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    • 2. 发明授权
    • Optical semiconductor device
    • 光半导体器件
    • US08604496B2
    • 2013-12-10
    • US13214690
    • 2011-08-22
    • Tomonari ShiodaHisashi YoshidaKoichi TachibanaNaoharu SugiyamaShinya Nunoue
    • Tomonari ShiodaHisashi YoshidaKoichi TachibanaNaoharu SugiyamaShinya Nunoue
    • H01L33/00
    • H01L33/06H01L33/32
    • According to one embodiment, an optical semiconductor device includes an n-type semiconductor layer, a p-type semiconductor layer, and a functional part. The functional part is provided between the n-type semiconductor layer and the p-type semiconductor layers. The functional part includes a plurality of active layers stacked in a direction from the n-type semiconductor layer toward the p-type semiconductor layer. At least two of the active layers include a multilayer stacked body, an n-side barrier layer, a well layer and a p-side barrier layer. The multilayer stacked body includes a plurality of thick film layers and a plurality of thin film layers alternately stacked in the direction. The n-side barrier layer is provided between the multilayer stacked body and the p-type layer. The well layer is provided between the n-side barrier layer and the p-type layer. The p-side barrier layer is provided between the well layer and the p-type layer.
    • 根据一个实施例,光学半导体器件包括n型半导体层,p型半导体层和功能部件。 功能部件设置在n型半导体层和p型半导体层之间。 功能部件包括在从n型半导体层朝向p型半导体层的方向上堆叠的多个有源层。 至少两个有源层包括多层堆叠体,n侧阻挡层,阱层和p侧势垒层。 多层堆叠体包括沿该方向交替堆叠的多个厚膜层和多个薄膜层。 n侧阻挡层设置在多层叠层体和p型层之间。 阱层设置在n侧阻挡层和p型层之间。 p侧阻挡层设置在阱层和p型层之间。
    • 3. 发明申请
    • OPTICAL SEMICONDUCTOR DEVICE
    • 光学半导体器件
    • US20120132940A1
    • 2012-05-31
    • US13214690
    • 2011-08-22
    • Tomonari ShiodaHisashi YoshidaKoichi TachibanaNaoharu SugiyamaShinya Nunoue
    • Tomonari ShiodaHisashi YoshidaKoichi TachibanaNaoharu SugiyamaShinya Nunoue
    • H01L33/32
    • H01L33/06H01L33/32
    • According to one embodiment, an optical semiconductor device includes an n-type semiconductor layer, a p-type semiconductor layer, and a functional part. The functional part is provided between the n-type semiconductor layer and the p-type semiconductor layers. The functional part includes a plurality of active layers stacked in a direction from the n-type semiconductor layer toward the p-type semiconductor layer. At least two of the active layers include a multilayer stacked body, an n-side barrier layer, a well layer and a p-side barrier layer. The multilayer stacked body includes a plurality of thick film layers and a plurality of thin film layers alternately stacked in the direction. The n-side barrier layer is provided between the multilayer stacked body and the p-type layer. The well layer is provided between the n-side barrier layer and the p-type layer. The p-side barrier layer is provided between the well layer and the p-type layer.
    • 根据一个实施例,光学半导体器件包括n型半导体层,p型半导体层和功能部件。 功能部件设置在n型半导体层和p型半导体层之间。 功能部件包括在从n型半导体层朝向p型半导体层的方向上堆叠的多个有源层。 至少两个有源层包括多层堆叠体,n侧阻挡层,阱层和p侧势垒层。 多层堆叠体包括沿该方向交替堆叠的多个厚膜层和多个薄膜层。 n侧阻挡层设置在多层叠层体和p型层之间。 阱层设置在n侧阻挡层和p型层之间。 p侧阻挡层设置在阱层和p型层之间。