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1. 发明授权

US4829022A Method for forming thin films of compound semiconductors by flow rate modulation epitaxy 失效
标题翻译：通过流速调制外延形成化合物半导体薄膜的方法
公开(公告)号：US4829022A
公开(公告)日：1989-05-09
申请号：US88641
申请日：1987-08-05
申请人： Naoki Kobayashi , Hideo Sugiura , Yoshiji Horikoshi
发明人： Naoki Kobayashi , Hideo Sugiura , Yoshiji Horikoshi
IPC分类号： C30B23/02 , H01L21/203 , H01L21/205
CPC分类号： H01L21/02505 , C30B23/02 , C30B29/68 , H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/02631 , Y10S148/065 , Y10S148/072 , Y10S148/11 , Y10S148/16 , Y10S148/169
摘要： A method of forming a III-V semiconductor on the surface of a substrate which is placed in a vacuum chamber and is heated, by supplying one element of Group III and one element of Group V of the periodic table in the form of atoms or molecules to the surface of the substrate. The supply of the element of Group V is decreased to a small quantity insufficient to form a III-V compound semiconductor at least at one period of the growth of the III-V compound, and the element of Group V in the small quantity and the element of Group III are supplied to the surface of the substrate. This method makes it possible to grow III-V compound epitaxial layers which have a high degree of purity and fewer crystal defects and in which surfaces and the interfaces of the heterojunctions are flat on an atomic scale, at a wide temperature range. The present invention can be used for the fabrication of various optical devices and super-high-speed electronic devices.
摘要翻译： PCT No.PCT / JP86 / 00623 Sec。 371日期1987年8月5日 102（e）日期1987年8月5日PCT申请日1986年12月9日PCT公布。公开号WO87 / 03740 日期：1987年6月18日。一种在衬底的表面上形成III-V半导体的方法，该衬底的表面放置在真空室中，并通过提供元素周期表中的III族元素和V族元素以原子或分子的形式存在于基底表面。至少在III-V族化合物生长的至少一个时期，V族元素的供给量减少到不足以形成III-V族化合物半导体的量，而V族的元素少量，将III族元素供给到基板的表面。该方法使得可以在宽的温度范围内生长具有高纯度和更少的晶体缺陷的III-V族化合物外延层，并且其中异质结的表面和界面在原子尺度上是平坦的。本发明可用于各种光学器件和超高速电子器件的制造。

2. 发明授权

US4767494A Preparation process of compound semiconductor 失效
标题翻译：化合物半导体的制备工艺
公开(公告)号：US4767494A
公开(公告)日：1988-08-30
申请号：US909287
申请日：1986-09-19
申请人： Naoki Kobayashi , Toshiki Makimoto , Yoshiji Horikoshi
发明人： Naoki Kobayashi , Toshiki Makimoto , Yoshiji Horikoshi
IPC分类号： C30B25/02 , H01L21/205 , H01L21/365
CPC分类号： C30B25/02 , C30B29/40 , C30B29/48 , C30B29/68 , H01L21/02395 , H01L21/02463 , H01L21/02505 , H01L21/02546 , H01L21/02551 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： A compound semiconductor thin film is formed by growing a plurality of molecular layers one over another. According to the present invention, while a carrier gas and a small quantity of hydride containing an element in Group V or VI are normally flowed, an organometallic compound which is diluted with hydrogen and which contains an element in Group III or II and a hydride which is diluted with hydrogen and which contains an element in Group V or VI are alternately introduced over a substrate so that an atomic layer of an element in Group III or II and an atomic layer of an element in Group V or VI are alternately grown over the substrate. According to this method, grown layers having a high degree of purity can be obtained. A portion such as a Ga-Ga two-layer structure formed in the growth of a surface of an element in Group III or II can easily be eliminated by the introduction of a hydrogen halide so that the surface defects and deep levels are significantly decreased and perfect crystals can be obtained. According to the present invention, a high-concentration doping of a III-V compound semiconductor becomes possible. The method of the present invention is advantageous in the fabrication of high-speed FETs and multi-quantum-well lasers using compound semiconductors.
摘要翻译：化合物半导体薄膜通过使多个分子层彼此生长而形成。根据本发明，载体气体和少量含有第V或VI族元素的氢化物通常流动，用氢稀释并含有III或II族元素的有机金属化合物和氢化物用氢稀释，并且含有V或VI族中的元素交替引入衬底上，使得III或II族元素的原子层和V或VI族元素的原子层交替生长在基质。根据该方法，可以得到高纯度的生长层。通过引入卤化氢可以容易地消除在III或II族元素的表面生长中形成的Ga-Ga两层结构的部分，使得表面缺陷和深度水平显着降低，可以获得完美的晶体。根据本发明，III-V族化合物半导体的高浓度掺杂是可能的。本发明的方法在制造使用复合半导体的高速FET和多量子阱激光器方面是有利的。

