767494A Preparation process of compound semiconductor 失效
标题翻译：化合物半导体的制备工艺
公开(公告)号：US4767494A
公开(公告)日：1988-08-30
申请号：US909287
申请日：1986-09-19
申请人： Naoki Kobayashi , Toshiki Makimoto , Yoshiji Horikoshi
发明人： Naoki Kobayashi , Toshiki Makimoto , Yoshiji Horikoshi
IPC分类号： C30B25/02 , H01L21/205 , H01L21/365
CPC分类号： C30B25/02 , C30B29/40 , C30B29/48 , C30B29/68 , H01L21/02395 , H01L21/02463 , H01L21/02505 , H01L21/02546 , H01L21/02551 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： A compound semiconductor thin film is formed by growing a plurality of molecular layers one over another. According to the present invention, while a carrier gas and a small quantity of hydride containing an element in Group V or VI are normally flowed, an organometallic compound which is diluted with hydrogen and which contains an element in Group III or II and a hydride which is diluted with hydrogen and which contains an element in Group V or VI are alternately introduced over a substrate so that an atomic layer of an element in Group III or II and an atomic layer of an element in Group V or VI are alternately grown over the substrate. According to this method, grown layers having a high degree of purity can be obtained. A portion such as a Ga-Ga two-layer structure formed in the growth of a surface of an element in Group III or II can easily be eliminated by the introduction of a hydrogen halide so that the surface defects and deep levels are significantly decreased and perfect crystals can be obtained. According to the present invention, a high-concentration doping of a III-V compound semiconductor becomes possible. The method of the present invention is advantageous in the fabrication of high-speed FETs and multi-quantum-well lasers using compound semiconductors.
摘要翻译：化合物半导体薄膜通过使多个分子层彼此生长而形成。根据本发明，载体气体和少量含有第V或VI族元素的氢化物通常流动，用氢稀释并含有III或II族元素的有机金属化合物和氢化物用氢稀释，并且含有V或VI族中的元素交替引入衬底上，使得III或II族元素的原子层和V或VI族元素的原子层交替生长在基质。根据该方法，可以得到高纯度的生长层。通过引入卤化氢可以容易地消除在III或II族元素的表面生长中形成的Ga-Ga两层结构的部分，使得表面缺陷和深度水平显着降低，可以获得完美的晶体。根据本发明，III-V族化合物半导体的高浓度掺杂是可能的。本发明的方法在制造使用复合半导体的高速FET和多量子阱激光器方面是有利的。

2. 发明授权

US4829022A Method for forming thin films of compound semiconductors by flow rate modulation epitaxy 失效
标题翻译：通过流速调制外延形成化合物半导体薄膜的方法
公开(公告)号：US4829022A
公开(公告)日：1989-05-09
申请号：US88641
申请日：1987-08-05
申请人： Naoki Kobayashi , Hideo Sugiura , Yoshiji Horikoshi
发明人： Naoki Kobayashi , Hideo Sugiura , Yoshiji Horikoshi
IPC分类号： C30B23/02 , H01L21/203 , H01L21/205
CPC分类号： H01L21/02505 , C30B23/02 , C30B29/68 , H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/02631 , Y10S148/065 , Y10S148/072 , Y10S148/11 , Y10S148/16 , Y10S148/169
摘要： A method of forming a III-V semiconductor on the surface of a substrate which is placed in a vacuum chamber and is heated, by supplying one element of Group III and one element of Group V of the periodic table in the form of atoms or molecules to the surface of the substrate. The supply of the element of Group V is decreased to a small quantity insufficient to form a III-V compound semiconductor at least at one period of the growth of the III-V compound, and the element of Group V in the small quantity and the element of Group III are supplied to the surface of the substrate. This method makes it possible to grow III-V compound epitaxial layers which have a high degree of purity and fewer crystal defects and in which surfaces and the interfaces of the heterojunctions are flat on an atomic scale, at a wide temperature range. The present invention can be used for the fabrication of various optical devices and super-high-speed electronic devices.
摘要翻译： PCT No.PCT / JP86 / 00623 Sec。 371日期1987年8月5日 102（e）日期1987年8月5日PCT申请日1986年12月9日PCT公布。公开号WO87 / 03740 日期：1987年6月18日。一种在衬底的表面上形成III-V半导体的方法，该衬底的表面放置在真空室中，并通过提供元素周期表中的III族元素和V族元素以原子或分子的形式存在于基底表面。至少在III-V族化合物生长的至少一个时期，V族元素的供给量减少到不足以形成III-V族化合物半导体的量，而V族的元素少量，将III族元素供给到基板的表面。该方法使得可以在宽的温度范围内生长具有高纯度和更少的晶体缺陷的III-V族化合物外延层，并且其中异质结的表面和界面在原子尺度上是平坦的。本发明可用于各种光学器件和超高速电子器件的制造。

