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1. 发明授权

US08093083B1 Method for manufacturing a semiconductor light emitting device 有权
标题翻译：半导体发光元件的制造方法
公开(公告)号：US08093083B1
公开(公告)日：2012-01-10
申请号：US13029416
申请日：2011-02-17
申请人： Toshiki Hikosaka , Tomonari Shioda , Yoshiyuki Harada , Naoharu Sugiyama , Koichi Tachibana , Shinya Nunoue
发明人： Toshiki Hikosaka , Tomonari Shioda , Yoshiyuki Harada , Naoharu Sugiyama , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262
摘要： In one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The device includes a crystal layer including a nitride semiconductor. The crystal layer contains In and Ga atoms. The method can include forming the crystal layer by supplying a source gas including a first molecule including Ga atoms and a second molecule including In atoms onto a base body. The crystal layer has a ratio xs of a number of the In atoms to a total of the In atoms and the Ga atoms being not less than 0.2 and not more than 0.4. A vapor phase supply ratio xv of In is a ratio of a second partial pressure to a total of first and second partial pressures. The first and second partial pressures are pressure of the first and second molecules and degradation species of the first and second molecules on the source gas, respectively. (1−1/xv)/(1−1/xs) is less than 0.1.
摘要翻译：在一个实施例中，公开了一种用于制造半导体发光器件的方法。该器件包括包含氮化物半导体的晶体层。晶体层含有In和Ga原子。该方法可以包括通过将包括Ga原子的第一分子和包括In原子的第二分子的源气体供应到基体上来形成晶体层。晶体层的In原子数与In原子的总和的比xs和Ga原子的比率不小于0.2且不大于0.4。 In的气相供给比xv是第二分压与第一和第二分压的总和的比。第一和第二分压分别是源气体上的第一和第二分子的压力和第一和第二分子的降解物质。（1-1 / xv）/（1-1 / xs）小于0.1。

2. 发明授权

US09065003B2 Semiconductor light emitting device and semiconductor wafer 有权
标题翻译：半导体发光器件和半导体晶片
公开(公告)号：US09065003B2
公开(公告)日：2015-06-23
申请号：US13405509
申请日：2012-02-27
申请人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
发明人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L29/06 , H01L33/12 , H01L33/32 , H01L33/02
CPC分类号： H01L33/12 , H01L33/02 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and configured to emit a light having a peak wavelength of 440 nanometers or more. Tensile strain is applied to the first semiconductor layer. An edge dislocation density of the first semiconductor layer is 5×109/cm2 or less. A lattice mismatch factor between the first semiconductor layer and the light emitting layer is 0.11 percent or less.
摘要翻译：根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层，发出峰值波长为440纳米以上的光。对第一半导体层施加拉伸应变。第一半导体层的边缘位错密度为5×10 9 / cm 2以下。第一半导体层和发光层之间的晶格失配因子为0.11％以下。

3. 发明申请

US20130087760A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR WAFER 有权
标题翻译：半导体发光器件和半导体晶体管
公开(公告)号：US20130087760A1
公开(公告)日：2013-04-11
申请号：US13405509
申请日：2012-02-27
申请人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
发明人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/04
CPC分类号： H01L33/12 , H01L33/02 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and configured to emit a light having a peak wavelength of 440 nanometers or more. Tensile strain is applied to the first semiconductor layer. An edge dislocation density of the first semiconductor layer is 5×109/cm2 or less. A lattice mismatch factor between the first semiconductor layer and the light emitting layer is 0.11 percent or less.
摘要翻译：根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层，发出峰值波长为440纳米以上的光。对第一半导体层施加拉伸应变。第一半导体层的边缘位错密度为5×10 9 / cm 2以下。第一半导体层和发光层之间的晶格失配因子为0.11％以下。

4. 发明授权

US08610106B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08610106B2
公开(公告)日：2013-12-17
申请号：US13213821
申请日：2011-08-19
申请人： Tomonari Shioda , Toshiki Hikosaka , Yoshiyuki Harada , Naoharu Sugiyama , Shinya Nunoue
发明人： Tomonari Shioda , Toshiki Hikosaka , Yoshiyuki Harada , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/06
CPC分类号： H01L33/40 , H01L33/06 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting part. The light emitting part is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a first light emitting layer. The first light emitting layer includes a first barrier layer, a first well layer, a first n-side intermediate layer and a first p-side intermediate layer. The barrier layer, the well layer, the n-side layer and the p-side intermediate layer include a nitride semiconductor. An In composition ratio in the n-side layer decreases along a first direction from the n-type layer toward the p-type layer. An In composition ratio in the p-side layer decreases along the first direction. An average change rate of the In ratio in the p-side layer is lower than an average change rate of the In ratio in the n-side layer.
摘要翻译：根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光部分。发光部分设置在n型半导体层和p型半导体层之间，并且包括第一发光层。第一发光层包括第一阻挡层，第一阱层，第一n侧中间层和第一p侧中间层。阻挡层，阱层，n侧层和p侧中间层包括氮化物半导体。 n侧层的An组成比沿着从n型层向p型层的第一方向减小。 P侧层的In组成比沿着第一方向减小。 p侧的In比的平均变化率低于n侧层的In比的平均变化率。