3. 发明授权

US4882609A Semiconductor devices with at least one monoatomic layer of doping atoms 失效
标题翻译：具有至少一个单原子层的掺杂原子的半导体器件
公开(公告)号：US4882609A
公开(公告)日：1989-11-21
申请号：US798053
申请日：1985-11-14
申请人： Erdmann Schubert , Klaus Ploog , Albrecht Fischer , Yoshiji Horikoshi
发明人： Erdmann Schubert , Klaus Ploog , Albrecht Fischer , Yoshiji Horikoshi
IPC分类号： H01L29/812 , H01L21/205 , H01L21/331 , H01L21/338 , H01L29/15 , H01L29/36 , H01L29/73 , H01L29/737 , H01L29/772 , H01L29/778 , H01L29/80 , H01L29/861 , H01L29/864 , H01L31/0352 , H01L31/10 , H01L31/101 , H01L33/06 , H01S5/00 , H01S5/30 , H01S5/34
CPC分类号： H01L33/06 , B82Y20/00 , H01L29/155 , H01L29/157 , H01L29/365 , H01L29/73 , H01L29/7725 , H01L29/7787 , H01L29/864 , H01L31/035236 , H01L31/101 , H01S5/305 , H01S5/34 , H01S5/3059 , H01S5/3408
摘要： A semiconductor device consisting of epitaxial material is provided with at least one monoatomic layer of doping atoms, i.e. with a layer which is just one atom thick. A particularly preferred device is a field effect transistor in which case the Dirac-delta doped layer 13 extends between the source and drain zones (18, 19) respectively. The field effect transistor can be constructed either with a homogeneous structure or with a hetero structure or with a superlattice structure. The field effect transistors described herein have a high transconductance and are capable of operating at high current densities.
摘要翻译：由外延材料构成的半导体器件设置有至少一个掺杂原子的单原子层，即仅具有一个原子厚度的层。特别优选的器件是场效应晶体管，在这种情况下，狄拉克-δ掺杂层13分别在源极和漏极区（18,19）之间延伸。场效应晶体管可以由均匀结构或异质结构或超晶格结构构成。本文所述的场效应晶体管具有高跨导能力并能够以高电流密度工作。

4. 发明授权

US4775881A Semiconductor device for detecting electromagnetic radiation or particles 失效
标题翻译：用于检测电磁辐射或颗粒的半导体器件
公开(公告)号：US4775881A
公开(公告)日：1988-10-04
申请号：US14197
申请日：1987-02-13
申请人： Klaus Ploog , Yoshiji Horikoshi
发明人： Klaus Ploog , Yoshiji Horikoshi
IPC分类号： H01L31/10 , H01L31/0352 , H01L31/09 , H01L31/111
CPC分类号： B82Y20/00 , H01L31/035263 , H01L31/111
摘要： A semiconductor device of the doping superlattice type for detecting electromagnetic radiation or particles comprises a semi-insulating substrate (10), a first layer (11) of either n-type or p-type conductivity deposited thereon, a plurality of layers (12, 13, 14) of alternating conductivity types deposited in series on said first layer (11), a strongly p-type electrode region which extends through said p-type and n-type layers (11, 12, 13, 14) and defines a first selective electrode (15), and a strongly n-type electrode region which also extends through said p-type and n-type layers (11, 12, 13, 14), and which is spaced apart from said strongly p-type region and defines a second selective electrode. The device is a homogeneous semiconductor in which the n-type and p-type layers other than the first layer (11) and the outermost layer (14)have substantially identical thicknesses and doping concentrations. The first layer (11) and the outermost layer (14) are of the same conductivity type and have a thickness substantially equal to one half of the thickness of each of the other layers (12, 13). Furthermore, the first layer and the outermost layer have a doping concentration substantially identical to the doping concentration of the other layers. This makes it possible to completely deplete the entire structure thus a high reverse bias can be applied to the device thereby tilting the resultant electric field with respect to the layers. A device of this kind is particularly suited for use as an optical detector in the infrared wavelength region around 1 .mu.m and longer. The device has low dark current at room temperature, a very small capacitance and therefore a fast response time.
摘要翻译：用于检测电磁辐射或粒子的掺杂超晶格型的半导体器件包括半绝缘衬底（10），沉积在其上的n型或p型导电体的第一层（11），多层（12，串联沉积在所述第一层（11）上的交替导电类型的强p型电极区域，延伸穿过所述p型层和n型层（11,12,13,14）并限定一个第一选择电极（15）和还延伸穿过所述p型和n型层（11,12,13,14）的强n型电极区，并且与所述强p型区域并限定第二选择电极。器件是均匀的半导体，其中除了第一层（11）和最外层（14）之外的n型和p型层具有基本相同的厚度和掺杂浓度。第一层（11）和最外层（14）具有相同的导电类型，并且具有基本上等于其它层（12,13）的厚度的一半的厚度。此外，第一层和最外层具有与其它层的掺杂浓度基本相同的掺杂浓度。这使得可以完全耗尽整个结构，从而可以向器件施加高的反向偏压，从而相对于层倾斜所得的电场。这种装置特别适用于大约1米及以上的红外波长区域的光检测器。该器件在室温下具有低暗电流，非常小的电容，因此响应时间快。