3. 发明授权

US06667498B2 Nitride semiconductor stack and its semiconductor device 有权
公开(公告)号：US06667498B2
公开(公告)日：2003-12-23
申请号：US10163698
申请日：2002-06-05
申请人： Toshiki Makimoto , Kazuhide Kumakura , Naoki Kobayashi
发明人： Toshiki Makimoto , Kazuhide Kumakura , Naoki Kobayashi
IPC分类号： H01L310328
CPC分类号： H01L33/32 , H01L29/2003 , H01L29/66318 , H01L29/7371
摘要： A transistor structure is implemented which can achieve high current gain by causing electrons injected from an emitter to reach a collector. An InGaN graded layer, which is interposed between a p-type InGaN layer and an n-type GaN layer, includes an In composition that varies from 0% to 10%. A bandgap of the thin film structure is gradually reduced from the substrate side to the surface side. An AlN buffer layer is grown on an SiC substrate by 100 nm thick, followed by growing a Si-doped GaN layer used for forming an ohmic electrode. A Si-doped GaN layer (n-type GaN layer) is grown thereon, followed by growing an InGaN layer whose In composition is varied, and by growing, an Mg-doped InGaN (p-type GaN layer), thereby fabricating a heterojunction diode.

4. 发明申请

US20050224831A1 P-type nitride semiconductor structure and bipolar transistor 有权
标题翻译： P型氮化物半导体结构和双极晶体管
公开(公告)号：US20050224831A1
公开(公告)日：2005-10-13
申请号：US10516380
申请日：2004-01-06
申请人： Toshiki Makimoto , Kazuhide Kumakura , Naoki Kobayashi
发明人： Toshiki Makimoto , Kazuhide Kumakura , Naoki Kobayashi
IPC分类号： H01L21/285 , H01L21/331 , H01L29/20 , H01L29/737 , H01L33/00
CPC分类号： H01L29/66318 , H01L21/28575 , H01L29/2003 , H01L29/7371
摘要： A nitride semiconductor structure is provided which greatly improves ohmic characteristics by repairing process damage by regrowing an indium-containing p-type nitride semiconductor on a p-type nitride semiconductor having the process damage. In addition, a nitride semiconductor bipolar transistor is provided which can greatly improve its current gain and offset voltage. The structure includes an indium-containing p-type nitride semiconductor layer on a p-type nitride semiconductor processed by etching. The bipolar transistor, which has a base layer composed of a p-type nitride semiconductor, has an indium-containing p-type InGaN base layer regrown on a surface of a p-type InGaN base layer exposed by etching an emitter layer.
摘要翻译：提供了一种氮化物半导体结构，其通过在具有工艺损伤的p型氮化物半导体上重新生长含铟p型氮化物半导体来修复工艺损伤而极大地改善欧姆特性。此外，提供可以大大提高其电流增益和偏移电压的氮化物半导体双极晶体管。该结构包括通过蚀刻处理的p型氮化物半导体上的含铟p型氮化物半导体层。具有由p型氮化物半导体构成的基极层的双极晶体管在通过蚀刻发射极层而露出的p型InGaN基底层的表面上再生长含有铟的p型InGaN基极层。

5. 发明授权

US07804106B2 P-type nitride semiconductor structure and bipolar transistor 有权
标题翻译： P型氮化物半导体结构和双极晶体管
公开(公告)号：US07804106B2
公开(公告)日：2010-09-28
申请号：US10516380
申请日：2004-01-06
申请人： Toshiki Makimoto , Kazuhide Kumakura , Naoki Kobayashi
发明人： Toshiki Makimoto , Kazuhide Kumakura , Naoki Kobayashi
IPC分类号： H01L33/00
CPC分类号： H01L29/66318 , H01L21/28575 , H01L29/2003 , H01L29/7371
摘要： A nitride semiconductor structure is provided which greatly improves ohmic characteristics by repairing process damage by regrowing an indium-containing p-type nitride semiconductor on a p-type nitride semiconductor having the process damage. In addition, a nitride semiconductor bipolar transistor is provided which can greatly improve its current gain and offset voltage. The structure includes an indium-containing p-type nitride semiconductor layer on a p-type nitride semiconductor processed by etching. The bipolar transistor, which has a base layer composed of a p-type nitride semiconductor, has an indium-containing p-type InGaN base layer regrown on a surface of a p-type InGaN base layer exposed by etching an emitter layer.
摘要翻译：提供了一种氮化物半导体结构，其通过在具有工艺损伤的p型氮化物半导体上重新生长含铟p型氮化物半导体来修复工艺损伤而极大地改善欧姆特性。此外，提供可以大大提高其电流增益和偏移电压的氮化物半导体双极晶体管。该结构包括通过蚀刻处理的p型氮化物半导体上的含铟p型氮化物半导体层。具有由p型氮化物半导体构成的基极层的双极晶体管在通过蚀刻发射极层而露出的p型InGaN基底层的表面上再生长含有铟的p型InGaN基极层。