5. 发明授权

US08728237B2 Crystal growth method for nitride semiconductor having a multiquantum well structure 有权
标题翻译：具有多量子阱结构的氮化物半导体的晶体生长方法
公开(公告)号：US08728237B2
公开(公告)日：2014-05-20
申请号：US12874594
申请日：2010-09-02
申请人： Tomonari Shioda , Toshiki Hikosaka , Yoshiyuki Harada , Koichi Tachibana , Shinya Nunoue
发明人： Tomonari Shioda , Toshiki Hikosaka , Yoshiyuki Harada , Koichi Tachibana , Shinya Nunoue
IPC分类号： C30B25/02
CPC分类号： H01L21/02636 , C30B25/02 , C30B29/403 , H01L21/0254 , H01L33/007
摘要： A method for growing nitride semiconductor crystals contains: growing a first semiconductor layer containing InxGa1-xN (0
摘要翻译：一种用于生长氮化物半导体晶体的方法包括：使用含有惰性气体的第一载气，在第一生长温度下，在衬底上生长含有In x Ga 1-x N（0

6. 发明申请

US20120012814A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120012814A1
公开(公告)日：2012-01-19
申请号：US13035304
申请日：2011-02-25
申请人： Yoshiyuki HARADA , Toshiki Hikosaka , Tomonari Shioda , Koichi Tachibana , Hajime Nago , Shinya Nunoue
发明人： Yoshiyuki HARADA , Toshiki Hikosaka , Tomonari Shioda , Koichi Tachibana , Hajime Nago , Shinya Nunoue
IPC分类号： H01L33/06 , H01L33/08
CPC分类号： H01L33/08 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/06
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part provided therebetween. The light emitting part includes a plurality of light emitting layers. Each of the light emitting layers includes a well layer region and a non-well layer region which is juxtaposed with the well layer region in a plane perpendicular to a first direction from the n-type semiconductor layer towards the p-type semiconductor layer. Each of the well layer regions has a common An In composition ratio. Each of the well layer regions includes a portion having a width in a direction perpendicular to the first direction of 50 nanometers or more.
摘要翻译：根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和设置在其间的发光部分。发光部分包括多个发光层。每个发光层包括在垂直于从n型半导体层朝向p型半导体层的第一方向的平面中与阱层区域并置的阱层区域和非阱层区域。每个阱层区域具有常见的An In组成比。每个阱层区域包括在垂直于第一方向的方向上具有50纳米或更大的宽度的部分。

7. 发明授权

US08525197B2 Semiconductor light emitting device and method for manufacturing same 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08525197B2
公开(公告)日：2013-09-03
申请号：US13035304
申请日：2011-02-25
申请人： Yoshiyuki Harada , Toshiki Hikosaka , Tomonari Shioda , Koichi Tachibana , Hajime Nago , Shinya Nunoue
发明人： Yoshiyuki Harada , Toshiki Hikosaka , Tomonari Shioda , Koichi Tachibana , Hajime Nago , Shinya Nunoue
IPC分类号： H01L31/072
CPC分类号： H01L33/08 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/06
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part provided therebetween. The light emitting part includes a plurality of light emitting layers. Each of the light emitting layers includes a well layer region and a non-well layer region which is juxtaposed with the well layer region in a plane perpendicular to a first direction from the n-type semiconductor layer towards the p-type semiconductor layer. Each of the well layer regions has a common An In composition ratio. Each of the well layer regions includes a portion having a width in a direction perpendicular to the first direction of 50 nanometers or more.
摘要翻译：根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和设置在其间的发光部分。发光部分包括多个发光层。每个发光层包括在垂直于从n型半导体层朝向p型半导体层的第一方向的平面中与阱层区域并置的阱层区域和非阱层区域。每个阱层区域具有常见的An In组成比。每个阱层区域包括在垂直于第一方向的方向上具有50纳米或更大的宽度的部分。