5. 发明授权

US4013040A Apparatus for epitaxially growing a laminate semiconductor layer in liquid phase 失效
标题翻译：用于在液相中外延生长层压半导体层的装置
公开(公告)号：US4013040A
公开(公告)日：1977-03-22
申请号：US639713
申请日：1975-12-11
申请人： Yoshiji Horikoshi
发明人： Yoshiji Horikoshi
IPC分类号： C30B19/00 , C30B19/06 , C30B19/10 , H01L21/208 , B05C3/09
CPC分类号： C30B19/10 , C30B19/063
摘要： Apparatus for epitaxially growing a laminate semiconductor layer in liquid phase on the crystalline surface of a substrate by successively bringing different kinds of liquid phase epitaxial growth solution into contact with the surface of a substrate, which is characterized in that different kinds of liquid phase epitaxial growth solutions are injected one after another into solution receptacle, the bottom of which is open to the substrate surface, and each of the preceding one of the epitaxial growth solutions is expelled from the solution receptacle by each succeeding one of the epitaxial growth solutions for interchange between both solutions and thereafter each succeeding solution is epitaxially grown on the preceding one.
摘要翻译：通过连续地使不同种类的液相外延生长溶液与基板的表面接触，在基板的晶体表面上外延生长液相层压半导体层的装置，其特征在于不同种类的液相外延生长溶液一个接一个地注入溶液容器中，溶液容器的底部向基底表面开口，并且每个外延生长溶液中的每一个都由每个后续的一个外延生长溶液从溶液容器中排出，用于在两种溶液和其后每种后续溶液在前一种方法外延生长。

6. 发明授权

US4030949A Method of effecting liquid phase epitaxial growth of group III-V semiconductors 失效
标题翻译：实现III-V族半导体液相外延生长的方法
公开(公告)号：US4030949A
公开(公告)日：1977-06-21
申请号：US590554
申请日：1975-06-26
申请人： Yoshiji Horikoshi , Yoshitaka Furukawa
发明人： Yoshiji Horikoshi , Yoshitaka Furukawa
IPC分类号： C30B19/00 , C30B19/04 , C30B29/40 , H01L21/208 , H01L33/30
CPC分类号： H01L33/0062 , C30B19/04 , C30B29/40 , H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/02625 , Y10S148/084
摘要： Disclosed is a method of yielding a multilayer-liquid phase epitaxial growth of Al.sub.x Ga.sub.1.sub.-x As and GaAs for manufacturing a double heterostructure laser, light emitting diode, etc., which is characterized in that hydrogen gas or inert gas, containing GaCl gas, is used as an atmosphere for the epitaxial growth. This method permits the liquid phase epitaxial growth of a semiconductor layer even on an Al.sub.x Ga.sub.1.sub.-x As (x .gtoreq. 0.3) which is once exposed to the air or subjected to an etching treatment. Accordingly, this method is suitable for the manufacture of a semiconductor element having a buried active layer. This method also permits the manufacture of an epitaxial wafer having a low dislocation density.
摘要翻译：公开了一种制造双异质结构激光器，发光二极管等的Al x Ga 1-x As和GaAs的多层 - 液相外延生长的方法，其特征在于使用含有GaCl气体的氢气或惰性气体作为外延生长的气氛。该方法即使在曾经暴露于空气或经过蚀刻处理的Al x Ga 1-x As（x> / = 0.3）上也能够半导体层的液相外延生长。因此，该方法适用于制造具有掩埋有源层的半导体元件。该方法还允许制造具有低位错密度的外延晶片。

7. 发明授权

US4028148A Method of epitaxially growing a laminate semiconductor layer in liquid phase 失效
标题翻译：在液相中外延生长层压半导体层的方法
公开(公告)号：US4028148A
公开(公告)日：1977-06-07
申请号：US715844
申请日：1976-08-19
申请人： Yoshiji Horikoshi
发明人： Yoshiji Horikoshi
IPC分类号： C30B19/06 , C30B19/10 , H01L21/208
CPC分类号： C30B19/10 , C30B19/063 , H01L21/02546 , H01L21/02625 , H01L21/02628
摘要： A method of epitaxially growing a laminate semiconductor layer in liquid phase on the crystalline surface of a substrate by successively bringing different kinds of liquid phase epitaxial growth solution into contact with the surface of a substrate, which is characterized in that different kinds of liquid phase epitaxial growth solutions are injected one after another into solution receptacle, the bottom of which is open to the substrate surface, and each of the preceding one of the epitaxial growth solutions is expelled from the solution receptacle by each succeeding one of the epitaxial growth solutions for interchange between both solutions and thereafter each succeeding solution is epitaxially grown on the preceding one.
摘要翻译：通过依次使不同种类的液相外延生长溶液与基板的表面接触，将液相中的层叠半导体层外延生长在基板的结晶表面上的方法，其特征在于，不同种类的液相外延生长溶液一个接一个地注入溶液容器中，其底部向基底表面开口，并且每个外延生长溶液中的每一个都由每个后续的一个外延生长溶液从溶液容器排出以进行交换在两个溶液之间，然后每个后续溶液在前一个溶液外延生长。

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