6. 发明授权

US09493683B2 Method of producing a chloroprene-based polymer, polychloroprene latex and adhesive composition 有权
标题翻译：生产氯丁二烯类聚合物，聚氯丁二烯胶乳和粘合剂组合物的方法
公开(公告)号：US09493683B2
公开(公告)日：2016-11-15
申请号：US13382837
申请日：2010-07-08
申请人： Naoki Kobayashi , Mikio Konno , Daisuke Nagao , Yoshihiro Mashiko , Toshiaki Otsu
发明人： Naoki Kobayashi , Mikio Konno , Daisuke Nagao , Yoshihiro Mashiko , Toshiaki Otsu
IPC分类号： C08L11/02 , C08L11/00 , C09J111/02 , C08F2/24 , C08F2/22 , C08F2/26 , C08F36/18
CPC分类号： C09J111/02 , C08F2/22 , C08F2/24 , C08F2/26 , C08F36/18
摘要： Provided is a polychloroprene latex extremely superior in adhesion properties.According to the present invention, chloroprene or a mixture of chloroprene and a monomer copolymerizable with chloroprene is polymerized in the presence of a surfactant in an aqueous medium, in which the surfactant's concentration is lower than its critical micelle concentration (CMC) to obtain a polychloroprene latex. The polychloroprene latex produced according to the present invention is extremely superior in adhesion properties and others and give a smaller amount of deposits during production.
摘要翻译：根据本发明，氯丁二烯或可与氯丁二烯共聚的单体的混合物在表面活性剂存在下在水性介质中聚合，其中表面活性剂的浓度低于其临界胶束浓度（CMC）以获得聚氯丁二烯胶乳。根据本发明生产的聚氯丁二烯胶乳在粘合性能等方面非常优异，并且在生产过程中产生较少量的沉积物。

7. 发明授权

US09028265B2 Lever mechanism for connector fitting, and connector 有权
标题翻译：连接器配件的杠杆机构和连接器
公开(公告)号：US09028265B2
公开(公告)日：2015-05-12
申请号：US14124909
申请日：2012-06-14
申请人： Hiroshi Aoki , Osamu Oshita , Naoki Kobayashi , Hiroshi Kobayashi , Masao Nagano , Akihiro Tsuruta , Tetsuya Hayashi
发明人： Hiroshi Aoki , Osamu Oshita , Naoki Kobayashi , Hiroshi Kobayashi , Masao Nagano , Akihiro Tsuruta , Tetsuya Hayashi
IPC分类号： H01R13/629
CPC分类号： H01R13/62977 , H01R13/62933
摘要： A lever mechanism for connector fitting 1 includes a hold part 2 for holding a connector housing 4, and a handle part 3. When the handle part 3 is rotated and the connector housing 4 is thereby inserted into the connector housing 5, an engaging projection 24 is caused to retreat from the inner surface of a side plate 21 toward the connector housing 4, thereby removing the holding of the connector housing 4 by the hold part 2.
摘要翻译：用于连接器配件1的杠杆机构包括用于保持连接器壳体4的保持部分2和手柄部分3.当手柄部分3旋转并且连接器壳体4由此插入到连接器壳体5中时，接合突起24 导致从侧板21的内表面朝向连接器壳体4退回，从而通过保持部分2去除连接器壳体4的保持。

8. 发明授权

US08983370B2 Communication transmission apparatus, communication coupler and impedance adjusting sheet 有权
标题翻译：通信传输装置，通信耦合器和阻抗调节片
公开(公告)号：US08983370B2
公开(公告)日：2015-03-17
申请号：US13393283
申请日：2010-09-01
申请人： Tsuneo Tsukagoshi , Naoki Kobayashi , Hiroshi Fukuda , Koichiro Nakase
发明人： Tsuneo Tsukagoshi , Naoki Kobayashi , Hiroshi Fukuda , Koichiro Nakase
IPC分类号： H04B7/24 , H04B5/00 , H02J17/00
CPC分类号： H04B5/0031 , H02J17/00 , H02J50/20 , H02J50/70 , H04B5/0037
摘要： A technique is proposed for reducing leakage electromagnetic field that reduces the electromagnetic leakage from a connection point between a communication coupler and a signal transmission apparatus and that can conduct both communication and transmission of electric power. The signal transmission apparatus includes: a first sheet conductive body portion constituting a lower portion electrode; and a second sheet conductive body portion in a mesh shape which is laminated on the first sheet conductive body portion while a gap area is sandwiched therebetween and which includes an uneven mesh size area on which a sheet impedance is continuously changed.
摘要翻译：提出了一种降低泄漏电磁场的技术，其减少了从通信耦合器和信号传输装置之间的连接点的电磁泄漏，并且可以进行电力的通信和传输。信号传输装置包括：构成下部电极的第一片状导电体部分; 以及网格形状的第二片状导电体部分，其层压在第一片状导电体部分上，同时间隙区域夹在其间并且包括不均匀的网眼尺寸区域，片状物阻抗连续变化。