8. 发明授权

US08809085B2 Method for manufacturing nitride semiconductor device 有权
标题翻译：氮化物半导体器件的制造方法
公开(公告)号：US08809085B2
公开(公告)日：2014-08-19
申请号：US13222238
申请日：2011-08-31
申请人： Taisuke Sato , Naoharu Sugiyama , Tomonari Shioda , Toshiki Hikosaka , Shinya Nunoue
发明人： Taisuke Sato , Naoharu Sugiyama , Tomonari Shioda , Toshiki Hikosaka , Shinya Nunoue
IPC分类号： H01L33/00 , H01L33/22
CPC分类号： H01L33/0079 , H01L33/22
摘要： According to one embodiment, a method is disclosed for manufacturing a nitride semiconductor device. The method can include removing a growth substrate from a structure body by using a first treatment material. The structure body has the growth substrate, a buffer layer formed on the growth substrate, and the nitride semiconductor layer formed on the buffer layer. A support substrate is bonded to the nitride semiconductor layer. The method can include reducing thicknesses of the buffer layer and the nitride semiconductor layer by using a second treatment material different from the first treatment material after removing the growth substrate.
摘要翻译：根据一个实施例，公开了一种用于制造氮化物半导体器件的方法。该方法可以包括通过使用第一处理材料从结构体移除生长衬底。结构体具有生长衬底，形成在生长衬底上的缓冲层和形成在缓冲层上的氮化物半导体层。支撑基板结合到氮化物半导体层。该方法可以包括在除去生长衬底之后使用与第一处理材料不同的第二处理材料来减小缓冲层和氮化物半导体层的厚度。

9. 发明授权

US08604496B2 Optical semiconductor device 有权
标题翻译：光半导体器件
公开(公告)号：US08604496B2
公开(公告)日：2013-12-10
申请号：US13214690
申请日：2011-08-22
申请人： Tomonari Shioda , Hisashi Yoshida , Koichi Tachibana , Naoharu Sugiyama , Shinya Nunoue
发明人： Tomonari Shioda , Hisashi Yoshida , Koichi Tachibana , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L33/32
摘要： According to one embodiment, an optical semiconductor device includes an n-type semiconductor layer, a p-type semiconductor layer, and a functional part. The functional part is provided between the n-type semiconductor layer and the p-type semiconductor layers. The functional part includes a plurality of active layers stacked in a direction from the n-type semiconductor layer toward the p-type semiconductor layer. At least two of the active layers include a multilayer stacked body, an n-side barrier layer, a well layer and a p-side barrier layer. The multilayer stacked body includes a plurality of thick film layers and a plurality of thin film layers alternately stacked in the direction. The n-side barrier layer is provided between the multilayer stacked body and the p-type layer. The well layer is provided between the n-side barrier layer and the p-type layer. The p-side barrier layer is provided between the well layer and the p-type layer.
摘要翻译：根据一个实施例，光学半导体器件包括n型半导体层，p型半导体层和功能部件。功能部件设置在n型半导体层和p型半导体层之间。功能部件包括在从n型半导体层朝向p型半导体层的方向上堆叠的多个有源层。至少两个有源层包括多层堆叠体，n侧阻挡层，阱层和p侧势垒层。多层堆叠体包括沿该方向交替堆叠的多个厚膜层和多个薄膜层。 n侧阻挡层设置在多层叠层体和p型层之间。阱层设置在n侧阻挡层和p型层之间。 p侧阻挡层设置在阱层和p型层之间。

10. 发明申请

US20120292650A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20120292650A1
公开(公告)日：2012-11-22
申请号：US13220072
申请日：2011-08-29
申请人： Naoharu SUGIYAMA , Tomonari Shioda , Shigeya Kimura , Koichi Tachibana , Shinya Nunoue
发明人： Naoharu SUGIYAMA , Tomonari Shioda , Shigeya Kimura , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L33/24 , H01L33/26 , H01L33/00
CPC分类号： H01L33/007 , H01L33/08 , H01L33/22 , H01L33/42 , H01L2933/0016 , H01L2933/0058
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type layer, a light emitting layer, a p-type layer, and a transparent electrode. The n-type layer includes a nitride semiconductor and has a thickness not more than 500 nm. The light emitting layer is provided on the n-type layer. The p-type layer is provided on the light emitting layer and includes a nitride semiconductor. The transparent electrode contacts the n-type layer. The n-type layer is disposed between the transparent electrode and the light emitting layer.
摘要翻译：根据一个实施例，半导体发光器件包括n型层，发光层，p型层和透明电极。 n型层包括氮化物半导体，其厚度不大于500nm。发光层设置在n型层上。 p型层设置在发光层上，并且包括氮化物半导体。透明电极与n型层接触。 n型层设置在透明电极和发光层之间。

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