9. 发明授权

US08855721B2 Wireless communication device, impedance adjustment method, casing position detection method and information display method 有权
标题翻译：无线通信装置，阻抗调整方法，套管位置检测方法和信息显示方法
公开(公告)号：US08855721B2
公开(公告)日：2014-10-07
申请号：US13577015
申请日：2011-03-25
申请人： Masanori Sakurai , Naoki Kobayashi , Noriaki Ando , Hiroshi Toyao , Masaharu Imazato
发明人： Masanori Sakurai , Naoki Kobayashi , Noriaki Ando , Hiroshi Toyao , Masaharu Imazato
IPC分类号： H04B1/38 , H04M1/02 , H01Q1/24 , H04M1/00 , H01F27/42
CPC分类号： H04M1/0227 , H01Q1/243 , H01Q15/006 , H04M2250/12
摘要： A wireless communication device (100) includes a first casing (10) and a second casing (20), and is switched between at least a first state and a second state by displacement of the first casing (10) and the second casing (20). The first casing (10) includes a first conductor (15) and a conductor element (36a) connected thereto. The second casing (20) includes a second conductor (25), and is connected to the first casing (10) so as to be rotationally displaceable with respect to each other around a perpendicular axis. In a first state, an opposite region (241) in the second conductor (25) and the conductor element (36a) are located at positions opposite to each other, and the conductor element (36a) and the second conductor (25) allow electrical conduction to each other at a predetermined frequency. In a second state, the electrical conduction state is different from that in the first state.
摘要翻译：无线通信装置（100）包括第一壳体（10）和第二壳体（20），并且通过第一壳体（10）和第二壳体（20）的移位而在至少第一状态和第二状态之间切换）。第一壳体（10）包括与其连接的第一导体（15）和导体元件（36a）。第二壳体（20）包括第二导体（25），并且连接到第一壳体（10），以便围绕垂直轴线相对于彼此旋转移位。在第一状态下，第二导体（25）中的相对区域（241）和导体元件（36a）位于彼此相对的位置处，并且导体元件（36a）和第二导体（25）允许电以预定的频率相互导通。在第二状态下，导电状态与第一状态不同。

10. 发明授权

US08797116B2 Surface communication apparatus 有权
标题翻译：表面通信装置
公开(公告)号：US08797116B2
公开(公告)日：2014-08-05
申请号：US13320133
申请日：2010-05-10
申请人： Naoki Kobayashi , Hiroshi Toyao
发明人： Naoki Kobayashi , Hiroshi Toyao
IPC分类号： H01P3/00 , H01P5/00
CPC分类号： H04B5/00 , H01P1/20 , H01Q15/0013 , H01Q15/008
摘要： Provided is a surface communication apparatus that includes: propagation sheet through which electromagnetic waves are propagated; an electromagnetic wave transmission unit disposed on a surface of propagation sheet to transmit the electromagnetic waves to propagation sheet, and an electromagnetic wave reception unit disposed on the surface of propagation sheet to receive the electromagnetic waves propagated through propagation sheet. The electromagnetic wave transmission unit includes an electromagnetic wave generator, and a transmission electromagnetic wave coupler that couples electromagnetic waves generated by the electromagnetic wave generator with propagation sheet. The electromagnetic wave reception unit includes a reception electromagnetic wave coupler that couples the electromagnetic waves propagated through propagation sheet, and an electromagnetic wave output unit that outputs the electromagnetic waves coupled by the reception electromagnetic wave coupler. Propagation sheet has a periodic structure that sets wavelengths of the electromagnetic waves propagated through propagation sheet to be longer than the length of propagation sheet in its extending direction.
摘要翻译：提供一种表面通信装置，其包括：传播电磁波的传播片; 布置在传播片表面上的电磁波传输单元，用于将电磁波传输到传播片;以及电磁波接收单元，设置在传播片的表面上，以接收通过传播片传播的电磁波。电磁波传输单元包括电磁波发生器和将由电磁波发生器产生的电磁波与传播片耦合的传输电磁波耦合器。电磁波接收单元包括将通过传播片传播的电磁波耦合的接收电磁波耦合器和输出由接收电磁波耦合器耦合的电磁波的电磁波输出单元。传播片具有周期性结构，其将通过传播片传播的电磁波的波长设置成比传播片在其延伸方向上的长度更长。

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